arXiv subjects

Dominique Vuillaume

Publications and source records attributed to Dominique Vuillaume.

At least 55 records · Page 3Linked to original sources

arXiv2015

Non-Arrhenius conduction due to the interface-trap-induced disorder in X-doped amorphous InXZnO thin-film transistors

Thin film transistors, with channels composed of In-X-Zn oxides, IXZO, with X dopants: Ga, Sb, Be, Mg, Ag, Ca, Al, Ni, and Cu, were fabricated and their I-V characteristics were taken at selected temperatures in the 77K<T<300K range. The low field mobility, mu, and the interface defect density, Nst were extracted from the characteristics for each of the studied IXZOs. At higher T the mobility follows the Arrhenius law with an upward distortion, increasing as T was lowered, gradually transforming into the exp [-(T0/T)1/4] variation. We showed that mu(T, Nst) follows mu0exp[-Eaeff(T,Nst)/kT], with T-dependent effective activation energy Eaeff(T, Nst) accounts for the data, revealing a linear correlation between Eaeff and Nst at higher T. Temperature variation of Eaeff(T, Nst) was evaluated using a model assuming a random distribution of conduction mobility edge Ec values in the oxides, stemming from spatial fluctuations induced by disorder in the interface traps distribution. For a Gaussian distribution of Ec, the activation energy Eaeff(T, Nst) varies linearly with 1/T, which accounts satisfactorily for the data obtained on all the studied IXZOs. The model also shows that Eaeff(T, Nst) is a linear function of Nst at a fixed T, which explains the exponential decrease of mu with NST.

cond-mat.mes-hall↗

arXiv2014

Impact of dopant species on the interfacial trap density and mobility in amorphous In-X-Zn-O solution-processed thin-film transistors

Alloying of In/Zn oxides with various X atoms stabilizes the IXZO structures but generates electron traps in the compounds, degrading the electron mobility. To assess whether the latter is linked to the oxygen affinity or the ionic radius, of the X element, several IXZO samples are synthesized by the sol-gel process, with a large number (14) of X elements. The IXZOs are characterized by XPS, SIMS, DRX, and UV-spectroscopy and used for fabricating thin film transistors. Channel mobility and the interface defect density NST, extracted from the TFT electrical characteristics and low frequency noise, followed an increasing trend and the values of mobility and NST are linked by an exponential relation. The highest mobility (8.5 cm2/Vs) is obtained in In-Ga-Zn-O, and slightly lower value for Sb and Sn-doped IXZOs, with NST is about 2E12 cm2/eV, close to that of the In-Zn-O reference TFT. This is explained by a higher electronegativity of Ga, Sb, and Sn than Zn and In, their ionic radius values being close to that of In and Zn. Consequently, Ga, Sb, and Sn induce weaker perturbations of In-O and Zn-O sequences in the sol-gel process, than the X elements having lower electronegativity and different ionic radius. The TFTs with X = Ca, Al, Ni and Cu exhibited the lowest mobility and NST > 1E13 cm2/eV, most likely because of metallic or oxide clusters formation.

cond-mat.mes-hall↗

arXiv2012

A Crown-Ether Loop-Derivatized Oligothiophene Doubly Attached on Gold Surface as Cation-Binding Switchable Molecular Junction

A crown-ether dithiol quaterthiophene is synthesized for its covalent immobilization by double fixation on gold surface. While the corresponding dithioester precursor exhibits Pb2+ complexation properties in solution as evidenced by UV-vis spectroscopy and cyclic voltammetry, this Pb2+ affinity is still maintained for monolayers of the dithiol on gold. In addition, current-voltage measurements by Eutectic GaIn drop contact on the monolayer show a significant increase (up to 1.6 x 1E3) of the current at low bias after Pb2+ complexation.

cond-mat.mes-hall↗

arXiv2012

Molecule-Electrode Interface Energetics in Molecular Junction: a Transition Voltage Spectroscopy Study

