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David Vanderbilt

Publications and source records attributed to David Vanderbilt.

At least 109 records · Page 6Linked to original sources
arXiv2014

Chern insulator at a magnetic rocksalt interface

Considerable efforts have recently been devoted to the experimental realization of a two-dimensional Chern insulator, i.e., a system displaying a quantum anomalous Hall effect. However, existing approaches such as those based on magnetic doping of topological-insulator thin films have resulted in small band gaps, restricting the effect to low temperatures. We use first-principles calculations to demonstrate that an interface between thin films of the topologically trivial ferromagnetic insulators EuO and GdN can result in a band inversion and a non-zero Chern number. Both materials are stoichiometric and the interface is non-polar and lattice-matched, which should allow this interface to be achievable experimentally. We show that the band structure can be tuned by layer thickness or epitaxial strain, and can result in Chern insulators with gaps of over 0.1 eV.

cond-mat.mtrl-sci↗
arXiv2014

Dynamical magnetic charges and linear magnetoelectricity

Magnetoelectric (ME) materials are of fundamental interest and have been investigated for their broad potential for technological applications. The search for, and eventually the theoretical design of, materials with large ME couplings present challenging issues. First-principles methods have only recently been developed to calculate the full ME response tensor $α$ including both electronic and ionic (i.e., lattice-mediated) contributions. The latter is proportional to both the Born dynamical electric charge $Z^{\rm e}$ and its analogue, the dynamical magnetic charge $Z^{\rm m}$. Here we present a theoretical study of the magnetic charge $Z^{\rm m}$ and the mechanisms that could enhance it. Using first-principles density-functional methods, we calculate the atomic $Z^{\rm m}$ tensors in $\rm{Cr_2O_3}$, a prototypical magnetoelectric, and in KITPite, a fictitious material that has previously been reported to show a strong ME response arising from exchange striction effects. Our results confirm that in $\rm{Cr_2O_3}$, the $Z^{\rm m}$ values and resulting ME responses arise only from spin-orbit coupling (SOC) and are therefore rather weak. In KITPite, by contrast, the exchange striction acting on the non-collinear spin structure induces much $Z^{\rm m}$ values that persist even when SOC is completely absent.

cond-mat.mtrl-sci↗
arXiv2013

Wannier Center Sheets in Topological Insulators

We argue that various kinds of topological insulators (TIs) can be insightfully characterized by an inspection of the charge centers of the hybrid Wannier functions, defined as the orbitals obtained by carrying out a Wannier transform on the Bloch functions in one dimension while leaving them Bloch-like in the other two. From this procedure, one can obtain the Wannier charge centers (WCCs) and plot them in the two-dimensional projected Brillouin zone. We show that these WCC sheets contain the same kind of topological information as is carried in the surface energy bands, with the crucial advantage that the topological properties of the bulk can be deduced from bulk calculations alone. The distinct topological behaviors of these WCC sheets in trivial, Chern, weak, strong, and crystalline TIs are first illustrated by calculating them for simple tight-binding models. We then present the results of first-principles calculations of the WCC sheets in the trivial insulator Sb$_2$Se$_3$, the weak TI KHgSb, and the strong TI Bi$_2$Se$_3$, confirming the ability of this approach to distinguish between different topological behaviors in an advantageous way.

cond-mat.mes-hall↗
arXiv2013

Hyperferroelectrics: proper ferroelectrics with persistent polarization

All known proper ferroelectrics are unable to polarize normal to a surface or interface if the resulting depolarization field is unscreened, but there is no fundamental principle that enforces this behavior. In this work, we introduce hyperferroelectrics, a new class of proper ferroelectrics which polarize even when the depolarization field is unscreened, this condition being equivalent to instability of a longitudinal optic mode in addition to the transverse-optic-mode instability characteristic of proper ferroelectrics. We use first principles calculations to show that several recently discovered hexagonal ferroelectric semiconductors have this property, and we examine its consequences both in the bulk and in a superlattice geometry.

