arXiv subjects

Edward Bielejec

Publications and source records attributed to Edward Bielejec.

14 recordsLinked to original sources

arXiv2023

Detection and modeling of hole capture by single point defects under variable electric fields

Understanding carrier trapping in solids has proven key to semiconductor technologies but observations thus far have relied on ensembles of point defects, where the impact of neighboring traps or carrier screening is often important. Here, we investigate the capture of photo-generated holes by an individual negatively-charged nitrogen-vacancy (NV) center in diamond at room temperature. Using an externally gated potential to minimize space-charge effects, we find the capture probability under electric fields of variable sign and amplitude shows an asymmetric-bell-shaped response with maximum at zero voltage. To interpret these observations, we run semi-classical Monte Carlo simulations modeling carrier trapping through a cascade process of phonon emission, and obtain electric-field-dependent capture probabilities in good agreement with experiment. Since the mechanisms at play are insensitive to the trap characteristics, the capture cross sections we observe - largely exceeding those derived from ensemble measurements - should also be present in materials platforms other than diamond.

cond-mat.mes-hall↗

arXiv2022

Imaging dark charge emitters in diamond via carrier-to-photon conversion

The application of color centers in wide-bandgap semiconductors to nanoscale sensing and quantum information processing largely rests on our knowledge of the surrounding crystalline lattice, often obscured by the countless classes of point defects the material can host. Here we monitor the fluorescence from a negatively charged nitrogen-vacancy (NV-) center in diamond as we illuminate its vicinity. Cyclic charge state conversion of neighboring point defects sensitive to the excitation beam leads to a position-dependent stream of photo-generated carriers whose capture by the probe NV- leads to a fluorescence change. This "charge-to-photon" conversion scheme allows us to image other individual point defects surrounding the probe NV, including non-fluorescent "single-charge emitters" that would otherwise remain unnoticed. Given the ubiquity of color center photo-chromism, this strategy may likely find extensions to material systems other than diamond.

cond-mat.mtrl-sci↗

arXiv2021

Nanoscale Solid-State Nuclear Quadrupole Resonance Spectroscopy using Depth-Optimized Nitrogen-Vacancy Ensembles in Diamond

Nuclear magnetic resonance (NMR) and nuclear quadrupole resonance (NQR) spectroscopy of bulk quantum materials have provided insight into phenomena such as quantum phase criticality, magnetism, and superconductivity. With the emergence of nanoscale 2-D materials with magnetic phenomena, inductively-detected NMR and NQR spectroscopy are not sensitive enough to detect the smaller number of spins in nanomaterials. The nitrogen-vacancy (NV) center in diamond has shown promise in bringing the analytic power of NMR and NQR spectroscopy to the nanoscale. However, due to depth-dependent formation efficiency of the defect centers, noise from surface spins, band bending effects, and the depth dependence of the nuclear magnetic field, there is ambiguity regarding the ideal NV depth for surface NMR of statistically-polarized spins. In this work, we prepared a range of shallow NV ensemble layer depths and determined the ideal NV depth by performing NMR spectroscopy on statistically-polarized \fluorine{} in Fomblin oil on the diamond surface. We found that the measurement time needed to achieve an SNR of 3 using XY8-N noise spectroscopy has a minimum at an NV depth of 5.4 nm. To demonstrate the sensing capabilities of NV ensembles, we perform NQR spectroscopy on the \boron{} of hexagonal boron nitride flakes. We compare our best diamond to previous work with a single NV and find that this ensemble provides a shorter measurement time with excitation diameters as small as 4 $μ$m. This analysis provides ideal conditions for further experiments involving NMR/NQR spectroscopy of 2-D materials with magnetic properties.

cond-mat.mes-hall↗

arXiv2021

Optical activation and detection of charge transport between individual color centers in room-temperature diamond

