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arXiv · 1703.03822

Room-temperature perpendicular magnetization switching through giant spin-orbit torque from sputtered BixSe(1-x) topological insulator material

Mahendra DC·Mahdi Jamali·Jun-Yang Chen·Danielle Reifsnyder Hickey·Delin Zhang·Zhengyang Zhao·Hongshi Li·P. Quarterman·Yang Lv·Mo Li·K. Andre Mkhoyan·Jian-Ping Wang
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Abstract

The spin-orbit torque (SOT) arising from materials with large spin-orbit coupling promises a path for ultra-low power and fast magnetic-based storage and computational devices. We investigated the SOT from magnetron-sputtered BixSe(1-x) thin films in BixSe(1-x)/CoFeB heterostructures by using a dc planar Hall method. Remarkably, the spin Hall angle (SHA) was found to be as large as 18.83, which is the largest ever reported at room temperature (RT). Moreover, switching of a perpendicular CoFeB multilayer using SOT from the BixSe(1-x) has been observed with the lowest-ever switching current density reported in a bilayer system: 2.3 * 105 A/cm2 at RT. The giant SHA, smooth surface, ease of growth of the films on silicon substrate, successful growth and switching of a perpendicular CoFeB multilayer on BixSe(1-x) film opens a path for use of BixSe(1-x) topological insulator (TI) material as a spin-current generator in SOT-based memory and logic devices.

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Mahendra DC, Mahdi Jamali, Jun-Yang Chen, Danielle Reifsnyder Hickey, Delin Zhang, Zhengyang Zhao, Hongshi Li, P. Quarterman, Yang Lv, Mo Li, K. Andre Mkhoyan, Jian-Ping Wang. 2017-03-10. Room-temperature perpendicular magnetization switching through giant spin-orbit torque from sputtered BixSe(1-x) topological insulator material. https://doi.org/10.1038/s41563-018-0136-z

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