arXiv subjects

D. Reuter

Publications and source records attributed to D. Reuter.

117 records · Page 7Linked to original sources

arXiv2004

Low-field diffusion magneto-thermopower of a high mobility two-dimensional electron gas

The low magnetic field diffusion thermopower of a high mobility GaAs-heterostructure has been measured directly on an electrostatically defined micron-scale Hall-bar structure at low temperature (T = 1.6 K) in the low magnetic field regime (B < 1.2 T) where delocalized quantum Hall states do not influence the measurements. The sample design allowed the determination of the field dependence of the thermopower both parallel and perpendicular to the temperature gradient, denoted respectively by Sxx (longitudinal thermopower) and Syx (Nernst-Ettinghausen coefficient). The experimental data show clear oscillations in Sxx and Syx due to the formation of Landau levels for 0.3 T < B < 1.2 T and reveal that Syx is approximately 120 times larger than Sxx at a magnetic field of 1 T, which agrees well with the theoretical prediction.

cond-mat.mes-hall↗

arXiv2003

Magnetization of a two-dimensional electron gas with a second filled subband

We have measured the magnetization of a dual-subband two-dimensional electron gas, confined in a GaAs/AlGaAs heterojunction. In contrast to two-dimensional electron gases with a single subband, we observe non-1/B-periodic, triangularly shaped oscillations of the magnetization with an amplitude significantly less than $1 μ_{\mathrm{B}}^*$ per electron. All three effects are explained by a field dependent self-consistent model, demonstrating the shape of the magnetization is dominated by oscillations in the confining potential. Additionally, at 1 K, we observe small oscillations at magnetic fields where Landau-levels of the two different subbands cross.

cond-mat.mes-hall↗

arXiv2003

Phase measurements using Two-Channel Fano Interference in a Semiconductor Quantum Dot

We investigate a lateral semiconductor quantum dot with a large number of electrons in the semi-open Fano regime. In transport measurements we observe three stable series of Fano resonances with similar lineshapes. We present a simple model explaining the temperature and V_{SD} dependence of the resonances. The Fano regime allows to investigate phase and coherence of the electronic wave function and astonishingly, we find no signs of decoherence in our system.

cond-mat.mes-hall↗

arXiv2003

Hopping Conductivity Beyond The Percolation Regime Probed By Shot-Noise Measurements

We have observed suppression of shot noise in the variable-range hopping regime for a two-dimensional electron gas whose localization length, xi, is controlled by a gate voltage. We have found that the suppression factor F (Fano factor) is approximately inversely proportional to the length of the system L (F=L0*/L) for a broad range of values of xi/L_0*, where L0* is the characteristic length. In the case xi/L0*<<1, we have identified L0* with the distance L0 between the hard hops along the sample length. On the other hand, when xi is of the order of L0*, we have observed that L0* does not agree with L0 calculated from the percolation model of hopping. We attribute this discrepancy to a breakdown of that model and to a reconstruction of the hopping paths.

cond-mat.mes-hall↗

arXiv2003

Observation of two relaxation mechanisms in transport between spin split edge states at high imbalance

Using a quasi-Corbino geometry to directly study electron transport between spin-split edge states, we find a pronounced hysteresis in the I-V curves, originating from slow relaxation processes. We attribute this long-time relaxation to the formation of a dynamic nuclear polarization near the sample edge. The determined characteristic relaxation times are 25 s and 200 s which points to the presence of two different relaxation mechanisms. The two time constants are ascribed to the formation of a local nuclear polarization due to flip-flop processes and the diffusion of nuclear spins.

cond-mat.mes-hall↗

arXiv2002

Flux-quantum-modulated Kondo conductance in a multielectron quantum dot

We investigate a lateral semiconductor quantum dot with a large number of electrons in the limit of strong coupling to the leads. A Kondo effect is observed and can be tuned in a perpendicular magnetic field. This Kondo effect does not exhibit Zeeman splitting. It shows a modulation with the periodicity of one flux quantum per dot area at low temperatures. The modulation leads to a novel, strikingly regular stripe pattern for a wide range in magnetic field and number of electrons.

cond-mat.mes-hall↗

arXiv2002

Fabrication of quantum point contacts by engraving GaAs/AlGaAs-heterostructures with a diamond tip

We use the all-diamond tip of an atomic force microscope for the direct engraving of high quality quantum point contacts in GaAs/AlGaAs-heterostructures. The processing time is shortened by two orders of magnitude compared to standard silicon tips. Together with a reduction of the line width to below 90 nm the depletion length of insulating lines is reduced by a factor of two with the diamond probes. The such fabricated defect free ballistic constrictions show well resolved conductance plateaus and the 0.7 anomaly in electronic transport measurements.

cond-mat.mes-hall↗

arXiv2001

Aharonov-Bohm cages in the GaAlAs/GaAs system

Aharonov-Bohm oscillations have been observed in a lattice formed by a two dimensional rhombus tiling. This observation is in good agreement with a recent theoretical calculation of the energy spectrum of this so-called T3 lattice. We have investigated the low temperature magnetotransport of the T3 lattice realized in the GaAlAs/GaAs system. Using an additional electrostatic gate, we have studied the influence of the channel number on the oscillations amplitude. Finally, the role of the disorder on the strength of the localization is theoretically discussed.

cond-mat.mes-hall↗

arXiv1999

Electron-Assisted Hopping in Two Dimensions

We have studied the non-ohmic effects in the conductivity of a two-dimensional system which undergoes the crossover from weak to strong localization with decreasing electron concentration. When the electrons are removed from equilibrium with phonons, the hopping conductivity depends only on the electron temperature. This indicates that the hopping transport in a system with a large localization length is assisted by electron-electron interactions rather than by the phonons.

cond-mat.mes-hall↗