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E. Alfinito

Publications and source records attributed to E. Alfinito.

At least 37 records · Page 2Linked to original sources
arXiv2005

Non-Gaussian Fluctuations in Biased Resistor Networks: Size Effects versus Universal Behavior

We study the distribution of the resistance fluctuations of biased resistor networks in nonequilibrium steady states. The stationary conditions arise from the competition between two stochastic and biased processes of breaking and recovery of the elementary resistors. The fluctuations of the network resistance are calculated by Monte Carlo simulations which are performed for different values of the applied current, for networks of different size and shape and by considering different levels of intrinsic disorder. The distribution of the resistance fluctuations generally exhibits relevant deviations from Gaussianity, in particular when the current approaches the threshold of electrical breakdown. For two-dimensional systems we have shown that this non-Gaussianity is in general related to finite size effects, thus it vanishes in the thermodynamic limit, with the remarkable exception of highly disordered networks. For these systems, close to the critical point of the conductor-insulator transition, non-Gaussianity persists in the large size limit and it is well described by the universal Bramwell-Holdsworth-Pinton distribution. In particular, here we analyze the role of the shape of the network on the distribution of the resistance fluctuations. Precisely, we consider quasi-one-dimensional networks elongated along the direction of the applied current or trasversal to it. A significant anisotropy is found for the properties of the distribution. These results apply to conducting thin films or wires with granular structure stressed by high current densities.

cond-mat.stat-mech↗
arXiv2004

Non-Gaussian Resistance Fluctuations in Disordered Materials

We study the distribution of resistance fluctuations of conducting thin films with different levels of internal disorder. The film is modeled as a resistor network in a steady state determined by the competition between two biased processes, breaking and recovery of the elementary resistors. The fluctuations of the film resistance are calculated by Monte Carlo simulations which are performed under different bias conditions, from the linear regime up to the threshold for electrical breakdown. Depending on the value of the external current, on the level of disorder and on the size of the system, the distribution of the resistance fluctuations can exhibit significant deviations from Gaussianity. As a general trend, a size dependent, non universal distribution is found for systems with low and intermediate disorder. However, for strongly disordered systems, close to the critical point of the conductor-insulator transition, the non-Gaussianity persists when the size is increased and the distribution of resistance fluctuations is well described by the universal Bramwell-Holdsworth-Pinton distribution.

cond-mat.dis-nn↗
arXiv2004

Fluctuations of Complex Networks: Electrical Properties of Single Protein Nanodevices

We present for the first time a complex network approach to the study of the electrical properties of single protein devices. In particular, we consider an electronic nanobiosensor based on a G-protein coupled receptor. By adopting a coarse grain description, the protein is modeled as a complex network of elementary impedances. The positions of the alpha-carbon atoms of each amino acid are taken as the nodes of the network. The amino acids are assumed to interact electrically among them. Consequently, a link is drawn between any pair of nodes neighboring in space within a given distance and an elementary impedance is associated with each link. The value of this impedance can be related to the physical and chemical properties of the amino acid pair and to their relative distance. Accordingly, the conformational changes of the receptor induced by the capture of the ligand, are translated into a variation of its electrical properties. Stochastic fluctuations in the value of the elementary impedances of the network, which mimic different physical effects, have also been considered. Preliminary results concerning the impedance spectrum of the network and its fluctuations are presented and discussed for different values of the model parameters.

q-bio.MN↗
arXiv2004

A Biased Resistor Network Model for Electromigration Failure and Related Phenomena in Metallic Lines

Electromigration phenomena in metallic lines are studied by using a biased resistor network model. The void formation induced by the electron wind is simulated by a stochastic process of resistor breaking, while the growth of mechanical stress inside the line is described by an antagonist process of recovery of the broken resistors. The model accounts for the existence of temperature gradients due to current crowding and Joule heating. Alloying effects are also accounted for. Monte Carlo simulations allow the study within a unified theoretical framework of a variety of relevant features related to the electromigration. The predictions of the model are in excellent agreement with the experiments and in particular with the degradation towards electrical breakdown of stressed Al-Cu thin metallic lines. Detailed investigations refer to the damage pattern, the distribution of the times to failure (TTFs), the generalized Black's law, the time evolution of the resistance, including the early-stage change due to alloying effects and the electromigration saturation appearing at low current densities or for short line lengths. The dependence of the TTFs on the length and width of the metallic line is also well reproduced. Finally, the model successfully describes the resistance noise properties under steady state conditions.