We assess the performances of the transition voltage spectroscopy (TVS) method to determine the energies of the molecular orbitals involved in the electronic transport though molecular junctions. A large number of various molecular junctions made with alkyl chains but with different chemical structure of the electrode-molecule interfaces are studied. In the case of molecular junctions with clean, unoxidized electrode-molecule interfaces, i.e. alkylthiols and alkenes directly grafted on Au and hydrogenated Si, respectively, we measure transition voltages in the range 0.9 - 1.4 V. We conclude that the TVS method allows estimating the onset of the tail of the LUMO density of states, at energy located 1.0 - 1.2 eV above the electrode Fermi energy. For oxidized interfaces (e.g. the same monolayer measured with Hg or eGaIn drops, or monolayers formed on a slightly oxidized silicon substrate), lower transition voltages (0.1 - 0.6 V) are systematically measured. These values are explained by the presence of oxide-related density of states at energies lower than the HOMO-LUMO of the molecules. As such, the TVS method is a useful technique to assess the quality of the molecule-electrode interfaces in molecular junctions.

cond-mat.mes-hall↗

arXiv2012

Role of Hydration on the Electronic Transport through Molecular Junctions on Silicon

Molecular electronics is a fascinating area of research with the ability to tune device properties by a chemical tailoring of organic molecules. However, molecular electronics devices often suffer from dispersion and lack of reproducibility of their electrical performances. Here, we show that water molecules introduced during the fabrication process or coming from the environment can strongly modify the electrical transport properties of molecular junctions made on hydrogen-terminated silicon. We report an increase in conductance by up to three orders of magnitude, as well as an induced asymmetry in the current-voltage curves. These observations are correlated with a specific signature of the dielectric response of the monolayer at low frequency. In addition, a random telegraph signal is observed for these junctions with macroscopic area. Electrochemical charge transfer reaction between the semiconductor channel and H+/H2 redox couple is proposed as the underlying phenomenon. Annealing the samples at 150°C is an efficient way to suppress these water-related effects. This study paves the way to a better control of molecular devices and has potential implications when these monolayers are used as hydrophobic layers or incorporated in chemical sensors.

cond-mat.mes-hall↗

arXiv2012

Conductance statistics from a large array of sub-10 nm molecular junctions

Devices made of few molecules constitute the miniaturization limit that both inorganic and organic-based electronics aspire to reach. However, integration of millions of molecular junctions with less than 100 molecules each has been a long technological challenge requiring well controlled nanometric electrodes. Here we report molecular junctions fabricated on a large array of sub-10 nm single crystal Au nanodots electrodes, a new approach that allows us to measure the conductance of up to a million of junctions in a single conducting Atomic Force Microscope (C-AFM) image. We observe two peaks of conductance for alkylthiol molecules. Tunneling decay constant (beta) for alkanethiols, is in the same range as previous studies. Energy position of molecular orbitals, obtained by transient voltage spectroscopy, varies from peak to peak, in correlation with conductance values.

cond-mat.mes-hall↗

arXiv2011

Theory of electrical rectification in a molecular monolayer

The current-voltage characteristics in Langmuir-Blodgett monolayers of γ-hexadecylquinolinium tricyanoquinodimethanide (C16H33Q-3CNQ) sandwiched between Al or Au electrodes is calculated, combining ab initio and self-consistent tight binding techniques. The rectification current depends on the position of the LUMO and HOMO relative to the Fermi levels of the electrodes as in the Aviram-Ratner mechanism, but also on the profile of the electrostatic potential which is extremely sensitive to where the electroactive part of the molecule lies in the monolayer. This second effect can produce rectification in the direction opposite to the Aviram-Ratner prediction.

physics.comp-ph↗

arXiv2011

Evaluation of a gate capacitance in the sub-aF range for a chemical field-effect transistor with a silicon nanowire channel

An evaluation of the gate capacitance of a field-effect transitor (FET) whose channel length and width are several ten nanometer, is a key point for sensors applications. However, experimental and precise evaluation of capacitance in the aF range or less has been extremely difficult. Here, we report an extraction of the capacitance down to 0.55 aF for a silicon FET with a nanoscale wire channel whose width and length are 15 and 50 nm, respectively. The extraction can be achieved by using a combination of four kinds of measurements: current characteristics modulated by double gates, random-telegraph-signal noise induced by trapping and detrapping of a single electron, dielectric polarization noise, and current characteristics showing Coulomb blockade at low temperature. The extraction of such a small gate capacitance enables us to evaluate electron mobility in a nanoscale wire using a classical model of current characteristics of a FET.