Charge control of color centers in semiconductors promises opportunities for novel forms of sensing and quantum information processing. Here, we articulate confocal fluorescence microscopy and magnetic resonance protocols to induce and probe charge transport between discrete sets of engineered nitrogen-vacancy (NV) centers in diamond, down to the level of individual defects. In our experiments, a "source" NV undergoes optically-driven cycles of ionization and recombination to produce a stream of photo-generated carriers, one of which we subsequently capture via a "target" NV several micrometers away. We use a spin-to-charge conversion scheme to encode the spin state of the source color center into the charge state of the target, in the process allowing us to set an upper bound to carrier injection from other background defects. We attribute our observations to the action of unscreened Coulomb potentials producing giant carrier capture cross-sections, orders of magnitude greater than those typically attained in ensemble measurements. Besides their fundamental interest, these results open intriguing prospects in the use of free carriers as a quantum bus to mediate effective interactions between paramagnetic defects in a solid-state chip.

cond-mat.mes-hall↗

arXiv2021

A fitting algorithm for optimizing ion implantation energies and fluences

We describe a method to automatically generate an ion implantation recipe, a set of energies and fluences, to produce a desired defect density profile in a solid using the fewest required energies. We simulate defect density profiles for a range of ion energies, fit them with an appropriate function, and interpolate to yield defect density profiles at arbitrary ion energies. Given $N$ energies, we then optimize a set of $N$ energy-fluence pairs to match a given target defect density profile. Finally, we find the minimum $N$ such that the error between the target defect density profile and the defect density profile generated by the $N$ energy-fluence pairs is less than a given threshold. Inspired by quantum sensing applications with nitrogen-vacancy centers in diamond, we apply our technique to calculate optimal ion implantation recipes to create uniform-density 1 $μ$m surface layers of $^{15}$N or vacancies (using $^4$He).

cond-mat.mtrl-sci↗

arXiv2021

Hidden Silicon-Vacancy Centers in Diamond

We characterize a high-density sample of negatively charged silicon-vacancy (SiV$^-$) centers in diamond using collinear optical multidimensional coherent spectroscopy. By comparing the results of complementary signal detection schemes, we identify a hidden population of \ce{SiV^-} centers that is not typically observed in photoluminescence, and which exhibits significant spectral inhomogeneity and extended electronic $T_2$ times. The phenomenon is likely caused by strain, indicating a potential mechanism for controlling electric coherence in color-center-based quantum devices.

quant-ph↗

arXiv2021

Coherent Interactions Between Silicon-Vacancy Centers in Diamond

We report coherent interactions within an ensemble of silicon-vacancy color centers in diamond. The interactions are ascribed to resonant dipole-dipole coupling. Further, we demonstrate control over resonant center pairs by using a driving optical pulse to induce collective, interaction-enabled Rabi-oscillations in the ensemble. Non-resonant center pairs do not undergo collective oscillations.

quant-ph↗

arXiv2021

Using silicon-vacancy centers in diamond to probe the full strain tensor

An ensemble of silicon vacancy centers in diamond (\ce{SiV-}) is probed using two coherent spectroscopy techniques. Two main distinct families of \ce{SiV-} centers are identified using multidimensional coherent spectroscopy, and these families are paired with two orientation groups by comparing spectra from different linear polarizations of the incident laser. By tracking the peak centers in the measured spectra, the full diamond strain tensor is calculated local to the laser spot. Such measurements are made at multiple points on the sample surface and variations in the strain tensor are observed.

cond-mat.mtrl-sci↗

arXiv2018

Spectral alignment of single-photon emitters in diamond using strain gradient

Solid-state single-photon emitters are attractive for realization of integrated quantum systems due to their experimental convenience and scalability. Unfortunately, however, their complex mesoscopic environments cause photons from different emitters to be spectrally distinguishable. Here we demonstrate spectral alignment of two solid-state single-photon emitters by utilizing the strain gradient. Multiple germanium vacancy (GeV) color centers in diamond are created in fabricated diamond microcantilevers using focused ion beam implantation. The strain response of the electronic energy levels of the GeV is measured by inducing an electrically controlled strain in the device. Leveraging the large strain gradient, we tune two GeVs in the spot to emit at the same optical wavelength. Simultaneous resonant excitation of two spectrally aligned GeVs is demonstrated using a narrow linewidth laser. This strain gradient tuning can be used to realize spectrally identical quantum emitters for on-chip integrated quantum systems.

