arXiv subjects

E. Janod

Publications and source records attributed to E. Janod.

15 recordsLinked to original sources

arXiv2026

Anisotropy of Ultrafast Strain in $V_2O_3$ Thin Films: Out-of-Equilibrium Phase Transitions under Interfacial Clamping

Ultrafast photoinduced insulator-to-metal transitions in correlated materials are often mediated by lattice distortions, yet the role of interfacial lattice constraints in shaping nonequilibrium pathways remains largely unexplored. We use azimuth-resolved time-resolved X-ray diffraction to track orientation-dependent strain dynamics in granular V$_2$O$_3$ thin films on c-cut sapphire, where thermal-expansion mismatch imposes anisotropic interfacial strain. Across the thermal transition, the azimuthal profile of the (110)$_H$ strain inverts curvature, providing direct evidence of partial clamping of the hexagonal basal-plane lattice (a$_H$,b$_H$). After photoexcitation of the antiferromagnetic insulating phase, the structural response remains clamp-limited: weakly constrained grain families reach the full basal-plane contraction characteristic of the metallic-like state, whereas strongly constrained families exhibit a strongly reduced distortion. Fluence-dependent measurements further disentangle transformed fraction from clamping-limited lattice distortion. Our results show that interfacial clamping acts as a static selector for ultrafast phase switching and provide a general route to quantify anisotropic strain dynamics in heterostructures.

cond-mat.mtrl-sci↗

arXiv2021

Lattice contraction induced by resistive switching in chromium-doped V2O3: a hallmark of Mott physics

Since the beginnings of the electronic age, a quest for ever faster and smaller switches has been initiated, since this element is ubiquitous and foundational in any electronic circuit to regulate the flow of current. Mott insulators are promising candidates to meet this need as they undergo extremely fast resistive switching under electric field. However the mechanism of this transition is still under debate. Our spatially-resolved {\mu}-XRD imaging experiments carried out on the prototypal Mott insulator (V0.95Cr0.05)2O3 show that the resistive switching is associated with the creation of a conducting filamentary path consisting in an isostructural compressed phase without any chemical nor symmetry change. This clearly evidences that the resistive switching mechanism is inherited from the bandwidth-controlled Mott transition. This discovery might hence ease the development of a new branch of electronics dubbed Mottronics.

cond-mat.str-el↗

arXiv2020

Strain Wave Pathway to Semiconductor-to-Metal Transition revealed by time resolved X-ray powder diffraction

Thanks to the remarkable developments of ultrafast science, one of today's challenges is to modify material state by controlling with a light pulse the coherent motions that connect two different phases. Here we show how strain waves, launched by electronic and structural precursor phenomena, determine a macroscopic transformation pathway for the semiconducting-to-metal transition with large volume change in bistable Ti$_3$O$_5$ nanocrystals. Femtosecond powder X-ray diffraction allowed us to quantify the structural deformations associated with the photoinduced phase transition on relevant time scales. We monitored the early intra-cell distortions around absorbing metal dimers, but also long range crystalline deformations dynamically governed by acoustic waves launched at the laser-exposed Ti$_3$O$_5$ surface. We rationalize these observations with a simplified elastic model, demonstrating that a macroscopic transformation occurs concomitantly with the propagating acoustic wavefront on the picosecond timescale, several decades earlier than the subsequent thermal processes governed by heat diffusion.

cond-mat.mtrl-sci↗

arXiv2017

Watching the birth of a charge density wave order: diffraction study on nanometer-and picosecond-scales

Femtosecond time-resolved X-ray diffraction is used to study a photo-induced phase transition between two charge density wave (CDW) states in 1T-TaS$_2$, namely the nearly commensurate (NC) and the incommensurate (I) CDW states. Structural modulations associated with the NC-CDW order are found to disappear within 400 fs. The photo-induced I-CDW phase then develops through a nucleation/growth process which ends 100 ps after laser excitation. We demonstrate that the newly formed I-CDW phase is fragmented into several nanometric domains that are growing through a coarsening process. The coarsening dynamics is found to follow the universal Lifshitz-Allen-Cahn growth law, which describes the ordering kinetics in systems exhibiting a non-conservative order parameter.

cond-mat.str-el↗

arXiv2014

First-Order Insulator-to-Metal Mott Transition in the Paramagnetic 3D System GaTa4Se8

The nature of the Mott transition in the absence of any symmetry braking remains a matter of debate. We study the correlation-driven insulator-to-metal transition in the prototypical 3D Mott system GaTa4Se8, as a function of temperature and applied pressure. We report novel experiments on single crystals, which demonstrate that the transition is of first order and follows from the coexistence of two states, one insulating and one metallic, that we toggle with a small bias current. We provide support for our findings by contrasting the experimental data with calculations that combine local density approximation with dynamical mean-field theory, which are in very good agreement.

