arXiv subjects

Dmitry Smirnov

Publications and source records attributed to Dmitry Smirnov.

At least 37 records · Page 2Linked to original sources

arXiv2023

$g$-factor engineering with InAsSb alloys toward zero band gap limit

Band gap is known as an effective parameter for tuning the Lande $g$-factor in semiconductors and can be manipulated in a wide range through the bowing effect in ternary alloys. In this work, using the recently developed virtual substrate technique, high-quality InAsSb alloys throughout the whole Sb composition range are fabricated and a large $g$-factor of $g\approx -90$ at the minimum band gap of $\sim 0.1$ eV, which is almost twice that in bulk InSb is found. Further analysis to the zero gap limit reveals a possible gigantic $g$-factor of $g\approx -200$ with a peculiar relativistic Zeeman effect that disperses as the square root of magnetic field. Such a $g$-factor enhancement toward the narrow gap limit cannot be quantitatively described by the conventional Roth formula, as the orbital interaction effect between the nearly triply degenerated bands becomes the dominant source for the Zeeman splitting. These results may provide new insights into realizing large $g$-factors and spin polarized states in semiconductors and topological materials.

cond-mat.mtrl-sci↗

arXiv2023

Revealing temperature evolution of the Dirac band in ZrTe$_5$ via magneto-infrared spectroscopy

We report the temperature evolution of the Dirac band in semiconducting zirconium pentatelluride (ZrTe$_5$) using magneto-infrared spectroscopy. We find that the band gap is temperature independent at low temperatures and increases with temperature at elevated temperatures. Although such an observation seems to support a weak topological insulator phase at all temperatures and defy the previously reported topological phase transition (TPT) at an intermediate temperature in ZrTe$_5$, we show that it is also possible to explain the observation by considering the effect of conduction-valence band mixing and band inversion with a strong topological insulator phase at low temperatures. Our work provides an alternative picture of the band gap evolution across TPT.

cond-mat.mtrl-sci↗

arXiv2023

Disorder-enriched magnetic excitations in the Kitaev quantum spin liquid candidate Na$_2$Co$_2$TeO$_6$

Using optical magneto-spectroscopy, we investigate the magnetic excitations of Na$_2$Co$_2$TeO$_6$ in a broad magnetic field range ($0\ \rm{T}\leq B\leq 17.5\ \rm{T}$) at low temperature. Our measurements reveal rich spectra of in-plane magnetic excitations with a surprisingly large number of modes, even in the high-field spin-polarized state. Theoretical calculations find that the Na-occupation disorder in \NCTO plays a crucial role in generating these modes. Our work demonstrates the necessity to consider disorder in the spin environment in the search for Kitaev quantum spin liquid states in practicable materials.

cond-mat.str-el↗

arXiv2022

Thickness and twist angle dependent interlayer excitons in metal monochalcogenide heterostructures

Interlayer excitons, or bound electron-hole pairs whose constituent quasiparticles are located in distinct stacked semiconducting layers, are being intensively studied in heterobilayers of two dimensional semiconductors. They owe their existence to an intrinsic type-II band alignment between both layers that convert these into p-n junctions. Here, we unveil a pronounced interlayer exciton (IX) in heterobilayers of metal monochalcogenides, namely gamma-InSe on epsilon-GaSe, whose pronounced emission is adjustable just by varying their thicknesses given their number of layers dependent direct bandgaps. Time-dependent photoluminescense spectroscopy unveils considerably longer interlayer exciton lifetimes with respect to intralayer ones, thus confirming their nature. The linear Stark effect yields a bound electron-hole pair whose separation d is just (3.6 \pm 0.1) Å with d being very close to dSe = 3.4 Å which is the calculated interfacial Se separation. The envelope of IX is twist angle dependent and describable by superimposed emissions that are nearly equally spaced in energy, as if quantized due to localization induced by the small moiré periodicity. These heterostacks are characterized by extremely flat interfacial valence bands making them prime candidates for the observation of magnetism or other correlated electronic phases upon carrier doping.

cond-mat.mes-hall↗

arXiv2022

Light sources with bias tunable spectrum based on van der Waals interface transistors

Light-emitting electronic devices are ubiquitous in key areas of current technology, such as data communications, solid-state lighting, displays, and optical interconnects. Controlling the spectrum of the emitted light electrically, by simply acting on the device bias conditions, is an important goal with potential technological repercussions. However, identifying a material platform enabling broad electrical tuning of the spectrum of electroluminescent devices remains challenging. Here, we propose light-emitting field-effect transistors based on van der Waals interfaces of atomically thin semiconductors as a promising class of devices to achieve this goal. We demonstrate that large spectral changes in room-temperature electroluminescence can be controlled both at the device assembly stage -- by suitably selecting the material forming the interfaces -- and on-chip, by changing the bias to modify the device operation point. Even though the precise relation between device bias and kinetics of the radiative transitions remains to be understood, our experiments show that the physical mechanism responsible for light emission is robust, making these devices compatible with simple large areas device production methods.

