arXiv subjects

D. N. Basov

Publications and source records attributed to D. N. Basov.

At least 145 records · Page 8Linked to original sources

arXiv2008

Magnetic exchange interaction between rare-earth and Mn ions in multiferroic hexagonal manganites

We report a study of magnetic dynamics in multiferroic hexagonal manganite HoMnO3 by far-infrared spectroscopy. Low-temperature magnetic excitation spectrum of HoMnO3 consists of magnetic-dipole transitions of Ho ions within the crystal-field split J=8 manifold and of the triangular antiferromagnetic resonance of Mn ions. We determine the effective spin Hamiltonian for the Ho ion ground state. The magnetic-field splitting of the Mn antiferromagnetic resonance allows us to measure the magnetic exchange coupling between the rare-earth and Mn ions.

cond-mat.mtrl-sci↗

arXiv2008

Optical Properties of III-Mn-V Ferromagnetic Semiconductors

We review the first decade of extensive optical studies of ferromagnetic, III-Mn-V diluted magnetic semiconductors. Mn introduces holes and local moments to the III-V host, which can result in carrier mediated ferromagnetism in these disordered semiconductors. Spectroscopic experiments provide direct access to the strength and nature of the exchange between holes and local moments; the degree of itineracy of the carriers; and the evolution of the states at the Fermi energy with doping. Taken together, diversity of optical methods reveal that Mn is an unconventional dopant, in that the metal to insulator transition is governed by the strength of the hybridization between Mn and its p-nictogen neighbor. The interplay between the optical, electronic and magnetic properties of III-Mn-V magnetic semiconductors is of fundamental interest and may enable future spin-optoelectronic devices.

cond-mat.mtrl-sci↗

arXiv2008

Determination of the electronic structure of bilayer graphene from infrared spectroscopy results

We present an experimental study of the infrared conductivity, transmission, and reflection of a gated bilayer graphene and their theoretical analysis within the Slonczewski-Weiss-McClure (SWMc) model. The infrared response is shown to be governed by the interplay of the interband and the intraband transitions among the four bands of the bilayer. The position of the main conductivity peak at the charge neutrality point is determined by the interlayer tunneling frequency. The shift of this peak as a function of the gate voltage gives information about less known parameters of the SWMc model, in particular, those responsible for the electron-hole and sublattice asymmetries. These parameter values are shown to be consistent with recent electronic structure calculations for the bilayer graphene and the SWMc parameters commonly used for the bulk graphite.

cond-mat.mes-hall↗

arXiv2008

Dirac charge dynamics in graphene by infrared spectroscopy

A remarkable manifestation of the quantum character of electrons in matter is offered by graphene, a single atomic layer of graphite. Unlike conventional solids where electrons are described with the Schrodinger equation, electronic excitations in graphene are governed by the Dirac Hamiltonian. Some of the intriguing electronic properties of graphene, such as massless Dirac quasiparticles with linear energy-momentum dispersion, have been confirmed by recent observations. Here we report an infrared (IR) spectromicroscopy study of charge dynamics in graphene integrated in gated devices. Our measurements verify the expected characteristics of graphene and, owing to the previously unattainable accuracy of IR experiments, also uncover significant departures of the quasiparticle dynamics from predictions made for Dirac fermions in idealized, free standing graphene. Several observations, including a marked deviation of the energy bands from the simple linear dispersion, point to the relevance of many body interactions to the rather exotic electromagnetic response in graphene.

cond-mat.mes-hall↗

arXiv2008

Charge dynamics in the normal state of the iron oxypnictide superconductor LaFePO

We present the first infrared and optical study in the normal state of ab-plane oriented single crystals of the iron-oxypnictide superconductor LaFePO. We find that this material is a low carrier density metal with a moderate level of correlations and exhibits signatures of electron-boson coupling. The data is consistent with the presence of coherent quasiparticles in LaFePO.

cond-mat.supr-con↗

arXiv2008

Band structure asymmetry of bilayer graphene revealed by infrared spectroscopy

We report on infrared spectroscopy of bilayer graphene integrated in gated structures. We observed a significant asymmetry in the optical conductivity upon electrostatic doping of electrons and holes. We show that this finding arises from a marked asymmetry between the valence and conduction bands, which is mainly due to the inequivalence of the two sublattices within the graphene layer. From the conductivity data, the energy difference of the two sublattices is determined.

