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Delin Zhang

Publications and source records attributed to Delin Zhang.

29 records · Page 2Linked to original sources

Film strains enhance the reversible cycling of intercalation electrodes

A key cause of chemo-mechanical degradation in battery electrodes is that they undergo abrupt phase transformation during the charging/discharging cycle. This phase transformation is accompanied by lattice misfit strains that nucleate microcracks, induce fracture and, in extreme cases, amorphize the intercalation electrode. In this work, we propose a strategy to prevent the chemo-mechanical degradation of intercalation electrodes: we show that by engineering suitable film strains we can regulate the phase transformations in thin-film intercalation electrodes and circumvent the large volume changes. We test this strategy using a combination of theory and experiment: we first analytically derive the effect of film strain on the electrochemical response of a thin-film intercalation electrode and next apply our analytical model to a representative example (LixV2O5 with multiple phase transformations). We then test our theoretical predictions experimentally. Specifically, we electrochemically cycle thin-film V2O5 electrodes with different film strains and measure their structure, voltage, and stress responses. Our findings show that tensile film strains lower the voltage for phase transformations in thin-film V2O5 electrodes and facilitate their reversible cycling across a wider voltage window without chemo-mechanical degradation. These results suggest that film strain engineering is an alternative approach to preventing chemo-mechanical degradation in intercalation electrodes. Beyond thin-film electrodes, our findings from this study are applicable to the study of stress-induced phase transformations in particle-based electrodes and the thin surface layers forming on cathode particles.

cond-mat.mtrl-sci↗

Large field-like torque in amorphous Ru2Sn3 originated from the intrinsic spin Hall effect

We investigated temperature dependent current driven spin-orbit torques in magnetron sputtered Ru2Sn3 (4 and 10 nm) /Co20Fe60B20 (5 nm) layered structures with in-plane magnetic anisotropy. The room temperature damping-like and field-like spin torque efficiencies of the amorphous Ru2Sn3 films were measured to be 0.14 +- 0.008 (0.07 +- 0.012) and -0.03 +- 0.006 (-0.20 +- 0.009), for the 4 (10 nm) films respectively, by utilizing the second harmonic Hall technique. The large field-like torque in the relatively thicker Ru2Sn3 (10 nm) thin film is unique compared to the traditional spin Hall materials interfaced with thick magnetic layers with in-plane magnetic anisotropy which typically have dominant damping-like and negligible field-like torques. Additionally, the observed room temperature field-like torque efficiency in Ru2Sn3 (10 nm)/CoFeB (5 nm) is up to three times larger than the damping-like torque (-0.20 +- 0.009 and 0.07 +- 0.012, respectively) and thirty times larger at 50 K (-0.29 +- 0.014 and 0.009 +- 0.017, respectively). The temperature dependence of the field-like torques show dominant contributions from the intrinsic spin Hall effect while the damping-like torques show dominate contributions from the extrinsic spin Hall effects, skew scattering and side jump. Through macro-spin calculations, we found that including field-like torques on the order or larger than the damping-like torque can reduce the switching critical current and decrease magnetization procession for a perpendicular ferromagnetic layer.

cond-mat.mes-hall↗

Ultra-high frequency magnetic resonance through strain-spin coupling in perpendicular magnetic multi-layers

The interaction between strain and spin has received intensive attention in the scientific community due to its abundant physical phenomena and huge technological impact. Until now, there is no experimental report on ultra-high frequency magnetic resonance through the strain-spin coupling for any technologically relevant perpendicular magnetic material. Here we report the experimental detection of the acoustic strain waves that have a response time on the order of 10 picoseconds in perpendicular magnetic [Co/Pd]n multilayers via a femtosecond laser pulse excitation. Through direct measurements of acoustic strain waves, we observe an ultra-high frequency magnetic resonance up to 60 GHz in [Co/Pd]n multilayers. We further report a theoretical model of the strain-spin interaction. Our model reveals that the energy could be transferred efficiently from the strain to the spins and well explains the existence of a steady resonance state through exciting the spin system. The physical origins of the resonance between strain waves and magnetic precession and the requested conditions for obtaining magnetic resonance within thin magnetic films have also been discussed after thorough analysis. These combined results point out a potential pathway to enable an extremely high frequency (EHF) magnetic resonance through the strain-spin coupling.