cond-mat.mes-hall↗

arXiv2010

Molecular Nanoelectronics

Molecular electronics is envisioned as a promising candidate for the nanoelectronics of the future. More than a possible answer to ultimate miniaturization problem in nanoelectronics, molecular electronics is foreseen as a possible way to assemble a large numbers of nanoscale objects (molecules, nanoparticules, nanotubes and nanowires) to form new devices and circuit architectures. It is also an interesting approach to significantly reduce the fabrication costs, as well as the energetical costs of computation, compared to usual semiconductor technologies. Moreover, molecular electronics is a field with a large spectrum of investigations: from quantum objects for testing new paradigms, to hybrid molecular-silicon CMOS devices. However, problems remain to be solved (e.g. a better control of the molecule-electrode interfaces, improvements of the reproducibility and reliability, etc...).

cond-mat.mes-hall↗

arXiv2010

Relaxation dynamics in covalently bonded organic monolayers on silicon

We study the dynamic electrical response of a silicon-molecular monolayer-metal junctions and we observe two contributions in the admittance spectroscopy data. These contributions are related to dipolar relaxation and molecular organization in the monolayer in one hand, and the presence of defects at the silicon/molecule interface in the other hand. We propose a small signal equivalent circuit suitable for the simulations of these molecular devices in commercial device simulators. Our results concern monolayers of alkyl chains considered as a model system but can be extended to other molecular monolayers. These results open door to a better control and optimization of molecular devices.

cond-mat.mes-hall↗

arXiv2010

High on-off conductance switching ratio in optically-driven self-assembled conjugated molecular systems

A new azobenzene-thiophene molecular switch is designed, synthesized and used to form self-assembled monolayers (SAM) on gold. An "on/off" conductance ratio up to 7x1E3 (with an average value of 1.5x1E3) is reported. The "on" conductance state is clearly identified to the cis isomer of the azobenzene moiety. The high "on/off" ratio is explained in terms of photo-induced, configuration-related, changes in the electrode-molecule interface energetics (changes in the energy position of the molecular orbitals with respect to the Fermi energy of electrodes) in addition to changes in the tunnel barrier length (length of the molecules). First principles DFT calculations demonstrate a better delocalization of the frontier orbitals, as well as a stronger electronic coupling between the azobenzene moiety and the electrode for the cis configuration over the trans one. Measured photoionization cross-sections for the molecules in the SAM are close to the known values for azobenzene derivatives in solution.

cond-mat.mes-hall↗

arXiv2010

1/f Tunnel Current Noise through Si-bound Alkyl Monolayers

We report low frequency tunnel current noise characteristics of an organic monolayer tunnel junction. The measured devices, n-Si/alkyl chain (C18H37)/Al junctions, exhibit a clear 1/ f^y power spectrum noise with 1< y <1.2. We observe a slight bias dependent background of the normalized current noise power spectrum (SI/I^2). However, a local increase is also observed over a certain bias range, mainly if V > 0.4 V, with an amplitude varying from device to device. We attribute this effect to an energy-dependent trap-induced tunnel current. We find that the background noise, SI, scales with (\partial I/\partial V)^2 . A model is proposed showing qualitative agreements with our experimental data.

cond-mat.mes-hall↗

arXiv2008

Gold nanoparticle-pentacene memory-transistors

We demonstrate an organic memory-transistor device based on a pentacene-gold nanoparticles active layer. Gold (Au) nanoparticles are immobilized on the gate dielectric (silicon dioxide) of a pentacene transistor by an amino-terminated self-assembled monolayer. Under the application of writing and erasing pulses on the gate, large threshold voltage shift (22 V) and on/off drain current ratio of ~3E4 are obtained. The hole field-effect mobility of the transistor is similar in the on and off states (less than a factor 2). Charge retention times up to 4500 s are observed. The memory effect is mainly attributed to the Au nanoparticles.

