arXiv subjects

Daniel T. Larson

Publications and source records attributed to Daniel T. Larson.

At least 19 recordsLinked to original sources

arXiv2026

Probing the Penetration Depth of Topological Surface States by Magnetic Impurity Scattering in V-doped Sb$_2$Te$_3$

Topological insulators host Dirac surface states (SS) protected by time-reversal symmetry. Inter-surface hybridization can gap the SS and give rise to the quantum spin Hall effect in films that are sufficiently thin compared to the SS penetration depth. However, quantifying the SS penetration depth typically requires painstaking synthesis of multiple films with varying thickness. Here we introduce a direct method to probe the SS penetration depth in bulk crystals, by studying the interplay between SS and magnetic impurities in \SVT. Using scanning tunneling microscopy and spectroscopy, we find that even sparse magnetic impurities ($\lesssim0.25\%$ vanadium) can gap the Dirac SS. However, a single V impurity induces only localized states, and does not form an impurity band, so the gapped Dirac dispersion is preserved away from the impurity. In high magnetic fields, we observe an energy shift of the $0^\text{th}$ Landau level and a suppression of quasiparticle lifetime at the Dirac point, indicating \newtext{magnetic} scattering of the SS. Crucially, by employing V impurities at different depths as precise scattering probes, we reveal the SS penetration depth on the sub-nanometer scale in a bulk crystal.

cond-mat.mes-hall↗

arXiv2026

Twisted bilayer graphene from first-principles: structural and electronic properties

We present a comprehensive first-principles study of twisted bilayer graphene (tBLG) for a wide range of twist angles, with a focus on structural and electronic properties. By employing density functional theory (DFT) with an optimized local basis set, we simulate tBLG, obtaining fully relaxed commensurate structures for twist angles down to 0.987{\deg}. For all angles the lattice relaxation agrees well with continuum elastic models. For angles accessible to plane-wave DFT (VASP), we provide a detailed comparison with our local basis DFT (SIESTA) calculations, demonstrating excellent agreement in both the atomic and electronic structure. The dependence of the Fermi velocity and band width on the twist angle shows qualitative agreement with results from an `exact' $\mathbf{k \cdot p}$ continuum model, but reveals a small twist angle offset. Additionally, we provide details of the low-energy wavefunction character, band inversion and symmetries. Our results provide an ab initio reference point for the microscopic structure and electronic properties of tBLG which will serve as the foundation for future studies incorporating many-body effects.

cond-mat.mes-hall↗

arXiv2025

Switching topological states via uniaxial strain in 2D materials

In topological materials, dissipationless edge currents are protected against local defect scattering by the bulk inverted band structure and band gap. We propose that large uniaxial strain can effectively switch a 2D Chern insulator to a topologically trivial state. Further, we suggest that the boundary between strained and unstrained regions of a sample can act as a new edge for dissipationless current flow. Using density functional theory (DFT) calculations we demonstrate the strain-tunability of the monolayer MnBi2S2T2 band structure and the switching of the Chern number. We combine uniaxial and biaxial strain results to map out the strain-tuned topological phase diagram.

cond-mat.str-el↗

arXiv2025

Wavefunction textures in twisted bilayer graphene from first principles

Motivated by recent experiments probing the wavefunctions of magic-angle twisted bilayer graphene (tBLG), we perform large-scale first-principles calculations of tBLG with full atomic relaxation across a wide range of twist angles down to $0.99^\circ$. Focusing on the magic angle, we compute wavefunctions of the low energy bands, resolving atomic-scale details and moir\'e-scale patterns that form triangular, honeycomb, and Kagome lattices. By tuning the interlayer interactions, we illustrate the formation of the flat bands from isolated monolayers and the emergence of the band inversion and fragile topology at a sufficiently large interaction strength. We identify strong indicators of a new phase transition with increasing interlayer interaction strength, achievable with external pressure or a decrease in the twist angle. When this transition occurs, the upper and lower flat bands exchange their wavefunction character and symmetry eigenvalues, which may be correlated with the appearance of superconductivity with electron doping below the magic angle. Our study demonstrates the feasibility of using first-principles wavefunctions to help interpret experimental signatures of topological and correlated phases in tBLG.

cond-mat.mes-hall↗

arXiv2025

Universal Symmetries in Twisted Moir\'e Materials

Two-dimensional multi-layer materials with an induced moir\'e pattern, either due to strain or relative twist between layers, provide a versatile platform for exploring strongly correlated and topological electronic phenomena. While these systems offer unprecedented tunability, their theoretical description remains challenging due to their complex atomic structures and large unit cells. A notable example is twisted bilayer graphene, where even the relevant symmetry group remains unsettled despite its critical role in constructing effective theories. Here, we focus on twisted bilayer graphene and use a combination of analytical methods, molecular dynamics simulations, and first-principles calculations to show that twisted atomic configurations with distinct microscopic symmetries converge to a universal interlayer structure that governs the low-energy physics. This emergent universality provides a robust foundation for symmetry-respecting models and offers insight into the role of commensurability in real twisted moir\'e systems.

