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Doron Naveh

Publications and source records attributed to Doron Naveh.

16 recordsLinked to original sources

Spectrally Programmable Spin-Polarized Photocurrents in WSe$_2$-NiPS$_3$ Magnetic van der Waals Heterostructures

Efficient generation and control of spin-polarized currents in semiconductors remain central challenges for spin-based electronics, particularly due to impedance mismatch and the reliance on magnetic fields or ferromagnetic contacts. Here, we introduce a materials platform for spectrally programmable spin transport based on a van der Waals heterostructure combining the antiferromagnetic semiconductor NiPS$_3$ with WSe$_2$. In a p-n diode architecture, circularly polarized excitation produces pronounced photoconductive resonances with spin polarization reaching 80% near the Neel temperature and persisting at 30% at room temperature. Remarkably, selected spectral bands retain their polarization sign across the magnetic phase transition, evidencing robust, spectrally protected spin-polarized current generation. Polarization-resolved photogalvanic measurements reveal a dominant circular injection-current mechanism, confirming spin-polarized carrier transport. First-principles calculations show that an applied electric field induces interfacial hybridization and spin-layer locking, giving rise to localized symmetry breaking and enhanced optical absorption while preserving global time-reversal symmetry. These results establish spectral tuning of excitation as a new control knob for spin transport, enabling spin-current generation without magnetic fields or polarization switching. Our findings position magnetic van der Waals heterostructures as a versatile platform for opto-spintronic functionality and spectrally programmable spintronic devices.

cond-mat.mtrl-sci

Strain-Enhanced Coherence in Curved hBN Quantum Emitters

Hexagonal boron nitride (hBN) hosts robust room-temperature single-photon emitters, yet their coherence is typically limited by phonon induced dephasing and spectral broadening. Here, we show that thermally induced curvature in bulk like hBN flakes provides a strain enabled route to suppress defect phonon coupling under ambient conditions. Nanoscale bubbles formed by thermal processing generate strong through thickness strain gradients, which we directly probe by infrared nano spectroscopy. These measurements reveal strain induced splitting of in-plane phonon modes, evidencing a substantial local modification of the phonon density of states. Quantum emitters localized within these curved regions exhibit markedly enhanced room temperature spectral purity, with Debye Waller factors of 0.91 and narrower line widths than emitters in flat regions. Photon correlation measurements confirm high-purity single photon emission at room temperature. Supported by first-principles calculations, we attribute this behavior to strain driven phonon redistribution, which depletes phonons in tensile regions and accumulates them in compressive regions, thereby creating locally phonon suppressed environments for defect emitters. These results establish strain engineering as an effective route for phonon control in hBN and open a pathway toward high coherence, room-temperature quantum light sources for integrated nano photonic platforms.

cond-mat.mtrl-sci

Localized Exciton Emission with Spontaneous Circular Polarization in NiPS3/WSe2 Heterostructures

Two-dimensional (2D) van der Waals (vdW) heterostructures (HSs) provide a versatile platform for tailoring electronic, optical, and magnetic properties via proximity effects at their interfaces. In this work, we explore the optical response of few-layer NiPS3/WSe2 HSs using low-temperature micro-photoluminescence (μ-PL) and magneto-PL spectroscopy. The HSs exhibit multiple sharp excitonic peaks that do not appear in the individual constituent materials, indicating the emergence of localized intralayer WSe2 excitons confined by interface-induced potentials. Notably, these excitons exhibit spontaneous circular polarization even in the absence of an external magnetic field, suggesting a magnetic proximity effect induced by uncompensated spins at the NiPS3 interface. Magneto-PL measurements further reveal nonlinear Zeeman splitting, consistent with the presence of an interfacial exchange field that alters the valley exciton dynamics. Density functional theory (DFT) calculations confirm the intralayer origin of the PL and reveal interfacial hybridization and spin texture modifications, supporting the experimental findings. These results highlight how combining a 2D semiconductor with a layered antiferromagnet enables control over valley polarization and spin degrees of freedom, offering new opportunities for chiral light sources and magnetically tunable optoelectronic devices.

cond-mat.mtrl-sci

Crystal Anisotropy Implications on the Magneto-Optical Properties of van der Waals FePS3

