arXiv subjects

Delphine Marris-Morini

Publications and source records attributed to Delphine Marris-Morini.

At least 19 recordsLinked to original sources

arXiv2026

Boundary-dominated optomechanics in silicon metamaterial membranes

Stimulated Brillouin scattering in integrated photonic waveguides enables coherent coupling between optical photons and gigahertz acoustic phonons, providing a powerful mechanism for on-chip microwave photonics and opto-acoustic signal processing. Despite theoretical predictions of ultra-strong Brillouin interactions arising from enhanced light-sound coupling at device boundaries, most state-of-the-art integrated demonstrations remain governed by bulk photoelastic effects. This limitation stems from trade-offs between optical loss, interaction with waveguide boundaries and accessible phonon frequencies associated with the use of transverse-electric optical modes coupled to horizontally breathing mechanical modes. Here we demonstrate a new approach based on transverse-magnetic optical modes coupled to vertically breathing mechanical modes in suspended silicon membranes engineered with subwavelength metamaterial claddings. In this geometry, the interaction is dominated by the moving-boundary effect occurring at smooth top and bottom interfaces, while the phonon frequency is set primarily by the membrane thickness rather than its width. We observe forward Brillouin interactions at a record frequency of 12 GHz with a gain of 7200 W$^{-1}$ m$^{-1}$ and a mechanical quality factor of 620, yielding the highest Brillouin gain-to-quality-factor ratio reported in silicon waveguides. The devices exhibit net Brillouin amplification in millimeter-scale waveguides with pump powers below 15 mW, establishing a scalable platform for high-frequency integrated opto-acoustic signal processing.

physics.optics↗

arXiv2026

Germanium-Based Mid-Infrared Photonics

The mid-infrared (mid-IR) spectral range is a part of the electromagnetic spectrum in which most of the molecules have vibrational and rotational resonances. Ge-based photonic integrated circuits in this wavelength range have thus seen a burst of interest in the recent years, mainly driven by applications related with the detection of chemical and biological substances. Here we review the motivations and the recent developments in this field, from the different material platforms to active and nonlinear devices. We also discuss a few demonstrations of sensing that have already been conducted, attesting the potential applications of such devices. Finally, we conclude by discussing the challenges that have to be solved to transition from lab demonstrations to practical industrial devices.

physics.optics↗

arXiv2025

Roadmap: Emerging Platforms and Applications of Optical Frequency Combs and Dissipative Solitons

The discovery of optical frequency combs (OFCs) has revolutionised science and technology by bridging electronics and photonics, driving major advances in precision measurements, atomic clocks, spectroscopy, telecommunications, and astronomy. However, current OFC systems still require further development to enable broader adoption in fields such as communication, aerospace, defence, and healthcare. There is a growing need for compact, portable OFCs that deliver high output power, robust self-referencing, and application-specific spectral coverage. On the conceptual side, progress toward such systems is hindered by an incomplete understanding of the fundamental principles governing OFC generation in emerging devices and materials, as well as evolving insights into the interplay between soliton and mode-locking effects. This roadmap presents the vision of a diverse group of academic and industry researchers and educators from Europe, along with their collaborators, on the current status and future directions of OFC science. It highlights a multidisciplinary approach that integrates novel physics, engineering innovation, and advanced researcher training. Topics include advances in soliton science as it relates to OFCs, the extension of OFC spectra into the visible and mid-infrared ranges, metrology applications and noise performance of integrated OFC sources, new fibre-based OFC modules, OFC lasers and OFC applications in astronomy.

physics.optics↗

arXiv2025

On-chip pulse generation at 8 μm wavelength

The mid-infrared spectral region holds growing importance for applications such as gas sensing and spectroscopy. Although compact ultrashort pulse laser sources are essential to enable these applications, their realization in this spectral range remains an open challenge. We demonstrate an integrated approach to generate pulses in the mid-infrared based on chirped Bragg gratings engineered to compensate for the group delay dispersion of quantum cascade laser frequency comb sources. SiGe graded-index photonic circuits are used for operation around 8 μm wavelength. With this approach, pulses as short as 1.39 picoseconds were obtained, marking a key step towards fully integrated ultrashort pulse sources in the mid-infrared.

