arXiv subjects

E. Vilella

Publications and source records attributed to E. Vilella.

8 recordsLinked to original sources

arXiv2026

Test-beam results from MiniCACTUS-v2: A depleted monolithic CMOS timing sensor prototype

MiniCACTUS-v2 is a monolithic sensor prototype designed in LF 150 nm CMOS process for time tagging of individual Minimum Ionizing Particles with an accuracy better than 100 ps. The sensing element is a deep n-well/p-substrate diode without internal amplification. To minimize detector capacitances, the analog front-ends and the discriminators for each pixel have been implemented outside the pixel, at the column level. After fabrication, the sensors have been thinned to 150 microns, 175 microns and 200 microns and then post-processed for backside biasing. The breakdown voltages measured on these sensors are higher than 500 V, ensuring the complete depletion of the charge collection volume. In this paper, we will focus on the time resolution measurements from a test-beam campaign conducted in July 2025 at SPS-CERN. During this period, several pixels from the 3 different sensor thicknesses have been tested at different bias voltages. The best time resolution measured is 48.88 ps on a 0.5 mm x 0.5 mm pixel from a 175 microns-thick sensor at 500 V, with nominal settings for the on-chip analog front-end and discriminator.

physics.ins-det↗

arXiv2025

Enhancing Radiation Hardness and Granularity in HV-CMOS: The RD50-MPW4 Sensor

The latest HV-CMOS pixel sensor developed by the former CERN-RD50-CMOS group, known as the \mpw, demonstrates competitive radiation tolerance, spatial granularity, and timing resolution -- key requirements for future high-energy physics experiments such as the HL-LHC and FCC. Fabricated using a \SI{150}{nm} CMOS process by \emph{LFoundry}, it introduces several improvements over its predecessor, the \emph{RD50-MPW3}, including separated power domains for reduced noise, a new backside biasing scheme, and an enhanced guard ring structure, enabling operation at bias voltages up to \SI{800}{V}. Tests with non-irradiated samples achieved hit detection efficiencies exceeding \SI{99.9}{\%} and a spatial resolution around \SI{16}{\mu m}. Neutron-irradiated sensors were characterized using IV measurements and test-beam campaigns, confirming the sensor's robustness in high-radiation environments. The results highlight the ability of HV-CMOS technology to restore hit detection efficiency post-irradiation by increasing the applied bias voltage. Details of these measurements and timing performance are presented in this paper.

physics.ins-det↗

arXiv2024

Characterization of the RD50-MPW4 HV-CMOS pixel sensor

The RD50-MPW4 is the latest HV-CMOS pixel sensor from the CERN-RD50-CMOS working group, designed to evaluate the HV-CMOS technology in terms of spatial resolution, radiation hardness and timing performance. Fabricated by LFoundry using a 150nm process, it features an improved architecture to mitigate crosstalk, which has been an issue with the predecessor RD50-MPW3, allowing more sensitive threshold settings and full matrix operation. Enhancements include separated power domains for peripheral and in-pixel digital readout, a new backside-biasing step, and an improved guard ring structure supporting biasing up to 500V, significantly boosting radiation hardness. Laboratory measurements and test beam results presented in this paper show significant improvements over its predecessor regarding noise behavior, spatial resolution, and efficiency.

physics.ins-det↗

arXiv2024

Measurements of time resolution of the RD50-MPW2 DMAPS prototype using TCT and $^{90}\mathrm{Sr}$

Results in this paper present an in-depth study of time resolution for active pixels of the RD50-MPW2 prototype CMOS particle detector. Measurement techniques employed include Backside- and Edge-TCT configurations, in addition to electrons from a $^{90}\mathrm{Sr}$ source. A sample irradiated to $5\cdot 10^{14}\,\mathrm{n}_\mathrm{eq}/\mathrm{cm}^2$ was used to study the effect of radiation damage. Timing performance was evaluated for the entire pixel matrix and with positional sensitivity within individual pixels as a function of the deposited charge. Time resolution obtained with TCT is seen to be uniform throughout the pixel's central region with approx. $220\,\mathrm{ps}$ at $12\,\mathrm{ke}^-$ of deposited charge, degrading at the edges and lower values of deposited charge. $^{90}\mathrm{Sr}$ measurements show a slightly worse time resolution as a result of delayed events coming from the peripheral areas of the pixel.

