arXiv subjects

D. Reuter

Publications and source records attributed to D. Reuter.

At least 73 records · Page 4Linked to original sources

arXiv2011

Probing single charge fluctuations in a semiconductor with laser spectroscopy on a quantum dot

We probe local charge fluctuations in a semiconductor via laser spectroscopy on a nearby self-assembled quantum dot. We demonstrate that the quantum dot is sensitive to changes in the local environment at the single charge level. By controlling the charge state of localized defects, we are able to infer the distance of the defects from the quantum dot with +-5 nm resolution. The results identify and quantify the main source of charge noise in the commonly-used optical field-effect devices. Based on this understanding we achieve routinely close-totransform-limited quantum dot optical linewidths.

cond-mat.mes-hall↗

arXiv2011

Optical control of coherent interactions between quantum dot electron spins

Coherent interactions between spins in quantum dots are a key requirement for quantum gates. We have performed pump-probe experiments in which pulsed lasers emitting at different photon energies manipulate two distinct subsets of electron spins within an inhomogeneous InGaAs quantum dot ensemble. The spin dynamics are monitored through their precession about an external magnetic field. These measurements demonstrate spin precession phase shifts and modulations of the magnitude of one subset of oriented spins after optical orientation of the second subset. The observations are consistent with results from a model using a Heisenberg-like interaction with microeV-strength.

cond-mat.mes-hall↗

arXiv2011

Observation of the Kondo Effect in a Spin-3/2 Hole Quantum Dot

We report the observation of Kondo physics in a spin- 3/2 hole quantum dot. The dot is formed close to pinch-off in a hole quantum wire defined in an undoped AlGaAs/GaAs heterostructure. We clearly observe two distinctive hallmarks of quantum dot Kondo physics. First, the Zeeman spin-splitting of the zero-bias peak in the differential conductance is independent of gate voltage. Second, this splitting is twice as large as the splitting for the lowest one-dimensional subband. We show that the Zeeman splitting of the zero-bias peak is highly-anisotropic, and attribute this to the strong spin-orbit interaction for holes in GaAs.

cond-mat.mes-hall↗

arXiv2011

Generation and detection of mode-locked spin coherence in (In,Ga)As/GaAs quantum dots by laser pulses of long duration

Using optical pulses of variable duration up to 80 ps, we report on spin coherence initialization and its subsequent detection in n-type singly-charged quantum dots, subject to a transverse magnetic field, by pump-probe techniques. We demonstrate experimentally and theoretically that the spin coherence generation and readout efficiencies are determined by the ratio of laser pulse duration to spin precession period: An increasing magnetic field suppresses the spin coherence signals for a fixed duration of pump and/or probe pulses, and this suppression occurs for smaller fields the longer the pulse duration is. The reason for suppression is the varying spin orientation due to precession during pulse action.

cond-mat.mes-hall↗

arXiv2011

Ultrafast mapping of optical polarization states onto spin coherence of localized electrons in a semiconductor

We experimentally demonstrate an ultrafast method for preparing spin states of donor-bound electrons in GaAs with single laser pulses. Each polarization state of a preparation pulse has a direct mapping onto a spin state, with bijective correspondence between the Poincaré-sphere (for photon polarization) and Bloch-sphere (for spin) state representations. The preparation is governed by a stimulated Raman process and occurs orders of magnitude faster than the spontaneous emission and spin dephasing. Similar dynamics governs our ultrafast optical Kerr detection of the spin coherence, thus getting access to spin state tomography. Experiments with double preparation pulses show an additive character for the preparation method. Utilization of these phenomena is of value for quantum information schemes.

cond-mat.mes-hall↗

arXiv2010

Polarization-preserving confocal microscope for optical experiments in a dilution refrigerator with high magnetic field

We present the design and operation of a fiber-based cryogenic confocal microscope. It is designed as a compact cold-finger that fits inside the bore of a superconducting magnet, and which is a modular unit that can be easily swapped between use in a dilution refrigerator and other cryostats. We aimed at application in quantum optical experiments with electron spins in semiconductors and the design has been optimized for driving with, and detection of optical fields with well-defined polarizations. This was implemented with optical access via a polarization maintaining fiber together with Voigt geometry at the cold finger, which circumvents Faraday rotations in the optical components in high magnetic fields. Our unit is versatile for use in experiments that measure photoluminescence, reflection, or transmission, as we demonstrate with a quantum optical experiment with an ensemble of donor-bound electrons in a thin GaAs film.

cond-mat.mes-hall↗

arXiv2010

Electromagnetically Induced Transparency with an Ensemble of Donor-Bound Electron Spins in a Semiconductor

We present measurements of electromagnetically induced transparency with an ensemble of donor- bound electrons in low-doped n-GaAs. We used optical transitions from the Zeeman-split electron spin states to a bound trion state in samples with optical densities of 0.3 and 1.0. The electron spin dephasing time T* \approx 2 ns was limited by hyperfine coupling to fluctuating nuclear spins. We also observe signatures of dynamical nuclear polarization, but find these effects to be much weaker than in experiments that use electron spin resonance and related experiments with quantum dots.

