arXiv subjects

Dominique Vuillaume

Publications and source records attributed to Dominique Vuillaume.

57 records · Page 4Linked to original sources

arXiv2004

1-octadecene monolayers on Si(111) hydrogen-terminated surfaces: effects of substrate doping

We have studied the electronic properties, in relation to their structural properties, of monolayers of 1-octadecene attached on a hydrogen-terminated (111) silicon surface. The molecules are attached using the free-radical reaction between C=C and Si-H activated by an ultraviolet illumination. We have compared the structural and electrical properties of monolayers formed on silicon substrate of different types (n-type and p-type) and different doping concentrations from low-doped (~1E14 cm-3) to highly doped (~1E19 cm-3) silicon substrates. We show that the monolayers on n-, p- and p+ silicon are densely packed and that they act as very good insulating films at a nanometer thickness with leakage currents as low as ~1E-7 A.cm-2 and high quality capacitance-voltage characteristics. The monolayers formed on n+-type silicon are more disordered and therefore exhibit larger leakage current densities (>1E-4 A.cm-2) when embedded in a silicon/monolayer/metal junction. The inferior structural and electronic properties obtained with n+-type silicon pinpoint the important role of surface potential and of the position of the surface Fermi level during the chemisorption of the organic monolayers.

cond-mat.mtrl-sci↗

arXiv2003

Charge transport in l-DNA probed by conducting-AFM, and relationship with its structure

We studied the electrical conductivity of DNA samples as function of the number of DNA molecules. We showed that the insulating gap (no current at low voltage) increases from ~1-2 V for bundles and large ropes to ~4-7 V for few DNA molecules. From the distance dependent variation of the current, a unique hopping distance of ~3 nm is calculated (polaron-hopping model) independently of the number of DNA in the sample. The highly resistive behavior of the single DNA is correlated with its flattened conformation on the surface (reduced thickness, ~0.5-1.5 nm, compared to its nominal value, ~2 nm).

cond-mat.soft↗

arXiv2003

Molecular rectifying diodes from self-assembly on silicon

We demonstrate a molecular rectifying junction made from a sequential self-assembly on silicon. The device structure consists of only one conjugated (p) group and an alkyl spacer chain. We obtain rectification ratios up to 37 and threshold voltages for rectification between -0.3V and -0.9V. We show that rectification occurs from resonance through the highest occupied molecular orbital of the p-group in good agreement with our calculations and internal photoemission spectroscopy. This approach allows us to fabricate molecular rectifying diodes compatible with silicon nanotechnologies for future hybrid circuitries.

cond-mat.mtrl-sci↗