arXiv subjects

D. K. Maude

Publications and source records attributed to D. K. Maude.

At least 73 records · Page 4Linked to original sources

arXiv2007

Novel metallic and insulating states at a bent quantum Hall junction

A non-planar geometry for the quantum Hall (QH) effect is studied, whereby two quantum Hall (QH) systems are joined at a sharp right angle. When both facets are at equal filling factor nu the junction hosts a channel with non-quantized conductance, dependent on nu. The state is metallic at nu = 1/3, with conductance along the junction increasing as the temperature T drops. At nu = 1, 2 it is strongly insulating, and at nu = 3, 4 shows only weak T dependence. Upon applying a dc voltage bias along the junction, the differential conductance again shows three different behaviors. Hartree calculations of the dispersion at the junction illustrate possible explanations, and differences from planar QH structures are highlighted.

cond-mat.mes-hall↗

arXiv2006

Magnetophonon resonance in high density, high mobility quantum well systems

We have investigated the magnetophonon resonance (MPR) effect in a series of single GaAs quantum well samples which are symmetrically modulation doped in the adjacent short period AlAs/GaAs superlattices. Two distinct MPR series are observed originating from the $Γ$ and X electrons interacting with the GaAs and AlAs longitudinal optic (LO) phonons respectively. This confirms unequivocally the presence of X electrons in the AlAs quantum well of the superlattice previously invoked to explain the high electron mobility in these structures (Friedland et al. Phys. Rev. Lett. 77,4616 (1996).

cond-mat.mes-hall↗

arXiv2006

Scaling flow diagram in the fractional quantum Hall regime of GaAs/AlGaAs heterostructures

The temperature driven flow lines of the Hall and dissipative magnetoconductance data (σ_{xy},σ_{xx}) are studied in the fractional quantum Hall regime for a 2D electron system in GaAs/Al_{x}Ga_{1-x}As heterostructures. The flow lines are rather well described by a recent unified scaling theory developed for both the integer and the fractional quantum Hall effect in a totally spin-polarized 2D electron system which predicts that one (σ_{xy},σ_{xx}) point determines a complete flow line.

cond-mat.mes-hall↗

arXiv2005

The quantum Hall ferromagnet at high filling factors: A magnetic field induced Stoner transition

Spin splitting in the integer quantum Hall effect is investigated for a series of Al$_{x}$Ga$_{1-x}$As/GaAs heterojunctions and quantum wells. Magnetoresistance measurements are performed at mK temperature to characterize the electronic density of states and estimate the strength of many body interactions. A simple model with no free parameters correctly predicts the magnetic field required to observe spin splitting confirming that the appearance of spin splitting is a result of a competition between the disorder induced energy cost of flipping spins and the exchange energy gain associated with the polarized state. In this model, the single particle Zeeman energy plays no role, so that the appearance of this quantum Hall ferromagnet in the highest occupied Landau level can also be thought of as a magnetic field induced Stoner transition.

cond-mat.mes-hall↗

arXiv2005

Vortex-like excitations in a non-superconducting single-layer compound Bi$_{2+x}$Sr$_{2-x}$CuO$_{6+δ}$ single crystal in high magnetic fields

The in-plane $ρ_{ab}(H,T)$ and the out-of-plane $ρ_c(H,T)$ magneto-transport in magnetic fields up to 28 T has been investigated in high quality non-superconducting (down to 20 mK) La-free Bi$_{2+x}$Sr$_{2-x}$CuO$_{6+δ}$ single crystal. By measuring the angular dependence of the in-plane and out-of-plane magnetoresistivities at temperatures from 1 K down to 30 mK, we present evidence for the presence of vortex-like excitations in a non-superconducting cuprate in the insulating state. Such excitations have previously been observed by the detection of a Nernst signal in superconducting cuprates at $T>T_c$ in magnetic fields.

cond-mat.supr-con↗

arXiv2005

Quasiparticle density of states in Bi$_2$Sr$_2$CaCu$_2$O$_{8+δ}$ single crystals probed using tunneling spectroscopy at ultra-low temperatures in high magnetic fields

Break-junction tunneling spectroscopy at temperatures 30-50 mK in high magnetic field is used to directly probe the quasiparticle density of states within the energy gap in a single crystal Bi2212 high-$T_c$ superconductor. The measured tunneling conductances $dI/dV(V)$ in the subgap region have a zero flat region with no evidence for a linear increase of the density of states with voltage. A number of tunnel break-junctions exhibited $dI/dV(V)$ curves with a second energy gap structure at the average magnitude 2$Δ_{p-p}/e=13$ mV. Our data cannot be explained by either a pure $s$ pairing or a pure $d_{x^2-y^2}$ pairing.

cond-mat.supr-con↗

arXiv2005

The microwave induced resistance response of a high mobility 2DEG from the quasi-classical limit to the quantum Hall regime

