arXiv subjects

David Estrada

Publications and source records attributed to David Estrada.

6 recordsLinked to original sources

arXiv2020

Removal and Recovery of Ammonia from Wastewater using Ti$_3$C$_2$T$_x$ MXenes in Flow Electrode Capacitive Deionization

Flowing electrode capacitive deionization systems (FE-CDI) have recently garnered attention because of their ability to prevent cross contamination and operate in uninterrupted cycles ad infinitum. Typically, FE-CDI electrodes suffer from low conductivity, reducing deionization performance. Utilization of higher mass loadings to combat this leads to poor rheological properties. Herein, Ti$_3$C$_2$T$_x$ MXene was introduced as 1 mg/mL slurry electrodes in an FE-CDI system for the removal and recovery of ammonia from simulated agricultural wastewater. The electrode performance was evaluated by operating the FE-CDI system with a feed solution of 500 mg/L NH$_4$Cl running in batch mode at a constant voltage of 1.20 V and -1.20 V in charging and discharging modes, respectively. Despite the low loading, Ti$_3$C$_2$T$_x$ flowing electrodes showed markedly improved performance, achieving 60% ion removal efficiency in a saturation time of 115 minutes with an adsorption capacity of 460 mg/g. To understand the high adsorption performance of the electrodes, physiochemical and structural analysis was done via a variety of characterization techniques such as SEM, TEM, XRD, DLS, and Raman Spectroscopy. Cyclic Voltammetry and Galvanostatic charge/discharge profiles were obtained to evaluate the electrochemical properties of the electrodes. The system proved to be an energy-saving technology by exhibiting a charge efficiency of 58-70% while operating at an energy consumption of 0.45 kWh/kg. A 92% regeneration efficiency showed that the electrodes were stable and suitable for long term and scalable usage. The results demonstrate that MXenes have the potential to improve the FE-CDI process for energy-efficient removal and recovery of ammonia.

physics.app-ph↗

arXiv2018

Open-source automated chemical vapor deposition system for the production of two - dimensional nanomaterials

The study of two- dimensional (2D) materials is a rapidly growing area within nanomaterial research. However, the high equipment costs, which include the processing systems necessary for creating these materials, can be a barrier to entry for some researchers interested in studying these novel materials. Such process systems include those used for chemical vapor deposition. This article presents the first open-source design for an automated chemical vapor deposition system that can be built for less than a third of the cost for a similar commercial system. Our design can be easily customized and expanded on, depending upon the needs of the user. With a process chamber built as described, we demonstrate that a variety of 2D nanomaterials and their heterostructures can be grown via chemical vapor deposition. Specifically, our experimental results demonstrate the capability of this open-source design in producing high quality, 2D nanomaterials such as graphene and tungsten disulfide, which are at the forefront of research in emerging semiconductor devices, sensors, and energy storage applications.

physics.app-ph↗

arXiv2016

Thermal Conductivity of Chirality-Sorted Carbon Nanotube Networks

The thermal properties of single-walled carbon nanotubes (SWNTs) are of significant interest, yet their dependence on SWNT chirality has been, until now, not explored experimentally. Here we used electrical heating and infrared thermal imaging to simultaneously study thermal and electrical transport in chirality-sorted SWNT networks. We examined solution processed 90% semiconducting, 90% metallic, purified unsorted (66% semiconducting), and as-grown HiPco SWNT films. The thermal conductivities of these films range from 80 to 370 W/m/K but are not controlled by chirality, instead being dependent on the morphology (i.e. mass and junction density, quasi-alignment) of the networks. The upper range of the thermal conductivities measured is comparable to that of the best metals (Cu and Ag) but with over an order of magnitude lower mass density. This study reveals important factors controlling the thermal properties of light-weight chirality-sorted SWNT films, for potential thermal and thermoelectric applications.

cond-mat.mtrl-sci↗

arXiv2011

Imaging Dissipation and Hot Spots in Carbon Nanotube Network Transistors

We use infrared thermometry of carbon nanotube network (CNN) transistors and find the formation of distinct hot spots during operation. However, the average CNN temperature at breakdown is significantly lower than expected from the breakdown of individual nanotubes, suggesting extremely high regions of power dissipation at the nanotube junctions. Statistical analysis and comparison with a thermal model allow the extraction of the average tube-tube junction thermal resistance, ~4.4x10^11 K/W (thermal conductance ~2.27 pW/K). This indicates that nanotube junctions have a much greater impact on CNN transport, dissipation, and reliability than extrinsic factors such as low substrate thermal conductivity.

cond-mat.mes-hall↗

arXiv2010

Imaging, simulation, and electrostatic control of power dissipation in graphene devices

We directly image hot spot formation in functioning mono- and bilayer graphene field effect transistors (GFETs) using infrared thermal microscopy. Correlating with an electrical-thermal transport model provides insight into carrier distributions, fields, and GFET power dissipation. The hot spot corresponds to the location of minimum charge density along the GFET; by changing the applied bias this can be shifted between electrodes or held in the middle of the channel in ambipolar transport. Interestingly, the hot spot shape bears the imprint of the density of states in mono- vs. bilayer graphene. More broadly, we find that thermal imaging combined with self-consistent simulation provides a non-invasive approach for more deeply examining transport and energy dissipation in nanoscale devices.

cond-mat.mes-hall↗

arXiv2010

Reduction of Hysteresis for Carbon Nanotube Mobility Measurements Using Pulsed Characterization

We describe a pulsed measurement technique to suppress hysteresis for carbon nanotube (CNT) device measurements in air, vacuum, and over a wide temperature range (80-453 K). Varying the gate pulse width and duty cycle probes the relaxation times associated with charge trapping near the CNT, found to be up to the 0.1-10 s range. Longer off times between voltage pulses enable consistent, hysteresis-free measurements of CNT mobility. A tunneling front model for charge trapping and relaxation is also described, suggesting trap depths up to 4-8 nm for CNTs on SiO2. Pulsed measurements will also be applicable to other nanoscale devices such as graphene, nanowires, and molecular electronics, and could enable probing trap relaxation times in a variety of material system interfaces.

cond-mat.mes-hall↗