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Dawn T. H. Tan

Publications and source records attributed to Dawn T. H. Tan.

11 recordsLinked to original sources
arXiv2026

Exponential speedup of polarization stabilization for long distance DWDM quantum networks

Fibre-based quantum networks distributing polarization entanglement require a stable and uninterrupted transmission basis for reliable operation. Bright classical reference light enables rapid polarization feedback but can introduce noise into quantum channels. Entangled-photon-based feedback avoids this noise, but typically interrupts the target entanglement channel during calibration and becomes prohibitively slow over long distances due to the product loss of fibre links. Here, we overcome both limitations by combining wavelength-bracketed probing with switch-enabled path decomposition. Spectrally adjacent entangled-photon sidebands track the polarization response of the central distribution channel without interrupting its transmission, while optical switches and local reference fibres independently determine the signal and idler network transformations. Transferring the resulting compensation settings to the central channel eliminates calibration-induced downtime and changes the acquisition-time scaling from the product of the link losses to the sum of losses. We demonstrate the method on a 133 km fibre testbed and achieve continuous closed-loop stabilization for more than 24 hours without classical reference light. The decomposition of multi-link quantum feedback into single-link measurements provides a scalable stabilization strategy for wavelength-multiplexed quantum networks.

quant-ph↗
arXiv2026

Entanglement distribution over 155 km metropolitan fiber using a CMOS-compatible silicon chip

Transmitting entangled states over long distances is crucial for developing quantum networks. Previous demonstrations using satellites or fibers relied on photon pairs generated from bulk crystal arrangements. Polarization entanglement distribution based on CMOS-compatible silicon chips has long been restricted to lab-scale demonstrations spanning only a few meters, due to the difficulty of achieving sufficient off-chip brightness. We report a silicon chip platform that provides an off-chip entangled photon pair brightness ranging from 8,000 to 460,000 pairs per second, exceeding previous reports by three orders of magnitude. The entanglement fidelity reaches 99.85(6)% and 97.90(3)%, respectively. After addressing key challenges in long distance entanglement distribution over deployed fiber, including phase drift and chromatic dispersion, entangled photons were successfully distributed over 155 km (66 dB loss). These results demonstrate that CMOS-compatible silicon chips can perform competitively with bulk crystal sources and represent an important step toward scalable, chip-based quantum networks.

quant-ph↗
arXiv2024

Leveraging reconfigurable micro-resonator soliton crystals for Intensity-Modulated Direct Detection Data Transmission

The perennial demand for highly efficient short-haul communications is evidenced by a sustained explosion of growth in data center infrastructure that is predicted to continue for the foreseeable future. In these relatively compact networks, cost-sensitivity is of particular importance, which limits options to direct detection schemes that are more cost efficient than their coherent counterparts. Since their initial demonstration, multi-soliton states in optical microresonators have been observed to manifest in self-organised ensembles where soliton pulses are equally spaced around the resonators. In the spectral domain, these states, dubbed soliton crystals (SCs), result in significant enhancements to individual comb lines depending on the crystal state, making them well suited towards intensity-modulated direct detection (IMDD) schemes. In this work, we experimentally demonstrate adiabatic, deterministic access to lower-order soliton crystal states using an auxiliary-assisted cavity pumping method, attaining up to 19.6 dB enhancement of the comb lines in the 7-SC configuration compared to the single-soliton state. Seven comb lines of each 46 Gbaud/s pulse amplitude modulation 4 (PAM4) is transmitted over 4km of fiber in comb lines across the C-band with bit-error-rates (BER) as low as 5E-5. Our demonstration shows the promising way of using soliton crystal states as future integrated sources for highly stable Terabaud/s datacenter communications.

physics.optics↗
arXiv2024

Demonstration of a low loss, highly stable and re-useable edge coupler for high heralding efficiency and low g^(2) (0) SOI correlated photon pair sources

We report a stable, low loss method for coupling light from silicon-on-insulator (SOI) photonic chips into optical fibers. The technique is realized using an on-chip tapered waveguide and a cleaved small core optical fiber. The on-chip taper is monolithic and does not require a patterned cladding, thus simplifying the chip fabrication process. The optical fiber segment is composed of a centimeter-long small core fiber (UHNA7) which is spliced to SMF-28 fiber with less than -0.1 dB loss. We observe an overall coupling loss of -0.64 dB with this design. The chip edge and fiber tip can be butt coupled without damaging the on-chip taper or fiber. Friction between the surfaces maintains alignment leading to an observation of +-0.1 dB coupling fluctuation during a ten-day continuous measurement without use of any adhesive. This technique minimizes the potential for generating Raman noise in the fiber, and has good stability compared to coupling strategies based on longer UHNA fibers or fragile lensed fibers. We also applied the edge coupler on a correlated photon pair source and observed a raw coincidence count rate of 1.21 million cps and raw heralding efficiency of 21.3%. We achieved an auto correlation function g^(2) (0) as low as 0.0004 at the low pump power regime.

