arXiv subjects

D. I. Golosov

Publications and source records attributed to D. I. Golosov.

At least 19 recordsLinked to original sources

arXiv2025

Excitonic Insulator and the Extended Falicov--Kimball Model Away from Half-Filling

We consider an extended spinless Falicov--Kimball model at an arbitrary doping level, focusing on the range of parameter values where a uniform excitonic insulator is stabilised at half-filling. We compare the properties of possible uniform phases and construct the Hartree--Fock phase diagrams, which include sizeable phase separation regions. It is seen that the excitonic insulator can appear as a component phase in a mixed-phase state in a broad interval of doping levels. In addition, in a certain range of parameter values the excitonic metal (doped excitonic insulator) is identified as the lowest-energy uniform phase. We suggest that this phase, which is unstable with respect to phase separation, may be stabilised when the phase separation is suppressed by the long-range Coulomb interaction. Overall, we find that excitonic correlations can affect the behaviour of the system relatively far away from half-filling.

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arXiv2020

An On-Site Density Matrix Description of the Extended Falicov--Kimball Model at Finite Temperatures

We propose a single-site mean-field description, an analogue of Weiss mean-field theory, suitable for narrow-band systems with correlation-induced hybridisation at finite temperatures. Presently this approach, based on the notion of a fluctuating on-site density matrix (OSDM), is developed for the case of extended Falicov-Kimball model (EFKM). In an EFKM, an excitonic insulator phase can be stabilised at zero temperature. With increasing temperature, the excitonic order parameter (interaction-induced hybridisation on-site, characterised by the absolute value and phase) eventually becomes disordered, which involves fluctuations of both its phase and (at higher T) its absolute value. In order to build an adequate finite-temperature description, it is important to clarify the nature of degrees of freedom associated with the phase and absolute value of the induced hybridisation, and correctly account for the corresponding phase-space volume. We show that the OSDM-based treatment of the local fluctuations indeed provides an intuitive and concise description (including the phase-space integration measure). This allows to describe both the lower-temperature regime where phase fluctuations destroy the long-range order, and the higher temperature crossover corresponding to a decrease of the absolute value of hybridisation. In spite of the rapid progress in the studies of excitonic insulators, a unified picture of this kind has not been available to date. We briefly discuss recent experiments on ${\rm Ta_2 Ni Se_5 }$ and also address the amplitude mode of collective excitations in relation to the measurements reported for 1T--${\rm TiSe_2}$. Both the overall scenario and the theoretical framework are also expected to be relevant in other contexts, including the Kondo lattice model.

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arXiv2017

A Description of Phases with Induced Hybridisation at Finite Temperatures

In an extended Falicov-Kimball model, an excitonic insulator phase can be stabilised at zero temperature. With increasing temperature, the excitonic order parameter (interaction-induced hybridisation on-site, characterised by the absolute value and phase) eventually becomes disordered, which involves fluctuations of both its phase and (at higher T) its absolute value. In order to build an adequate mean field description, it is important to clarify the nature of degrees of freedom associated with the phase and absolute value of the induced hybridisation, and the corresponding phase space volume. We show that a possible description is provided by the SU(4) parametrisation on-site. In principle, this allows to describe both the lower-temperature regime where phase fluctuations destroy the long-range order, and the higher temperature crossover corresponding to a decrease of absolute value of the hybridisation relative to the fluctuations level. This picture is also expected to be relevant in other contexts, including the Kondo lattice model.

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arXiv2017

Stoner-type theory of Magnetism in Silicon MOSFETs

We consider quasi-two-dimensional gas of electrons in a typical Si-MOSFET, assuming repulsive contact interaction between electrons. Magnetisation and susceptibility are evaluated within the mean-field approach. Finite thickness of the inversion layer results in an interaction-induced electron wave function change, not found in both purely two-dimensional and three-dimensional (bulk) cases. Taking this self-consistent change into account leads to an increased susceptibility and ultimately to a ferromagnetic transition deep in the high-density metallic regime. We further find that in the paramagnetic state, magnetisation increases sublinearly with increasing in-plane magnetic field. In the opposite limit of low carrier densities, the effects of long-range interaction become important and can be included phenomenologically via bandwidth renormalisation. Our treatment then suggests that with decreasing density, the metal-insulator transition is preceded by a ferromagnetic instability. Results are discussed in the context of the available experimental data, and arguments for the validity of our mean-field scheme are presented.

