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D. Kotekar-Patil

Publications and source records attributed to D. Kotekar-Patil.

8 recordsLinked to original sources

Advances and opportunities for automated robotic preparation of 2D materials and fabrication of 2D heterostructures

The mechanical exfoliation, transfer, and stacking of 2D atomic sheets from van der Waals crystals synergize to enable atomic layer-by-atomic layer engineering of 2D heterostructures with tailored properties that yield new exotic phenomena and states of matter. With the huge variety of van der Waals materials available, there is a limitless number of ways to couple 2D semiconducting, insulating, magnetic, metallic, topological, etc. systems with one another. Experimental exploration of this vast space starts with the fabrication of high-quality 2D heterostructures, which is commonly performed manually, relying on humans to execute delicate operations. Many scientific advancements have been achieved in this manner, revealing immense potential for further discovery and innovation of increasingly sophisticated 2D heterostructures. However, soon, the complexity of the 2D heterostructures that define the scientific state-of-the-art will exceed the capabilities of manual fabrication. Therefore, the demand for robotic instruments for preparing 2D materials and fabricating complex 2D heterostructures with greater quality, at higher rates, and with better reproducibility is increasing. This review covers recent scientific, instrumentation, and processing advances rising to this challenge. Robotic instruments for mechanical exfoliation, optical metrology of 2D crystallites, stacking, as well as advancements in supporting technologies such as organic-free stamps, vacuum-compatible processing tools, and artificial intelligence (AI) are covered. Looking forward, a new generation of AI-driven, automated advanced manufacturing tools is anticipated to emerge from these current advancements. These new tools will bridge the current state-of-the-art of 2D heterostructure science to new scientific frontiers defined by precision fabrication of high-quality, complex, many-layer 2D heterostructure systems.

cond-mat.mtrl-sci

Excited state spectroscopy and spin splitting in atomically thin quantum dots

Semiconducting transition metal dichalcogenides (TMDCs) are very promising materials for quantum dots and spin-qubit implementation. Reliable operation of spin qubits requires the knowledge of Landé g-factor, which can be measured by exploiting the discrete energy spectrum on a quantum dot. However, the quantum dots realized in TMDCs has yet to reach the required quality for reliable measurement of g-factor. Quantum dot sizes reported in TMDCs so far are not small enough to observe discrete energy levels on them. Here, we report on electron transport through discrete energy levels of quantum dot in a single layer MoS2. The quantum dot energy levels are separated by few (5-6) meV such that the ground state and the excited state transitions are clearly visible. This well resolved energy separation allows us to accurately measure the ground state g-factor of ~5 in MoS2 quantum dots. We observe a spin filling sequence in our quantum dot under perpendicular magnetic field. Such a system offers an excellent testbed to measure the key parameters for evaluation and implementation of spin-valley qubits in TMDCs, thus accelerating the development of quantum systems in two dimensional semiconducting TMDCs.

cond-mat.mes-hall

Si CMOS Platform for Quantum Information Processing

We report the first quantum bit device implemented on a foundry-compatible Si CMOS platform. The device, fabricated using SOI NanoWire MOSFET technology, is in essence a compact two-gate pFET. The qubit is encoded in the spin degree of freedom of a hole Quantum Dot defined by one of the Gates. Coherent spin manipulation is performed by means of an RF E-Field signal applied to the Gate itself.

cond-mat.mes-hall

Control of single spin in CMOS devices and its application for quantum bits

We show how to measure and manipulate a single spin in a CMOS device fabricated in a pre-industrial 300 mm CMOS foundry. The device can be used as a spin quantum bit working at very low temperature. The spin manipulation is done by a microwave electric field applied directly on a gate. The presented results are a proof-of-principle demonstration of the possibility to define qubits by means of conventional industrial fabrication processes.

cond-mat.mes-hall

SOI technology for quantum information processing

We present recent progress towards the implementation of a scalable quantum processor based on fully-depleted silicon-on-insulator (FDSOI) technology. In particular, we discuss an approach where the elementary bits of quantum information - so-called qubits - are encoded in the spin degree of freedom of gate-confined holes in p-type devices. We show how a hole-spin can be efficiently manipulated by means of a microwave excitation applied to the corresponding confining gate. The hole spin state can be read out and reinitialized through a Pauli blockade mechanism. The studied devices are derived from silicon nanowire field-effect transistors. We discuss their prospects for scalability and, more broadly, the potential advantages of FDSOI technology.

cond-mat.mes-hall

Single layer MoS2 nanoribbon field effect transistor

We study field effect transistor characteristics in etched single layer MoS2 nanoribbon devices of width 50nm with ohmic contacts. We employ a SF6 dry plasma process to etch MoS2 nanoribbons using low etching (RF) power allowing very good control over etching rate. Transconductance measurements reveal a steep sub-threshold slope of 3.5V/dec using a global backgate. Moreover, we measure a high current density of 38 uA/um resulting in high on/off ratio of the order of 10^5. We observe mobility reaching as high as 50 cm^2/V.s with increasing source-drain bias.

cond-mat.mes-hall

Ballistic quantum transport through Ge/Si core/shell nanowires

We study ballistic hole transport through Ge/Si core/shell nanowires at low temperatures. We observe Fabry-P$\acute{e}$rot interference patterns as well as conductance plateaus at integer multiples of 2e$^2$/h at zero magnetic field. Magnetic field evolution of these plateaus reveals large effective Land$\acute{e}$ g-factors. Ballistic effects are observed in nanowires with silicon shell thicknesses of 1 - 3 nm, but not in bare germanium wires. These findings inform the future development of spin and topological quantum devices which rely on ballistic subband-resolved transport.

cond-mat.mes-hall

Pauli spin blockade in CMOS double quantum dot devices

Silicon quantum dots are attractive candidates for the development of scalable, spin-based qubits. Pauli spin blockade in double quantum dots provides an efficient, temperature independent mechanism for qubit readout. Here we report on transport experiments in double gate nanowire transistors issued from a CMOS process on 300 mm silicon-on-insulator wafers. At low temperature the devices behave as two few-electron quantum dots in series. We observe signatures of Pauli spin blockade with a singlet-triplet splitting ranging from 0.3 to 1.3 meV. Magneto-transport measurements show that transitions which conserve spin are shown to be magnetic-field independent up to B = 6 T.

cond-mat.mes-hall