cond-mat.mtrl-sci↗
arXiv2013

Topological phase transitions in (Bi$_{1-x}$In$_{x})_2$Se$_3$ and (Bi$_{1-x}$Sb$_{x})_2$Se$_3$

We study the phase transition from a topological to a normal insulator with concentration $x$ in (Bi$_{1-x}$In$_{x})_2$Se$_3$ and (Bi$_{1-x}$Sb$_{x})_2$Se$_3$ in the Bi$_2$Se$_3$ crystal structure. We carry out first-principles calculations on small supercells, using this information to build Wannierized effective Hamiltonians for a more realistic treatment of disorder. Despite the fact that the spin-orbit coupling (SOC) strength is similar in In and Sb, we find that the critical concentration $x_{\rm c}$ is much smaller in (Bi$_{1-x}$In$_{x})_2$Se$_3$ than in (Bi$_{1-x}$Sb$_{x})_2$Se$_3$. For example, the direct supercell calculations suggest that $x_{\rm c}$ is below 12.5% and above 87.5$%$ for the two alloys respectively. More accurate results are obtained from realistic disordered calculations, where the topological properties of the disordered systems are understood from a statistical point of view. Based on these calculations, $x_c$ is around 17% for (Bi$_{1-x}$In$_{x})_2$Se$_3$, but as high as 78%-83% for (Bi$_{1-x}$Sb$_{x})_2$Se$_3$. In (Bi$_{1-x}$Sb$_{x})_2$Se$_3$, we find that the phase transition is dominated by the decrease of SOC, with a crossover or "critical plateau" observed from around 78$%$ to 83$%$. On the other hand, for (Bi$_{1-x}$In$_{x})_2$Se$_3$, the In 5$s$ orbitals suppress the topological band inversion at low impurity concentration, therefore accelerating the phase transition. In (Bi$_{1-x}$In$_{x})_2$Se$_3$ we also find a tendency of In atoms to segregate.

cond-mat.mtrl-sci↗
arXiv2013

First-principles theory and calculation of flexoelectricity

We develop a general and unified first-principles theory of piezoelectric and flexoelectric tensor, formulated in such a way that the tensor elements can be computed directly in the context of density-functional calculations, including electronic and lattice contributions. We introduce a practical supercell-based methods for calculating the flexoelectric coefficients from first principles, and demonstrate them by computing the coefficients for a variety of cubic insulating materials, including C, Si, MgO, NaCl, CsCl, BaZrO3, BaTiO3, PbTiO3 and SrTiO3.

cond-mat.mtrl-sci↗
arXiv2013

Effective J=1/2 insulating state in Ruddlesden-Popper iridates: An LDA+DMFT study

Using ab-initio methods for correlated electrons in solids, we investigate the metal-insulator transition across the Ruddlesden-Popper (RP) series of iridates and explore the robustness of the J_eff=1/2 state against band effects due to itineracy, tetragonal distortion, octahedral rotation and Coulomb interaction. We predict the effects of epitaxial strain on the optical conductivity, magnetic moments, and J_eff=1/2 ground-state wave functions in the RP series. To describe the solution of the many-body problem in an intuitive picture, we introduce a concept of energy-dependent atomic states, which strongly resemble the atomic J_eff=1/2 states but with coefficients that are energy/time-dependent. We demonstrate that the deviation from the ideal J_eff=1/2 state is negligible at short time scales for both single- and double-layer iridates, while it becomes quite significant for Sr3Ir2O7 at long times and low energy. Interestingly, Sr2IrO4 is positioned very close to the SU(2) limit, with only 3% deviation from the ideal J_eff=1/2 situation.

