arXiv subjects

David Fuertes Marrón

Publications and source records attributed to David Fuertes Marrón.

7 recordsLinked to original sources

arXiv2026

Production of Upgraded Metallurgical Grade (UMG) silicon for a low-cost high-efficiency and reliable PV technology

UMG-Si has the potential to reduce the cost of PV technology and to improve its environmental profile. In this contribution, we summarize the extensive work made in the research and development of UMG technology for PV, which has led to the demonstration of UMG-Si as a competitive alternative to polysilicon for the production of high-efficiency multicrystalline solar cells and modules. The tailoring of the processing steps along the complete Ferrosolar's UMG-Si manufacturing value chain has been addressed, commencing with the purification stage that results in a moderately compensated material due to the presence of phosphorous and boron. Gallium is added as a dopant at the crystallization stage to obtain a uniform resistivity profile 1 Ohm*cm along the ingot height. Defect engineering techniques based on phosphorus diffusion gettering have been optimized to improve the bulk electronic quality of UMG-Si wafers. Black silicon texturing, compatible with subsequent gettering and surface passivation, has been successfully implemented. Industrial-type BSF and PERC solar cells have been fabricated, achieving cell efficiencies in the range of those obtained with conventional polysilicon substrates. TOPCon solar cell processing key steps have also been tested to further evaluate the potential of the material in advanced device architectures beyond PERC. Degradation mechanisms related to light exposure and operation temperature have been shown not to be significant in UMG PERC solar cells when a regeneration step is implemented, and PV modules with several years of outdoor operation have demonstrated similar performance to reference ones based on poly-Si. LCA has been carried out to evaluate the environmental impact of UMG-based PV technology when compared to the poly-Si-based one, considering different scenarios both for the manufacturing sites and the PV installations.

cond-mat.mtrl-sci↗

arXiv2022

Van Der Waals Heteroepitaxy of GaSe and InSe, Quantum Wells and Superlattices

Bandgap engineering and quantum confinement in semiconductor heterostructures provide the means to fine-tune material response to electromagnetic fields and light in a wide range of the spectrum. Nonetheless, forming semiconductor heterostructures on lattice-mismatched substrates has been a challenge for several decades, leading to restrictions for device integration and the lack of efficient devices in important wavelength bands. Here, we show that the van der Waals epitaxy of two-dimensional (2D) GaSe and InSe heterostructures occur on substrates with substantially different lattice parameters, namely silicon and sapphire. The GaSe/InSe heterostructures were applied in the growth of quantum wells and superlattices presenting photoluminescence and absorption related to interband transitions. Moreover, we demonstrate a self-powered photodetector based on this heterostructure on Si that works in the visible-NIR wavelength range. Fabricated at wafer-scale, these results pave the way for an easy integration of optoelectronics based on these layered 2D materials in current Si technology.

cond-mat.mtrl-sci↗

arXiv2022

Hybrid III-V/SiGe solar cells on Si substrates and porous Si substrates

A tandem GaAsP/SiGe solar cell has been developed employing group-IV reverse buffer layers grown on silicon substrates with a subsurface porous layer. Reverse buffer layers facilitate a reduction in the threading dislocation density with limited thicknesses, but ease the appearance of cracks, as observed in previous designs grown on regular Si substrates. In this new design, a porous silicon layer has been incorporated close to the substrate surface. The ductility of this layer helps repress the propagation of cracks, diminishing the problems of low shunt resistance and thus improving solar cell performance. The first results of this new architecture are presented here.

cond-mat.mtrl-sci↗

arXiv2022

High carrier lifetimes in UMG multicrystalline wafers after P- diffusion compatible with high-efficiency cell structures