physics.ins-det↗

arXiv2022

Study of neutron irradiation effects in Depleted CMOS detector structures

In this paper results of Edge-TCT and I-V measurements with passive test structures made in LFoundry 150 nm HV-CMOS process on p-type substrates with different initial resistivities ranging from 0.5 to 3 k$Ω$cm are presented. Samples were irradiated with reactor neutrons up to a fluence of 2$\cdot$10$^{15}$ n$_{\mathrm{eq}}$/cm$^2$. Depletion depth was measured with Edge-TCT. Effective space charge concentration $N_{\mathrm{eff}}$ was estimated from the dependence of depletion depth on bias voltage and studied as a function of neutron fluence. Dependence of $N_{\mathrm{eff}}$ on fluence changes with initial acceptor concentration in agreement with other measurements with p-type silicon. Long term accelerated annealing study of $N_{\mathrm{eff}}$ and detector current up to 1280 minutes at 60$^\circ$C was made. It was found that $N_{\mathrm{eff}}$ and current in reverse biased detector behaves as expected for irradiated silicon.

physics.ins-det↗

arXiv2021

Characterisation of analogue front end and time walk in CMOS active pixel sensor

In this work we investigated a method to determine time walk in an active silicon pixel sensor prototype using Edge-TCT with infrared laser charge injection. Samples were investigated before and after neutron irradiation to 5e14 neq/cm2. Threshold, noise and calibration of the analogue front end were determined with external charge injection. A spatially sensitive measurement of collected charge and time walk was carried out with Edge-TCT, showing a uniform charge collection and output delay in pixel centre. On pixel edges charge sharing was observed due to finite beam width resulting in smaller signals and larger output delay. Time walk below 25 ns was observed for charge above 2000 electrons at a threshold above the noise level. Time walk measurement with external charge injection yielded identical results.

physics.ins-det↗

arXiv2021

Storage Ring to Search for Electric Dipole Moments of Charged Particles -- Feasibility Study

The proposed method exploits charged particles confined as a storage ring beam (proton, deuteron, possibly $^3$He) to search for an intrinsic electric dipole moment (EDM) aligned along the particle spin axis. Statistical sensitivities could approach 10$^{-29}$ e$\cdot$cm. The challenge will be to reduce systematic errors to similar levels. The ring will be adjusted to preserve the spin polarisation, initially parallel to the particle velocity, for times in excess of 15 minutes. Large radial electric fields, acting through the EDM, will rotate the polarisation from the longitudinal to the vertical direction. The slow rise in the vertical polarisation component, detected through scattering from a target, signals the EDM. The project strategy is outlined. A stepwise plan is foreseen, starting with ongoing COSY activities that demonstrate technical feasibility. Achievements to date include reduced polarization measurement errors, long horizontal plane polarization lifetimes, and control of the polarization direction through feedback from scattering measurements. The project continues with a proof-of-capability measurement (precursor experiment; first direct deuteron EDM measurement), an intermediate prototype ring (proof-of-principle; demonstrator for key technologies), and finally a high-precision electric-field storage ring.

hep-ex↗

arXiv2012

Geiger-Mode Avalanche Photodiodes in Particle Detection

It is well known that avalanche photodiodes operated in the Geiger mode above the breakdown voltage offer a virtually infinite sensitivity and time accuracy in the picosecond range that can be used for single photon detection. However, their performance in particle detection remains still unexplored. In this contribution, we are going to expose the different steps that we have taken in order to prove the efficiency of Geiger mode avalanche photodiodes in the aforementioned field. In particular, we will present an array of pixels of 1mmx1mm fabricated with a standard CMOS technology for characterization in a test beam.

physics.ins-det↗