arXiv subjects

E. Bielejec

Publications and source records attributed to E. Bielejec.

13 recordsLinked to original sources

arXiv2022

Measurement and Simulation of the Magnetic Fields from a 555 Timer Integrated Circuit using a Quantum Diamond Microscope and Finite Element Analysis

Quantum Diamond Microscope (QDM) magnetic field imaging is an emerging interrogation and diagnostic technique for integrated circuits (ICs). To date, the ICs measured with a QDM were either too complex for us to predict the expected magnetic fields and benchmark the QDM performance, or were too simple to be relevant to the IC community. In this paper, we establish a 555 timer IC as a "model system" to optimize QDM measurement implementation, benchmark performance, and assess IC device functionality. To validate the magnetic field images taken with a QDM, we used a SPICE electronic circuit simulator and Finite Element Analysis (FEA) to model the magnetic fields from the 555 die for two functional states. We compare the advantages and the results of three IC-diamond measurement methods, confirm that the measured and simulated magnetic images are consistent, identify the magnetic signatures of current paths within the device, and discuss using this model system to advance QDM magnetic imaging as an IC diagnostic tool.

physics.ins-det↗

arXiv2019

New Technologies for Discovery

For the field of high energy physics to continue to have a bright future, priority within the field must be given to investments in the development of both evolutionary and transformational detector development that is coordinated across the national laboratories and with the university community, international partners and other disciplines. While the fundamental science questions addressed by high energy physics have never been more compelling, there is acute awareness of the challenging budgetary and technical constraints when scaling current technologies. Furthermore, many technologies are reaching their sensitivity limit and new approaches need to be developed to overcome the currently irreducible technological challenges. This situation is unfolding against a backdrop of declining funding for instrumentation, both at the national laboratories and in particular at the universities. This trend has to be reversed for the country to continue to play a leadership role in particle physics, especially in this most promising era of imminent new discoveries that could finally break the hugely successful, but limited, Standard Model of fundamental particle interactions. In this challenging environment it is essential that the community invest anew in instrumentation and optimize the use of the available resources to develop new innovative, cost-effective instrumentation, as this is our best hope to successfully accomplish the mission of high energy physics. This report summarizes the current status of instrumentation for high energy physics, the challenges and needs of future experiments and indicates high priority research areas.

physics.ins-det↗

arXiv2017

Ion Implantation for Deterministic Single Atom Devices

We demonstrate a capability of deterministic doping at the single atom level using a combination of direct write focused ion beam and solid-state ion detectors. The focused ion beam system can position a single ion to within 35 nm of a targeted location and the detection system is sensitive to single low energy heavy ions. This platform can be used to deterministically fabricate single atom devices in materials where the nanostructure and ion detectors can be integrated, including donor-based qubits in Si and color centers in diamond.

cond-mat.mes-hall↗

arXiv2017

Electroforming-Free TaOx Memristors using Focused Ion Beam Irradiations

We demonstrate creation of electroforming-free TaOx memristive devices using focused ion beam irradiations to locally define conductive filaments in TaOx films. Electrical characterization shows that these irradiations directly create fully functional memristors without the need for electroforming. Ion beam forming of conductive filaments combined with state-of-the-art nano-patterning presents a CMOS compatible approach to wafer level fabrication of fully formed and operational memristors.

physics.app-ph↗

arXiv2015

Silicon Quantum Dots with Counted Antimony Donor Implants

Deterministic control over the location and number of donors is crucial to donor spin quantum bits (qubits) in semiconductor based quantum computing. In this work, a focused ion beam is used to implant antimony donors close to quantum dots. Ion detectors are integrated next to the quantum dots to sense the implants. The numbers of donors implanted can be counted to a precision of a single ion. In low-temperature transport measurements, regular coulomb blockade is observed from the quantum dots. Charge offsets indicative of donor ionization are also observed in devices with counted donor implants.

cond-mat.mes-hall↗

arXiv2009

Single ion implantation for single donor devices using Geiger mode detectors

Electronic devices that are designed to use the properties of single atoms such as donors or defects have become a reality with recent demonstrations of donor spectroscopy, single photon emission sources, and magnetic imaging using defect centers in diamond. Improving single ion detector sensitivity is linked to improving control over the straggle of the ion as well as providing more flexibility in lay-out integration with the active region of the single donor device construction zone by allowing ion sensing at potentially greater distances. Using a remotely located passively gated single ion Geiger mode avalanche diode (SIGMA) detector we have demonstrated 100% detection efficiency at a distance of >75 um from the center of the collecting junction. This detection efficiency is achieved with sensitivity to ~600 or fewer electron-hole pairs produced by the implanted ion. Ion detectors with this sensitivity and integrated with a thin dielectric, for example 5 nm gate oxide, using low energy Sb implantation would have an end of range straggle of <2.5 nm. Significant reduction in false count probability is achieved by modifying the ion beam set-up to allow for cryogenic operation of the SIGMA detector. Using a detection window of 230 ns at 1 Hz, the probability of a false count was measured as 1E-1 and 1E-4 for operation temperatures of 300K and 77K, respectively. Low temperature operation and reduced false, dark, counts are critical to achieving high confidence in single ion arrival. For the device performance in this work, the confidence is calculated as a probability of >98% for counting one and only one ion for a false count probability of 1E-4 at an average ion number per gated window of 0.015.

