arXiv subjects

Donghoi Kim

Publications and source records attributed to Donghoi Kim.

3 recordsLinked to original sources

arXiv2026

GaN Nucleation Landscape on Patterned Sapphire Shaped by the Growth Temperature of Directly Grown Boron-Compound Masks

The growth temperature of directly grown boron-compound masks on patterned sapphire can modify the local accessibility of the underlying sapphire surface and thereby alter the subsequent nucleation behavior of GaN. In this work, we investigate how ammonia-borane-derived boron-compound masks grown at different temperatures shape the GaN nucleation landscape within circular SiO$_2$ openings during the initial stage of epitaxial lateral overgrowth. The preferential nucleation position of GaN changes systematically with mask growth temperature: masks grown at 700--750$^\circ$C produce pronounced edge-biased distributions, whereas higher-temperature masks lead to more inward-shifted and spatially sparse GaN domains. Quantitative analysis of the GaN areal fraction, the number of visibly isolated domains, and the radial distribution of domain centers shows that the mask growth temperature affects both the amount of GaN coverage and the spatial arrangement of GaN domains within each opening. The nonmonotonic change in the number of visibly isolated domains is interpreted as a consequence of competition between reduced lateral merging and reduced effective substrate accessibility, rather than as a direct measure of the number of active nucleation sites. Kinetic Monte Carlo simulations reproduce the essential experimental trends by varying the effective density and radial distribution of substrate-accessible sites. These results suggest that the growth temperature of directly formed boron-compound masks provides a practical means of reshaping the intra-opening GaN nucleation landscape by controlling the spatial distribution and effectiveness of local pathways through which GaN precursors can access the underlying sapphire surface.

cond-mat.mtrl-sci↗

arXiv2026

Propagation-mediated amplification of \{11\={2}0\}-biased inversion domain boundary alignment in polarity-mixed GaN lateral overgrowth

GaN polarity inversion and the associated inversion domain boundaries (IDBs) are frequently observed during lateral overgrowth and are often discussed in terms of the small energetic spread among competing IDB structures predicted by first-principles calculations. In circular mask openings, $\{11\bar{2}0\}$-aligned IDBs have previously been explained by geometric closure of a single-polarity hexagonal domain at the circular boundary. Here we examine an experimentally distinct regime in which opposite-polarity domains already coexist within the opening before the later development of long, straight IDB traces. In this mixed-polarity regime, the final trace orientation cannot be attributed solely to the macroscopic circular boundary. Nevertheless, plan-view SEM line-trace statistics show that IDB orientations remain biased toward the $\{11\bar{2}0\}$ family. To quantify how this bias develops during propagation, we perform distance-resolved, length-weighted orientation analysis in concentric annular regions defined from the opening center. The resulting metrics show that $\{11\bar{2}0\}$-biased alignment is progressively amplified with propagation distance, while the orientation distribution becomes narrower, indicating systematic sharpening of the preferred alignment state. We further apply the same ring-resolved statistical operators to minimal two-domain propagation simulations in a circular opening and find that a propagation-mediated anisotropy reproduces the observed radial amplification under fixed circular geometry. Together, these results establish a quantitative phenomenology of $\{11\bar{2}0\}$-biased IDB alignment in polarity-mixed GaN lateral overgrowth on patterned sapphire and indicate that, although mask-boundary-imposed selection may describe single-polarity closure cases, the present mixed-polarity regime is better explained by propagation-mediated amplification.

cond-mat.mtrl-sci↗

arXiv2021

Thru-Hole Epitaxy: Is Remote Epitaxy Really Remote?

The remote epitaxy was originally proposed to grow a film, which is not in contact but crystallographically aligned with a substrate and easily detachable due to a van der Waals material as a space layer. Here we show that the claimed remote epitaxy is more likely to be nonremote `thru-hole' epitaxy. On a substrate with thick and symmetrically incompatible van der Waals space layer or even with a three-dimensional amorphous oxide film in-between, we demonstratively grew GaN domains through thru-holes via connectedness-initiated epitaxial lateral overgrowth, not only readily detachable but also crystallographically aligned with a substrate. Our proposed nonremote thru-hole epitaxy, which is embarrassingly straightforward and undemanding, can provide wider applicability of the benefits known to be only available by the claimed remote epitaxy.

cond-mat.mtrl-sci↗