cond-mat.mes-hall↗

arXiv2010

Effect of pump-probe detuning on the Faraday rotation and ellipticity signals of mode-locked spins in InGaAs quantum dots

We have studied the Faraday rotation and ellipticity signals in ensembles of singly-charged (In,Ga)As/GaAs quantum dots by pump-probe spectroscopy. For degenerate pump and probe we observe that the Faraday rotation signal amplitude first grows with increasing the time separation between pump and probe before a decay is observed for large temporal separations. The temporal behavior of the ellipticity signal, on the other hand, is regular: its amplitude decays with the separation. By contrast, for detuned pump and probe the Faraday rotation and ellipticty signals both exhibit similar and conventional behavior. The experimental results are well described in the frame of a recently developed microscopic theory [Phys. Rev. B 80, 104436 (2009)]. The comparison between calculations and experimental data allows us to provide insight into the spectral dependence of the electron spin precession frequencies and extract the electron g-factor dependence on energy.

cond-mat.mes-hall↗

arXiv2010

Non-equilibrium many-particle spin states in self-assembled quantum dot hydrogen, helium and lithium

We introduce an all-electrical measurement technique, which makes it possible to prepare and detect the ground and excited many-particle states in self-assembled InAs QDs at 4K. This way, the pure-electron spectra of QD-hydrogen, -helium and -lithium are resolved. Comparison with detailed many-body calculations enables us to identify the different charge configurations and in particular detect the singlet and triplet spin states of QD helium. Furthermore, the time-resolved evolution of the density of states from non-equilibrium to equilibrium charge occupation is shown.

cond-mat.mes-hall↗

arXiv2010

Nanostructures in p-GaAs with improved tunability

A nano-fabrication technique is presented which enables the fabrication of highly tunable devices on p-type, C-doped GaAs/AlGaAs heterostructures containing shallow two-dimensional hole systems. The high tunability of these structures is provided by the complementary electrostatic effects of intrinsic in-plane gates and evaporated metallic top-gates. Quantum point contacts fabricated with this technique were tested by electrical conductance spectroscopy.

cond-mat.mes-hall↗

arXiv2010

Evidence for localization and 0.7 anomaly in hole quantum point contacts

Quantum point contacts implemented in p-type GaAs/AlGaAs heterostructures are investigated by low-temperature electrical conductance spectroscopy measurements. Besides one-dimensional conductance quantization in units of $2e^{2}/h$ a pronounced extra plateau is found at about $0.7(2e^{2}/h)$ which possesses the characteristic properties of the so-called "0.7 anomaly" known from experiments with n-type samples. The evolution of the 0.7 plateau in high perpendicular magnetic field reveals the existence of a quasi-localized state and supports the explanation of the 0.7 anomaly based on self-consistent charge localization. These observations are robust when lateral electrical fields are applied which shift the relative position of the electron wavefunction in the quantum point contact, testifying to the intrinsic nature of the underlying physics.

cond-mat.mes-hall↗

arXiv2010

Suppressed spin dephasing for 2D and bulk electrons in GaAs wires due to engineered cancellation of spin-orbit interaction terms

We report a study of suppressed spin dephasing for quasi-one-dimensional electron ensembles in wires etched into a GaAs/AlGaAs heterojunction system. Time-resolved Kerr-rotation measurements show a suppression that is most pronounced for wires along the [110] crystal direction. This is the fingerprint of a suppression that is enhanced due to a strong anisotropy in spin-orbit fields that can occur when the Rashba and Dresselhaus contributions are engineered to cancel each other. A surprising observation is that this mechanisms for suppressing spin dephasing is not only effective for electrons in the heterojunction quantum well, but also for electrons in a deeper bulk layer.

cond-mat.mes-hall↗

arXiv2010

Spin dynamics of electrons and holes in InGaAs/GaAs quantum wells at milliKelvin temperatures

The carrier spin dynamics in a n-doped (In,Ga)As/GaAs quantum well has been studied by time-resolved Faraday rotation and ellipticity techniques in the temperature range down to 430 milliKelvin. These techniques give data with very different spectral dependencies, from which nonetheless consistent information on the spin dynamics can be obtained, in agreement with theoretical predictions. The mechanisms of long-lived spin coherence generation are discussed for the cases of trion and exciton resonant excitation. We demonstrate that carrier localization leads to a saturation of spin relaxation times at 45 ns for electrons below 4.5 K and at 2 ns for holes below 2.3 K. The underlying spin relaxation mechanisms are discussed.