cond-mat.mes-hall↗

arXiv2005

Measuring the Localization Length through the superconductor-insulator transition in ultrathin amorphous beryllium films

Electron transport and tunneling across the superconductor-insulator (SI) transition have been measured simultaneously for quench-condensed ultrathin amorphous beryllium films. The anomalous negative magnetoresistance previously observed in insulating films disappears when Mn impurities are introduced to the films, restoring a rather clean Efros-Shklovskii type hopping behavior. The combination of transport and tunneling data allows us to determine, independently and up to a constant on the order of unity, the localization length, ξ_{L}, and the dielectric constant, κ, for the films. As the normal-state sheet resistance of the films at 20 K is reduced with increasing film thickness, ξ_{L} increases exponentially. The SI transition occurs when ξ_{L} crosses the Ginzburg-Landau coherence length, ξ_{S}.

cond-mat.supr-con↗

arXiv2005

Measurement of the Localization Length through the superconductor-insulator transition of ultrathin amorphous beryllium films

Based on the Efros-Shklovskii behavior observed in electron transport and tunneling, we have determined, independently and up to a constant on the order of unity, the localization length and the dielectric constant for quench-condensed ultrathin amorphous beryllium films. As the normal-state sheet resistance of the films at 20 K is reduced with increasing film thickness, the localization length increases exponentially. The superconductor-insulator transition occurs when the localization length crosses the Ginzburg-Landau coherence length. We discuss the implication of these results on a number of issues regarding superconductivity in the strongly disordered regime.

cond-mat.supr-con↗

arXiv2004

Tunneling and nonlinear transport in a vertically coupled GaAs/AlGaAs double quantum wire system

We report low-dimensional tunneling in an independently contacted vertically coupled quantum wire system. This nanostructure is fabricated in a high quality GaAs/AlGaAs parallel double quantum well heterostructure. Using a novel flip chip technique to align top and bottom split gates to form low-dimensional constrictions in each of the independently contacted quantum wells we explicitly control the subband occupation of the individual wires. In addition to the expected 2D-2D tunneling results, we have found additional tunneling features that are related to the 1D quantum wires.

cond-mat.mes-hall↗

arXiv2001

The Field-Tuned Superconductor-Insulator Transition with and without Current Bias

The magnetic-field-tuned superconductor-insulator transition has been studied in ultrathin Beryllium films quench-condensed near 20 K. In the zero-current limit, a finite-size scaling analysis yields the scaling exponent product vz = 1.35 +/- 0.10 and a critical sheet resistance R_{c} of about 1.2R_{Q}, with R_{Q} = h/4e^{2}. However, in the presence of dc bias currents that are smaller than the zero-field critical currents, vz becomes 0.75 +/- 0.10. This new set of exponents suggests that the field-tuned transitions with and without dc bias currents belong to different universality classes.

cond-mat.supr-con↗

arXiv2001

Electron Glass in Ultrathin Granular Al Films at Low Temperatures

Quench-condensed granular Al films, with normal-state sheet resistance close to 10 k$Ω/\Box$, display strong hysteresis and ultraslow, non-exponential relaxation in the resistance when temperature is varied below 300 mK. The hysteresis is nonlinear and can be suppressed by a dc bias voltage. The relaxation time does not obey the Arrhenius form, indicating the existence of a broad distribution of low energy barriers. Furthermore, large resistance fluctuations, having a 1/f-type power spectrum with a low-frequency cut-off, are observed at low temperatures. With decreasing temperature, the amplitude of the fluctuation increases and the cut-off frequency decreases. These observations combine to provide a coherent picture that there exists a new glassy electron state in ultrathin granular Al films, with a growing correlation length at low temperatures.

cond-mat.str-el↗

arXiv2000

Anisotropic Magnetoconductance in Quench-Condensed Ultrathin Beryllium Films

Near the superconductor-insulator (S-I) transition, quench-condensed ultrathin Be films show a large magnetoconductance which is highly anisotropic in the direction of the applied field. Film conductance can drop as much as seven orders of magnitude in a weak perpendicular field (< 1 T), but is insensitive to a parallel field in the same field range. We believe that this negative magnetoconductance is due to the field de-phasing of the superconducting pair wavefunction. This idea enables us to extract the finite superconducting phase coherence length in nearly superconducting films. Our data indicate that this local phase coherence persists even in highly insulating films in the vicinity of the S-I transition.

cond-mat.dis-nn↗

arXiv2000

Observation of a Hard Correlation Gap in Quench-Condensed Ultrathin Beryllium

We report on the tunneling density of states (DOS) in ultrathin and strongly disordered Be films quench-condensed at 20 K. Above 5 K, the DOS shows the well-known logarithmic anomaly at the Fermi level. Only in a narrow temperature range near 2 K is the DOS linearly dependent on energy, as predicted by Efros and Shklovskii. However, both the zero-bias conductance and the slope of the linear DOS are found to decrease drastically with decreasing temperature. Tunneling measurements at mK temperatures have revealed conclusively that a hard correlation gap opens up in the DOS.

cond-mat.str-el↗