cond-mat.str-el↗

arXiv2024

Stacking-dependent electronic structure of ultrathin perovskite bilayers

Twistronics has received much attention as a new method to manipulate the properties of 2D van der Waals structures by introducing moir\'e patterns through a relative rotation between two layers. Here we begin a theoretical exploration of twistronics beyond the realm of van der Waals materials by developing a first-principles description of the electronic structure and interlayer interactions of ultrathin perovskite bilayers. We construct both an ab initio tight-binding model as well as a minimal 3-band effective model for the valence bands of monolayers and bilayers of oxides derived from the Ruddlesden-Popper phase of perovskites, which is amenable to thin-layer formation. We illustrate the approach with the specific example of Sr$_2$TiO$_4$ layers but also provide model parameters for Ca$_2$TiO$_4$ and Ba$_2$TiO$_4$ .

cond-mat.mtrl-sci↗

arXiv2024

Engineering Interfacial Charge Transfer through Modulation Doping for 2D Electronics

Two-dimensional (2D) semiconductors are likely to dominate next-generation electronics due to their advantages in compactness and low power consumption. However, challenges such as high contact resistance and inefficient doping hinder their applicability. Here, we investigate workfunction-mediated charge transfer (modulation doping) as a pathway for achieving high-performance p-type 2D transistors. Focusing on type-III band alignment, we explore the doping capabilities of 27 candidate materials, including transition metal oxides, oxyhalides, and {\alpha}-RuCl3, on channel materials such as transition metal dichalcogenides (TMDs) and group-III nitrides. Our extensive first-principles density functional theory (DFT) reveal p-type doping capabilities of high electron affinity materials, including {\alpha}-RuCl3, MoO3, and V2O5. We predict significant reductions in contact resistance and enhanced channel mobility through efficient hole transfer without introducing detrimental defects. We analyze transistor geometries and identify promising material combinations beyond the current focus on WSe2 doping, suggesting new avenues for hBN, AlN, GaN, and MoS2. This comprehensive investigation provides a roadmap for developing high-performance p-type monolayer transistors toward the realization of 2D electronics.

cond-mat.mtrl-sci↗

arXiv2024

2D Nitride Ordered Alloys: A Novel Class of Ultra-Wide Bandgap Semiconductors

Ultra-wide bandgap (UWBG) semiconductors are poised to transform power electronics by surpassing the capabilities of established wide bandgap materials, such as GaN and SiC, owing to their capability to operate at higher voltage, frequency, and temperature ranges. While bulk group-III nitrides and their alloys have been extensively studied in the UWBG realm, their two-dimensional counterparts remain unexplored. Here, we examine the stability and electronic properties of monolayers of ordered boron-based group-III nitride alloys with general formula BxM1-xN, where M = Al, Ga. On the basis of ab initio calculations we identify a number of energetically and dynamically stable structures. Instrumental to their stability is a previously overlooked out-of-plane displacement (puckering) of atoms, which induces a polar ordering and antiferroelectric ground state. Our findings reveal the energy barrier between metastable ferroelectric states is lowered by successive switching of out-of-plane displacements through an antiferroelectric state.

cond-mat.mtrl-sci↗

arXiv2024

Nanoscale variation of the Rashba energy in BiTeI

BiTeI is a polar semiconductor with strong spin-orbit coupling (SOC) that produces large Rashba spin splitting. Due to its potential utility in spintronics and magnetoelectrics, it is essential to understand how defects impact the spin transport in this material. Using scanning tunneling microscopy and spectroscopy, we image ring-like charging states of single-atom defects on the iodine surface of BiTeI. We observe nanoscale variations in the Rashba energy around each defect, which we correlate with the local electric field extracted from the bias dependence of each ring radius. Our data demonstrate the local impact of atomic defects on the Rashba effect, which is both a challenge and an opportunity for the development of future nanoscale spintronic devices.

