arXiv subjects

Domenico De Fazio

Publications and source records attributed to Domenico De Fazio.

18 recordsLinked to original sources

arXiv2026

Highly Efficient Exciton Modulation in MoSe$_2$/PdSe$_2$ Heterostructures

Controlling exciton recombination in atomically thin semiconductors is central to their optoelectronic functionality, as the competition between radiative and non-radiative decay channels governs emission efficiency. Existing approaches, such as defect passivation, chemical doping, dielectric engineering, and strain tuning, primarily aim to suppress non-radiative losses. Here, we report a pronounced $\sim$6-fold enhancement of room-temperature A-exciton emission in a type-I MoSe$_2$/PdSe$_2$ van der Waals heterostructure, yielding a photoluminescence quantum yield of 6 %, compared to $\sim$1 % for as-exfoliated monolayer MoSe$_2$. This enhancement is accompanied by strong quenching of the B-exciton, consistent with interlayer electronic coupling that redistributes exciton populations toward the radiative A-exciton channel. Power- and temperature-dependent measurements reveal a suppression of exciton-exciton annihilation and a crossover to quenched emission at low temperature, indicating a redistribution of exciton relaxation pathways. Photoluminescence excitation spectroscopy further reveals a broadband enhancement spanning 450-725 nm, ruling out a resonance-specific mechanism. These results demonstrate that interlayer electronic coupling can be used as an efficient means to redirect exciton populations toward radiative channels, enhancing emission efficiency in two-dimensional semiconductors without chemical modification or strain.

cond-mat.mes-hall↗

arXiv2026

Enhanced Terahertz Photoresponse via Acoustic Plasmon Cavity Resonances in Scalable Graphene

Precise control and nanoscale confinement of terahertz (THz) fields are essential requirements for emerging applications in photonics, quantum technologies, wireless communications, and sensing. Here, we demonstrate a polaritonic cavity enhanced THz photoresponse in an antenna coupled device based on chemical vapor deposited (CVD) monolayer graphene. The dipole antenna lobes simultaneously serve as two gate electrodes, concentrate the impinging THz field, and efficiently launch acoustic graphene plasmons (AGPs), which drive a strong photo-thermoelectric (PTE) signal. Between 6 and 90 K, the photovoltage exhibits pronounced peaks, modulating the PTE response by up to 40\%, that we attribute to AGPs forming a Fabry Pérot THz cavity in the full or half graphene channel. Combined full wave and transport thermal simulations accurately reproduce the gate controlled plasmon wavelength, spatial absorption profile, and the resulting nonuniform electron heating responsible for the PTE response. The lateral and vertical maximum confinement factors of the AGP wavelength relative to the incident wavelength are 165 and 4000, respectively, for frequencies from 1.83 to 2.52 THz. These results demonstrate that wafer scalable CVD graphene, without hBN encapsulation, can host coherent AGP resonances and exhibit an efficient polaritonic enhanced photoresponse under appropriate gating, antenna coupling, and AGP cavity design, opening a route to scalable, polarization and frequency selective, liquid nitrogen cooled, and low power consumption THz detection platforms based on plasmon thermoelectric transduction.

cond-mat.mes-hall↗

arXiv2025

Single-Photon Detection in Few-Layer NbSe$_2$ Superconducting Nanowires

Superconducting Nanowire Single-Photon Detectors (SNSPDs) are key building blocks for photonic quantum technologies due to their ability to detect single photons with ultra-high efficiency, low dark counts and fast temporal resolution. Superconducting materials exhibiting high uniformity, large absorption cross-section and atomic-scale thickness are desirable to extend single-photon detection from the near-infrared up to the terahertz regime, where existing material choices are especially constrained. Substrate independence would further open the way to integrate detectors onto functional materials and heterostructures, enhancing performance and enabling proximal read-out of a wide range of individual excitations. Here, we top-down shape the prototypical two-dimensional superconductor niobium diselenide (NbSe$_2$) into few-layer nanowires less than 100 nm wide and demonstrate single-photon detection at 780 and 1550 nm. At the same time, the dark-count rate remains below 1 Hz up to the switching current and we achieve a timing jitter below 50 ps. We use a diffusive hot-spot model to estimate a theoretical cut-off wavelength that surpasses the millimetre range. Our results open up routes toward quantum limited detectors integrated into quantum-photonic circuits and quantum devices, with the potential for novel detection capabilities and unprecedented energy sensitivity.

