arXiv subjects

Dries Van Thourhout

Publications and source records attributed to Dries Van Thourhout.

25 records · Page 2Linked to original sources

arXiv2016

Thermal Brillouin noise observed in silicon optomechanical waveguide

Stimulated Brillouin scattering was recently observed in nanoscale silicon waveguides. Surprisingly, thermally-driven photon-phonon conversion in these structures had not yet been reported. Here, we inject an optical probe in a suspended silicon waveguide and measure its phase fluctuations at the output. We observe mechanical resonances around 8 GHz with a scattering efficiency of $10^{-5} \, \text{m}^{-1}$ and a signal-to-noise ratio of 2. The observations are in agreement with a theory of noise in these waveguides as well as with stimulated measurements. Our scheme may simplify measurements of mechanical signatures in nanoscale waveguides and is a step towards a better grasp of thermal noise in these new continuum optomechanical systems.

physics.optics↗

arXiv2016

Unifying Brillouin scattering and cavity optomechanics

So far, Brillouin scattering and cavity optomechanics were mostly disconnected branches of research -- although both deal with photon-phonon coupling. This begs for the development of a broader theory that contains both fields. Here, we derive the dynamics of optomechanical cavities from that of Brillouin-active waveguides. This explicit transition elucidates the link between phenomena such as Brillouin amplification and electromagnetically induced transparency. It proves that effects familiar from cavity optomechanics all have traveling-wave partners, but not vice versa. We reveal a close connection between two parameters of central importance in these fields: the Brillouin gain coefficient and the zero-point optomechanical coupling rate. This enables comparisons between systems as diverse as ultracold atom clouds, plasmonic Raman cavities and nanoscale silicon waveguides. In addition, back-of-the-envelope calculations show that unobserved effects, such as photon-assisted amplification of traveling phonons, are now accessible in existing systems. Finally, we formulate both circuit- and cavity-oriented optomechanics in terms of vacuum coupling rates, cooperativities and gain coefficients, thus reflecting the similarities in the underlying physics.

physics.optics↗

arXiv2015

Net on-chip Brillouin gain based on suspended silicon nanowires

The century-old study of photon-phonon coupling has seen a remarkable revival in the past decade. Driven by early observations of dynamical back-action, the field progressed to ground-state cooling and the counting of individual phonons. A recent branch investigates the potential of traveling-wave, optically broadband photon-phonon interaction in silicon circuits. Here, we report continuous-wave Brillouin gain exceeding the optical losses in a series of suspended silicon beams, a step towards selective on-chip amplifiers. We obtain efficiencies up to $10^{4} \, \text{W}^{-1}\text{m}^{-1}$, the highest to date in the phononic gigahertz range. We also find indications that geometric disorder poses a significant challenge towards nanoscale phonon-based technologies.

physics.optics↗

arXiv2015

Room Temperature InP DFB Laser Array Directly Grown on (001) Silicon

Fully exploiting the silicon photonics platform requires a fundamentally new approach to realize high-performance laser sources that can be integrated directly using wafer-scale fabrication methods. Direct band gap III-V semiconductors allow efficient light generation but the large mismatch in lattice constant, thermal expansion and crystal polarity makes their epitaxial growth directly on silicon extremely complex. Here, using a selective area growth technique in confined regions, we surpass this fundamental limit and demonstrate an optically pumped InP-based distributed feedback (DFB) laser array grown on (001)-Silicon operating at room temperature and suitable for wavelength-division-multiplexing applications. The novel epitaxial technology suppresses threading dislocations and anti-phase boundaries to a less than 20nm thick layer not affecting the device performance. Using an in-plane laser cavity defined by standard top-down lithographic patterning together with a high yield and high uniformity provides scalability and a straightforward path towards cost-effective co-integration with photonic circuits and III-V FINFET logic.

physics.optics↗

arXiv2014

Interaction between light and highly confined hypersound in a silicon photonic nanowire

In the past decade, there has been a surge in research at the boundary between photonics and phononics. Most efforts centered on coupling light to motion in a high-quality optical cavity, typically geared towards observing the quantum state of a mechanical oscillator. It was recently predicted that the strength of the light-sound interaction would increase drastically in nanoscale silicon photonic wires. Here we demonstrate, for the first time, such a giant overlap between near-infrared light and gigahertz sound co-localized in a small-core silicon wire. The wire is supported by a tiny pillar to block the path for external phonon leakage, trapping $\mathbf{10} \; \textbf{GHz}$ phonons in an area below $\mathbf{0.1 \; \boldsymbolμ}\textbf{m}^{\mathbf{2}}$. Since our geometry can be coiled up to form a ring cavity, it paves the way for complete fusion between the worlds of cavity optomechanics and Brillouin scattering. The result bodes well for the realization of low-footprint optically-pumped lasers/sasers and delay lines on a densely integrated silicon chip.

physics.optics↗

arXiv2013

Analysis of enhanced stimulated Brillouin scattering in silicon slot waveguides

Stimulated Brillouin scattering has attracted renewed interest with the promise of highly tailorable integration into the silicon photonics platform. However, significant Brillouin amplification in silicon waveguides has yet to be shown. In an effort to engineer a structure with large photon-phonon coupling, we analyzed both forward and backward Brillouin scattering in high-index-contrast silicon slot waveguides. The calculations predict that gradient forces enhance the Brillouin gain in narrow slots. We estimate a currently feasible gain of about $10^{5} \, \text{W}^{-1}\text{m}^{-1}$, which is an order of magnitude larger than in a stand-alone silicon wire. Such efficient coupling could enable a host of Brillouin technologies on a mass-producible silicon chip.

cond-mat.mes-hall↗

arXiv2011

On-chip parametric amplification with 26.5~dB gain at telecommunication wavelengths using CMOS-compatible hydrogenated amorphous silicon waveguides

We present the first study of parametric amplification in hydrogenated amorphous silicon waveguides. Broadband on/off amplification up to 26.5~dB at telecom wavelength is reported. Measured nonlinear parameter is 770~$\textrm{W}^{-1} \textrm{m}^{-1}$, nonlinear absorption 28~$\textrm{W}^{-1} \textrm{m}^{-1}$, bandgap $1.61$~eV.

physics.optics↗