cond-mat.mes-hall↗

arXiv2022

Giant $g$-factors and fully spin-polarized states in metamorphic short-period InAsSb/InSb superlattices

Realizing a large Landé $g$-factor of electrons in solid-state materials has long been thought of as a rewarding task as it can trigger abundant immediate applications in spintronics and quantum computing. Here, by using metamorphic InAsSb/InSb superlattices (SLs), we demonstrate an unprecedented high value of $g\approx 104$, twice larger than that in bulk InSb, and fully spin-polarized states at low magnetic fields. In addition, we show that the $g$-factor can be tuned on demand from 20 to 110 via varying the SL period. The key ingredients of such a wide tunability are the wavefunction mixing and overlap between the electron and hole states, which have drawn little attention in prior studies. Our work not only establishes metamorphic InAsSb/InSb as a promising and competitive material platform for future quantum devices but also provides a new route toward $g$-factor engineering in semiconductor structures.

cond-mat.mes-hall↗

arXiv2022

Tuning Spin Transport in a Graphene Antiferromagnetic Insulator

Long-distance spin transport through anti-ferromagnetic insulators (AFMIs) is a long-standing goal of spintronics research. Unlike conventional spintronics systems, monolayer graphene in quantum Hall regime (QH) offers an unprecedented tuneability of spin-polarization and charge carrier density in QH edge states. Here, using gate-controlled QH edges as spin-dependent injectors and detectors in an all-graphene electrical circuit, for the first time we demonstrate a selective tuning of ambipolar spin transport through graphene $ν$=0 AFMIs. By modulating polarities of the excitation bias, magnetic fields, and charge carriers that host opposite chiralities, we show that the difference between spin chemical potentials of adjacent edge channels in the spin-injector region is crucial in tuning spin-transport observed across graphene AFMI. We demonstrate that non-local response vanishes upon reversing directions of the co-propagating edge channels when the spin-filters in our devices are no longer selective for a particular spin-polarization. Our results establish a versatile set of methods to tune pure spin transport via an anti-ferromagnetic media and open a pathway to explore their applications for a broad field of antiferromagnetic spintronics research.

cond-mat.mes-hall↗

arXiv2021

Correlations in the Electronic Structure of van der Waals NiPS$_3$ Crystals: An X-Ray Absorption and Resonant Photoelectron Spectroscopy Study

The electronic structure of high-quality van der Waals NiPS$_3$ crystals was studied using near-edge x-ray absorption spectroscopy (NEXAFS) and resonant photoelectron spectroscopy (ResPES) in combination with density functional theory (DFT) approach. The experimental spectroscopic methods, being element specific, allow to discriminate between atomic contributions in the valence and conduction band density of states and give direct comparison with the results of DFT calculations. Analysis of the NEXAFS and ResPES data allows to identify the NiPS$_3$ material as a charge-transfer insulator. Obtained spectroscopic and theoretical data are very important for the consideration of possible correlated-electron phenomena in such transition-metal layered materials, where the interplay between different degrees of freedom for electrons defines their electronic properties, allowing to understand their optical and transport properties and to propose further possible applications in electronics, spintronics and catalysis.

cond-mat.mtrl-sci↗

arXiv2021

Topological Quasi-2D Semimetal Co$_3$Sn$_2$S$_2$: Insights To Electronic Structure From NEXAFS and Resonant Photoelectron Spectroscopy

The electronic structure of the natural topological semimetal Co$_3$Sn$_2$S$_2$ crystals was studied using near-edge x-ray absorption spectroscopy (NEXAFS) and resonant photoelectron spectroscopy (ResPES). Although, the significant increase of the Co\,$3d$ valence band emission is observed at the Co\,$2p$ absorption edge in the ResPES experiments, the spectral weight at these photon energies is dominated by the normal Auger contribution. This observation indicates the delocalised character of photoexcited Co\,$3d$ electrons and is supported by the first-principle calculations. Our results on the investigations of the element- and orbital-specific electronic states near the Fermi level of Co$_3$Sn$_2$S$_2$ are of importance for the comprehensive description of the electronic structure of this materials, which is significant for future applications of this material in different areas of science and technology, including catalysis and water splitting applications.