cond-mat.supr-con↗

arXiv2025

Broadband, Flexible, Skin-Compatible Carbon Dots/Graphene Photodetectors for Wearable Applications

The development of wearable photodetectors demands a unique combination of broadband optical sensitivity, mechanical flexibility, and skin-compatibility, with these requirements rarely met simultaneously by existing technologies. Here, we present photodetectors that combine all of these performances. This is achieved by integrating carbon dots, engineered for extended ultraviolet-to-near-infrared absorption, with single-layer graphene transferred onto a plastic substrate. Unlike traditional quantum dot systems, our carbon dots achieve a broad ultraviolet-to-near-infrared response without toxic heavy metals. Graphene provides an efficient channel for charge transport, while a biocompatible chitosan-glycerol electrolyte enables efficient, low-voltage carrier modulation, with peak performance at approximately 0.5 V gate bias. The resulting photodetectors exhibit a broadband photoresponse with responsivities of approximately 0.19 A/W at 406 nm, 0.32 A/W at 642 nm, and 0.18 A/W at 785 nm. They maintain consistent performance at a bending radius of 0.8 cm with negligible degradation after repeated cycles. Furthermore, skin-compatibility assessments using the SkinEthic model confirm the non-toxic nature and suitability of our devices for direct skin contact. The combination of broadband absorption (400-800 nm), flexibility, and skin-compatibility, along with low-voltage operation ($<$ 1.5 V), positions our photodetectors as promising building blocks for next-generation wearable optoelectronics.

cond-mat.other↗

arXiv2024

Facile synthesis of palladium hydride via ionic gate-driven protonation using a deep eutectic solvent

Developing novel protocols for hydrogen (H) loading is crucial for furthering the investigation of hydrides as potential high-temperature superconductors at lower pressures compared to recent discoveries. Ionic gating-induced protonation (IGP) has emerged as a promising technique for H loading due to its inherent simplicity, but it can be limited in the maximum density of injected H when ionic liquids are used as a gating medium. Additionally, most ionic liquids are limited by high production costs, complex synthesis, and potential toxicity. Here, we demonstrate that large H concentrations can be successfully injected in both palladium (Pd) bulk foils and thin films (up to a stoichiometry PdH$_{0.89}$) by using a deep eutectic solvent (DES) choline chloride-glycerol 1:3 as gate electrolyte and applying gate voltages in excess of the cathodic stability limit. The attained H concentrations are large enough to induce superconductivity in Pd, albeit with an incomplete resistive transition which suggests a strongly inhomogeneous H incorporation in the Pd matrix. This DES-based IGP protocol can be used as a guideline for maximizing H loading in different materials, although specific details of the applied voltage profile might require adjustments based on the material under investigation.

cond-mat.mtrl-sci↗

arXiv2024

Enhanced Piezoelectricity in Sustainable-by-design Chitosan Nanocomposite Elastomers for Prosthetics, Robotics, and Circular Electronics

Piezoelectricity, the generation of electric charge in response to mechanical stress, is a key property in both natural and synthetic materials. This study significantly boosts the piezoelectric response of chitosan, a biodegradable biopolymer, by integrating chitin/chitosan nanocrystals into natural chitosan-based thin film elastomers. The resulting materials achieve d$_{33}$ values of 15-19 pmV$^{-1}$, a marked improvement over the 5-9 pmV$^{-1}$ observed in pure chitosan films thanks to increased crystallinity from the nanocrystals. We utilize piezoresponse force microscopy (PFM) to accurately measure the d$_{33}$ coefficient, employing an engineered extraction method that eliminates the electrostatic contribution, which can overestimate the piezoelectric response. The resulting chitosan elastomers exhibit elastic deformation up to 40\% strain and a Young's modulus of approximately 100 MPa, similar to soft tissues. These properties, along with the fact that the employed materials can be entirely crafted from upcycled biowaste, make these elastomers ideal for prosthetics, wearable devices, energy harvesters, and sustainable transducers. Our findings underscore the potential of chitosan-based piezoelectric materials for advanced applications in biotechnology, soft robotics, and the green Internet of Things.