cond-mat.mes-hall↗

arXiv2008

Electrostatic modification of infrared response in gated structures based on VO2

We investigate the changes in the infrared response due to charge carriers introduced by electrostatic doping of the correlated insulator vanadium dioxide (VO2) integrated in the architecture of the field effect transistor. Accumulation of holes at the VO2 interface with the gate dielectric leads to an increase in infrared absorption. This phenomenon is observed only in the insulator-to-metal transition regime of VO2 with coexisting metallic and insulating regions. We postulate that doped holes lead to the growth of the metallic islands thereby promoting percolation, an effect that persists upon removal of the applied gate voltage.

cond-mat.str-el↗

arXiv2008

Electrodynamics of the vanadium oxides VO2 and V2O3

The optical/infrared properties of films of vanadium dioxide (VO2) and vanadium sesquioxide (V2O3) have been investigated via ellipsometry and near-normal incidence reflectance measurements from far infrared to ultraviolet frequencies. Significant changes occur in the optical conductivity of both VO2 and V2O3 across the metal-insulator transitions at least up to (and possibly beyond) 6 eV. We argue that such changes in optical conductivity and electronic spectral weight over a broad frequency range is evidence of the important role of electronic correlations to the metal-insulator transitions in both of these vanadium oxides. We observe a sharp optical transition with possible final state (exciton) effects in the insulating phase of VO2. This sharp optical transition occurs between narrow a1g bands that arise from the quasi-one-dimensional chains of vanadium dimers. Electronic correlations in the metallic phases of both VO2 and V2O3 lead to reduction of the kinetic energy of the charge carriers compared to band theory values, with paramagnetic metallic V2O3 showing evidence of stronger correlations compared to rutile metallic VO2.

cond-mat.str-el↗

arXiv2008

Mott transition in VO2 revealed by infrared spectroscopy and nano-imaging

Electrons in correlated insulators are prevented from conducting by Coulomb repulsion between them. When an insulator-to-metal transition is induced in a correlated insulator by doping or heating, the resulting conducting state can be radically different from that characterized by free electrons in conventional metals. We report on the electronic properties of a prototypical correlated insulator vanadium dioxide (VO2) in which the metallic state can be induced by increasing temperature. Scanning near-field infrared microscopy allows us to directly image nano-scale metallic puddles that appear at the onset of the insulator-to-metal transition. In combination with far-field infrared spectroscopy, the data reveal the Mott transition with divergent quasiparticle mass in the metallic puddles. The experimental approach employed here sets the stage for investigations of charge dynamics on the nanoscale in other inhomogeneous correlated electron systems.

cond-mat.str-el↗

arXiv2007

The Missing Link: Magnetism and Superconductivity

The effect of magnetic moments on superconductivity has long been a controversial subject in condensed matter physics. While Matthias and collaborators experimentally demonstrated the destruction of superconductivity in La by the addition of magnetic moments (Gd), it has since been suggested that magnetic fluctuations are in fact responsible for the development of superconducting order in other systems. Currently this debate is focused on several families of unconventional superconductors including high-Tc cuprates, borocarbides as well as heavy fermion systems where magnetism and superconductivity are known to coexist. Here we report a novel aspect of competition and coexistence of these two competing orders in an interesting class of heavy fermion compounds, namely the 1-1-5 series: CeTIn5 where T=Co, Ir, or Rh. Our optical experiments indicate the existence of regions in momentum space where local moments remain unscreened. The extent of these regions in momentum space appears to control both the normal and superconducting state properties in the 1-1-5 family of heavy fermion (HF) superconductors.

cond-mat.supr-con↗

arXiv2007

Light Quasiparticles Dominate Electronic Transport in Molecular Crystal Field-Effect Transistors

We report on an infrared spectroscopy study of mobile holes in the accumulation layer of organic field-effect transistors based on rubrene single crystals. Our data indicate that both transport and infrared properties of these transistors at room temperature are governed by light quasiparticles in molecular orbital bands with the effective masses m* comparable to free electron mass. Furthermore, the m* values inferred from our experiments are in agreement with those determined from band structure calculations. These findings reveal no evidence for prominent polaronic effects, which is at variance with the common beliefs of polaron formation in molecular solids.

cond-mat.mtrl-sci↗

arXiv2007

Disparities in the Josephson vortex state electrodynamics of high-Tc cuprates

We report on far infrared measurements of interplane conductivity for underdoped single-crystal YBa2Cu3Oy in magnetic field and situate these new data within earlier work on two other high-Tc cuprate superconductors, La(2-x)SrxCuO4 and Bi2Sr2CaCu2O(8+d). The three systems have displayed apparently disparate electrodynamic responses in the Josephson vortex state formed when magnetic field H is applied parallel to the CuO2 planes. Specifically, there is discrepancy in the number and field dependence of longitudinal modes observed. We compare and contrast these findings with several models of the electrodynamics in the vortex state and suggest that most differences can be reconciled through considerations of the Josephson vortex lattice ground state as well as the c-axis and in-plane quasiparticle dissipations.

