arXiv subjects

E. Riccardi

Publications and source records attributed to E. Riccardi.

5 recordsLinked to original sources

arXiv2025

Highly-Linear Proximity-Based Bi-SQUID Operating above 4 K

We demonstrate a highly linear superconducting quantum interference device (SQUID) amplifier based on a double-loop (Bi-SQUID) architecture incorporating three superconductor-normal metal-superconductor (S-N-S) junctions. Fabricated using niobium-gold technology, the device exhibits robust operation at liquid helium temperatures, with a superconducting transition temperature of 8.5 K. The flux-to-voltage transfer function demonstrates sharp, symmetric, and highly linear behavior at temperatures up to 5 K. Bi-SQUIDs featuring our single-element S-N-S design represent an interesting and original approach to this field, as they demonstrate a numerically estimated spurious-free dynamic range (SFDR) linearity exceeding 60 dB, achieved in a single element, simplifying the requirements in terms of arrays containing hundreds of junctions. These results highlight the potential of proximity-based Bi-SQUIDs for compact, low-noise, and highly linear cryogenic amplifiers in quantum sensing, magnetometry, and biomedical diagnostics.

cond-mat.supr-con↗

arXiv2025

Biharmonic-Drive Tunable Josephson Diode

The superconducting diode effect has garnered significant interest due to its prospective applications in cryogenic electronics and computing, enabling directional supercurrent transport. This phenomenon has been demonstrated across various superconducting platforms, which typically necessitate unconventional materials with broken spatial symmetries or external magnetic fields, posing scalability and integration challenges. This work introduces an innovative method to realize the superconducting diode effect by disrupting spatiotemporal symmetries in a conventional Josephson junction utilizing a biharmonic alternating-current (AC) drive signal. We achieve wireless modulation of the diode's polarity and efficiency with an antenna. Our findings indicate a diode efficiency reaching the ideal $100%$ over a broad frequency range, with a temperature resilience of up to 800 mK, and efficient AC signal rectification. This versatile and platform-independent superconducting diode signifies a promising component for advancing future superconducting digital electronics, including efficient logic gates, ultrafast switches, and dynamic half-wave supercurrent rectifiers.

cond-mat.supr-con↗

arXiv2024

On the impact of VR/AR applications on optical transport networks: First experiments with Meta Quest 3 gaming and conferencing application

With the advent of next-generation AR/VR headsets, many of them with affordable prices, telecom operators have forecasted an explosive growth of traffic in their networks. Penetration of AR/VR services and applications is estimated to grow exponentially in the next few years. This work attempts to shed light on the bandwidth capacity requirements and latency of popular AR/VR applications with four different real experimental settings on the Meta Quest 3 headsets, and their potential impact on the network.

cs.NI↗

arXiv2020

Ultrasensitive Photoresponse of Graphene Quantum Dot in the Coulomb Blockade Regime to THz Radiation

Graphene quantum dots (GQDs) have recently attracted considerable attention, with appealing properties for terahertz (THz) technology. This includes the demonstration of large thermal bolometric effects in GQDs when illuminated by THz radiation. However, the interaction of THz photons with GQDs in the Coulomb blockade regime - single electron transport regime - remains unexplored. Here, we demonstrate the ultrasensitive photoresponse to THz radiation (from <0.1 to 10 THz) of a hBN-encapsulated GQD in the Coulomb blockade regime at low temperature (170 mK). We show that THz radiation of $\sim$10 pW provides a photocurrent response in the nanoampere range, resulting from a renormalization of the chemical potential of the GQD of $\sim$0.15 meV. We attribute this photoresponse to an interfacial photogating effect. Furthermore, our analysis reveals the absence of thermal effects, opening new directions in the study of coherent quantum effects at THz frequencies in GQDs.

cond-mat.mes-hall↗

arXiv2016

Gate dependent electronic Raman scattering in graphene

We report the direct observation of polarization resolved electronic Raman scattering in a gated monolayer graphene device. The evolution of the electronic Raman scattering spectra with gate voltage and its polarization dependence are in full agreement with theoretical expectations for non-resonant Raman processes involving interband electron-hole excitations across the Dirac cone. We further show that the spectral dependence of the electronic Raman scattering signal can be simply described by the dynamical polarizability of graphene in the long wavelength limit. The possibility to directly observe Dirac fermion excitations in graphene opens the way to promising Raman investigations of electronic properties of graphene and other 2D crystals.

cond-mat.mes-hall↗