Low-Power consumption Franz-Keldysh effect plasmonic modulator

Nicolás Abadía; Thomas Bernadin; Papichaya Chaisakul; Ségolene Olivier; Delphine Marris-Morini; Roch Espiau de Lamaëstre; Jean-Claude Weeber; Laurent Vivien

doi:10.1364/oe.22.011236

arXiv · 2207.10084

Low-Power consumption Franz-Keldysh effect plasmonic modulator

Nicolás Abadía·Thomas Bernadin·Papichaya Chaisakul·Ségolene Olivier·Delphine Marris-Morini·Roch Espiau de Lamaëstre·Jean-Claude Weeber·Laurent Vivien

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Abstract

In this paper we report on a low energy consumption CMOS-compatible plasmonic modulator based on Franz-Keldysh effect in germanium on silicon. We performed integrated electro-optical simulations in order to optimize the main characteristics of the modulator. A 3.3 $dB$ extinction ratio for a 30 ${\mu}m$ long modulator is demonstrated under 3 $V$ bias voltage at an operation wavelength of 1647 $nm$. The estimated energy consumption is as low as 20 $fJ/bit$.

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Nicolás Abadía, Thomas Bernadin, Papichaya Chaisakul, Ségolene Olivier, Delphine Marris-Morini, Roch Espiau de Lamaëstre, Jean-Claude Weeber, Laurent Vivien. 2022-07-20. Low-Power consumption Franz-Keldysh effect plasmonic modulator. https://doi.org/10.1364/oe.22.011236

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