physics.optics↗

arXiv2024

Tunable on-chip electro-optic frequency-comb generation at 8 μm wavelength

Dual-comb spectroscopy is a powerful technique to measure optical spectra in a wide spectral range with high-frequency resolution. The development of compact systems operating in the long-wave infrared wavelength range is of high interest for spectroscopic and sensing applications. Amongst the different techniques to obtain optical frequency-combs, electro-optic frequency-comb generation presents major advantages thanks to the tunable repetition rate only limited by the bandwidth of the used electro-optical modulator. However, the development of integrated and efficient electro-optical modulators operating in a wide long-wave infrared spectral band is still at its infancy, and electro-optical frequency-comb has not been demonstrated so far beyond the telecom band. In this work, a Schottky-based modulator embedded in a Ge-rich graded SiGe waveguide is used for electro-optic frequency-comb generation. Considering the limited efficiency of the modulator, harmonically-rich RF signals are used to enhance the generation of comb lines around the optical carrier. Interestingly, this allows us to demonstrate the generation of electro-optical combs spanning over 2.4 GHz around 8 μm wavelength. This paves the way towards fully integrated and tunable mid-infrared electro-optic frequency-comb generation systems.

physics.optics↗

arXiv2023

Generation of electro-optic frequency combs with optimized flatness in a silicon ring resonator modulator

The flatness of electro-optic frequency combs (EOFCs) generated in a single silicon ring resonator modulator (RRM) is optimized by employing harmonic superposition of the radio-frequency driving signal. A differential evolution algorithm is employed in conjunction with a simplified model of the RRM for offline optimization of the amplitudes and phases of harmonic driving signals and the operating point of the RRM. The optimized driving signals are then applied to a silicon RRM. EOFCs containing 7 and 9 lines are synthesized with a power imbalance between the lines of 2.9 dB and 5.4 dB, respectively, compared to 9.4 dB for an optimized 5-line comb generated from a single sinusoidal driving signal.

physics.optics↗

arXiv2023

High speed silicon photonic electro-optic Kerr modulation

Electro-optic silicon-based modulators contribute to ease the integration of high-speed and low-power consumption circuits for classical optical communications or quantum computers. However, the inversion symmetry in the silicon crystal structure inhibits the use of Pockels effect. An electric field-induced optical modulation equivalent to a Pockels effect can nevertheless be achieved in silicon by the use of DC Kerr effect. Although some theoretical and experimental studies have shown its existence in silicon, the DC Kerr effect in optical modulation have led to a negligible contribution so far. This paper reports demonstration of high-speed optical modulation based on the electric field-induced linear electro-optic effect in silicon PIN junction waveguides. The relative contributions of both plasma dispersion and Kerr effects are quantified and we show that the Kerr induced modulation is dominant when a high external DC electric field is applied. Finally, the high-speed modulation response is analyzed and eye diagram up to 100 Gbits/s in NRZ format are obtained. This work demonstrates high speed modulation based on Kerr effect in silicon, and its potential for low loss, quasi-pure phase modulation.

physics.optics↗

arXiv2023

Genetic optimization of Brillouin scattering gain in subwavelength-structured silicon membrane waveguides

On-chip Brillouin optomechanics has great potential for applications in communications, sensing, and quantum technologies. Tight confinement of near-infrared photons and gigahertz phonons in integrated waveguides remains a key challenge to achieving strong on-chip Brillouin gain. Here, we propose a new strategy to harness Brillouin gain in silicon waveguides, based on the combination of genetic algorithm optimization and periodic subwavelength structuration to engineer photonic and phononic modes simultaneously. The proposed geometry is composed of a waveguide core and a lattice of anchoring arms with a subwavelength period requiring a single etch step. The waveguide geometry is optimized to maximize the Brillouin gain using a multi-physics genetic algorithm. Our simulation results predict a remarkable Brillouin gain exceeding 3300 1/(W m), for a mechanical frequency near 15 GHz.

physics.optics↗

arXiv2022

Spatial and polarization division multiplexing harnessing on-chip optical beam forming

On-chip spatial and polarization multiplexing have emerged as a powerful strategy to boost the bandwidth of integrated optical transceivers. State-of-the-art multiplexers require accurate control of the relative phase or the spatial distribution among different guided optical modes, seriously compromising the bandwidth and performance of the devices. To overcome this limitation, we propose a new approach based on the coupling between guided modes in integrated waveguides and optical beams free-propagating on the chip plane. The engineering of the evanescent coupling between the guided modes and free-propagating beams allows spatial and polarization multiplexing with state-of-the-art performance. To demonstrate the potential and versatility of this approach, we have developed a two-polarization multiplexed link and a three-mode multiplexed link using standard 220-nm-thick silicon-on-insulator technology. The two-polarization link shows a measured -35 dB crosstalk bandwidth of 180 nm, while the three-mode link exhibits a -20 dB crosstalk bandwidth of 195 nm. These bandwidths cover the S, C, L, and U communication bands. We used these links to demonstrate error-free transmission (bit-error-rate < 10-9) of two and three non-return-to-zero signals at 40 Gbps each, with power penalties below 0.08 dB and 1.5 dB for the two-polarization and three-mode links respectively. The approach demonstrated here for two polarizations and three modes is also applicable to future implementation of more complex multiplexing schemes.