cond-mat.mtrl-sci↗

Optimization of Time-Resolved Magneto-optical Kerr Effect Signals for Magnetization Dynamics Measurements

Recently magnetic storage and magnetic memory have shifted towards the use of magnetic thin films with perpendicular magnetic anisotropy (PMA). Understanding the magnetic damping in these materials is crucial, but normal Ferromagnetic Resonance (FMR) measurements face some limitations. The desire to quantify the damping in materials with PMA has resulted in the adoption of Time-Resolved Magneto-optical Kerr Effect (TR-MOKE) measurements. In this paper, we discuss the angle and field dependent signals in TR-MOKE, and utilize a numerical algorithm based on the Landau-Lifshitz-Gilbert (LLG) equation to provide information on the optimal conditions to run TR-MOKE measurements.

cond-mat.mes-hall↗

Low Gilbert Damping Constant in Perpendicularly Magnetized W/CoFeB/MgO Films with High Thermal Stability

Perpendicular magnetic materials with low damping constant and high thermal stability have great potential for realizing high-density, non-volatile, and low-power consumption spintronic devices, which can sustain operation reliability for high processing temperatures. In this work, we study the Gilbert damping constant (α) of perpendicularly magnetized W/CoFeB/MgO films with a high perpendicular magnetic anisotropy (PMA) and superb thermal stability. The α of these PMA films annealed at different temperatures is determined via an all-optical Time-Resolved Magneto-Optical Kerr Effect method. We find that α of these W/CoFeB/MgO PMA films decreases with increasing annealing temperature, reaches a minimum of α = 0.016 at an annealing temperature of 350 °C, and then increases to 0.024 after post-annealing at 400 °C. The minimum α observed at 350 °C is rationalized by two competing effects as the annealing temperature becomes higher: the enhanced crystallization of CoFeB and dead-layer growth occurring at the two interfaces of the CoFeB layer. We further demonstrate that α of the 400 °C-annealed W/CoFeB/MgO film is comparable to that of a reference Ta/CoFeB/MgO PMA film annealed at 300 °C, justifying the enhanced thermal stability of the W-seeded CoFeB films.

cond-mat.mes-hall↗

Room-temperature perpendicular magnetization switching through giant spin-orbit torque from sputtered BixSe(1-x) topological insulator material

The spin-orbit torque (SOT) arising from materials with large spin-orbit coupling promises a path for ultra-low power and fast magnetic-based storage and computational devices. We investigated the SOT from magnetron-sputtered BixSe(1-x) thin films in BixSe(1-x)/CoFeB heterostructures by using a dc planar Hall method. Remarkably, the spin Hall angle (SHA) was found to be as large as 18.83, which is the largest ever reported at room temperature (RT). Moreover, switching of a perpendicular CoFeB multilayer using SOT from the BixSe(1-x) has been observed with the lowest-ever switching current density reported in a bilayer system: 2.3 * 105 A/cm2 at RT. The giant SHA, smooth surface, ease of growth of the films on silicon substrate, successful growth and switching of a perpendicular CoFeB multilayer on BixSe(1-x) film opens a path for use of BixSe(1-x) topological insulator (TI) material as a spin-current generator in SOT-based memory and logic devices.

cond-mat.mes-hall↗

Unidirectional spin Hall magnetoresistance in topological insulator/ferromagnetic layer heterostructures

