arXiv · 1208.0649
Ballistic transport of (001) GaAs 2D holes through a strain-induced lateral superlattice
Abstract
We report the observation of ballistic commensurability oscillations and positive magnetoresistance in a high-mobility, (001) GaAs two-dimensional hole system with a unidirectional, surface-strain-induced, periodic potential modulation. The positions of the resistivity minima agree well with the electrostatic commensurability condition. From an analysis of the amplitude of the oscillations we deduce a ballistic scattering time and an effective magnitude for the induced periodic potential seen by the two-dimensional holes.
Explore related subjects
Keep this discovery
D. Kamburov, H. Shapourian, M. Shayegan, L. N. Pfeiffer, K. W. West, K. W. Baldwin, R. Winkler. 2012-08-03. Ballistic transport of (001) GaAs 2D holes through a strain-induced lateral superlattice. https://doi.org/10.1103/physrevb.85.121305
Cite the original work for its findings. Save a collection to share your selection of sources.