cond-mat.str-el↗
arXiv2013

Pseudopotentials for high-throughput DFT calculations

The increasing use of high-throughput density-functional theory (DFT) calculations in the computational design and optimization of materials requires the availability of a comprehensive set of soft and transferable pseudopotentials. Here we present design criteria and testing results for a new open-source "GBRV" ultrasoft pseudopotential library that has been optimized for use in high-throughput DFT calculations. We benchmark the GBRV potentials, as well as two other pseudopotential sets available in the literature, to all-electron calculations in order to validate their accuracy. The results allow us to draw conclusions about the accuracy of modern pseudopotentials in a variety of chemical environments.

cond-mat.mtrl-sci↗
arXiv2013

Canonical magnetic insulators with isotropic magnetoelectric coupling

We have performed an exhaustive representation-theory-based search for the simplest structures allowing isotropic magnetoelectric coupling. We find 30 such structures, all sharing a common pattern of atomic displacements in the direction of atomic magnetic moments. We focus on one of these 30 canonical structures and find that it is generically realized in a class of fractionally substituted pyrochlore compounds with an all-in-all-out magnetic order. Furthermore, we find that these substituted pyrochlore compounds have a substantial Chern-Simons orbital magnetoelectric component (θ=0.1--0.2). While this component is also formally present in strong Z_2 topological insulators (θ=π), its effects are observable there only if time-reversal symmetry is broken at the surface.

cond-mat.mtrl-sci↗
arXiv2012

Chern insulators from heavy atoms on magnetic substrates

We propose searching for Chern insulators by depositing atomic layers of elements with large spin-orbit coupling (e.g., Bi) on the surface of a magnetic insulator. We argue that such systems will typically have isolated surface bands with non-zero Chern numbers. If these overlap in energy, a metallic surface with large anomalous Hall conductivity (AHC) will result; if not, a Chern-insulator state will typically occur. Thus, our search strategy reduces to looking for examples having the Fermi level in a global gap extending across the entire Brillouin zone. We verify this search strategy and identify several candidate systems by using first-principles calculations to compute the Chern number and AHC of a large number of such systems on MnTe, MnSe, and EuS surfaces. Our search reveals several promising Chern insulators with gaps of up to 140\,meV.

cond-mat.mtrl-sci↗
arXiv2012

Electrically driven octahedral rotations in SrTiO3 and PbTiO3

We investigate the oxygen octahedral rotations that occur in two perovskites, SrTiO3 and PbTiO3, as a function of applied three-dimensional electric displacement field, allowing us to map out the phase diagram of rotations in both the paraelectric and ferroelectric regions of the polar response. First-principles calculations at fixed electric displacement field are used to extract parameters of a Landau-Devonshire model that is analyzed to identify the phase boundaries between different rotational states. The calculations reveal a rich phase diagram of rotations versus applied field in both SrTiO3 and PbTiO3, although the details are quite different in the two cases.

cond-mat.mtrl-sci↗
arXiv2012

Orthorhombic $ABC$ semiconductors as antiferroelectrics

We use a first-principles rational-design approach to identify a previously-unrecognized class of antiferroelectric materials in the $Pnma$ MgSrSi structure type. The MgSrSi structure type can be described in terms of antipolar distortions of the nonpolar $P6_{3}/mmc$ ZrBeSi structure type, and we find many members of this structure type are close in energy to the related polar $P6_{3}mc$ LiGaGe structure type, which includes many members we predict to be ferroelectric. We highlight known $ABC$ combinations in which this energy difference is comparable to the antiferroelectric-ferroelectric switching barrier of PbZrO$_{3}$. We calculate structural parameters and relative energies for all three structure types, both for reported and as-yet hypothetical representatives of this class. Our results provide guidance for the experimental realization and further investigation of high-performance materials suitable for practical applications.