cond-mat.supr-con↗

arXiv2007

Concentration-dependent mobility in organic field-effect transistors probed by infrared spectromicroscopy of the charge density profile

We show that infrared imaging of the charge density profile in organic field-effect transistors (FETs) can probe transport characteristics which are difficult to access by conventional contact-based measurements. Specifically, we carry out experiments and modeling of infrared spectromicroscopy of poly(3-hexylthiophene) (P3HT) FETs in which charge injection is affected by a relatively low resistance of the gate insulators. We conclude that the mobility of P3HT has a power-law density dependence, which is consistent with the activated transport in disorder-induced tails of the density of states.

cond-mat.mtrl-sci↗

arXiv2006

Correlated metallic state of vanadium dioxide

The metal-insulator transition and unconventional metallic transport in vanadium dioxide (VO$_2$) are investigated with a combination of spectroscopic ellipsometry and reflectance measurements. The data indicates that electronic correlations, not electron-phonon interactions, govern charge dynamics in the metallic state of VO$_2$. This study focuses on the frequency and temperature dependence of the conductivity in the regime of extremely short mean free path violating the Ioffe-Regel-Mott limit of metallic transport. The standard quasiparticle picture of charge conduction is found to be untenable in metallic VO$_2$.

cond-mat.str-el↗

arXiv2006

Infrared probe of the anomalous magnetotransport of highly oriented pyrolytic graphite in the extreme quantum limit

We present a systematic investigation of the magnetoreflectance of highly oriented pyrolytic graphite in magnetic field B up to 18 T . From these measurements, we report the determination of lifetimes tau associated with the lowest Landau levels in the quantum limit. We find a linear field dependence for inverse lifetime 1/tau(B) of the lowest Landau levels, which is consistent with the hypothesis of a three-dimensional (3D) to 1D crossover in an anisotropic 3D metal in the quantum limit. This enigmatic result uncovers the origin of the anomalous linear in-plane magnetoresistance observed both in bulk graphite and recently in mesoscopic graphite samples.

cond-mat.mes-hall↗

arXiv2006

Electronic Excitations and Insulator-Metal Transition in Poly(3-hexylthiophene) Organic Field-Effect Transistors

We carry out a comprehensive theoretical and experimental study of charge injection in Poly(3-hexylthiophene) (P3HT) to determine the most likely scenario for metal-insulator transition in this system. We calculate the optical absorption frequencies corresponding to a polaron and a bipolaron lattice in P3HT. We also analyze the electronic excitations for three possible scenarios under which a first-- or a second--order metal--insulator transition can occur in doped P3HT. These theoretical scenarios are compared with data from infrared absorption spectroscopy on P3HT thin film field-effect transistors (FET). Our measurements and theoretical predictions suggest that charge-induced localized states in P3HT FETs are bipolarons and that the highest doping level achieved in our experiments approaches that required for a first-order metal--insulator transition.

cond-mat.mtrl-sci↗

arXiv2006

Impurity Band Conduction in a High Temperature Ferromagnetic Semiconductor

The band structure of a prototypical dilute ferromagnetic semiconductor, Ga$_{1-x}$Mn$_{x}$As, is studied across the phase diagram via optical spectroscopy. We prove that the Fermi energy ($E_{F}$) resides in a Mn induced impurity band (IB). This conclusion is based upon careful analysis of the frequency and temperature dependence of the optical conductivity ($σ_{1}(ω,T)$). From our analysis of $σ_{1}(ω,T)$ we infer a large effective mass ($m^*$) of the carriers, supporting the view that conduction occurs in an IB. Our results also provide useful insights into the transport properties of Mn-doped GaAs.

cond-mat.str-el↗

arXiv2006

Infrared Imaging of the Nanometer-Thick Accumulation Layer in Organic Field-Effect Transistors

We report on infrared (IR) spectro-microscopy of the electronic excitations in nanometer-thick accumulation layers in FET devices based on poly(3-hexylthiophene). IR data allows us to explore the charge injection landscape and uncovers the critical role of the gate insulator in defining relevant length scales. This work demonstrates the unique potential of IR spectroscopy for the investigation of physical phenomena at the nanoscale occurring at the semiconductor-insulator interface in FET devices.

cond-mat.soft↗