cond-mat.mtrl-sci↗

arXiv2021

Weyl Fermion Magneto-Electrodynamics and Ultra-low Field Quantum Limit in TaAs

Topological semimetals are predicted to exhibit unconventional electrodynamics, but a central experimental challenge is singling out the contributions from the topological bands. TaAs is the prototypical example, where 24 Weyl points and 8 trivial Fermi surfaces make the interpretation of any experiment in terms of band topology ambiguous. We report magneto-infrared reflection spectroscopy measurements on TaAs. We observed sharp inter-Landau level transitions from a single pocket of Weyl Fermions in magnetic fields as low as 0.4 tesla. We determine the W2 Weyl point to be 8.3 meV below the Fermi energy, corresponding to a quantum limit - the field required to reach the lowest LL - of 0.8 Tesla - unprecedentedly low for Weyl Fermions. LL spectroscopy allows us to isolate these Weyl Fermions from all other carriers in TaAs and our result provides a new way for directly exploring the more exotic quantum phenomena in Weyl semimetals, such as the chiral anomaly.

cond-mat.str-el↗

arXiv2021

Magneto-transport evidence for strong topological insulator phase in ZrTe5

The identification of a non-trivial band topology usually relies on directly probing the protected surface/edge states. But, it is difficult to achieve electronically in narrow-gap topological materials due to the small (meV) energy scales. Here, we demonstrate that band inversion, a crucial ingredient of the non-trivial band topology, can serve as an alternative, experimentally accessible indicator. We show that an inverted band can lead to a four-fold splitting of the non-zero Landau levels, contrasting the two-fold splitting (spin splitting only) in the normal band. We confirm our predictions in magneto-transport experiments on a narrow-gap strong topological insulator, zirconium pentatelluride (ZrTe$_5$), with the observation of additional splittings in the quantum oscillations and also an anomalous peak in the extreme quantum limit. Our work establishes an effective strategy for identifying the band inversion as well as the associated topological phases for future topological materials research.

cond-mat.mtrl-sci↗

arXiv2021

Landau quantization in tilted Weyl semimetals with broken symmetry

Broken symmetry and tilting effects are ubiquitous in Weyl semimetals (WSMs). Therefore, it is crucial to understand their impacts on the materials' electronic and optical properties. Here, using a realistic four-band model for WSMs that incorporates both the symmetry breaking and tilting effects, we study its Landau quantization and the associated magneto-absorption spectrum. We show that the Landau levels in tilted Weyl bands can be obtained by considering a non-tilt Hamiltonian through Lorentz boost. However, broken symmetry effects can generate an additional term in the Hamiltonian, which equivalently leads to band reconstruction. Our work provides a more realistic view of the magnetic field response of WSMs that shall be taken into account in relevant future device applications.

cond-mat.mtrl-sci↗

arXiv2020

The Magnetoelastic Distortion of Multiferroic BiFeO$_3$ in the Canted Antiferromagnetic State

Using THz spectroscopy, we show that the spin-wave spectrum of multiferroic BiFeO$_3$ in its high-field canted antiferromagnetic state is well described by a spin model that violates rhombohedral symmetry. We demonstrate that the monoclinic distortion of the canted antiferromagnetic state is induced by the single-ion magnetoelastic coupling between the lattice and the two nearly anti-parallel spins. The revised spin model for BiFeO$_3$ contains two new single-ion anisotropy terms that violate rhombohedral symmetry and depend on the direction of the magnetic field.

cond-mat.str-el↗

arXiv2020

Electrically controlled emission from singlet and triplet exciton species in atomically thin light emitting diodes

Excitons are composite bosons that can feature spin singlet and triplet states. In usual semiconductors, without an additional spin-flip mechanism, triplet excitons are extremely inefficient optical emitters. Transition metal dichalcogenides (TMDs), with their large spin-orbit coupling, have been of special interest for valleytronic applications for their coupling of circularly polarized light to excitons with selective valley and spin$^{1-4}$. In atomically thin MoSe$_2$/WSe$_2$ TMD van der Waals (vdW) heterostructures, the unique atomic registry of vdW layers provides a quasi-angular momentum to interlayer excitons$^{5,6}$, enabling emission from otherwise dark spin triplet excitons. Here, we report electrically tunable spin singlet and triplet exciton emission from atomically aligned TMD heterostructures. We confirm the spin configurations of the light-emitting excitons employing magnetic fields to measure effective exciton g-factors. The interlayer tunneling current across the TMD vdW heterostructure enables the electrical generation of singlet and triplet exciton emission in this atomically thin PN junction. We demonstrate electrically tunability between the singlet and triplet excitons that are generated by charge injection. Atomically thin TMD heterostructure light emitting diodes thus enables a route for optoelectronic devices that can configure spin and valley quantum states independently by controlling the atomic stacking registry.