cond-mat.mes-hall↗

arXiv2018

Photon-mediated interactions between quantum emitters in a diamond nanocavity

Photon-mediated interactions between quantum systems are essential for realizing quantum networks and scalable quantum information processing. We demonstrate such interactions between pairs of silicon-vacancy (SiV) color centers strongly coupled to a diamond nanophotonic cavity. When the optical transitions of the two color centers are tuned into resonance, the coupling to the common cavity mode results in a coherent interaction between them, leading to spectrally-resolved superradiant and subradiant states. We use the electronic spin degrees of freedom of the SiV centers to control these optically-mediated interactions. Our experiments pave the way for implementation of cavity-mediated quantum gates between spin qubits and for realization of scalable quantum network nodes.

quant-ph↗

arXiv2018

Controlling the coherence of a diamond spin qubit through strain engineering

The uncontrolled interaction of a quantum system with its environment is detrimental for quantum coherence. In the context of solid-state qubits, techniques to mitigate the impact of fluctuating electric and magnetic fields from the environment are well-developed. In contrast, suppression of decoherence from thermal lattice vibrations is typically achieved only by lowering the temperature of operation. Here, we use a nano-electro-mechanical system (NEMS) to mitigate the effect of thermal phonons on a solid-state quantum emitter without changing the system temperature. We study the silicon-vacancy (SiV) colour centre in diamond which has optical and spin transitions that are highly sensitive to phonons. First, we show that its electronic orbitals are highly susceptible to local strain, leading to its high sensitivity to phonons. By controlling the strain environment, we manipulate the electronic levels of the emitter to probe, control, and eventually, suppress its interaction with the thermal phonon bath. Strain control allows for both an impressive range of optical tunability and significantly improved spin coherence. Finally, our findings indicate that it may be possible to achieve strong coupling between the SiV spin and single phonons, which can lead to the realisation of phonon-mediated quantum gates and nonlinear quantum phononics.

quant-ph↗

arXiv2018

Strain engineering of the silicon-vacancy center in diamond

We control the electronic structure of the silicon-vacancy (SiV) color-center in diamond by changing its static strain environment with a nano-electro-mechanical system. This allows deterministic and local tuning of SiV optical and spin transition frequencies over a wide range, an essential step towards multi-qubit networks. In the process, we infer the strain Hamiltonian of the SiV revealing large strain susceptibilities of order 1 PHz/strain for the electronic orbital states. We identify regimes where the spin-orbit interaction results in a large strain suseptibility of order 100 THz/strain for spin transitions, and propose an experiment where the SiV spin is strongly coupled to a nanomechanical resonator.

quant-ph↗

arXiv2017

A fiber-coupled diamond quantum nanophotonic interface

Color centers in diamond provide a promising platform for quantum optics in the solid state, with coherent optical transitions and long-lived electron and nuclear spins. Building upon recent demonstrations of nanophotonic waveguides and optical cavities in single-crystal diamond, we now demonstrate on-chip diamond nanophotonics with a high efficiency fiber-optical interface, achieving > 90% power coupling at visible wavelengths. We use this approach to demonstrate a bright source of narrowband single photons, based on a silicon-vacancy color center embedded within a waveguide-coupled diamond photonic crystal cavity. Our fiber-coupled diamond quantum nanophotonic interface results in a high flux of coherent single photons into a single mode fiber, enabling new possibilities for realizing quantum networks that interface multiple emitters, both on-chip and separated by long distances.

cond-mat.mes-hall↗

arXiv2016

Single-Photon Switching and Entanglement of Solid-State Qubits in an Integrated Nanophotonic System

Efficient interfaces between photons and quantum emitters form the basis for quantum networks and enable nonlinear optical devices operating at the single-photon level. We demonstrate an integrated platform for scalable quantum nanophotonics based on silicon-vacancy (SiV) color centers coupled to nanoscale diamond devices. By placing SiV centers inside diamond photonic crystal cavities, we realize a quantum-optical switch controlled by a single color center. We control the switch using SiV metastable orbital states and verify optical switching at the single-photon level by using photon correlation measurements. We use Raman transitions to realize a single-photon source with a tunable frequency and bandwidth in a diamond waveguide. Finally, we create entanglement between two SiV centers by detecting indistinguishable Raman photons emitted into a single waveguide. Entanglement is verified using a novel superradiant feature observed in photon correlation measurements, paving the way for the realization of quantum networks.

quant-ph↗