arXiv subjects

D. O. Demchenko

Publications and source records attributed to D. O. Demchenko.

6 recordsLinked to original sources

arXiv2006

Influence of interface structure on electronic properties and Schottky barriers in Fe/GaAs magnetic junctions

The electronic and magnetic properties of Fe/GaAs(001) magnetic junctions are investigated using first-principles density-functional calculations. Abrupt and intermixed interfaces are considered, and the dependence of charge transfer, magnetization profiles, Schottky barrier heights, and spin polarization of densities of states on interface structure is studied. With As-termination, an abrupt interface with Fe is favored, while Ga-terminated GaAs favors the formation of an intermixed layer with Fe. The Schottky barrier heights are particularly sensitive to the abruptness of the interface. A significant density of states in the semiconducting gap arises from metal interface states. These spin-dependent interface states lead to a significant minority spin polarization of the density of states at the Fermi level that persists well into the semiconductor, providing a channel for the tunneling of minority spins through the Schottky barrier. These interface-induced gap states and their dependence on atomic structure at the interface are discussed in connection with potential spin-injection applications.

cond-mat.other↗

arXiv2006

Optical transitions and nature of Stokes shift in spherical CdS quantum dots

We study the structure of the energy spectra along with the character of the states participating in optical transitions in colloidal CdS quantum dots (QDs) using the {\sl ab initio} accuracy charge patching method combined with the %pseudopotential based folded spectrum calculations of electronic structure of thousand-atom nanostructures. In particular, attention is paid to the nature of the large resonant Stokes shift observed in CdS quantum dots. We find that the top of the valence band state is bright, in contrast with the results of numerous {\bf k$\cdot$p} calculations, and determine the limits of applicability of the {\bf k$\cdot$p} approach. The calculated electron-hole exchange splitting suggests the spin-forbidden valence state may explain the nature of the ``dark exciton'' in CdS quantum dots.

cond-mat.mtrl-sci↗

arXiv2004

Effect of Particle-Hole Asymmetry on the Mott-Hubbard Metal-Insulator Transition

The Mott-Hubbard metal-insulator transition is one of the most important problems in correlated electron systems. In the past decade, much progress has been made on examining a particle-hole symmetric form of the transition in the Hubbard model with dynamical mean field theory where it was found that the electronic self energy develops a pole at the transition. We examine the particle-hole asymmetric metal-insulator transition in the Falicov-Kimball model, and find that a number of features change when the noninteracting density of states has a finite bandwidth. Since, generically particle-hole symmetry is broken in real materials, our results have an impact on understanding the metal-insulator transition in real materials.

cond-mat.str-el↗

arXiv2003

Electronic Structure of Transition-Metal Dicyanamides Me[N(CN)$_2$]$_2$ (Me = Mn, Fe, Co, Ni, Cu)

The electronic structure of Me[N(CN)$_2$]$_2$ (Me=Mn, Fe, Co, Ni, Cu) molecular magnets has been investigated using x-ray emission spectroscopy (XES) and x-ray photoelectron spectroscopy (XPS) as well as theoretical density-functional-based methods. Both theory and experiments show that the top of the valence band is dominated by Me 3d bands, while a strong hybridization between C 2p and N 2p states determines the valence band electronic structure away from the top. The 2p contributions from non-equivalent nitrogen sites have been identified using resonant inelastic x-ray scattering spectroscopy with the excitation energy tuned near the N 1s threshold. The binding energy of the Me 3d bands and the hybridization between N 2p and Me 3d states both increase in going across the row from Me = Mn to Me = Cu. Localization of the Cu 3d states also leads to weak screening of Cu 2p and 3s states, which accounts for shifts in the core 2p and 3s spectra of the transition metal atoms. Calculations indicate that the ground-state magnetic ordering, which varies across the series is largely dependent on the occupation of the metal 3d shell and that structural differences in the superexchange pathways for different compounds play a secondary role.

cond-mat.mtrl-sci↗

arXiv2003

Thermal transport in the Falicov-Kimball model on a Bethe lattice

We calculate thermal transport in the Falicov-Kimball model on an infinite-coordination-number Bethe lattice. We perform numerical calculations of the thermoelectric characteristics and concentrate on finding materials parameters for which the electronic thermoelectric figure-of-merit ZT is large, suggesting potential cooling and power generation applications. Surprisingly, the Bethe lattice has significant qualitative and quantitative differences with the previously studied hypercubic lattice. At low temperature it is unlikely that these systems can be employed in thermoelectric devices due to the low conductivities and due to a larger lattice contribution to the thermal conductivity $κ_L$, but at high temperature, the thermoelectric parameters appear more promising for devices due to a significant enhancement of ZT and a smaller relative contribution by the lattice thermal conductivity.

cond-mat.str-el↗

arXiv2002

Electron Spin Polarization in Resonant Interband Tunneling Devices

We study spin-dependent interband resonant tunneling in double-barrier InAs/AlSb/ GaMnSb heterostructures. We demonstrate that these structures can be used as spin filters utilizing spin-selective tunneling of electrons through the light-hole resonant channel. High densities of the spin polarized electrons injected into bulk InAs make spin resonant tunneling devices a viable alternative for injecting spins into a semiconductor. Another striking feature of the proposed devices is the possibility of inducing additional resonant channels corresponding to the heavy holes. This can be implemented by saturating the in-plane magnetization in the quantum well.

cond-mat.mtrl-sci↗