cond-mat.mes-hall↗

arXiv2020

Symmetry-resolved two-magnon excitations in a strong spin-orbit-coupled bilayer antiferromagnet

We used a combination of polarized Raman spectroscopy and spin wave calculations to study magnetic excitations in the strong spin-orbit-coupled (SOC) bilayer perovskite antiferromagnet $Sr_3Ir_2O_7$. We observed two broad Raman features at ~ 800 $cm^{-1}$ and ~ 1400 $cm^{-1}$ arising from magnetic excitations. Unconventionally, the ~ 800 $cm^{-1}$ feature is fully symmetric ($A_{1g}$) with respect to the underlying tetragonal ($D_{4h}$) crystal lattice which, together with its broad line shape, definitively rules out the possibility of a single magnon excitation as its origin. In contrast, the ~ 1400 $cm^{-1}$ feature shows up in both the $A_{1g}$ and $B_{2g}$ channels. From spin wave and two-magnon scattering cross-section calculations of a tetragonal bilayer antiferromagnet, we identified the ~ 800 $cm^{-1}$ (~ 1400 $cm^{-1}$) feature as two-magnon excitations with pairs of magnons from the zone-center $Γ$ point (zone-boundary van Hove singularity X point). We further found that this zone-center two-magnon scattering is unique to bilayer perovskite magnets which host an optical branch in addition to the acoustic branch, as compared to their single layer counterparts. This zone-center two-magnon mode is distinct in symmetry from the time-reversal symmetry broken spin wave gap and phase mode proposed to explain the ~ 92 meV (742 $cm^{-1}$) gap in RIXS magnetic excitation spectra of $Sr_3Ir_2O_7$.

cond-mat.str-el↗

arXiv2020

Helical Edge States and Quantum Phase Transitions in Tetralayer Graphene

Helical conductors with spin-momentum locking are promising platforms for Majorana fermions. Here we report observation of two topologically distinct phases supporting helical edge states in charge neutral Bernal-stacked tetralayer graphene in Hall bar and Corbino geometries. As the magnetic field B and out-of-plane displacement field D are varied, we observe a phase diagram consisting of an insulating phase and two metallic phases, with 0, 1 and 2 helical edge states, respectively. These phases are accounted for by a theoretical model that relates their conductance to spin-polarization plateaus. Transitions between them arise from a competition among inter-layer hopping, electrostatic and exchange interaction energies. Our work highlights the complex competing symmetries and the rich quantum phases in few-layer graphene.

cond-mat.mes-hall↗

arXiv2020

Electron-Hole Asymmetry of Surface States in Topological Insulator Sb2Te3 Thin Films Revealed by Magneto-Infrared Spectroscopy

When surface states (SSs) form in topological insulators (TIs), they inherit the properties of bulk bands, including the electron-hole (e-h) asymmetry but with much more profound impacts. Here, via combining magneto-infrared spectroscopy with theoretical analysis, we show that e-h asymmetry significantly modifies the SS electronic structures when interplaying with the quantum confinement effect. Compared to the case without e-h asymmetry, the SSs now bear not only a band asymmetry as that in the bulk but also a shift of the Dirac point relative to the bulk bands and a reduction of the hybridization gap up to 70%. Our results signify the importance of e-h asymmetry in band engineering of TIs in the thin film limit.

cond-mat.mtrl-sci↗

arXiv2020

Spin-Induced Linear Polarization of Excitonic Emission in Antiferromagnetic van der Waals Crystals

Antiferromagnets display enormous potential in spintronics owing to its intrinsic nature, including terahertz resonance, multilevel states, and absence of stray fields. Combining with the layered nature, van der Waals (vdW) antiferromagnets hold the promise in providing new insights and new designs in two-dimensional (2D) spintronics. The zero net magnetic moments of vdW antiferromagnets strengthens the spin stability, however, impedes the correlation between spin and other excitation elements, like excitons. Such coupling is urgently anticipated for fundamental magneto-optical studies and potential opto-spintronic devices. Here, we report an ultra-sharp excitonic emission with excellent monochromaticity in antiferromagnetic nickel phosphorus trisulfides (NiPS3) from bulk to atomically thin flakes. We prove that the linear polarization of the excitonic luminescence is perpendicular to the ordered spin orientation in NiPS3. By applying an in-plane magnetic field to alter the spin orientation, we further manipulate the excitonic emission polarization. Such strong correlation between exciton and spins provides new insights for the study of magneto-optics in 2D materials, and hence opens a path for developing opto-spintronic devices and antiferromagnet-based quantum information technologies.

cond-mat.mes-hall↗