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arXiv · 1912.09805

Si CMOS Platform for Quantum Information Processing

L. Hutin·R. Maurand·D. Kotekar-Patil·A. Corna·H. Bohuslavskyi·X. Jehl·S. Barraud·S. De Franceschi·M. Sanquer·M. Vinet
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Abstract

We report the first quantum bit device implemented on a foundry-compatible Si CMOS platform. The device, fabricated using SOI NanoWire MOSFET technology, is in essence a compact two-gate pFET. The qubit is encoded in the spin degree of freedom of a hole Quantum Dot defined by one of the Gates. Coherent spin manipulation is performed by means of an RF E-Field signal applied to the Gate itself.

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L. Hutin, R. Maurand, D. Kotekar-Patil, A. Corna, H. Bohuslavskyi, X. Jehl, S. Barraud, S. De Franceschi, M. Sanquer, M. Vinet. 2019-12-20. Si CMOS Platform for Quantum Information Processing. https://doi.org/10.1109/vlsit.2016.7573380

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