cond-mat.other↗

arXiv2024

Signatures of a surface spin-orbital chiral metal

The relation between crystal symmetries, electron correlations, and electronic structure steers the formation of a large array of unconventional phases of matter, including magneto-electric loop currents and chiral magnetism. Detection of such hidden orders is a major goal in condensed matter physics. However, to date, nonstandard forms of magnetism with chiral electronic ordering have been experimentally elusive. Here, we develop a theory for symmetry-broken chiral ground states and propose a methodology based on circularly polarized spin-selective angular-resolved photoelectron spectroscopy to probe them. We exploit the archetypal quantum material Sr2RuO4 and reveal spectroscopic signatures which, even though subtle, may be reconciled with the formation of spin-orbital chiral currents at the material surface. As we shed light on these chiral regimes, our findings pave the way for a deeper understanding of ordering phenomena and unconventional magnetism.

cond-mat.str-el↗

arXiv2022

Hysteresis-Free High Mobility Graphene Encapsulated in Tungsten Disulfide

High mobility is a crucial requirement for a large variety of electronic device applications. The state-of-the-art for high quality graphene devices is based on heterostructures made with graphene encapsulated in $>80\,$nm-thick flakes of hexagonal boron nitride (hBN). Unfortunately, scaling up multilayer hBN while precisely controlling the number of layers remains an elusive challenge, resulting in a rough material unable to enhance the mobility of graphene. This leads to the pursuit of alternative, scalable materials, which can be simultaneously used as substrate and encapsulant for graphene. Tungsten disulfide (WS$_2$) is a transition metal dichalcogenide, which was successfully grown in large ($\sim$mm-size) multi-layers by chemical vapour deposition. However, the resistance \textit{vs} gate voltage characteristics when gating graphene through WS$_2$ exhibit largely hysteretic shifts of the charge neutrality point (CNP) in the order of $Δn\sim$2.6$\cdot$10$^{11}$ cm$^{-2}$, hindering the use of WS$_2$ as a reliable encapsulant. The hysteresis originates due to the charge traps from sulfur vacancies present in WS$_2$. In this work, we report for the first time the use of WS$_2$ as a substrate and the overcoming of hysteresis issues by chemically treating WS$_2$ with a super-acid, which passivates these vacancies and strips the surface from contaminants. The hysteresis is significantly reduced below the noise level by at least a factor five (to $Δn<$5$\cdot$10$^{10}$ cm$^{-2}$) and, simultaneously, the room-temperature mobility of WS$_2$-encapsulated graphene is as high as $\sim$6.2$\cdot$10$^{4}$ cm$^{-2}$V$^{-1}$s$^{-1}$ at a carrier density $n$ $\sim$1$\cdot$ 10$^{12}$ cm$^{-2}$. Our results promote WS$_2$ to a valid alternative to hBN as encapsulant for high-performance graphene devices.

cond-mat.mes-hall↗

arXiv2020

Tunable broadband light emission from graphene

Graphene is an ideal material for integrated nonlinear optics thanks to its strong light-matter interaction and large nonlinear optical susceptibility. Graphene has been used in optical modulators, saturable absorbers, nonlinear frequency converters, and broadband light emitters. For the latter application, a key requirement is the ability to control and engineer the emission wavelength and bandwidth, as well as the electronic temperature of graphene. Here, we demonstrate that the emission wavelength of graphene$'$ s broadband hot carrier photoluminescence can be tuned by integration on photonic cavities, while thermal management can be achieved by out-of-plane heat transfer to hexagonal boron nitride. Our results pave the way to graphene-based ultrafast broadband light emitters with tunable emission.