cond-mat.mtrl-sci↗
arXiv2012

Full magnetoelectric response of Cr2O3 from first principles

The linear magnetoelectric response of Cr2O3 at zero temperature is calculated from first principles by tracking the change in magnetization under a macroscopic electric field. Both the spin and the orbital contributions to the induced magnetization are computed, and in each case the response is decomposed into lattice and electronic parts. We find that the transverse response is dominated by the spin-lattice and spin-electronic contributions, whose calculated values are consistent with static and optical magnetoelectric measurements. In the case of the longitudinal response, orbital contributions dominate over spin contributions, but the net calculated longitudinal response remains much smaller than the experimentally measured one at low temperatures. We also discuss the absolute sign of the magnetoelectric coupling in the two time-reversed magnetic domains of Cr2O3.

cond-mat.mtrl-sci↗
arXiv2012

Structure and energetics of a ferroelectric organic crystal of phenazine and chloranilic acid

We report first-principles calculations for a ferroelectric organic crystal of phenazine and chloranilic acid molecules. Weak intermolecular interactions are properly treated by using a second version of van der Waals density functional known as vdW-DF2 [K. Lee et al., Phys. Rev. B 82, 081101 (2010)]. Lattice constants, total energies, spontaneous electric polarizations, phonon modes and frequencies, and the energy barrier of proton transfer are calculated and compared with PBE and experiments whenever possible. We show that the donation of one proton from a chloranilic acid molecule to a neighboring phenazine molecule is energetically favorable. This proton transfer is the key structural change that breaks the centrosymmetry and leads to the ferroelectric structure. However, there is no unstable phonon associated with the proton transfer, and an energy barrier of 8 meV is found between the paraelectric and ferroelectric states.

cond-mat.mtrl-sci↗
arXiv2012

Bloch-type Domain Walls in Rhombohedral BaTiO3

Ferroelectric domain walls (FDWs) are usually considered to be of Ising type, but there have been suggestions in recent years that Bloch-type FDWs are also possible in some cases, e.g., in the rhombohedral phase of BaTiO3. The mechanically compatible and electrically neutral FDWs in rhombohedral BaTiO3 are of 71-degree, 109-degree, and 180-degree type. We have investigated these FDWs based both on first-principles calculations and on a Ginzburg-Landau-Devonshire (GLD) model [P. Marton, I. Rychetsky, and J. Hlinka, Phys. Rev. B 81, 144125 (2010)]. The results from both approaches confirm the Ising nature of the 71-degree FDW and the Bloch nature of the 180-degree FDW, and predict both Ising-type and Bloch-type FDWs are possible for the 109-degree case. Considering the relatively small rhombohedral strain in BaTiO3, the competition between the energies of Bloch and Ising FDWs can be discussed in terms of a picture in which a Bloch wall is regarded as being composed of a pair of smaller-angle Ising ones. A reduction by 40% in the parameters describing the gradient term in the GLD model brings it into better agreement with the first-principles results for detailed properties such as the energies and widths of the FDWs.

cond-mat.mtrl-sci↗
arXiv2012

Half-Heusler semiconductors as piezoelectrics

One of the central challenges in materials science is the design of functional and multifunctional materials, in which large responses are produced by applied fields and stresses. A rapidly developing paradigm for the rational design of such materials is based on the first-principles study of a large materials family, the perovskite oxides being the prototypical case. Specifically, first-principles calculations of structure and properties are used to explore the microscopic origins of the functional properties of interest and to search a large space of equilibrium and metastable phases to identify promising candidate systems. In this paper, we use a first-principles rational-design approach to demonstrate semiconducting half-Heusler compounds as a previously-unrecognized class of piezoelectric materials, and to provide guidance for the experimental realization and further investigation of high-performance materials suitable for practical applications.

cond-mat.mtrl-sci↗
arXiv2012

Hexagonal $ABC$ as semiconducting ferroelectrics

We use a first-principles rational-design approach to identify a previously-unrecognized class of ferroelectric materials in the $P63mc$ LiGaGe structure type. We calculate structural parameters, polarization and ferroelectric well depths both for reported and as-yet hypothetical representatives of this class. Our results provide guidance for the experimental realization and further investigation of high-performance materials suitable for practical applications.

cond-mat.mtrl-sci↗