cond-mat.mes-hall↗

arXiv2009

Ultrafast optical rotations of electron spins in quantum dots

Coherent manipulation of quantum bits (qubits) on time scales much shorter than the coherence time is a key prerequisite for quantum information processing. Electron spins in quantum dots (QDs) are particularly attractive for implementations of qubits. Efficient optical methods for initialization and readout of spins have been developed in recent years. Spin coherence times in the microsecond range have been demonstrated, so that spin control by picosecond optical pulses would be highly desirable. Then a large number of spin rotations could be performed while coherence is maintained. A major remaining challenge is demonstration of such rotations with high fidelity. Here we use an ensemble of QD electron spins focused into a small number of precession modes about a magnetic field by periodic optical pumping. We demonstrate ultrafast optical rotations of spins about arbitrary axes on a picosecond time scale using laser pulses as control fields.

cond-mat.mes-hall↗

arXiv2009

Optical probing of spin dynamics of two-dimensional and bulk electrons in a GaAs/AlGaAs heterojunction system

We present time-resolved Kerr rotation measurements of electron spin dynamics in a GaAs/AlGaAs heterojunction system that contains a high-mobility two-dimensional electron gas (2DEG). Due to the complex layer structure of this material the Kerr rotation signals contain information from electron spins in three different layers: the 2DEG layer, a GaAs epilayer in the heterostructure, and the underlying GaAs substrate. The 2DEG electrons can be observed at low pump intensities, using that they have a less negative g-factor than electrons in bulk GaAs regions. At high pump intensities, the Kerr signals from the GaAs epilayer and the substrate can be distinguished when using a barrier between the two layers that blocks intermixing of the two electron populations. This allows for stronger pumping of the epilayer, which results in a shift of the effective g-factor. Thus, three populations can be distinguished using differences in g-factor. We support this interpretation by studying how the spin dynamics of each population has its unique dependence on temperature, and how they correlate with time-resolved reflectance signals.

cond-mat.mes-hall↗

arXiv2009

Observation of orientation- and $k$-dependent Zeeman spin-splitting in hole quantum wires on (100)-oriented AlGaAs/GaAs heterostructures

We study the Zeeman spin-splitting in hole quantum wires oriented along the $[011]$ and $[01\bar{1}]$ crystallographic axes of a high mobility undoped (100)-oriented AlGaAs/GaAs heterostructure. Our data shows that the spin-splitting can be switched `on' (finite $g^{*}$) or `off' (zero $g^{*}$) by rotating the field from a parallel to a perpendicular orientation with respect to the wire, and the properties of the wire are identical for the two orientations with respect to the crystallographic axes. We also find that the $g$-factor in the parallel orientation decreases as the wire is narrowed. This is in contrast to electron quantum wires, where the $g$-factor is enhanced by exchange effects as the wire is narrowed. This is evidence for a $k$-dependent Zeeman splitting that arises from the spin-3/2 nature of holes.

cond-mat.mes-hall↗

arXiv2009

The Knight field and the local nuclear dipole-dipole field in an (In,Ga)As quantum dot ensemble

We present a comprehensive investigation of the electron-nuclear system of negatively charged InGaAs/GaAs self-assembled quantum dots under the influence of weak external magnetic fields (up to 2 mT). We demonstrate that, in contrast to conventional semiconductor systems, these small fields have a profound influence on the electron spin dynamics, via the hyperfine interaction. Quantum dots, with their comparatively limited number of nuclei, present electron-nuclear behavior that is unique to low-dimensional systems. We show that the conventional Hanle effect used to measure electron spin relaxation times, for example, cannot be used in these systems when the spin lifetimes are long. An individual nucleus in the QD is subject to milli-Tesla effective fields, arising from the interaction with its nearest-neighbors and with the electronic Knight field. The alignment of each nucleus is influenced by application of external fields of the same magnitude. A polarized nuclear system, which may have an effective field strength of several Tesla, may easily be influenced by these milli-Tesla fields. This in turn has a dramatic effect on the electron spin dynamics, and we use this technique to gain a measure of both the dipole-dipole field and the maximum Knight field in our system, thus allowing us to estimate the maximum Overhauser field that may be generated at zero external magnetic field. We also show that one may fine-tune the angle which the Overhauser field makes with the optical axis.

cond-mat.other↗

arXiv2009

Spin noise of electrons and holes in self-assembled quantum dots

We measure the frequency spectra of random spin fluctuations, or "spin noise", in ensembles of (In,Ga)As/GaAs quantum dots (QDs) at low temperatures. We employ a spin noise spectrometer based on a sensitive optical Faraday rotation magnetometer that is coupled to a digitizer and field-programmable gate array, to measure and average noise spectra from 0-1 GHz continuously in real time with sub-nanoradian/root-Hz sensitivity. Both electron and hole spin fluctuations generate distinct noise peaks, whose shift and broadening with magnetic field directly reveal their g-factors and dephasing rates within the ensemble. A large, energy-dependent anisotropy of the in-plane hole g-factor is clearly exposed, reflecting systematic variations in the average QD confinement potential.

cond-mat.mes-hall↗