physics.optics↗

arXiv2020

Low-loss integrated nanophotonic circuits with layered semiconductor materials

Monolayer transition metal dichalcogenides with direct bandgaps are emerging candidates for microelectronics, nano-photonics, and optoelectronics. Transferred onto photonic integrated circuits (PICs), these semiconductor materials have enabled new classes of light-emitting diodes, modulators and photodetectors, that could be amenable to wafer-scale manufacturing. For integrated photonic devices, the optical losses of the PICs are critical. In contrast to silicon, silicon nitride (Si3N4) has emerged as a low-loss integrated platform with a wide transparency window from ultraviolet to mid-infrared and absence of two-photon absorption at telecommunication bands. Moreover, it is suitable for nonlinear integrated photonics due to its high Kerr nonlinearity and high-power handing capability. These features of Si3N4 are intrinsically beneficial for nanophotonics and optoelectronics applications. Here we report a low-loss integrated platform incorporating monolayer molybdenum ditelluride (1L-MoTe2) with Si3N4 photonic microresonators. We show that, with the 1L-MoTe2, microresonator quality factors exceeding 3 million in the telecommunication O-band to E-band are maintained. We further investigate the change of microresonator dispersion and resonance shift due to the presence of 1L-MoTe2, and extrapolate the optical loss introduced by 1L-MoTe2 in the telecommunication bands, out of the excitonic transition region. Our work presents a key step for low-loss, hybrid PICs with layered semiconductors without using heterogeneous wafer bonding.

physics.optics↗

arXiv2019

Optoelectronic mixing with high frequency graphene transistors

Graphene is ideally suited for optoelectronic applications. It offers absorption at telecom wavelengths, high-frequency operation and CMOS-compatibility. We report optoelectronic mixing up to to 67GHz using a back-gated graphene field effect transistor (GFET). We also present a model to describe the resulting mixed current. These results pave the way for GETs optoelectronic mixers for mm-wave applications, such as telecommunications and RADAR/LIDAR systems.

physics.app-ph↗

arXiv2019

Niobium diselenide superconducting photodetectors

We report the photoresponse of niobium diselenide (NbSe$_2$), a transition metal dichalcogenide (TMD) which exhibits superconducting properties down to a single layer. Devices are built by using micro-mechanically cleaved 2 to 10 layers and tested under current bias using nano-optical mapping in the 350mK-5K range, where they are found to be superconducting. The superconducting state can be broken by absorption of light, resulting in a voltage signal when the devices are current biased. The response found to be energy dependent making the devices useful for applications requiring energy resolution, such as bolometry, spectroscopy and infrared imaging.

cond-mat.supr-con↗

arXiv2018

Multi-Valley Superconductivity In Ion-Gated MoS2 Layers

Layers of transition metal dichalcogenides (TMDs) combine the enhanced effects of correlations associated with the two-dimensional limit with electrostatic control over their phase transitions by means of an electric field. Several semiconducting TMDs, such as MoS$_2$, develop superconductivity (SC) at their surface when doped with an electrostatic field, but the mechanism is still debated. It is often assumed that Cooper pairs reside only in the two electron pockets at the K/K' points of the Brillouin Zone. However, experimental and theoretical results suggest that a multi-valley Fermi surface (FS) is associated with the SC state, involving 6 electron pockets at the Q/Q' points. Here, we perform low-temperature transport measurements in ion-gated MoS$_2$ flakes. We show that a fully multi-valley FS is associated with the SC onset. The Q/Q' valleys fill for doping$\gtrsim2\cdot10^{13}$cm$^{-2}$, and the SC transition does not appear until the Fermi level crosses both spin-orbit split sub-bands Q$_1$ and Q$_2$. The SC state is associated with the FS connectivity and promoted by a Lifshitz transition due to the simultaneous population of multiple electron pockets. This FS topology will serve as a guideline in the quest for new superconductors.

cond-mat.supr-con↗

arXiv2018

Charge-tuneable biexciton complexes in monolayer WSe$_{2}$

Multi-exciton states such as biexcitons, albeit theoretically predicted, have remained challenging to identify in atomically thin transition metal dichalcogenides so far. Here, we use excitation-power, electric-field and magnetic-field dependence of photoluminescence to report direct experimental evidence of two biexciton complexes in monolayer tungsten diselenide: the neutral and the negatively charged biexciton. We demonstrate bias-controlled switching between these two states, we determine their internal structure and we resolve a fine-structure splitting of 2.5 meV for the neutral biexciton. Our results unveil multi-particle exciton complexes in transition metal dichalcogenides and offer direct routes to their deterministic control in many-body quantum phenomena.