cond-mat.mes-hall↗

arXiv2023

Twisted bilayer graphene revisited: minimal two-band model for low-energy bands

An accurate description of the low-energy electronic bands in twisted bilayer graphene (tBLG) is of great interest due to their relation to correlated electron phases, such as superconductivity and Mott-insulator behavior at half-filling. The paradigmatic model of Bistritzer and MacDonald [PNAS 108, 12233 (2011)], based on the moir\'e pattern formed by tBLG, predicts the existence of "magic angles" at which the Fermi velocity of the low-energy bands goes to zero, and the bands themselves become dispersionless. Here, we reexamine the low-energy bands of tBLG from the ab initio electronic structure perspective, motivated by features related to the atomic relaxation in the moir\'e pattern, namely circular regions of AA stacking, triangular regions of AB/BA stacking and domain walls separating the latter. We find that the bands are never perfectly flat and the Fermi velocity never vanishes, but rather a "magic range" exists where the lower band becomes extremely flat and the Fermi velocity attains a non-zero minimum value. We propose a simple $(2+2)$-band model, comprised of two different pairs of orbitals, both on a honeycomb lattice: the first pair represents the low-energy bands with high localization at the AA sites, while the second pair represents highly dispersive bands associated with domain-wall states. This model gives an accurate description of the low-energy bands with few (13) parameters which are physically motivated and vary smoothly in the magic range. In addition, we derive an effective two-band hamiltonian which also gives an accurate description of the low-energy bands. This minimal two-band model affords a connection to a Hubbard-like description of the occupancy of sub-bands and can be used a basis for exploring correlated states.

cond-mat.mes-hall↗

arXiv2023

Modulating the electrochemical intercalation of graphene interfaces with $α$-RuCl$_3$ as a solid-state electron acceptor

Intercalation reactions modify the charge density in van der Waals (vdW) materials through coupled electronic-ionic charge accumulation, and are susceptible to modulation by interlayer hybridization in vdW heterostructures. Here, we demonstrate that charge transfer between graphene and $α$-RuCl$_3$, which dopes the graphene positively, greatly favors the intercalation of lithium ions into graphene-based vdW heterostructures. We systematically tune this effect on Li$^+$ ion intercalation, modulating the intercalation potential, by using varying thicknesses of hexagonal boron nitride (hBN) as spacer layers between graphene and $α$-RuCl$_3$. Confocal Raman spectroscopy and electronic transport measurements are used to monitor electrochemical intercalation and density functional theory computations help quantify charge transfer to both $α$-RuCl$_3$ and graphene upon Li intercalation. This work demonstrates a versatile approach for systematically modulating the electrochemical intercalation behavior of two-dimensional layers akin to electron donating/withdrawing substituent effects used to tune molecular redox potentials.

cond-mat.mtrl-sci↗

arXiv2023

Semiclassical Electron and Phonon Transport from First Principles: Application to Layered Thermoelectrics

Thermoelectrics are a promising class of materials for renewable energy owing to their capability to generate electricity from waste heat, with their performance being governed by a competition between charge and thermal transport. A detailed understanding of energy transport at the nanoscale is thus of paramount importance for developing efficient thermoelectrics. Here, we provide a comprehensive overview of the methodologies adopted for the computational design and optimization of thermoelectric materials from first-principles calculations. First, we introduce density-functional theory, the fundamental tool to describe the electronic and vibrational properties of solids. Next, we review charge and thermal transport in the semiclassical framework of the Boltzmann transport equation, with a particular emphasis on the various scattering mechanisms between phonons, electrons, and impurities. Finally, we illustrate how these approaches can be deployed in determining the figure of merit of tin and germanium selenides, an emerging family of layered thermoelectrics that exhibits a promising figure of merit. Overall, this review article offers practical guidelines to achieve an accurate assessment of the thermoelectric properties of materials by means of computer simulations.

cond-mat.mtrl-sci↗

arXiv2023

Low-energy moiré phonons in twisted bilayer van der Waals heterostructures

We develop a low-energy continuum model for phonons in twisted moiré bilayers, based on a configuration-space approach. In this approach, interatomic force constants are obtained from density functional theory (DFT) calculations of untwisted bilayers with various in-plane shifts. This allows for efficient computation of phonon properties for any small twist angle, while maintaining DFT-level accuracy. Based on this framework, we show how the low-energy phonon modes, including interlayer shearing and layer-breathing modes, vary with the twist angle. As the twist angle decreases, the frequencies of the low-energy modes are reordered and the atomic displacement fields corresponding to phonon eigenmodes break translational symmetry, developing periodicity on the moiré length scale. We demonstrate the capabilities of our model by calculating the phonon properties of three specific structures: bilayer graphene, bilayer molybdenum disulfide (MoS$_2$), and molybdenum diselenide-tungsten diselenide (MoSe$_2$-WSe$_2$).

cond-mat.mes-hall↗

arXiv2022

First principles physics-informed neural network for quantum wavefunctions and eigenvalue surfaces

Physics-informed neural networks have been widely applied to learn general parametric solutions of differential equations. Here, we propose a neural network to discover parametric eigenvalue and eigenfunction surfaces of quantum systems. We apply our method to solve the hydrogen molecular ion. This is an ab-initio deep learning method that solves the Schrodinger equation with the Coulomb potential yielding realistic wavefunctions that include a cusp at the ion positions. The neural solutions are continuous and differentiable functions of the interatomic distance and their derivatives are analytically calculated by applying automatic differentiation. Such a parametric and analytical form of the solutions is useful for further calculations such as the determination of force fields.

