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arXiv · 0909.4104

Reduction of Hysteresis for Carbon Nanotube Mobility Measurements Using Pulsed Characterization

David Estrada·Sumit Dutta·Albert Liao·Eric Pop
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Abstract

We describe a pulsed measurement technique to suppress hysteresis for carbon nanotube (CNT) device measurements in air, vacuum, and over a wide temperature range (80-453 K). Varying the gate pulse width and duty cycle probes the relaxation times associated with charge trapping near the CNT, found to be up to the 0.1-10 s range. Longer off times between voltage pulses enable consistent, hysteresis-free measurements of CNT mobility. A tunneling front model for charge trapping and relaxation is also described, suggesting trap depths up to 4-8 nm for CNTs on SiO2. Pulsed measurements will also be applicable to other nanoscale devices such as graphene, nanowires, and molecular electronics, and could enable probing trap relaxation times in a variety of material system interfaces.

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David Estrada, Sumit Dutta, Albert Liao, Eric Pop. 2010-03-22. Reduction of Hysteresis for Carbon Nanotube Mobility Measurements Using Pulsed Characterization. https://doi.org/10.1088/0957-4484%2F21%2F8%2F085702

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