arXiv · 2006.02323
Hidden Silicon-Vacancy Centers in Diamond
Abstract
We characterize a high-density sample of negatively charged silicon-vacancy (SiV$^-$) centers in diamond using collinear optical multidimensional coherent spectroscopy. By comparing the results of complementary signal detection schemes, we identify a hidden population of \ce{SiV^-} centers that is not typically observed in photoluminescence, and which exhibits significant spectral inhomogeneity and extended electronic $T_2$ times. The phenomenon is likely caused by strain, indicating a potential mechanism for controlling electric coherence in color-center-based quantum devices.
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Christopher L. Smallwood, Ronald Ulbricht, Matthew W. Day, Tim Schröder, Kelsey M. Bates, Travis M. Autry, Geoffrey Diederich, Edward Bielejec, Mark E. Siemens, Steven T. Cundiff. 2021-05-05. Hidden Silicon-Vacancy Centers in Diamond. https://doi.org/10.1103/physrevlett.126.213601
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