physics.optics↗

arXiv2022

Low-Power consumption Franz-Keldysh effect plasmonic modulator

In this paper we report on a low energy consumption CMOS-compatible plasmonic modulator based on Franz-Keldysh effect in germanium on silicon. We performed integrated electro-optical simulations in order to optimize the main characteristics of the modulator. A 3.3 $dB$ extinction ratio for a 30 $μm$ long modulator is demonstrated under 3 $V$ bias voltage at an operation wavelength of 1647 $nm$. The estimated energy consumption is as low as 20 $fJ/bit$.

physics.optics↗

arXiv2022

Broadband behavior of quadratic metalenses with a wide field of view

Metalenses are attracting a large interest for the implementation of complex optical functionalities in planar and compact devices. However, chromatic and off-axis aberrations remain standing challenges. Here, we experimentally investigate the broadband behavior of metalenses based on quadratic phase profiles. We show that these metalenses do not only guarantee an arbitrarily large field of view but are also inherently tolerant to longitudinal and transverse chromatic aberrations. As such, we demonstrate a single-layer, silicon metalens with a field of view of 86° and a bandwidth up to 140 nm operating at both 1300 nm and 1550 nm telecommunication wavelength bands.

physics.optics↗

arXiv2021

Mid-infrared Fourier-transform spectrometer based on metamaterial lateral cladding suspended silicon waveguides

Integrated mid-infrared micro-spectrometers have a great potential for applications in environmental monitoring and space exploration. Silicon-on-insulator (SOI) is a promising platform to tackle this integration challenge, due to its unique capability for large volume and low-cost production of ultra-compact photonic circuits. However, the use of SOI in the mid-infrared is restricted by the strong absorption of the buried oxide layer for wavelengths beyond 4 μm. Here, we overcome this limitation by utilizing metamaterial-cladded suspended silicon waveguides to implement a spatial heterodyne Fourier-transform (SHFT) spectrometer operating near 5.5μm wavelength. The metamaterial-cladded geometry allows removal of the buried oxide layer, yielding measured propagation loss below 2 dB/cm between 5.3μm and 5.7μm wavelengths. The SHFT spectrometer comprises 19 Mach-Zehnder interferometers with a maximum arm length imbalance of 200 μm, achieving a measured spectral resolution of 13cm-1 and a free-spectral range of 100 cm-1 near 5.5μm wavelength.

physics.optics↗

arXiv2021

Generating 10-GHz phonons in nanostructured silicon membrane optomechanical cavity

Flexible control of photons and phonons in silicon nanophotonic waveguides is a key feature for emerging applications in communications, sensing and quantum technologies. Strong phonon leakage towards the silica under-cladding hampers optomechanical interactions in silicon-on-insulator. This limitation has been circumvented by totally or partially removing the silica under-cladding to form pedestal or silicon membrane waveguides. Remarkable optomechanical interactions have been demonstrated in silicon using pedestal strips, membrane ribs, and photonic/phononic crystal membrane waveguides. Still, the mechanical frequencies are limited to the 1-5 GHz range. Here, we exploit the periodic nanostructuration in Si membrane gratings to shape GHz phononic modes and near-infrared photonic modes, achieving ultrahigh mechanical frequency (10 GHz) and strong photon-phonon overlap (61.5%) simultaneously. Based on this concept, we experimentally demonstrate a one-dimension optomechanical micro-resonator with a high mechanical frequency of 10 GHz and a quality factor of 1000. These results were obtained at room temperature and ambient conditions with an intracavity optical power below 1 mW, illustrating the efficient optical driving of the mechanical mode enabled by the proposed approach.

physics.optics↗

arXiv2021

Silicon-on-insulator optomechanical microresonator with tight photon and phonon confinement

The implementation of optomechanical devices in silicon-on-insulator (SOI), the canonical silicon photonics technology is seriously hampered by the strong phonon leakage into the silica under-cladding. This limitation has been partially circumvented by total or partial removal of the silica under-cladding to form Si membranes or pedestal waveguides. However, this approach complicates integration with standard silicon optoelectronics circuitry, limiting the versatility and application of the strategy. Here, we propose and demonstrate a new strategy to confine photons and phonons in SOI without removing the silica under-cladding. Inspired by end-fire antenna arrays, we implement a periodic nanostructuration of silicon that simultaneously enables cancelling phonon leakage by destructive interference and guiding of photons by metamaterial index confinement. Based on this concept, we implement SOI optomechanical micro-resonators yielding remarkable optomechanical coupling (go=49 kHz) between 0.66 GHz mechanical modes and near-infrared optical modes. The mechanical mode exhibits a measured quality factor of Qm = 730, the largest reported for SOI optomechanical resonators, without silica removal. This value compares favorably with state-of-the-art Si membrane waveguides recently used to demonstrate remarkable Brillouin interactions in silicon (Qm ~ 700). These results open a new path for developing optomechanics in SOI without the need for silica removal, allowing seamless co-integration with current Si optoelectronics circuits, with a great potential for applications in communications, sensing, metrology, and quantum technologies.