Antiferromagnetic FePS3 has recently gained significant interest in its potential applications in spin-related devices. Here, we show that in-plane structural anisotropy has a major impact in shaping the optical responses of FePS3 single-crystals from the bulk form down to the monolayer limit. X-ray diffraction on a bulk FePS3 crystal confirms a distorted FeS6 octahedron causing inequivalent Fe-Fe distances and consequently resulting in a higher a/b lattice parameter ratio. Micro-photoluminescence observations on bulk and monolayer FePS3 reveal four emissions: one intra-atomic d-d transition (band A, centered at ~1.24 eV) and three p-d charge transfer transitions (bands B, C, and D, centered around ~1.79 eV, ~2.3 eV, and ~2.56 eV, respectively). These bands exhibit different polarization behaviors, which persist down to the monolayer limit. Density functional theory calculations from bulk to monolayer FePS3 reveal the underlying electronic structure, assign the observed emissions, and indicate why these peaks have contrasting linear and circular polarization responses. These results establish a direct structure-optics relation in FePS3, highlighting the strong coupling between lattice anisotropy, electronic transitions, and symmetry-selective optical selection rules.

cond-mat.mtrl-sci

Resolving Contradictory Estimates of Band Gaps of Bulk PdSe$_2$: A Wannier-Localized Optimally-Tuned Screened Range-Separated Hybrid Density Functional Theory Study

Palladium diselenide (PdSe$_2$) -- a layered van der Waals material -- is attracting significant attention for optoelectronics due to the wide tunability of its band gap from the infrared through the visible range as a function of the number of layers. However, there continues to be disagreement over the precise nature and value of the optical band gap of bulk PdSe$_2$, owing to the rather small value of this gap that complicates experimental measurements and their interpretation. Here, we design and employ a Wannier-localized optimally-tuned screened range-separated hybrid (WOT-SRSH) functional to investigate the electronic bandstructures and optical absorption spectra of bulk and monolayer PdSe$_2$. In particular, we account carefully for the finite exciton center-of-mass momentum within a time-dependent WOT-SRSH framework to calculate the \emph{indirect} optical gap and absorption onset accurately. Our results agree well with the best available photoconductivity measurements, as well as with state-of-the-art many-body perturbation theory calculations, confirming that bulk PdSe$_2$ has an optical gap in the mid-infrared (upper-bound of 0.44 eV). More generally, this work further bolsters the utility of the WOT-SRSH approach for predictive modeling of layered semiconductors.

cond-mat.mtrl-sci

Change in Magnetic Order in NiPS3 Single Crystals Induced by a Molecular Intercalation

Intercalation is a robust method for tuning the physical properties of a vast number of van der Waals (vdW) materials. However, the prospects of using intercalation to modify magnetism in vdWs systems and the associated mechanisms have not been investigated adequately. In this work, we modulate magnetic order in an XY antiferromagnet NiPS3 single crystals by introducing pyridine molecules into the vdWs gap under different thermal conditions. X-ray diffraction measurements indicated pronounced changes in the lattice parameter beta, while magnetization measurements at in-plane and out-of-plane configurations exposed reversal trends in the crystals Neel temperatures through intercalation-de-intercalation processes. The changes in magnetic ordering were also supported by three-dimensional thermal diffusivity experiments. The preferred orientation of the pyridine dipoles within vdW gaps was deciphered via polarized Raman spectroscopy. The results highlight the relation between the preferential alignment of the intercalants, thermal transport, and crystallographic disorder along with the modulation of anisotropy in the magnetic order. The theoretical concept of double-exchange interaction in NiPS3 was employed to explain the intercalation-induced magnetic ordering. The study uncovers the merit of intercalation as a foundation for spin switches and spin transistors in advanced quantum devices.

cond-mat.mtrl-sci

Piezoelectric Electrostatic Superlattices in Monolayer MoS$_2$

Modulation of electronic properties of materials by electric fields is central to the operation of modern semiconductor devices, providing access to complex electronic behaviors and greater freedom in tuning the energy bands of materials. Here, we explore one-dimensional superlattices induced by a confining electrostatic potential in monolayer MoS$_2$, a prototypical two-dimensional semiconductor. Using first-principles calculations, we show that periodic potentials applied to monolayer MoS$_2$ induce electrostatic superlattices in which the response is dominated by structural distortions relative to purely electronic effects. These structural distortions reduce the intrinsic band gap of the monolayer substantially while also polarizing the monolayer through piezoelectric coupling, resulting in spatial separation of charge carriers as well as Stark shifts that produce dispersive minibands. Importantly, these minibands inherit the valley-selective magnetic properties of monolayer MoS$_2$, enabling fine control over spin-valley coupling in MoS$_2$ and similar transition-metal dichalcogenides.

cond-mat.mtrl-sci

Nonlinear Self-Calibrated Spectrometer with Single GeSe-InSe Heterojunction Device

