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E. V. Tarkaeva

Publications and source records attributed to E. V. Tarkaeva.

3 recordsLinked to original sources

Amorphous insulating MoS$_x$ films deposited by magnetron sputtering as a low-index optical coating

While much effort are now concentrated on exploration of crystalline form of MoS$_2$ as a two-dimensional material, we show that room-temperature DC magnetron sputtering from pressurized MoS$_2$ powder target produces amorphous MoS$_x$ films with optical properties fundamentally different from those of crystalline MoS$_2$. The films were found to have a sulfur content of approximately $x=1.8$, indicating sulfur deficiency. They are optically isotropic and exhibit rather low optical losses, with a refractive index of about 2 over the visible and near-infrared spectral range. Their compatibility with lift-off lithography and dry etching makes amorphous MoS$_x$ a promising material for integrated photonic applications.

cond-mat.mtrl-sci

High-performance amorphous superconducting rhenium films by e-beam evaporation

We present electron beam evaporation of rhenium films on room-temperature substrates. The films are shown to be amorphous and achieve a record-high critical temperature for rhenium - exceeding 7 K at the midpoint of the transition - alongside a high critical current density of 5000 A/mm^2 and critical fields above 10 T. Terahertz spectroscopy reveals a BCS-like character of superconductivity with a zero-temperature energy gap of approximately 2 meV and subgap optical conductivity. Despite being friable, the films are stable and compatible with lift-off processes that opens the capabilities for superconducting device applications.

cond-mat.supr-con

Amorphous VO$_x$ films with high temperature coefficient of the resistivity grown by reactive e-beam evaporation of V metal

Amorphous VO$_x$ films without a hysteretic phase transition are stable with respect to thermal cycling and highly demanded as sensitive elements of the resistive thermometers and microbolometers. In this paper we present simple and low-temperature growth of amorphous vanadium oxide films by reactive electron beam evaporation of vanadium metal in $\sim 10^{-4}$ mBar oxygen atmosphere. The temperature coefficient of the resistivity (TCR) of the films is weakly sensitive to substrate material and temperature and could be tuned by oxygen pressure in the growth chamber up to -2.2\% /K. The resistivity value is stable for months. It depends on the substrate material and substrate temperature during the evaporation. Simplicity and controllability of the method should lead to various laboratory and industrial applications.

cond-mat.mtrl-sci