cond-mat.stat-mech↗
arXiv2004

Non-Gaussian Resistance Noise near Electrical Breakdown in Granular Materials

The distribution of resistance fluctuations of conducting thin films with granular structure near electrical breakdown is studied by numerical simulations. The film is modeled as a resistor network in a steady state determined by the competition between two biased processes, breaking and recovery. Systems of different sizes and with different levels of internal disorder are considered. Sharp deviations from a Gaussian distribution are found near breakdown and the effect increases with the degree of internal disorder. However, we show that in general this non-Gaussianity is related to the finite size of the system and vanishes in the large size limit. Nevertheless, near the critical point of the conductor-insulator transition, deviations from Gaussianity persist when the size is increased and the distribution of resistance fluctuations is well fitted by the universal Bramwell-Holdsworth-Pinton distribution.

cond-mat.stat-mech↗
arXiv2003

Non-Gaussianity of resistance fluctuations near electrical breakdown

We study the resistance fluctuation distribution of a thin film near electrical breakdown. The film is modeled as a stationary resistor networkunder biased percolation. Depending on the value of the external current,on the system sizes and on the level of internal disorder, the fluctuation distribution can exhibit a non-Gaussian behavior. We analyze this non-Gaussianity in terms of the generalized Gumbel distribution recently introduced in the context of highly correlated systems near criticality. We find that when the average fraction of defects approaches the random percolation threshold, the resistance fluctuation distribution is well described by the universal behavior of the Bramwell-Holdsworth-Pinton distribution.

cond-mat↗
arXiv2002

Quantum models related to fouled Hamiltonians of the harmonic oscillator

We study a pair of canonoid (fouled) Hamiltonians of the harmonic oscillator which provide, at the classical level, the same equation of motion as the conventional Hamiltonian. These Hamiltonians, say $K_{1}$ and $K_{2}$, result to be explicitly time-dependent and can be expressed as a formal rotation of two cubic polynomial functions, $H_{1}$ and $H_{2}$, of the canonical variables (q,p). We investigate the role of these fouled Hamiltonians at the quantum level. Adopting a canonical quantization procedure, we construct some quantum models and analyze the related eigenvalue equations. One of these models is described by a Hamiltonian admitting infinite self-adjoint extensions, each of them has a discrete spectrum on the real line. A self-adjoint extension is fixed by choosing the spectral parameter $ε$ of the associated eigenvalue equation equal to zero. The spectral problem is discussed in the context of three different representations. For $ε=0$, the eigenvalue equation is exactly solved in all these representations, in which square-integrable solutions are explicity found. A set of constants of motion corresponding to these quantum models is also obtained. Furthermore, the algebraic structure underlying the quantum models is explored. This turns out to be a nonlinear (quadratic) algebra, which could be applied for the determination of approximate solutions to the eigenvalue equations.

quant-ph↗
arXiv2002

Resistance and Resistance Fluctuations in Random Resistor Networks Under Biased Percolation

We consider a two-dimensional random resistor network (RRN) in the presence of two competing biased percolations consisting of the breaking and recovering of elementary resistors. These two processes are driven by the joint effects of an electrical bias and of the heat exchange with a thermal bath. The electrical bias is set up by applying a constant voltage or, alternatively, a constant current. Monte Carlo simulations are performed to analyze the network evolution in the full range of bias values. Depending on the bias strength, electrical failure or steady state are achieved. Here we investigate the steady-state of the RRN focusing on the properties of the non-Ohmic regime. In constant voltage conditions, a scaling relation is found between $ / _0$ and $V/V_0$, where $ $ is the average network resistance, $ _0$ the linear regime resistance and $V_0$ the threshold value for the onset of nonlinearity. A similar relation is found in constant current conditions. The relative variance of resistance fluctuations also exhibits a strong nonlinearity whose properties are investigated. The power spectral density of resistance fluctuations presents a Lorentzian spectrum and the amplitude of fluctuations shows a significant non-Gaussian behavior in the pre-breakdown region. These results compare well with electrical breakdown measurements in thin films of composites and of other conducting materials.

cond-mat↗
arXiv2002

Linear and nonlinear regime of a Random Resistor Network under biased percolation