physics.optics↗
arXiv2022

Optical characterization of deuterated silicon-rich nitride waveguides

Chemical vapor deposition-based growth techniques allow flexible design of CMOS-compatible materials. Here, we report the deuterated silicon-rich nitride films grown using plasma-enhanced chemical vapor deposition. The linear and nonlinear properties of the films are characterized. We compare the absorption at 1550nm wavelength region for films grown with $SiH_4$ and $SiD_4$, and experimentally confirm that the silicon-rich nitride films grown with $SiD_4$ eliminates Si-H related absorption. Waveguides fabricated on the films are further shown to possess a linear and nonlinear refractive index of 2.46 and $9.8$ X $10^{-18} m^2 W^{-1}$ respectively.

physics.optics↗
arXiv2021

Microresonator Frequency Comb Based High-Speed Transmission of Intensity Modulated Direct Detection Data

Globally, the long-haul transmission of ultra-high bandwidth data is enabled through coherent communications. Driven by the rapid pace of growth in interconnectivity over the last decade, long-haul data transmission has reached capacities on the order of tens to hundreds of terabits per second, over fiber reaches which may span thousands of kilometers. Data center communications however operate in a different regime, featuring shorter reaches and characterized as being more cost and power sensitive. While integrated microresonator frequency combs are poised to revolutionize light sources used for high-speed data transmission over fiber, their use has been limited to coherent detection schemes. In this paper, we demonstrate the use of microresonator frequency combs pumped with a single laser for the transmission of high-speed data, importantly using direct detection schemes. We achieve 120 Gb/s and 240 Gb/s aggregate data transmission for 30 Gb/s non-return-to-zero (NRZ) and 60 Gb/s pulse modulation amplitude 4 (PAM4) modulation formats respectively over 2 km of optical fiber, exceeding the reach, single lane data rate, and aggregate data rates specified in Parallel Single Mode 4 (PSM4) and Course Wavelength Division Multiplex 4 (CWDM4) multi-source agreements. Remarkably, we achieve an extremely low power penalty of 0.1 dB compared to back-to-back characterization. The results firmly cement CMOS-compatible micro-resonator frequency combs based high-speed data transmission as a viable technology for the cost and power sensitive data center transceiver industry.

physics.app-ph↗
arXiv2019

Bragg soliton compression and fission on a CMOS-compatible platform

Higher-order soliton dynamics, specifically soliton compression and fission, underpin crucial applications in ultrafast optics, sensing, communications, and signal processing. Bragg solitons exploit the strong dispersive properties of periodic media near the photonic band edge, enabling soliton dynamics to occur on chip-scale propagation distances and opening avenues to harness soliton compression and fission in integrated photonic platforms. However, implementation in CMOS-compatible platforms has been hindered by the strong nonlinear loss that dominates the propagation of high-intensity pulses in silicon and the low-optical nonlinearity of traditional silicon nitride. Here, we present CMOS-compatible, on-chip Bragg solitons, with the largest soliton-effect pulse compression to date with a factor of x5.7, along with the first time-resolved measurements of soliton fission on a CMOS-compatible platform. These observations were enabled by the combination of unique cladding-modulated Bragg grating design, the high nonlinearity and negligible nonlinear loss of compositionally engineered ultra-silicon-rich nitride (USRN: Si7N3).

physics.optics↗
arXiv2015

Highly Efficient Midinfrared On-Chip Electrical Generation of Graphene Plasmons by Inelastic Electron Tunneling Excitation

Inelastic electron tunneling provides a low-energy pathway for the excitation of surface plasmons and light emission. We theoretically investigate tunnel junctions based on metals and graphene. We show that graphene is potentially a highly efficient material for tunneling excitation of plasmons because of its narrow plasmon linewidths, strong emission, and large tunability in the midinfrared wavelength regime. Compared to gold and silver, the enhancement can be up to 10 times for similar wavelengths and up to 5 orders at their respective plasmon operating wavelengths. Tunneling excitation of graphene plasmons promises an efficient technology for on-chip electrical generation and manipulation of plasmons for graphene-based optoelectronics and nanophotonic integrated circuits.

cond-mat.mes-hall↗
arXiv2015

Efficiencies of Aloof-Scattered Electron Beam Excitation of Metal and Graphene Plasmons

We assessed the efficiencies of surface plasmon excitation by an aloof-scattered electron beam on metals and graphene. Graphene is shown to exhibit high energy transfer efficiencies at very low electron kinetic energy requirements. We show that the exceptional performance of graphene is due to its unique plasmon dispersion, low electronic density and thin-film structure. The potential applications of these aloof-scattered graphene plasmons are discussed in aspects of coherent radiation.

cond-mat.mes-hall↗
arXiv2014

Waveguide engineering of graphene's nonlinearity

Graphene has recently been shown to possess giant nonlinearity; however, the utility of this nonlinearity is limited due to high losses and small interaction volume. We show that by performing waveguide engineering to graphene's nonlinearity, we are able to dramatically increase the nonlinear parameter and decrease the switching optical power to sub-watt levels. Our design makes use of the hybrid plasmonic waveguide and careful manipulation of graphene's refractive index by tuning its Fermi level. The ability to tailor the nonlinear parameter in graphene based waveguides via the Fermi level provides a paradigm of nonlinear optics devices to be realized.

cond-mat.mes-hall↗