physics.optics↗

arXiv2020

Stress measurements in silicon photonics by integrated Raman spectroscopy

Complex 3D integration of photonic and electronic integrated circuits is of particular interest to carry the photonics roadmap and to address challenges but involves mechanical stress, often detrimental for the behavior of optical components. Existing experiments failed to carefully analyze the stress in such integrated optical devices due to the requirement in terms of feature sizes, few hundreds of nanometers, and 3D-stacked integration. We present for the first time the characterization of the stress tensor of a silicon waveguide using Integrated Raman Spectroscopy (IRS). This experimental technique is directly sensitive to the effective stress, which involves changes in optical properties of the guided mode, at the working wavelength and polarization state of the photonic component. The experimental stress tensor is in good agreement with simulations.

physics.app-ph↗

arXiv2019

Optical modulation in Ge-rich SiGe waveguides in the mid-IR wavelength range up to 11 um

Waveguide integrated optical modulators in the mid-infrared (mid-IR) wavelength range are of significant interest for molecular spectroscopy in one hand, as on-chip synchronous detection can improve the performance of detection systems, and for free-space communications on the other hand, where optical modulators working in the atmospheric transparency windows are crucially missing. Here we report for the first time the demonstration of optical modulation in mid-IR photonic circuit reaching wavelengths larger than 8 um. Moreover, optical modulation in an unprecedented wavelength range, from 5.5 to 11 um wavelength is shown, relying on a broadband Ge-rich graded-SiGe platform. This first demonstration is used as a proof of concept, to experimentally confirm the free-carrier absorption effect modeling. These results pave the way towards efficient high-performance electrically-driven integrated optical modulators in the mid-IR wavelength range.

physics.optics↗

arXiv2018

Generating Fano Resonances in a single-waveguide nanobeam cavity for efficient electro-optical modulation

We propose a method for generating Fano resonance in a standalone silicon nanobeam cavity which eliminates the inconvenience from the unexpected side-coupled bus waveguide and unlocks new opportunities to develop ultra-compact and ultra-fast electro-optical modulators.. Taking advantage from a spatial-division multiplexing principle of operation between transverse electric modes, a sharp resonant mode and an efficient flat background mode are simultaneously generated in the same silicon channel for the realization of efficient Fano resonances. Unambiguous asymmetric spectrum lineshapes are thoroughly investigated using numerical and analytical methods and experimentally demonstrated in the near infra-red around lambda=1.55μm, presenting an extinction ratio of about 17dB for a delta lambda =56 pm wavelength detuning for the 1st cavity mode (Q-factor Q=34000), and higher than 23 dB extinction ratio for a delta lambda=366 pm detuning for the 2nd cavity mode (Q=5600). These extinction ratios are 10~15 dB larger than their Lorentzian counterparts exhibiting similar Q factors. Silicon Fano modulation based on plasma dispersion effect is proposed, for which an energy consumption as low as few fJ/bit is estimated. Fano cavity scheme addressed in this paper presents a great potential for low power consumption silicon optical modulators and provides anew insight to the advantages of Fano resonances for optical modulation schemes.

physics.optics↗

arXiv2018

Polarization and wavelength agnostic nanophotonic beam splitter

High-performance optical beam splitters are of fundamental importance for the development of advanced silicon photonics integrated circuits. However, due to the high refractive index contrast of the silicon-on-insulator platform, state of the art Si splitters are hampered by trade-offs in bandwidth, polarization dependence and sensitivity to fabrication errors. Here, we present a new strategy that exploits modal engineering in slotted waveguides to overcome these limitations, enabling ultra-wideband polarization-insensitive optical power splitters, with relaxed fabrication tolerances. The proposed splitter relies on a single-mode slot waveguide which is transformed into two strip waveguides by a symmetric taper, yielding equal power splitting. Based on this concept, we experimentally demonstrate -3$\pm$0.5 dB polarization-independent transmission in an unprecedented 390 nm bandwidth (1260 - 1650 nm), even in the presence of waveguide width deviations as large as $\pm$25 nm.

physics.app-ph↗