cond-mat.str-el↗

arXiv2014

Non thermal and purely electronic resistive transition in narrow gap Mott insulators

Mott insulator to metal transitions under electric field are currently the subject of numerous fundamental and applied studies. This puzzling effect, which involves non-trivial out-of-equilibrium effects in correlated systems, is indeed at play in the operation of a new class of electronic memories, the Mott memories. However the combined electronic and thermal effects are difficult to disentangle in Mott insulators undergoing such transitions. We report here a comparison between the properties under electric field of a canonical Mott insulator and a model built on a realistic 2D resistor network able to capture both thermal effects and electronic transitions. This comparison made specifically on the family of narrow gap Mott insulators AM4Q8, (A = Ga or Ge; M=V, Nb or Ta, and Q = S or Se) unambiguously establishes that the resistive transition experimentally observed under electric field arises from a purely electronic mechanism.

cond-mat.str-el↗

arXiv2013

Ultrafast filling of an electronic pseudogap in an incommensurate crystal

We investigate the quasiperiodic crystal (LaS)1.196(VS2) by angle and time resolved photoemission spectroscopy. The dispersion of electronic states is in qualitative agreement with band structure calculated for the VS2 slab without the incommensurate distortion. Nonetheless, the spectra display a temperature dependent pseudogap instead of quasiparticles crossing. The sudden photoexcitation at 50 K induces a partial filling of the electronic pseudogap within less than 80 fs. The electronic energy flows into the lattice modes on a comparable timescale. We attribute this surprisingly short timescale to a very strong electron-phonon coupling to the incommensurate distortion. This result sheds light on the electronic localization arising in aperiodic structures and quasicrystals.

cond-mat.str-el↗

arXiv2012

Temperature driven Vanadium clusterization and band gap enlargement in the layered misfit compound (LaS)$_{1.196}$VS$_2$

Intriguing properties of the misfit layered chalcogenide (LaS)$_{1.196}$VS$_2$ crystals were investigated by transport, optical measurements, angle-resolved photoemission (ARPES) and x-ray diffraction. Although no clear anomaly is found in transport properties as a function of temperature, a large spectral weight transfer, up to at least 1 eV, is observed by both optical and photoemission spectroscopies. ARPES reveals that a nearly filled band with negative curvature, close enough from the Fermi level at 300K to produce metallic-like behaviour as observed in optical conductivity spectra. At low temperature, the band structure is strongly modified, yielding to an insulating state with a optical gap of 120 meV. An accurate (3+1)D analysis of x-ray diffraction data shows that, although a phase transition does not occur, structural distortions increase as temperature is decreased, and vanadium clusterization is enhanced. We found that the changes of electronic properties and structure are intimately related. This indicates that structural distorsion play a major role in the insulating nature of (LaS)$_{1.196}$VS$_2$ and that electronic correlation may not be important, contrary to previous belief. These results shed a new light on the mechanism at the origin of non-linear electric properties observed in (LaS)$_{1.196}$VS$_2$.

cond-mat.str-el↗

arXiv2009

Electric Pulse Induced Resistive Switching, Electronic Phase Separation, and Possible Superconductivity in a Mott insulator

Metal-insulator transitions (MIT) belong to a class of fascinating physical phenomena, which includes superconductivity, and colossal magnetoresistance (CMR), that are associated with drastic modifications of electrical resistance. In transition metal compounds, MIT are often related to the presence of strong electronic correlations that drive the system into a Mott insulator state. In these systems the MIT is usually tuned by electron doping or by applying an external pressure. However, it was noted recently that a Mott insulator should also be sensitive to other external perturbations such as an electric field. We report here the first experimental evidence of a non-volatile electric-pulse-induced insulator-to-metal transition and possible superconductivity in the Mott insulator GaTa4Se8. Our Scanning Tunneling Microscopy experiments show that this unconventional response of the system to short electric pulses arises from a nanometer scale Electronic Phase Separation (EPS) generated in the bulk material.

cond-mat.str-el↗

arXiv2009

Electric field effects, Mott insulator, Surface patterning, Scanning tunneling microscopy, Transition metal chalcogenides

We report the first experimental evidence for a strong electromechanical coupling in the Mott insulator GaTa4Se8 allowing a highly reproducible nano-writing with a Scanning Tunneling Microscope (STM). The local electric field across the STM junction is observed to have a threshold value above which the clean (100) surface of GaTa4Se8 becomes mechanically instable: At voltage biases V > 1.1V the surface suddenly inflates and comes in contact with the STM tip, resulting in nanometer size craters. The formed pattern can be indestructibly "read" by STM at lower voltage bias, thus allowing a 5 Tdots/inch2 dense writing/reading at room temperature. The discovery of the electromechanical coupling in GaTa4Se8 might give new clues in the understanding of the Electric Pulse Induced Resistive Switching recently observed in this stoechiometric Mott insulator.