The large spin orbit coupling in topological insulators results in helical spin-textured Dirac surface states that are attractive for topological spintronics. These states generate an efficient spin-orbit torque on proximal magnetic moments at room temperature. However, memory or logic spin devices based upon such switching require a non-optimal three terminal geometry, with two terminals for the writing current and one for reading the state of the device. An alternative two terminal device geometry is now possible by exploiting the recent discovery of a unidirectional spin Hall magnetoresistance in heavy metal/ferromagnet bilayers and (at low temperature) in magnetically doped topological insulator heterostructures. We report the observation of unidirectional spin Hall magnetoresistance in a technologically relevant device geometry that combines a topological insulator with a conventional ferromagnetic metal. Our devices show a figure-of-merit (magnetoresistance per current density per total resistance) that is comparable to the highest reported values in all-metal Ta/Co bilayers.

cond-mat.mes-hall↗

Giant Voltage Manipulation of MgO-based Magnetic Tunnel Junctions via Localized Anisotropic Strain: a Potential Pathway to Ultra-Energy-Efficient Memory Technology

Strain-mediated voltage control of magnetization in piezoelectric/ferromagnetic systems is a promising mechanism to implement energy-efficient spintronic memory devices. Here, we demonstrate giant voltage manipulation of MgO magnetic tunnel junctions (MTJ) on a Pb(Mg1/3Nb2/3)0.7Ti0.3O3 (PMN-PT) piezoelectric substrate with (001) orientation. It is found that the magnetic easy axis, switching field, and the tunnel magnetoresistance (TMR) of the MTJ can be efficiently controlled by strain from the underlying piezoelectric layer upon the application of a gate voltage. Repeatable voltage controlled MTJ toggling between high/low-resistance states is demonstrated. More importantly, instead of relying on the intrinsic anisotropy of the piezoelectric substrate to generate the required strain, we utilize anisotropic strain produced using local gating scheme, which is scalable and amenable to practical memory applications. Additionally, the adoption of crystalline MgO-based MTJ on piezoelectric layer lends itself to high TMR in the strain-mediated MRAM devices.

cond-mat.mes-hall↗

First-principles study of the structural stability of Mn3Z (Z=Ga, Sn and Ge) Heusler compounds

We investigate the structural stability and magnetic properties of cubic, tetragonal and hexagonal phases of Mn3Z (Z=Ga, Sn and Ge) Heusler compounds using first-principles density-functional theory. We propose that the cubic phase plays an important role as an intermediate state in the phase transition from the hexagonal to the tetragonal phases. Consequently, Mn3Ga and Mn3Ge behave differently from Mn3Sn, because the relative energies of the cubic and hexagonal phases are different. This result agrees with experimental observations from these three compounds. The weak ferromagnetism of the hexagonal phase and the perpendicular magnetocrystalline anisotropy of the tetragonal phase obtained in our calculations are also consistent with experiment.

cond-mat.mtrl-sci↗

Topological surface states of Bi2Se3 with the coexistence of Se vacancies

Although topological surface states are known to be robust against non-magnetic surface perturbations, their band dispersions and spatial distributions are still sensitive to the surface defects. Take Bi2Se3 as an example, we demonstrated that Se vacancies modifies the surface band structures considerably. When large numbers of Se vacancies exist on the surface, topological surface states may sink down from the first to second quintuple layer and get separated from the vacancies. We simulated STM images to distinguish the surfaces with Se- and Bi-terminations.

cond-mat.mtrl-sci↗

Perpendicular magnetic anisotropy of full-Heusler films in Pt/Co2FeAl/MgO trilayers

We report on perpendicular magnetic anisotropy (PMA) in a Pt/Co2FeAl/MgO sandwiched structure with a thick Co2FeAl layer of 2-2.5 nm. The PMA is thermally stable that the anisotropy energy density Ku is 1.3{\times}106 erg/cm3 for the structure with 2 nm Co2FeAl after annealing at 350 oC. The thicknesses of Co2FeAl and MgO layers greatly affect the PMA. Our results provide an effective way to realize relative thick perpendicularly magnetized Heusler alloy films.

cond-mat.mtrl-sci↗