GaN Nucleation Landscape on Patterned Sapphire Shaped by the Growth Temperature of Directly Grown Boron-Compound Masks

Abstract

The growth temperature of directly grown boron-compound masks on patterned sapphire can modify the local accessibility of the underlying sapphire surface and thereby alter the subsequent nucleation behavior of GaN. In this work, we investigate how ammonia-borane-derived boron-compound masks grown at different temperatures shape the GaN nucleation landscape within circular SiO$_2$ openings during the initial stage of epitaxial lateral overgrowth. The preferential nucleation position of GaN changes systematically with mask growth temperature: masks grown at 700--750$^\circ$C produce pronounced edge-biased distributions, whereas higher-temperature masks lead to more inward-shifted and spatially sparse GaN domains. Quantitative analysis of the GaN areal fraction, the number of visibly isolated domains, and the radial distribution of domain centers shows that the mask growth temperature affects both the amount of GaN coverage and the spatial arrangement of GaN domains within each opening. The nonmonotonic change in the number of visibly isolated domains is interpreted as a consequence of competition between reduced lateral merging and reduced effective substrate accessibility, rather than as a direct measure of the number of active nucleation sites. Kinetic Monte Carlo simulations reproduce the essential experimental trends by varying the effective density and radial distribution of substrate-accessible sites. These results suggest that the growth temperature of directly formed boron-compound masks provides a practical means of reshaping the intra-opening GaN nucleation landscape by controlling the spatial distribution and effectiveness of local pathways through which GaN precursors can access the underlying sapphire surface.