cond-mat.mtrl-sci↗

arXiv2005

Tunnel current in self-assembled monolayers of 3-mercaptopropyltrimethoxysilane

The current density-voltage (J-V) characteristics of self assembled monolayers of 3-mercaptopropyltrimethoxysilane (MPTMS) chemisorbed on the native oxide surface of p+-doped Si demonstrate the excellent tunnel dielectric behavior of organic monolayers down to 3 carbon atoms. The J-V characteristics of MPTMS SAMs on Si are found to be asymmetric, and the direction of rectification has been found to depend upon the applied voltage range. At voltages < 2.45V, the reverse bias current was found to be higher than forward bias current; while at higher voltages this trend was reversed. This result is in agreement with Simmons theory. The tunnel barrier heights for this short chain (2.56 and 2.14 eV respectively at Au and Si interfaces) are in good agreement with the ones for longer chains (>10 carbon atoms) if the chain is chemisorbed at the electrodes. These results extend all previous experiments on such molecular tunnel dielectrics down to 3 carbon atoms. This suggests that these molecular monolayers, having good tunnel behavior (up to 2.5 eV) over a large bias range, can be used as gate dielectric well below the limits of Si-based dielectrics.

cond-mat.mtrl-sci↗

arXiv2004

Metal/organic/metal bistable memory devices

We report a bistable organic memory made of a single organic layer embedded between two electrodes, we compare to the organic/metal nanoparticle/organic tri-layers device [L.P. Ma, J. Liu, and Y. Yang, Appl. Phys. Lett. 80, 2997 (2002)]. We demonstrate that the two devices exhibit similar temperature-dependent behaviors, a thermally-activated behavior in their low conductive state (off-state) and a slightly "metallic" behavior in their high conductive state (on-state). This feature emphasizes a similar origin for the memory effect. Owing to their similar behavior, the one layer memory is advantageous in terms of fabrication cost and simplicity.

cond-mat.mtrl-sci↗

arXiv2004

Ambipolar charge injection and transport in a single pentacene monolayer island

Electrons and holes are locally injected in a single pentacene monolayer island. The two-dimensional distribution and concentration of the injected carriers are measured by electrical force microscopy. In crystalline monolayer islands, both carriers are delocalized over the whole island. On disordered monolayer, carriers stay localized at their injection point. These results provide insight into the electronic properties, at the nanometer scale, of organic monolayers governing performances of organic transistors and molecular devices.

cond-mat.mtrl-sci↗

arXiv2004

Localization and delocalization of charges injected in DNA

The electrical properties of DNA molecules are investigated by charge injection and electric force microscopy experiments. Prior to injection, DNA molecules exhibit a weak positively charged state. We probe the electrical behaviour of DNA by measuring the localized or delocalized character of the DNA charge states upon injection of excess charges. We show that injected charges do not delocalize for overstretched DNA prepared by a receding meniscus technique, while the adjunction of spermidine during the deposition leads to relaxed DNA molecules exhibiting a charge delocalization over microns. The interplay between charge localization/delocalization and deposition techniques may explain that transport behaviors ranging from insulating to conductive have been reported for DNA deposited on surfaces.

cond-mat.mtrl-sci↗

arXiv2004

Conductivity of DNA probed by conducting-atomic force microscopy: effects of contact electrode, DNA structure, surface interactions

We studied the electrical conductivity of DNA molecules with conducting atomic force microscopy as a function of the chemical nature of the substrate surfaces, the nature of the electrical contact, and the number of DNA molecules (from a few molecules, to ropes and large fibers containing up to ~ 106 molecules). Independent of the chemical nature of the surface (hydrophobic or hydrophilic, electrically neutral or charged), we find that DNA is highly resistive. From a large number of current-voltage curves measured at several distance along the DNA, we estimate a conductivity of about 10-6-10-5 S.cm-1 per DNA molecule. For single DNA molecules, this highly resistive behavior is correlated with its flattened conformation on the surface (reduced thickness, \~0.5-1.5 nm, compared to its nominal value, ~2.4 nm). We find that intercalating an organic semiconductor buffer film between the DNA and the metal electrode improves the reliability of the contact, while direct metal evaporation usually destroys the DNA and prevents any current measurements. After long exposure under vacuum or dry nitrogen, the conductivity strongly decreases, leading to the conclusion that water molecules and ions in the hydration shell of the DNA play a major role.

cond-mat.mtrl-sci↗