arXiv subjects

E. V. Deviatov

Publications and source records attributed to E. V. Deviatov.

At least 73 records · Page 4Linked to original sources

arXiv2011

Energy transport by neutral collective excitations at the quantum Hall edge

We use the edge of the quantum Hall sample to study the possibility for counter-propagating neutral collective excitations. A novel sample design allows us to independently investigate charge and energy transport along the edge. We experimentally observe an upstream energy transfer with respect to the electron drift for the filling factors 1 and 1/3. Our analysis indicates that a neutral collective mode at the interaction-reconstructed edge is a proper candidate for the experimentally observed effect.

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arXiv2011

Non-local effects of edge excitations in the quantum Hall regime

We use a novel sample geometry to study non-local effects of edge excitations in the integer quantum Hall effect regime. We find that the condition of local equilibrium at the quantum Hall edge is affected by the diffusion of dynamically polarized nuclei. Our analysis indicates, that the nuclear diffusion is effectively one-dimensional in the present experiment.

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arXiv2010

Local investigation of the energy gap within the incompressible strip in the quantum Hall regime

We experimentally study the energy gap within the incompressible strip at local filling factor $ν_c=1$ at the quantum Hall edge for samples of very different mobilities. The obtained results indicate strong enhancement of the energy gap in comparison to the single-particle Zeeman splitting. We identify the measured gap as a mobility gap, so a pronounced experimental in-plane magnetic field dependence can both be attributed to the spin effects as well as to the change in the energy levels broadening.

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arXiv2009

Interference effects in transport across a single incompressible strip at the edge of the fractional quantum Hall system

We experimentally investigate interference effects in transport across a single incompressible strip at the edge of the quantum Hall system by using a Fabry-Perot type interferometer. We find the interference oscillations in transport across the incompressible strips with local filling factors $ν_c=1, 4/3, 2/3$ even at high imbalances, exceeding the spectral gaps. In contrast, there is no sign of the interference in transport across the principal Laughlin $ν_c=1/3$ incompressible strip. This indicates, that even at fractional $ν_c$, the interference effects are caused by "normal" electrons. The oscillation's period is determined by the effective interferometer area, which is sensitive to the filling factors because of screening effects.

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arXiv2008

Separately contacted edge states at high imbalance in the integer and fractional quantum Hall effect regime

This review presents experimental results on the inter-edge-state transport in the quantum Hall effect, mostly obtained in the regime of high imbalance. The application of a special geometry makes it possible to perform I-V spectroscopy between individual edge channels in both the integer and the fractional regime. This makes it possible to study in detail a number of physical effects such as the creation of topological defects in the integer quantum Hall effect and neutral collective modes excitation in fractional regime. The while many of the experimental findings are well explained within established theories of the quantum Hall effects, a number of observations give new insight into the local structure at the sample edge, which can serve as a starting point for further theoretical studies.

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arXiv2008

Experimental realization of a Fabry-Perot-type interferometer by co-propagating edge states in the quantum Hall regime

A Fabry-Perot-type interferometer is experimentally realized for electrons in a semiconductor device. A special experimental geometry creates interference conditions for co-propagating electrons in quantum Hall edge states, which results in oscillations of the current through the device. The visibility of these oscillations is found to increase at the high-field edge of the quantum Hall plateau.

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arXiv2007

Strongly enhanced effective mass in dilute two-dimensional electron systems: System-independent origin

We measure the effective mass in a dilute two-dimensional electron system in (111)-silicon by analyzing temperature dependence of the Shubnikov-de Haas oscillations in the low-temperature limit. A strong enhancement of the effective mass with decreasing electron density is observed. The mass renormalization as a function of the interaction parameter r_s is in good agreement with that reported for (100)-silicon, which shows that the relative mass enhancement is system- and disorder-independent being determined by electron-electron interactions only.

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arXiv2007

Manifestation of a complex edge excitation structure in the fractional quantum Hall regime at high filling factors

We experimentally study equilibration across the sample edge at high fractional filling factors 4/3, 5/3 under experimental conditions, which allow us to obtain high imbalance conditions. We find a lack of the full equilibration across the edge even in the flat-band situation, where no potential barrier survives at the sample edge. We interpret this result as the manifestation of complicated edge excitation structure at high fractional filling factors 4/3, 5/3. Also, a mobility gap in the $ν_c=1$ incompressible strip is determined in normal and tilted magnetic fields.

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arXiv2006

Equilibration between edge states in the fractional quantum Hall effect regime at high imbalances

We experimentally study equilibration between edge states, co-propagating at the edge of the fractional quantum Hall liquid, at high initial imbalances. We find an anomalous increase of the conductance between the fractional edge states at the filling factor $ν=2/5$ in comparison with the expected one for the model of independent edge states. We conclude that the model of independent fractional edge states is not suitable to describe the experimental situation at $ν=2/5$.