We investigate the steady state of a two-dimensional random resistor network subjected to two competing biased percolations as a function of the bias strength. The properties of the linear and nonlinear regimes are studied by means of Monte Carlo simulations. In constant current conditions, a scaling relation is found between $ / _0$ and $I/I_0$, where $ $ is the average network resistance, $ _0$ the Ohmic resistance and $I_0$ an appropriate threshold value for the onset of nonlinearity. A similar scaling relation is found also for the relative variance of resistance fluctuations. These results are in good agreement with electrical breakdown measurements performed in composite materials.

cond-mat.stat-mech↗
arXiv2002

Domain formation in noninstantaneous symmetry breaking phase transitions

In the framework of the Ginzburg-Landau harmonic potential approximation, we present a possible modeling of the time-dependence of the frequency of the order parameter mode suitable to account for the formation of correlated domains in non-instantaneous symmetry breaking phase transitions. An interesting spectrum of possibilities for the size and the life-time of these domains emerges, which appears to be consistent with the conclusions of other, differently grounded analysis.

cond-mat↗
arXiv2001

Monte Carlo simulation of electromigration phenomena in metallic lines

The electromigration (EM) of metallic lines is studied in terms of competition between two percolative processes taking place in a random resistor network. The effects associated with the transport of mass and with the consequent growth of the internal stress are accounted for by stochastic generation and recovery of voids, driven by the external current. Monte Carlo simulations enable us to investigate within a unified theoretical framework a variety of relevant aspects of EM degradation as: damage patterns, the distribution of the time to failures, early stage resistance change in the presence of compositional effects, Black's law, geometrical effects, etc. A general agreement is found with the experimental findings.

cond-mat↗
arXiv2001

Stationary Regime of Random Resistor Networks Under Biased Percolation

The state of a 2-D random resistor network, resulting from the simultaneous evolutions of two competing biased percolations, is studied in a wide range of bias values. Monte Carlo simulations show that when the external current $I$ is below the threshold value for electrical breakdown, the network reaches a steady state with a nonlinear current-voltage characteristic. The properties of this nonlinear regime are investigated as a function of different model parameters. A scaling relation is found between $ / _0$ and $I/I_0$, where $ $ is the average resistance, $ _0$ the linear regime resistance and $I_0$ the threshold value for the onset of nonlinearity. The scaling exponent is found to be independent of the model parameters. A similar scaling behavior is also found for the relative variance of resistance fluctuations. These results compare well with resistance measurements in composite materials performed in the Joule regime up to breakdown.

cond-mat.stat-mech↗
arXiv2001

On topological defect formation in the process of symmetry breaking phase transitions

By resorting to some results in quantum field theories with spontaneous breakdown of symmetry we show that an explanation based on microscopic dynamics can be given of the fact that topological defect formation is observed during the process of non-equilibrium phase transitions characterized by a non-zero order parameter. We show that the Nambu-Goldstone particle acquires an effective non-zero mass due to the boundary (finite volume) effects and this is related with the size of the defect. We also relate such volume effect with temperature effect.

cond-mat↗
arXiv2000

Formation and life-time of memory domains in the dissipative quantum model of brain

We show that in the dissipative quantum model of brain the time-dependence of the frequencies of the electrical dipole wave quanta leads to the dynamical organization of the memories in space (i.e. to their localization in more or less diffused regions of the brain) and in time (i.e. to their longer or shorter life-time). The life-time and the localization in domains of the memory states also depend on internal parameters and on the number of links that the brain establishes with the external world. These results agree with the physiological observations of the dynamic formation of neural circuitry which grows as brain develops and relates to external world.

quant-ph↗
arXiv1998

Canonical Quantization and Expanding Metrics

The canonical formalism for expanding metrics scenarios is presented. Non-unitary time evolution implied by expanding geometry is described as a trajectory over unitarily inequivalent representations at different times of the canonical commutation relations. Thermal properties of inflating Universe are also discussed.

gr-qc↗
arXiv1997

Equations of the reaction-diffusion type with a loop algebra structure

A system of equations of the reaction-diffusion type is studied in the framework of both the direct and the inverse prolongation structure. We find that this system allows an incomplete prolongation Lie algebra, which is used to find the spectral problem and a whole class of nonlinear field equations containing the original ones as a special case.

solv-int↗