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arXiv2015

Stoner Magnetism in an Inversion Layer

Motivated by recent experimental work on magnetic properties of Si-MOSFETs, we report a calculation of magnetisation and susceptibility of electrons in an inversion layer, taking into account the co-ordinate dependence of electron wave function in the direction perpendicular to the plane. It is assumed that the inversion-layer carriers interact via a contact repulsive potential, which is treated at a mean-field level, resulting in a self-consistent change of profile of the wave functions. We find that the results differ significantly from those obtained in the pure 2DEG case (where no provision is made for a quantum motion in the transverse direction). Specifically, the critical value of interaction needed to attain the ferromagnetic (Stoner) instability is decreased and the Stoner criterion is therefore relaxed. This leads to an increased susceptibility and ultimately to a ferromagnetic transition deep in the high-density metallic regime. In the opposite limit of low carrier densities, a phenomenological treatment of the in-plane correlation effects suggests a ferromagnetic instability above the metal-insulator transition. Results are discussed in the context of the available experimental data.

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arXiv2013

Resistance asymmetry of a two-dimensional electron gas caused by an effective spin injection

We have performed conductivity measurements on a Si-MOSFET sample with a slot in the upper gate, allowing for different electron densities n_1 and n_2 across the slot. Dynamic longitudinal resistance was measured by a standard lock-in technique, while maintaining a large DC current through the source-drain channel. We find that in a parallel magnetic field, the resistance of the sample, R(I_DC), is asymmetric with respect to the direction of the DC current. The asymmetry becomes stronger with an increase of either the magnetic field or the difference between n_1 and n_2. These observations are interpreted in terms of the effective spin injection: the degree of spin polarisation is different in the two parts of the sample, implying different magnitudes of spin current away from the slot. The carriers thus leave the excess spin (of the appropriate sign) in the region around the slot, leading to spin accumulation (or depletion) and to the spin drift-diffusion phenomena. Due to the positive magnetoresistance of the two-dimensional electron gas, this change in a local magnetisation affects the resistivity near the slot and the measured net resistance, giving rise to an asymmetric contribution. We further observe that the value of R(I_DC) saturates at large I_DC; we suggest that this is due to electron tunnelling from the two-dimensional n-type layer into the p-type silicon (or into another "spin reservoir") at the slot.

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arXiv2013

Instability of the chiral phase and electronic ferroelectricity in the extended Falicov--Kimball model

We consider a spinless extended Falicov--Kimball model at half-filling, for the case of opposite-parity bands. Within the Hartree--Fock approach, we calculate the excitation energies in the chiral phase, which is a possible mean-field solution in the presence of a hybridisation. It is shown that the chiral phase is unstable. We then briefly review the accumulated results on stability and degeneracies of the excitonic insulator phase. Based on these, we conclude that the presence of both hybridisation and narrow-band hopping is required for electronic ferroelectricity.

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arXiv2012

Collective Excitations and Stability of the Excitonic Phase in the Extended Falicov--Kimball Model

We consider the excitonic insulator state (often associated with electronic ferroelectricity), which arises on the phase diagram of an extended spinless Falicov--Kimball model (FKM) at half-filling. Within the Hartree--Fock approach, we calculate the spectrum of low-energy collective excitations in this state up to second order in the narrow-band hopping and/or hybridisation. This allows to probe the mean-field stability of the excitonic insulator. The latter is found to be unstable when the case of the pure FKM (no hybridisation with a fully localised band) is approached. The instability is due to the presence of another, lower-lying ground state and not to the degeneracy of the excitonic phase in the pure FKM. The excitonic phase, however, may be stabilised further away from the pure FKM limit. In this case, the low-energy excitation spectrum contains new information about the properties of the excitonic condensate (including the strongly suppressed critical temperature).