Optical spectroscopy the measurement of electromagnetic spectra is fundamental to various scientific domains and serves as the building block of numerous technologies. Computational spectrometry is an emerging field that employs an array of photodetectors with different spectral responses or a single photodetector device with tunable spectral response, in conjunction with numerical algorithms, for spectroscopic measurements. Compact single photodetectors made from layered materials are particularly attractive, since they eliminate the need for bulky mechanical and optical components used in traditional spectrometers and can easily be engineered as heterostructures to optimize device performance. However, compact tunable photodetectors are typically nonlinear devices and this adds complexity to extracting optical spectra from the device response. Here, we report on the training of an artificial neural network (ANN) to recover the full nonlinear spectral photoresponse of a nonlinear problem of high dimensionality of a single GeSe-InSe p-n heterojunction device. We demonstrate the functionality of a calibrated spectrometer in the spectral range of 400-1100 nm, with a small device footprint of ~25X25 micrometers, and we achieve a mean reconstruction error of 0.0002 for the power-spectrum at a spectral resolution of 0.35 nm. Using our device, we demonstrate a solution to metamerism, an apparent matching of colors with different power spectral distributions, which is a fundamental problem in optical imaging.

physics.app-ph

High-Index Topological Insulator Resonant Nanostructures from Bismuth Selenide

Topological insulators (TIs) are a class of materials characterized by an insulting bulk and high mobility topologically protected surface states, making them promising candidates for future optoelectronic and quantum devices. Although their electronic and transport properties have been extensively studied, their optical properties and prospective photonic capabilities have not been fully uncovered. Here, we use a combination of far-field and near-field nanoscale imaging and spectroscopy, to study CVD grown Bi2Se3 nanobeams (NBs). We first extract the mid-infrared (MIR) optical constants of Bi2Se3, revealing refractive index values as high as n ~6.4, and demonstrate that the NBs support Mie-resonances across the MIR. Local near-field reflection phase mapping reveals domains of various phase shifts, providing information on the local optical properties of the NBs. We experimentally measure up to 2π phase-shift across the resonance, in excellent agreement with FDTD simulations. This work highlights the potential of TI Bi2Se3 for quantum circuitry, non-linear generation, high-Q metaphotonics, and IR photodetection.

physics.optics

Amorphous Selenium Mie Resonators for Infrared Meta-Optics

Applying direct growth and deposition of optical surfaces holds great promise for the advancement of future nanophotonic technologies. Here, we report on a chemical vapor deposition (CVD) technique for depositing amorphous selenium (a-Se) spheres by desorption of selenium from Bi2Se3 and re-adsorption on the substrate. We utilize this process to grow scalable, large area Se spheres on several substrates and characterize their Mie-resonant response in the mid-infrared (MIR) spectral range. We demonstrate size-tunable Mie resonances spanning the 2-16 um spectral range, for single isolated resonators and large area ensembles, respectively. We further demonstrate strong absorption dips of up to 90% in ensembles of particles in a broad MIR range. Finally, we show that ultra-high-Q resonances arise in the case where Se Mie-resonators are coupled to low-loss epsilon-near-zero (ENZ) substrates. These findings demonstrate the enabling potential of amorphous Selenium as a versatile and tunable nanophotonic material that may open up avenues for on-chip MIR spectroscopy, chemical sensing, spectral imaging and large area metasurface fabrication.

physics.optics

Plasmonics in Atomically-Thin Crystalline Silver Films

Light-matter interaction at the atomic scale rules fundamental phenomena such as photoemission and lasing, while enabling basic everyday technologies, including photovoltaics and optical communications. In this context, plasmons --the collective electron oscillations in conducting materials-- are important because they allow manipulating optical fields at the nanoscale. The advent of graphene and other two-dimensional crystals has pushed plasmons down to genuinely atomic dimensions, displaying appealing properties such as a large electrical tunability. However, plasmons in these materials are either too broad or lying at low frequencies, well below the technologically relevant near-infrared regime. Here we demonstrate sharp near-infrared plasmons in lithographically-patterned wafer-scale atomically-thin silver crystalline films. Our measured optical spectra reveal narrow plasmons (quality factor $\sim4$), further supported by a low sheet resistance comparable to bulk metal in few-atomic-layer silver films down to seven Ag(111) monolayers. Good crystal quality and plasmon narrowness are obtained despite the addition of a thin passivating dielectric, which renders our samples resilient to ambient conditions. The observation of spectrally sharp and strongly confined plasmons in atomically thin silver holds great potential for electro-optical modulation and optical sensing applications.

cond-mat.mes-hall

Realizing Giant Magneto-Optical Effects in 3D Topological Insulators Without Magnetic Fields

