arXiv subjects

D. Kamburov

Publications and source records attributed to D. Kamburov.

26 records · Page 2Linked to original sources

arXiv2013

Composite Fermions with Tunable Fermi Contour Anisotropy

The composite fermion formalism elegantly describes some of the most fascinating behaviours of interacting two-dimensional carriers at low temperatures and in strong perpendicular magnetic fields. In this framework, carriers minimize their energy by attaching two flux quanta and forming new quasi-particles, the so-called composite fermions. Thanks to the flux attachment, when a Landau level is half-filled, the composite fermions feel a vanishing effective magnetic field and possess a Fermi surface with a well-defined Fermi contour. Our measurements in a high-quality two-dimensional hole system confined to a GaAs quantum well demonstrate that a parallel magnetic field can significantly distort the hole-flux composite fermion Fermi contour.

cond-mat.mes-hall↗

arXiv2012

Anisotropic Fermi Contour of (001) GaAs Holes in Parallel Magnetic Fields

We report a severe, spin-dependent, Fermi contour anisotropy induced by parallel magnetic field in a high-mobility (001) GaAs two-dimensional hole system. Employing commensurability oscillations created by a unidirectional, surface-strain-induced, periodic potential modulation, we directly probe the anisotropy of the two spin subband Fermi contours. Their areas are obtained from the Fourier transform of the Shubnikov-de Haas oscillations. Our findings are in semi-quantitative agreement with the results of parameter-free calculations of the energy bands.

cond-mat.mes-hall↗

arXiv2012

Ballistic transport of (001) GaAs 2D holes through a strain-induced lateral superlattice

We report the observation of ballistic commensurability oscillations and positive magnetoresistance in a high-mobility, (001) GaAs two-dimensional hole system with a unidirectional, surface-strain-induced, periodic potential modulation. The positions of the resistivity minima agree well with the electrostatic commensurability condition. From an analysis of the amplitude of the oscillations we deduce a ballistic scattering time and an effective magnitude for the induced periodic potential seen by the two-dimensional holes.

cond-mat.mes-hall↗

arXiv2012

Hole-flux Composite Fermion Commensurability Oscillations

We report the observation of commensurability oscillations of hole-flux composite fermions near filling factor $ν=1/2$ in a high-mobility two-dimensional hole system confined to a GaAs quantum well, and subjected to a weak, strain-induced, unidirectional periodic potential modulation. The oscillations, which are consistent with ballistic transport of fully spin-polarized composite fermions in a weak periodic effective magnetic field, are surprisingly strong and exhibit up to third-order minima. We extract a ballistic mean-free-path of about 0.2 $μ$m for the hole-flux composite fermions.

cond-mat.mes-hall↗

arXiv2012

Spin and charge distribution symmetry dependence of stripe phases in two-dimensional electron systems confined to wide quantum wells

Measurements in clean two-dimensional electron systems confined to wide GaAs quantum wells in which two electric subbands are occupied reveal an unexpected rotation of the orientation of the stripe phase observed at a half-filled Landau level. Remarkably, the reorientation is sensitive to the spin of the half-filled Landau level and the symmetry of the charge distribution in the quantum well.

cond-mat.mes-hall↗

arXiv2011

Reentrant nu = 1 quantum Hall state in a two-dimensional hole system

We report the observation of a reentrant quantum Hall state at the Landau level filling factor nu = 1 in a two-dimensional hole system confined to a 35-nm-wide (001) GaAs quantum well. The reentrant behavior is characterized by a weakening and eventual collapse of the nu = 1 quantum Hall state in the presence of a parallel magnetic field component B||, followed by a strengthening and reemergence as B|| is further increased. The robustness of the nu = 1 quantum Hall state during the transition depends strongly on the charge distribution symmetry of the quantum well, while the magnitude of B|| needed to invoke the transition increases with the total density of the system.

cond-mat.mes-hall↗

arXiv2011

Anomalous robustness of the 5/2 fractional quantum Hall state near a sharp phase boundary

We report magneto-transport measurements in wide GaAs quantum wells with tunable density to probe the stability of the fractional quantum Hall effect at filling factor $ν= $ 5/2 in the vicinity of the crossing between Landau levels (LLs) belonging to the different (symmetric and antisymmetric) electric subbands. When the Fermi energy ($E_F$) lies in the excited-state LL of the symmetric subband, the 5/2 quantum Hall state is surprisingly stable and gets even stronger near this crossing, and then suddenly disappears and turns into a metallic state once $E_F$ moves to the ground-state LL of the antisymmetric subband. The sharpness of this disappearance suggests a first-order transition.

cond-mat.mes-hall↗

arXiv2011

Evolution of the 7/2 fractional quantum Hall state in two-subband systems

We report the evolution of the fractional quantum Hall state (FQHS) at even-denominator filling factor $ν=7/2$ in wide GaAs quantum wells in which electrons occupy two electric subbands. The data reveal subtle and distinct evolutions as a function of density, magnetic field tilt-angle, or symmetry of the charge distribution. When the charge distribution is strongly asymmetric, there is a remarkable persistence of a resistance minimum near $ν=7/2$ when two Landau levels belonging to the two subbands cross at the Fermi energy. The field position of this minimum tracks the 5/2 filling of the symmetric subband, suggesting a pinning of the crossing levels and a developing 5/2 FQHS in the symmetric subband even when the antisymmetric level is partially filled.

cond-mat.mes-hall↗