cs.LG↗

arXiv2022

Outstanding thermoelectric performance predicted for out-of-plane p-doped GeSe

The record-breaking thermoelectric performance of tin selenide (SnSe) has motivated the investigation of analogue compounds with the same structure. A promising candidate that emerged recently is germanium selenide (GeSe). Here, using extensive first-principles calculations of the hole-phonon and hole-impurity scattering, we investigate the thermoelectric transport properties of the orthorhombic phase of p-doped GeSe. We predict outstanding thermoelectric performance for GeSe over a broad range of temperatures due to its high Seebeck coefficients, extremely low Lorenz numbers, ultralow total thermal conductivity, and relatively large band gap. In particular, the out-of-plane direction in GeSe presents equivalent or even higher performance than SnSe for temperatures above 500 K. By extending the analysis to 900 K, we obtained an ultrahigh value for the thermoelectric figure of merit (zT = 3.2) at the optimal hole density of 4x10^19 cm^-3. Our work provides strong motivation for continued experimental work focusing on improving the GeSe doping efficiency in order to achieve this optimal hole density.

cond-mat.mtrl-sci↗

arXiv2021

Spectroscopic Signatures of Interlayer Coupling in Janus MoSSe/MoS2 Heterostructures

The interlayer coupling in van der Waals heterostructures governs a variety of optical and electronic properties. The intrinsic dipole moment of Janus transition metal dichalcogenides (TMDs) offers a simple and versatile approach to tune the interlayer interactions. In this work, we demonstrate how the van der Waals interlayer coupling and charge transfer of Janus MoSSe/MoS2 heterobilayers can be tuned by the twist angle and interface composition. Specifically, the Janus heterostructures with a sulfur/sulfur (S/S) interface display stronger interlayer coupling than the heterostructures with a selenium/sulfur (Se/S) interface as shown by the low-frequency Raman modes. The differences in interlayer interactions are explained by the interlayer distance computed by density-functional theory (DFT). More intriguingly, the built-in electric field contributed by the charge density redistribution and interlayer coupling also play important roles in the interfacial charge transfer. Namely, the S/S and Se/S interfaces exhibit different levels of PL quenching of MoS2 A exciton, suggesting the enhanced and reduced charge transfer at the S/S and Se/S interface, respectively. Our work demonstrates how the asymmetry of Janus TMDs can be used to tailor the interfacial interactions in van der Waals heterostructures.

cond-mat.mtrl-sci↗

arXiv2021

Microscopic origin of the excellent thermoelectric performance in n-doped SnSe

Excellent thermoelectric performance in the out-of-layer n-doped SnSe has been observed experimentally (Chang et al., Science 360, 778-783 (2018)). However, a first-principles investigation of the dominant scattering mechanisms governing all thermoelectric transport properties is lacking. In the present work, by applying extensive first-principles calculations of electron-phonon coupling associated with the calculation of the scattering by ionized impurities, we investigate the reasons behind the superior figure of merit as well as the enhancement of zT above 600 K in n-doped out-of-layer SnSe, as compared to p-doped SnSe with similar carrier densities. For the n-doped case, the relaxation time is dominated by ionized impurity scattering and increases with temperature, a feature that maintains the power factor at high values at higher temperatures and simultaneously causes the carrier thermal conductivity at zero electric current (k_el) to decrease faster for higher temperatures, leading to an ultrahigh-zT = 3.1 at 807 K. We rationalize the roles played by k_el and k^0 (the thermal conductivity due to carrier transport under isoelectrochemical conditions) in the determination of zT. Our results show the ratio between k^0 and the lattice thermal conductivity indeed corresponds to the upper limit for zT, whereas the difference between calculated zT and the upper limit is proportional to k_el.

cond-mat.mtrl-sci↗

arXiv2020

Boosting the efficiency of ab initio electron-phonon coupling calculations through dual interpolation

The coupling between electrons and phonons in solids plays a central role in describing many phenomena, including superconductivity and thermoelecric transport. Calculations of this coupling are exceedingly demanding as they necessitate integrations over both the electron and phonon momenta, both of which span the Brillouin zone of the crystal, independently. We present here an ab initio method for efficiently calculating electron-phonon mediated transport properties by dramatically accelerating the computation of the double integrals with a dual interpolation technique that combines maximally localized Wannier functions with symmetry-adapted plane waves. The performance gain in relation to the current state-of-the-art Wannier-Fourier interpolation is approximately 2n_s \times M, where n_s is the number of crystal symmetry operations and M, a number in the range 5 - 60, governs the expansion in star functions. We demonstrate with several examples how our method performs some ab initio calculations involving electron-phonon interactions.

cond-mat.mtrl-sci↗