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arXiv · 2111.13522

Bulk carrier lifetime surpassing 600 us in Upgraded Metallurgical-grade Silicon multicrystalline wafers after Phosphorus Diffusion Gettering

Nerea Dasilva-Villanueva·Sergio Catalán-Gómez·David Fuertes Marrón·Miguel García-Corpas·Carlos del Cañizo
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Abstract

Upgraded metallurgical-grade (UMG) Si is obtained via a purification route alternative to the one used for conventional polysilicon and with significantly reduced environmental impact. Additionally, despite a lower purity level in the feedstock than polysilicon, UMG-Si has demonstrated potential for the fabrication of highly efficient and low-cost solar cells. Low initial bulk carrier lifetimes recorded in UMG-Si bare wafers can be improved by means of an adequate Phosphorus Diffusion Gettering (PDG) process to the level of mc-Si. In this letter, optimized PDG processes for UMG-Si are reported, resulting in increased values between 20 and 250 times the original carrier lifetimes and record figures above 645 us.

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Nerea Dasilva-Villanueva, Sergio Catalán-Gómez, David Fuertes Marrón, Miguel García-Corpas, Carlos del Cañizo. 2021-11-26. Bulk carrier lifetime surpassing 600 us in Upgraded Metallurgical-grade Silicon multicrystalline wafers after Phosphorus Diffusion Gettering. https://arxiv.org/abs/2111.13522

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