cond-mat.mtrl-sci↗

arXiv2002

Anomalous spectral weight in photoemission spectra of the hole doped Haldane chain Y2-xSrxBaNiO5

In this paper, we present photoemission experiments on the hole doped Haldane chain compound $Y_{2-x}Sr_xBaNiO_5$. By using the photon energy dependence of the photoemission cross section, we identified the symmetry of the first ionisation states (d type). Hole doping in this system leads to a significant increase in the spectral weight at the top of the valence band without any change in the vicinity of the Fermi energy. This behavior, not observed in other charge transfer oxides at low doping level, could result from the inhomogeneous character of the doped system and from a Ni 3d-O 2p hybridization enhancement due to the shortening of the relevant Ni-O distance in the localized hole-doped regions.

cond-mat.str-el↗

arXiv2001

Unconventional antiferromagnetic correlations of the doped Haldane gap system Y$_2$BaNi$_{1-x}$Zn$_x$O$_5$

We make a new proposal to describe the very low temperature susceptibility of the doped Haldane gap compound Y$_2$BaNi$_{1-x}$Zn$_x$O$_5$. We propose a new mean field model relevant for this compound. The ground state of this mean field model is unconventional because antiferromagnetism coexists with random dimers. We present new susceptibility experiments at very low temperature. We obtain a Curie-Weiss susceptibility $χ(T) \sim C / (Θ+T)$ as expected for antiferromagnetic correlations but we do not obtain a direct signature of antiferromagnetic long range order. We explain how to obtain the ``impurity'' susceptibility $χ_{imp}(T)$ by subtracting the Haldane gap contribution to the total susceptibility. In the temperature range [1 K, 300 K] the experimental data are well fitted by $T χ_{imp}(T) = C_{imp} (1 + T_{imp}/T )^{-γ}$. In the temperature range [100 mK, 1 K] the experimental data are well fitted by $T χ_{imp}(T) = A \ln{(T/T_c)}$, where $T_c$ increases with $x$. This fit suggests the existence of a finite Néel temperature which is however too small to be probed directly in our experiments. We also obtain a maximum in the temperature dependence of the ac-susceptibility $χ'(T)$ which suggests the existence of antiferromagnetic correlations at very low temperature.

cond-mat.str-el↗

arXiv2001

Random interactions and spin-glass thermodynamic transition in the hole-doped Haldane system Y$_{2-x}$Ca$_x$BaNiO$_5$

Magnetization, DC and AC bulk susceptibility of the $S$=1 Haldane chain system doped with electronic holes, Y$_{2-x}$Ca$_x$BaNiO$_5$ (0$\leq$x$\leq$0.20), have been measured and analyzed. The most striking results are (i) a sub-Curie power law behavior of the linear susceptibility, $χ(T)$$\sim $ $T$$^{-α}$, for temperature lower than the Haldane gap of the undoped compound (x=0) (ii) the existence of a spin-glass thermodynamic transition at $T$$_g$ = 2-3 K. These findings are consistent with (i) random couplings within the chains between the spin degrees of freedom induced by hole doping, (ii) the existence of ferromagnetic bonds that induce magnetic frustration when interchain interactions come into play at low temperature.

cond-mat.str-el↗

arXiv2000

Experimental evidence for a spin gap in the s=1/2 quantum antiferromagnet Cu$_2$(OH)$_2$CO$_3$

Magnetic properties of the natural mineral Cu$_2$(OH)$_2$CO$_3$ (malachite) were investigated through DC and AC susceptibility measurements. The analysis of the low-temperature part reveals a quantum spin-gap behavior with $Δ\approx 130 K$. Consistently with the crystal structure, the magnetic susceptibility can be accurately described by a model of alternating chain. The non-frustrating residual inter-chain magnetic couplings, describing a sort of dimerized square planar lattice, are not strong enough to push the system towards a long-range ordered ground state, in good agreement with recent theoretical studies.

cond-mat.str-el↗

arXiv2000

Evidence of quantum criticality in the doped Haldane system Y2BaNiO5

Experimental bulk susceptibility X(T) and magnetization M(H,T) of the S=1-Haldane chain system doped with nonmagnetic impurities, Y2BaNi1-xZnxO5 (x=0.04,0.06,0.08), are analyzed. A numerical calculation for the low-energy spectrum of non-interacting open segments describes very well experimental data above 4 K. Below 4 K, we observe power-law behaviors, X(T)=T^-alpha and M(H,T)/T^(1-alpha)=f(alpha,(H/T)), with alpha (<1) depending on the doping concentration x.This observation suggests the appearance of a gapless quantum phase due to a broad distribution of effective couplings between the dilution-induced moments.

cond-mat.str-el↗