Topological insulators display unusual light-matter interactions due to the helical nature of surface electronic states. We study the near-field interaction of light propagating in an optical fiber with crystals of Sb2Te3, a 3D topological insulator (TI), and observe a large apparent Faraday rotation. The origin of this unexpected polarization rotation in the optical fiber is attributed to a magneto-optical Kerr effect at the TI-fiber interface. We show that the combined effects of time-reversal symmetry breaking, which arises from Zeeman coupling of the electromagnetic field with the surface electrons of the TI, and inversion symmetry breaking of optical excitations, which arises from the exponential decay of the evanescent light across the TI crystal, are central to realizing this giant polarization rotation. Our work demonstrates a facile approach for realizing large magneto-optical effects without any magnetic fields by exploiting the unique physics of light-matter interactions at TI surfaces.

cond-mat.mtrl-sci

Protective Molecular Passivation of Black Phosphorous

Black phosphorous (BP) is one of the most interesting layered materials, bearing promising potential for emerging electronic and optoelectronic device technologies. The crystalline structure of BP displays in-plane anisotropy in addition to the out-of-plane anisotropy characteristic to layered materials. Therefore, BP supports anisotropic optical and transport responses that can enable unique device architectures. Its thickness-dependent direct bandgap varies in the range of around 0.3-2.0 eV (from single-layer to bulk, respectively), making BP suitable to optoelectronics in a broad spectral range. With high room-temperature mobility, exceeding 1,000 cm2V-1s-1 in thin films, BP is also a very promising material for electronics. However, BP is sensitive to oxygen and humidity due to its three-fold coordinated atoms. The surface electron lone pairs are reactive and can lead to structural degradation upon exposure to air, leading to significant device performance degradation in ambient condition. Here, we report a viable solution to overcome degradation in few-layer BP by passivating the surface with self-assembled monolayers of octadecyltrichlorosilane (OTS) that provide long-term stability in ambient conditions. Importantly, we show that this treatment does not cause any undesired carrier doping of the bulk channel material, thanks to the emergent hierarchical interface structure. Our approach is compatible with conventional electronic materials processing technologies thus providing an immediate route toward practical applications in BP devices.

cond-mat.mtrl-sci

Direct observation of patterned self-assembled monolayers and bilayers on silica-on-silicon surfaces

Self-assembled monolayers (SAMs) of organic molecules are widely employed in surface chemistry and biology, and serve as ultra-fine lithographic resists. Due to their small thickness of only a few nanometers, the analysis of patterned monolayer surfaces using conventional methods requires thorough point-by-point scanning using complicated equipment. In the work reported herein, patterned monolayers are simply and directly observed using a bright-field optical microscope. The monolayers modify the spectral reflectivity pattern of a silica-on-silicon thin film, and introduce a contrast between bare and monolayer-coated regions of the substrate. The method can also distinguish between regions of single-layer and bi-layer coatings. The observations are supported by calculations, and by control experiments using atomic force microscopy, scanning Raman spectrometry and scanning reflection spectrometry. The results are useful for electro-optic devices, selective wafer-bonding protocols and lab-on-a-chip test systems. We show here that chemical reactions leading to the formation of a bi-layer of SAMs correspond to an optical contrast visible to the naked eye, enabling such detection to provide a simple, yet effective differentiation between monolayers and adsorbed analytes with possible applications for chemical and/or biological sensing.

cond-mat.mtrl-sci

Strain-driven light polarization switching in deep ultraviolet nitride emitters

Residual strain plays a critical role in determining the crystalline quality of nitride epitaxial layers and in modifying their band structure; this often leads to several interesting physical phenomena. It is found, for example, that compressive strain in AlxGa1-xN layers grown on AlyGa1-yN (x<y) templates results in an anti-crossing of the valence bands at considerably much higher Al composition than expected. This happens even in the presence of large and negative crystal field splitting energy for AlxGa1-xN layers. A judicious magnitude of the compressive strain can support vertical light emission (out of the c-plane) from AlxGa1-xN quantum wells up to x\approx 0.80, which is desirable for the development of deep ultraviolet light-emitting diodes designed to operate below 250nm with transverse electric polarization characteristics.

cond-mat.mtrl-sci

Tunable band gaps in bilayer graphene-BN heterostructures

We investigate band-gap tuning of bilayer graphene between hexagonal boron nitride sheets, by external electric fields. Using density functional theory, we show that the gap is continuously tunable from 0 to 0.2 eV, and is robust to stacking disorder. Moreover, boron nitride sheets do not alter the fundamental response from that of free-standing bilayer graphene, apart from additional screening. The calculations suggest that the graphene-boron nitride heterostructures could provide a viable route to graphene-based electronic devices.

cond-mat.mtrl-sci