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arXiv2006

Evidence for the Luttigger liquid density of states in transport across the incompressible stripe at fractional filling factors

We experimentally investigate transport across the incompressible stripe at the sample edge in the fractional quantum Hall effect regime at bulk filling factors $ν=2/3$ and $ν=2/5$. We obtain the dependence of the equilibration length, that is a phenomenological characteristics of the transport, on the voltage imbalance and the temperature, at high voltage imbalances. These dependencies are found to be of the power-law form, which is a strong evidence for the Luttigger liquid density of states.

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arXiv2006

Spin ordering: two different scenarios for the single and double layer structures in the fractional and integer quantum Hall effect regimes

We investigate the ground state competition at the transition from the spin unpolarized to spin ordered phase at filling factor $ν=2/3$ in single layer heterostructure and at $ν=2$ in double layer quantum well. To trace the quantum Hall phase we use the minimum in the dissipative conductivity $σ_{xx}$. We observe two different transition scenarios in two investigated situations. For one of them we propose a qualitative explanation, based on the domain structure evolution in the vicinity of the transition point. The origin for the second scenario, corresponding to the experimental situation at $ν=2$ in double layer 2DES, still remains unclear.

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arXiv2006

Conductivity of a spin-polarized two-dimensional electron liquid in the ballistic regime

In the ballistic regime, the metallic temperature dependence of the conductivity in a two-dimensional electron system in silicon is found to change non-monotonically with the degree of spin polarization. In particular, it fades away just before the onset of complete spin polarization but reappears again in the fully spin-polarized state, being, however, suppressed relative to the zero-field case. Analysis of the degree of the suppression allows one to distinguish between the screening and the interaction-based theories.

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arXiv2005

Experimental investigation of the edge states structure at fractional filling factors

We experimentally study electron transport between edge states in the fractional quantum Hall effect regime. We find an anomalous increase of the transport across the 2/3 incompressible fractional stripe in comparison with theoretical predictions for the smooth edge potential profile. We interpret our results as a first experimental demonstration of the intrinsic structure of the incompressible stripes arising at the sample edge in the fractional quantum Hall effect regime.

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arXiv2005

Topological defects in the edge state structure in a bilayer electron system

We experimentally demonstrate, for the first time, formation of point-like topological defects in the edge state structure in the quantum Hall effect regime. By using of a selective population technique, we investigate equilibration processes between the edge states in bilayer electron structures with a high tunnelling rate between layers. Unexpected flattening of the I-V curves in perpendicular magnetic field at a specific filling factor combination and the recovery of the conventional nonlinear I-V characteristics in tilted fields give a strong evidence for the existence of topological defects.

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arXiv2004

Charge redistribution between cyclotron-resolved edge states at high imbalance

We use a quasi-Corbino sample geometry with independent contacts to different edge states in the quantum Hall effect regime to investigate a charge redistribution between cyclotron-split edge states at high imbalance. We also modify Buttiker formalism by introducing local transport characteristics in it and use this modified Buttiker picture to describe the experimental results. We find that charge transfer between cyclotron-split edge states at high imbalance can be described by a single parameter, which is a transferred between edge states portion of the available for transfer part of the electrochemical potential imbalance. This parameter is found to be independent of the particular sample characteristics, describing fundamental properties of the inter-edge-state scattering. From the experiment we obtain it in the dependence on the voltage imbalance between edge states and propose a qualitative explanation to the experimental findings.

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arXiv2004

Manifestation of the bulk phase transition in the edge energy spectrum in a two dimensional bilayer electron system

We use a quasi-Corbino sample geometry with independent contacts to different edge states in the quantum Hall effect regime to investigate the edge energy spectrum of a bilayer electron system at total filling factor $ν=2$. By analyzing non-linear $I-V$ curves in normal and tilted magnetic fields we conclude that the edge energy spectrum is in a close connection with the bulk one. At the bulk phase transition spin-singlet - canted antiferromagnetic phase $I-V$ curve becomes to be linear, indicating the disappearance or strong narrowing of the $ν=1$ incompressible strip at the edge of the sample.

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arXiv2003

Remote-doping scattering and the local field corrections in the 2D electron system in a modulation-doped Si/SiGe quantum well

The small, about 30% magnetoresistance at the onset of full spin polarization in the 2D electron system in a modulation-doped Si/SiGe quantum well gives evidence that it is the remote doping that determines the transport scattering time. Measurements of the mobility in this strongly-interacting electron system with remote-doping scattering allow us to arrive at a conclusion that the Hubbard form underestimates the local field corrections by about a factor of 2.

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arXiv2003

Observation of two relaxation mechanisms in transport between spin split edge states at high imbalance

Using a quasi-Corbino geometry to directly study electron transport between spin-split edge states, we find a pronounced hysteresis in the I-V curves, originating from slow relaxation processes. We attribute this long-time relaxation to the formation of a dynamic nuclear polarization near the sample edge. The determined characteristic relaxation times are 25 s and 200 s which points to the presence of two different relaxation mechanisms. The two time constants are ascribed to the formation of a local nuclear polarization due to flip-flop processes and the diffusion of nuclear spins.

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