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Electron Spin Polarization in Resonant Interband Tunneling Devices

A. G. Petukhov·D. O. Demchenko·A. N. Chantis
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Abstract

We study spin-dependent interband resonant tunneling in double-barrier InAs/AlSb/ GaMnSb heterostructures. We demonstrate that these structures can be used as spin filters utilizing spin-selective tunneling of electrons through the light-hole resonant channel. High densities of the spin polarized electrons injected into bulk InAs make spin resonant tunneling devices a viable alternative for injecting spins into a semiconductor. Another striking feature of the proposed devices is the possibility of inducing additional resonant channels corresponding to the heavy holes. This can be implemented by saturating the in-plane magnetization in the quantum well.

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A. G. Petukhov, D. O. Demchenko, A. N. Chantis. 2002-11-14. Electron Spin Polarization in Resonant Interband Tunneling Devices. https://doi.org/10.1103/physrevb.68.125332

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