Microwave induced resistance oscillations (MIROs) were studied experimentally over a very wide range of frequencies ranging from ~20 GHz up to ~4 THz, and from the quasi-classical regime to the quantum Hall effect regime. At low frequencies regular MIROs were observed, with a periodicity determined by the ratio of the microwave to cyclotron frequencies. For frequencies below 150 GHz the magnetic field dependence of MIROs waveform is well described by a simplified version of an existing theoretical model, where the damping is controlled by the width of the Landau levels. In the THz frequency range MIROs vanish and only pronounced resistance changes are observed at the cyclotron resonance. The evolution of MIROs with frequency are presented and discussed.

cond-mat.mes-hall↗

arXiv2005

Total Angular Momentum Conservation During Tunnelling through Semiconductor Barriers

We have investigated the electrical transport through strained p-Si/Si_{1-x}Ge_x double-barrier resonant tunnelling diodes. The confinement shift for diodes with different well width, the shift due to a central potential spike in a well, and magnetotunnelling spectroscopy demonstrate that the first two resonances are due to tunnelling through heavy hole levels, whereas there is no sign of tunnelling through the first light hole state. This demonstrates for the first time the conservation of the total angular momentum in valence band resonant tunnelling. It is also shown that conduction through light hole states is possible in many structures due to tunnelling of carriers from bulk emitter states.

cond-mat.mes-hall↗

arXiv2005

Excited two-dimensional magnetopolaron states in quantum well of resonant tunnel junction

Tunnel spectroscopy is used to probe the electronic structure in GaAs quantum well of resonant tunnel junction over wide range of energies and magnetic fields normal to layers. Spin degenerated high Landau levels ($N=2\div7$) are found to be drastically renormalised near energies when the longitudinal optical-phonon ($\hbarω_{LO}$) and cyclotron energy ($\hbarω_{C}$) are satisfied condition $\hbarω_{LO}=m\hbarω_{C}$, where $m=1,2,3$. This renormalisation is attributed to formation of resonant magnetopolarons, i.e. mixing of high index Landau levels by strong interaction of electrons at Landau level states with LO-phonons.

cond-mat.mes-hall↗

arXiv2004

Metal-to-insulator crossover and pseudogap in single-layer compound Bi$_{2+x}$Sr$_{2-x}$Cu$_{1+y}$O$_{6+δ}$ single crystals in high magnetic fields

The in-plane $ρ_{ab}(H)$ and the out-of-plane $ρ_c(H)$ magneto-transport in magnetic fields up to 28 T has been investigated in a series of high quality, single crystal, hole-doped La-free Bi2201 cuprates for a wide doping range and over a wide range of temperatures down to 40 mK. With decreasing hole concentration going from the overdoped (p=0.2) to the underdoped (p=0.12) regimes, a crossover from a metallic to and insulating behavior of $ρ_{ab}(T)$ is observed in the low temperature normal state, resulting in a disorder induced metal insulator transition. In the zero temperature limit, the normal state ratio $ρ_c(H)/ρ_{ab}(H)$ of the heavily underdoped samples in pure Bi2201 shows an anisotropic 3D behavior, in striking contrast with that observed in La-doped Bi2201 and LSCO systems. Our data strongly support that that the negative out-of-plane magnetoresistance is largely governed by interlayer conduction of quasiparticles in the superconducting state, accompanied by a small contribution of normal state transport associated with the field dependent pseudogap. Both in the optimal and overdoped regimes, the semiconducting behavior of $ρ_c(H)$ persists even for magnetic fields above the pseudogap closing field $H_{pg}$. The method suggested by Shibauchi \textit{et al.} (Phys. Rev. Lett. \textbf{86}, 5763, (2001)) for evaluating $H_{pg}$ is unsuccessful for both under- and overdoped Bi2201 samples. Our findings suggest that the normal state pseudogap is not always a precursor of superconductivity.

cond-mat.supr-con↗

arXiv2004

Spin-orbit coupling and anisotropy of spin splitting in quantum dots

In lateral quantum dots, the combined effect of both Dresselhaus and Bychkov-Rashba spin orbit coupling is equivalent to an effective magnetic field B_so which has the opposite sign for s_z=1/2 spin electrons. When the external magnetic field is perpendicular to the planar structure, the field B_so generates an additional splitting for electron states as compared to the spin splitting in the in-plane field orientation. The anisotropy of spin splitting has been measured and then analyzed in terms of spin-orbit coupling in several AlGaAs/GaAs quantum dots by means of resonanat tunneling spectroscopy. From the measured values and sign of the anisotropy we are able to determine the dominating spin-orbit coupling mechanism.

cond-mat.mes-hall↗

arXiv2004

Magneto-transport in high g-factor, low-density two-dimensional electron systems confined in In_0.75Ga_0.25As/In_0.75Al_0.25As quantum wells

