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arXiv · 2202.10023

Optical characterization of deuterated silicon-rich nitride waveguides

Xavier X. Chia·George F. R. Chen·Yanmei Cao·Peng Xing·Doris K. T. Ng·Dawn T. H. Tan
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Abstract

Chemical vapor deposition-based growth techniques allow flexible design of CMOS-compatible materials. Here, we report the deuterated silicon-rich nitride films grown using plasma-enhanced chemical vapor deposition. The linear and nonlinear properties of the films are characterized. We compare the absorption at 1550nm wavelength region for films grown with $SiH_4$ and $SiD_4$, and experimentally confirm that the silicon-rich nitride films grown with $SiD_4$ eliminates Si-H related absorption. Waveguides fabricated on the films are further shown to possess a linear and nonlinear refractive index of 2.46 and $9.8$ X $10^{-18} m^2 W^{-1}$ respectively.

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Xavier X. Chia, George F. R. Chen, Yanmei Cao, Peng Xing, Doris K. T. Ng, Dawn T. H. Tan. 2022-02-21. Optical characterization of deuterated silicon-rich nitride waveguides. https://arxiv.org/abs/2202.10023

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