High-quality multicrystalline Upgraded Metallurgical Grade Silicon (UMG-Si) offers significant advantages over conventional polysilicon-based PV technology, associated to lower cost, lower energy budget and lower carbon footprint. The aim of this study is twofold: on the one hand, to ascertain the efficiency potential of solar cells based on this material in terms of carrier lifetime; and on the other hand, to explore, as a result of that, the adoption of high-efficiency cell architectures by establishing an effective rear-side passivation scheme for the implementation of passivated emitter rear contact (PERC) devices. The carrier lifetime and the surface passivation efficacy are investigated for different passivating layer configurations after single and double P-diffusion gettering processes. Layer stacks consisting of Al2O3, SiOxNy and a-SiNx:H capping overlayers have been optimized, on industrial size, saw-damage-etched UMG wafers and results compared to those obtained using reference iodine-ethanol (IE) passivation. Diagnosis based on minority carrier lifetime and implied Voc (iVoc) measurements helped monitor the impact of parameter optimization on wafer quality, particularly after firing processes. Carrier lifetimes over 600 us at 10^15 cm-3 injection level as well as up to 790 us locally have been measured in UMG-Si wafers passivated with IE after a Phosphorus Diffusion Gettering (PDG), demonstrating the suitability of the material for high-efficiency cell architectures. Values higher than 300 us have been obtained with Al2O3-based passivation layers for gettered UMG wafers, with implied Voc values up to 710 mV. These record-breaking lifetimes and iVoc figures obtained with p-type multicrystalline UMG-Si material demonstrate a significant upgrading of its electronic quality by means of industry-scalable technical processes.

cond-mat.mtrl-sci↗

arXiv2021

Bulk carrier lifetime surpassing 600 us in Upgraded Metallurgical-grade Silicon multicrystalline wafers after Phosphorus Diffusion Gettering

Upgraded metallurgical-grade (UMG) Si is obtained via a purification route alternative to the one used for conventional polysilicon and with significantly reduced environmental impact. Additionally, despite a lower purity level in the feedstock than polysilicon, UMG-Si has demonstrated potential for the fabrication of highly efficient and low-cost solar cells. Low initial bulk carrier lifetimes recorded in UMG-Si bare wafers can be improved by means of an adequate Phosphorus Diffusion Gettering (PDG) process to the level of mc-Si. In this letter, optimized PDG processes for UMG-Si are reported, resulting in increased values between 20 and 250 times the original carrier lifetimes and record figures above 645 us.

cond-mat.mtrl-sci↗

arXiv2021

Phosphorous Diffusion Gettering of Trapping Centers in Upgraded Metallurgical-Grade Solar Silicon

Experimental evidence indicating the beneficial impact of a phosphorous diffusion gettering (PDG) in the reduction of trapping centers is shown, as observed by means of inductively coupled photoconductance (PC) decay and lifetime measurements carried out on upgraded metallurgical-grade silicon (UMG-Si) wafers. The presence of trapping species dominating the long time range of the PC decay of UMG material (slow traps), which is effectively removed after a PDG conducted at 780 Celsius, is detected. Notwithstanding, a second trapping mechanism, characterized by a shorter time constant, still governs the response at very low injection levels after the gettering. Furthermore, the beneficial effect of the PDG is studied as a function of processing time, showing minority carrier bulk lifetime improvements up to 18-fold, up to the range of 70 us. Thereby, the way for developing gettering strategies capable of successfully removing trap centers and improving the bulk lifetime of unconventional Si material is paved.

physics.app-ph↗

arXiv2019

Optical response of (InGa)(AsSb)/GaAs quantum dots embedded in a GaP matrix

The optical response of (InGa)(AsSb)/GaAs quantum dots (QDs) grown on GaP (001) substrates is studied by means of excitation and temperature-dependent photoluminescence (PL), and it is related to their complex electronic structure. Such QDs exhibit concurrently direct and indirect transitions, which allows the swapping of $Γ$ and $L$ quantum confined states in energy, depending on details of their stoichiometry. Based on realistic data on QD structure and composition, derived from high-resolution transmission electron microscopy (HRTEM) measurements, simulations by means of $\mathbf{k\cdot p}$ theory are performed. The theoretical prediction of both momentum direct and indirect type-I optical transitions are confirmed by the experiments presented here. Additional investigations by a combination of Raman and photoreflectance spectroscopy show modifications of the hydrostatic strain in the QD layer, depending on the sequential addition of QDs and capping layer. A variation of the excitation density across four orders of magnitude reveals a 50 meV energy blueshift of the QD emission. Our findings suggest that the assignment of the type of transition, based solely by the observation of a blueshift with increased pumping, is insufficient. We propose therefore a more consistent approach based on the analysis of the character of the blueshift evolution with optical pumping, which employs a numerical model based on a semi-self-consistent configuration interaction method.

cond-mat.mes-hall↗