We report magneto-transport measurements on high-mobility two-dimensional electron systems (2DESs) confined in In_0.75Ga_0.25As/In_0.75Al_0.25As single quantum wells. Several quantum Hall states are observed in a wide range of temperatures and electron densities, the latter controlled by a gate voltage down to values of 1.10^11 cm^-2. A tilted-field configuration is used to induce Landau level crossings and magnetic transitions between quantum Hall states with different spin polarizations. A large filling factor dependent effective electronic g-factor is determined by the coincidence method and cyclotron resonance measurements. From these measurements the change in exchange-correlation energy at the magnetic transition is deduced. These results demonstrate the impact of many-body effects in tilted-field magneto-transport of high-mobility 2DESs confined in In_0.75Ga_0.25As/In_0.75Al_0.25As quantum wells. The large tunability of electron density and effective g-factor, in addition, make this material system a promising candidate for the observation of a large variety of spin-related phenomena.

cond-mat.mes-hall↗

arXiv2003

Longitudinal conductivity in Si/SiGe heterostructure at integer filling factors

We have investigated temperature dependence of the longitudinal conductivity $σ_{xx}$ at integer filling factors $ν=i$ for Si/SiGe heterostructure in the quantum Hall effect regime. It is shown that for odd $i$, when the Fermi level $E_{F}$ is situated between the valley-split levels, $Δσ_{xx}$ is determined by quantum corrections to conductivity caused by the electron-electron interaction: $Δσ_{xx}(T)\sim \ln T$. For even $i$, when $E_{F}$ is located between cyclotron-split levels or spin-split levels, $σ_{xx}\sim \exp[-Δ_{i}/T]$ for $i=6,10,12$ and $\sim \exp [-(T_{0i}/T)]^{1/2}$ for $i=4,8$. For further decrease of $T$, all dependences $σ_{xx}(T)$ tend to almost temperature-independent residual conductivity $σ_{i}(0)$. A possible mechanism for $σ_{i}(0)$ is discussed.

cond-mat.mes-hall↗

arXiv2003

Collective character of spin excitations in a system of Mn$^{2+}$ spins coupled to a two-dimensional electron gas

We have studied the low energy spin excitations in n-type CdMnTe based dilute magnetic semiconductor quantum wells. For magnetic fields for which the energies for the excitation of free carriers and Mn spins are almost identical an anomalously large Knight shift is observed. Our findings suggests the existence of a magnetic field induced ferromagnetic order in these structures, which is in agreement with recent theoretical predictions [J. K{ö}nig and A. H. MacDonald, submitted Phys. Rev. Lett. (2002)]

cond-mat↗

arXiv2001

Ferromagnetic GaMnAs/GaAs superlattices - MBE growth and magnetic properties

We have studied the magnetic properties of (GaMnAs)m/(GaAs)n superlattices with magnetic GaMnAs layers of thickness between 8 and 16 molecular layers (ML) (23-45 Å), and with nonmagnetic GaAs spacers from 4 ML to 10 ML (11-28 Å). While previous reports state that GaMnAs layers thinner than 50 Åare paramagnetic in the whole Mn composition range achievable using MBE growth (up to 8% Mn), we have found that short period superlattices exhibit a paramagnetic-to-ferromagnetic phase transition with a transition temperature which depends on both the thickness of the magnetic GaMnAs layer and the nonmagnetic GaAs spacer. The neutron scattering experiments have shown that the magnetic layers in superlattices are ferromagnetically coupled for both thin (below 50 Å) and thick (above 50 Å) GaMnAs layers.

cond-mat.mtrl-sci↗

arXiv2000

Magneto infra-red absorption in high electronic density GaAs quantum wells

Magneto infra-red absorption measurements have been performed in a highly doped GaAs quantum well which has been lifted off and bonded to a silicon substrate, in order to study the resonant polaron interaction. It is found that the pinning of the cyclotron energy occurs at an energy close to that of the transverse optical phonon of GaAs. This unexpected result is explained by a model taking into account the full dielectric constant of the quantum well.

cond-mat↗

arXiv2000

Metal-Insulator oscillations in a Two-dimensional Electron-Hole system

The electrical transport properties of a bipolar InAs/GaSb system have been studied in magnetic field. The resistivity oscillates between insulating and metallic behaviour while the quantum Hall effect shows a digital character oscillating from 0 to 1 conducatance quantum e^2/h. The insulating behaviour is attributed to the formation of a total energy gap in the system. A novel looped edge state picture is proposed associated with the appearance of a voltage between Hall probes which is symmetric on magnetic field reversal.

cond-mat.mes-hall↗

arXiv1998

Searches for Skyrmions in the Limit of Zero g-Factor

Energy gaps have been measured for the ferromagnetic quantum Hall effect states at v=1 and 3 in GaAs/GaAlAs heterojunctions as a function of Zeeman energy, which is reduced to zero by applying hydrostatic pressures of up to 20kbar. At large Zeeman energy the gaps are consistent with spin wave excitations. For a low density sample the gap at v=1 decreases with increasing pressure and reaches a minimum when the g-factor vanishes. At small Zeeman energy the excitation appears to consist of a large number of reversed spins and may be interpreted as a Skyrmion. The data also suggest Skyrmionic excitations take place at v=3. The width of the minimum at v=1 is found to decrease as the g-factor is reduced in a similar way for all samples.

cond-mat.mes-hall↗