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arXiv2012

Influence of spin polarization on resistivity of a two-dimensional electron gas in Si MOSFET at metallic densities

Positive magnetoresistance (PMR) of a silicon MOSFET in parallel magnetic fields B has been measured at high electron densities n >> n_c where n_c is the critical density of the metal-insulator transition (MIT). It turns out that the normalized PMR curves, R(B)/R(0), merge together when the field is scaled according to B/B_c(n) where B_c is the field in which electrons become fully spin polarized. The values of B_c have been calculated from the simple equality between the Zeeman splitting energy and the Fermi energy taking into account the experimentally measured dependence of the spin susceptibility on the electron density. This extends the range of validity of the scaling all the way to a deeply metallic regime far away from MIT. The subsequent analysis of PMR for low n >~ n_c demonstrated that the merging of the initial parts of curves can bee achieved only with taking into account the temperature dependence of B_c. It is also shown that the shape of the PMR curves at strong magnetic fields is affected by a crossover from a purely two-dimensional (2D) electron transport to a regime where out-of-plane carrier motion becomes important (quasi-three-dimensional regime).

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arXiv2010

New Correlated Model of Colossal Magnetoresistive Manganese Oxides

A new minimal model is constructed for the doped manganese oxides which exhibit colossal magnetoresistance (CMR), involving broad spin-majority conduction band as well as nearly localised spin-minority electron states. A simple mean field analysis yields a temperature-dependent hybridised band structure with suppressed carrier weight at the Fermi level. Spin stiffness is complex, indicating unusually strong spin wave damping. Experimental and theoretical investigations are needed to further verify the relevance of the proposed model.

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arXiv2009

Conductance asymmetry of a slot gate Si-MOSFET in a strong parallel magnetic field

We report measurements on a Si-MOSFET sample with a slot in the upper gate, allowing for different electron densities n_{1,2} across the slot. The dynamic longitudinal resistance was measured by the standard lock-in technique, while maintaining a large DC current through the source-drain channel. We find that the conductance of the sample in a strong parallel magnetic field is asymmetric with respect to the DC current direction. This asymmetry increases with magnetic field. The results are interpreted in terms of electron spin accumulation or depletion near the slot.

cond-mat.mes-hall↗

arXiv2009

Inhomogeneous Phases in a Double-Exchange Magnet with Long Range Coulomb Interactions

We consider a model with competing double-exchange (ferromagnetic) and super-exchange (anti-ferromagnetic) interactions in the regime where phase separation takes place. The presence of a long range Coulomb interaction frustrates a macroscopic phase separation, and favors microscopically inhomogeneous configurations. We use the variational Hartree-Fock approach, in conjunction with Monte-Carlo simulations to study the geometry of such configurations in a two-dimensional system. We find that an array of diamond shaped ferromagnetic droplets is the preferred configuration at low electronic densities, while alternating ferromagnetic and anti-ferromagnetic diagonal stripes emerge at higher densities. These findings are expected to be relevant for thin films of colossal magneto-resistive manganates.

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arXiv2008

Two-Fluid Behaviour at the Origin of the Resistivity Peak in Doped Manganites

We report a series of magnetic and transport measurements on high-quality single crystal samples of colossal magnetoresistive manganites, La_{0.7} Ca_{0.3} Mn O_3 and Pr_{0.7} Sr_{0.3} Mn O_3. 1 % Fe doping allows a Moessbauer spectroscopy study, which shows (i) unusual line broadening within the ferromagnetic phase and (ii) a coexistence of ferro- and paramagnetic contributions in a region, T_1 T_2. This shows that phase separation into metallic (ferromagnetic) and insulating (paramagnetic) phases cannot be generally responsible for the resistivity peak (and hence for the associated colossal magnetoresistance). Our results can be understood phenomenologically within the two-fluid approach, which also allows for a difference between T_C and T_{MI}. Our data indeed imply that while magnetic and transport properties of the manganites are closely interrelated, the two transitions at T_C and T_{MI} can be viewed as distinct phenomena.