cond-mat.mes-hall↗

arXiv2017

Photo-Induced Bandgap Renormalization Governs the Ultrafast Response of Single-Layer MoS2

Transition metal dichalcogenides (TMDs) are emerging as promising two-dimensional (2d) semiconductors for optoelectronic and flexible devices. However, a microscopic explanation of their photophysics -- of pivotal importance for the understanding and optimization of device operation -- is still lacking. Here we use femtosecond transient absorption spectroscopy, with pump pulse tunability and broadband probing, to monitor the relaxation dynamics of single-layer MoS2 over the entire visible range, upon photoexcitation of different excitonic transitions. We find that, irrespective of excitation photon energy, the transient absorption spectrum shows the simultaneous bleaching of all excitonic transitions and corresponding red-shifted photoinduced absorption bands. First-principle modeling of the ultrafast optical response reveals that a transient bandgap renormalization, caused by the presence of photo-excited carriers, is primarily responsible for the observed features. Our results demonstrate the strong impact of many-body effects in the transient optical response of TMDs even in the low-excitation-density regime.

cond-mat.mtrl-sci↗

arXiv2017

p-wave triggered superconductivity in single layer graphene on an electron-doped oxide superconductor

Electron pairing in the vast majority of superconductors follows the Bardeen-Cooper-Schrieffer theory of superconductivity, which describes the condensation of electrons into pairs with antiparallel spins in a singlet state with an s-wave symmetry. Unconventional superconductivity is predicted in single layer graphene where the electrons pair with a p-wave or chiral d-wave symmetry, depending on the position of the Fermi energy with respect to the Dirac point. By placing single layer graphene on an electron-doped (non-chiral) d-wave superconductor and performing local scanning tunnelling microscopy and spectroscopy, here we show evidence for a p-wave triggered superconducting density of states in single layer graphene. The realization of unconventional superconductivity in single layer graphene offers an exciting new route for the development of p-wave superconductivity using two-dimensional materials with transition temperatures above 4.2 K.

cond-mat.supr-con↗

arXiv2014

Universal scaling of the critical temperature for thin films near the superconducting-to-insulating transition

Thin superconducting films form a unique platform for geometrically-confined, strongly-interacting electrons. They allow an inherent competition between disorder and superconductivity, which in turn enables the intriguing superconducting-to-insulator transition and believed to facilitate the comprehension of high-Tc superconductivity. Furthermore, understanding thin film superconductivity is technologically essential e.g. for photo-detectors, and quantum-computers. Consequently, the absence of an established universal relationships between critical temperature ($T_c$), film thickness ($d$) and sheet resistance ($R_s$) hinders both our understanding of the onset of the superconductivity and the development of miniaturised superconducting devices. We report that in thin films, superconductivity scales as $d^.$$T_c(R_s)$. We demonstrated this scaling by analysing the data published over the past 46 years for different materials (and facilitated this database for further analysis). Moreover, we experimentally confirmed the discovered scaling for NbN films, quantified it with a power law, explored its possible origin and demonstrated its usefulness for superconducting film-based devices.

cond-mat.supr-con↗

arXiv2014

Eight-fold signal amplification of a superconducting nanowire single-photon detector using a multiple-avalanche architecture

Superconducting nanowire avalanche single-photon detectors (SNAPs) with n parallel nanowires are advantageous over single-nanowire detectors because their output signal amplitude scales linearly with n. However, the SNAP architecture has not been viably demonstrated for n > 4. To increase n for larger signal amplification, we designed a multi-stage, successive-avalanche architecture which used nanowires, connected via choke inductors in a binary-tree layout. We demonstrated an avalanche detector with n = 8 parallel nanowires and achieved eight-fold signal amplification, with a timing jitter of 54 ps.

physics.ins-det↗