arXiv subjects

D. J. Kim

Publications and source records attributed to D. J. Kim.

22 records · Page 2Linked to original sources

arXiv2007

Observation of room-temperature ferroelectricity in tetragonal strontium titanate thin films on SrTiO3 (001) substrates

We investigated the ferroelectric properties of strontium titanate (STO) thin films deposited on SrTiO3 (001) substrate with SrRuO3 electrodes. The STO layer was grown coherently on the SrTiO3 substrate without in-plane lattice relaxation, but its out-of-plane lattice constant increased with a decrease in the oxygen pressure during deposition. Using piezoresponse force microscopy and P-V measurements, we showed that our tetragonal STO films possess room-temperature ferroelectricity. We discuss the possible origins of the observed ferroelectricity.

cond-mat.mtrl-sci↗

arXiv2006

Polarization Switching Dynamics Governed by Thermodynamic Nucleation Process in Ultrathin Ferroelectric Films

A long standing problem of domain switching process - how domains nucleate - is examined in ultrathin ferroelectric films. We demonstrate that the large depolarization fields in ultrathin films could significantly lower the nucleation energy barrier (U*) to a level comparable to thermal energy (kBT), resulting in power-law like polarization decay behaviors. The "Landauer's paradox": U* is thermally insurmountable is not a critical issue in the polarization switching of ultrathin ferroelectric films. We empirically find a universal relation between the polarization decay behavior and U*/kBT.

cond-mat.mtrl-sci↗

arXiv2005

Polarization Relaxation Induced by Depolarization Field in Ultrathin Ferroelectric BaTiO$_3$ Capacitors

Time-dependent polarization relaxation behaviors induced by a depolarization field $E_{d}$ were investigated on high-quality ultrathin SrRuO$_{3}$/BaTiO$_{3}$/SrRuO$_{3}$ capacitors. The $E_d$ values were determined experimentally from an applied external field to stop the net polarization relaxation. These values agree with those from the electrostatic calculations, demonstrating that a large $E_{d}$ inside the ultrathin ferroelectric layer could cause severe polarization relaxation. For numerous ferroelectric devices of capacitor configuration, this effect will set a stricter size limit than the critical thickness issue.

cond-mat.mtrl-sci↗

arXiv2005

Ferroelectric properties of SrRuO3/BaTiO3/SrRuO3 ultrathin film capacitors free from passive lay

Structural studies on ultrathin SrRuO3/BaTiO3/SrRuO3 capacitors, with BaTiO3 thicknesses of between 5 nm and 30 nm, show well-defined interfaces between ferroelectric BaTiO3 and electrode SrRuO3 layers. In these capacitors, we cannot observe any extrinsic electrical effects due to either the formation of an insulating interfacial passive layer or passive-layer-induced charge injection. Such high quality interfaces result in very good fatigue endurance, even for the 5 nm thick BaTiO3 capacitor.

cond-mat.mtrl-sci↗