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arXiv2007

Transmission phase lapses in quantum dots: the role of dot-lead coupling asymmetry

Lapses of transmission phase in transport through quantum dots are ubiquitous already in the absence of interaction, in which case their precise location is determined by the signs and magnitudes of the tunnelling matrix elements. However, actual measurements for a quantum dot embedded in an Aharonov-Bohm interferometer show systematic sequences of phase lapses separated by Coulomb peaks -- an issue that attracted much attention and generated controversy. Using a two-level quantum dot as an example we show that this phenomenon can be accounted for by the combined effect of asymmetric dot-lead couplings (left lead/right lead asymmetry as well as different level broadening for different levels) and interaction-induced "population switching" of the levels, rendering this behaviour generic. We construct and analyse a mean field scheme for an interacting quantum dot, and investigate the properties of the mean field solution, paying special attention to the character of its dependence (continuous vs. discontinuous) on the chemical potential or gate voltage.

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arXiv2006

Transmission through Quantum Dots: Focus on Phase Lapses

Measurements of the transmission phase in transport through a quantum dot embedded in an Aharonov-Bohm interferometer show systematic sequences of phase lapses separated by Coulomb peaks. Using a two-level quantum dot as an example we show that this phenomenon can be accounted for by the combined effect of asymmetric dot-lead coupling and interaction-induced "population switching" of the levels, rendering this behavior generic. In addition, we use the notion of spectral shift function to analyze the relationship between transmission phase lapses and the Friedel sum rule.

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arXiv2006

Boundary Energies and the Geometry of Phase Separation in Double--Exchange Magnets

We calculate the energy of a boundary between ferro- and antiferromagnetic regions in a phase separated double-exchange magnet in two and three dimensions. The orientation dependence of this energy can significantly affect the geometry of the phase-separated state in two dimensions, changing the droplet shape and possibly stabilizing a striped arrangement within a certain range of the model parameters. A similar effect, albeit weaker, is also present in three dimensions. As a result, a phase-separated system near the percolation threshold is expected to possess intrinsic hysteretic transport properties, relevant in the context of recent experimental findings.

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arXiv2005

Effects of the On-Site Coulomb Repulsion in Double Exchange Magnets

We investigate the zero-temperature phase diagram and spin-wave properties of a double exchange magnet with on-site Hubbard repulsion. It is shown that even within a simple Hartree -- Fock approach this interaction (which is often omitted in theoretical treatments) leads to qualitatively important effects which are highly relevant in the context of experimental data for the colossal magnetoresistance compounds. These include the asymmetry of the doping dependence of spin stiffness, and the zone-boundary ``softening'' of spin wave dispersion. Effects of Hubbard repulsion on phase separation are analyzed as well. We also show that in the ferromagnetic phase, an unusual temperature-dependent effective electron-electron interaction arises at finite T. The mean-field scheme, however, does not yield the experimentally observed density of states depletion near the Fermi level. We speculate that proper treatment of electron-electron interactions may be necessary for understanding both this important feature and more generally the physics of colossal magnetoresistance phenomenon.

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arXiv2003

Magnetic Domain Walls in Single-Phase and Phase-Separated Double Exchange Systems

We investigate the structure of magnetic domain walls in a classical double exchange ferromagnet, evaluating domain wall energies and charges. Three different cases are studied: (i) a conventional smooth Bloch wall, (ii) an abrupt Ising-type wall, which is shown to have lower energy at small values of carrier concentration, and (iii) stripe wall, corresponding to the two ferromagnetic domains being separated by a stripe of another, antiferromagnetic, phase. General aspects of energy balance and geometry of phase-separated states are discussed in this context. It is speculated that domain walls of the latter type may be responsible for the unusual transport properties of certain manganate films.

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