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Edward McCann

Publications and source records attributed to Edward McCann.

At least 37 records · Page 2Linked to original sources

Multilayer graphenes with mixed stacking structure: interplay of Bernal and rhombohedral stacking

We study the electronic structure of multilayer graphenes with a mixture of Bernal and rhombohedral stacking and propose a general scheme to understand the electronic band structure of an arbitrary configuration. The system can be viewed as a series of finite Bernal graphite sections connected by stacking faults. We find that the low-energy eigenstates are mostly localized in each Bernal section, and, thus, the whole spectrum is well approximated by a collection of the spectra of independent sections. The energy spectrum is categorized into linear, quadratic and cubic bands corresponding to specific eigenstates of Bernal sections. The ensemble-averaged spectrum exhibits a number of characteristic discrete structures originating from finite Bernal sections or their combinations likely to appear in a random configuration. In the low-energy region, in particular, the spectrum is dominated by frequently-appearing linear bands and quadratic bands with special band velocities or curvatures. In the higher energy region, band edges frequently appear at some particular energies, giving optical absorption edges at corresponding characteristic photon frequencies.

cond-mat.mes-hall↗

Electronic properties of monolayer and bilayer graphene

The tight-binding model of electrons in graphene is reviewed. We derive low-energy Hamiltonians supporting massless Dirac-like chiral fermions and massive chiral fermions in monolayer and bilayer graphene, respectively, and we describe how their chirality is manifest in the sequencing of plateaus observed in the integer quantum Hall effect. The opening of a tuneable band gap in bilayer graphene in response to a transverse electric field is described, and we explain how Hartree theory may be used to develop a simple analytical model of screening.

cond-mat.mes-hall↗

z/-z Symmetry of spin-orbit coupling and weak localization in graphene

We show that the influence of spin-orbit (SO) coupling on the weak localization effect for electrons in graphene depends on the lack or presence of z/-z symmetry in the system. While for z/-z asymmetric SO coupling, disordered graphene should display a weak anti-localization behavior at lowest temperature, z/-z symmetric coupling leads to an effective saturation of decoherence time which can be partially lifted by an in-plane magnetic field, thus, tending to restore the weak localization effect.

cond-mat.mes-hall↗

Landau level spectra and the quantum Hall effect of multilayer graphene

The Landau level spectra and the quantum Hall effect of ABA-stacked multilayer graphenes are studied in the effective mass approximation. The low-energy effective mass Hamiltonian may be partially diagonalized into an approximate block-diagonal form, with each diagonal block contributing parabolic bands except, in a multilayer with an odd number of layers, for an additional block describing Dirac-like bands with a linear dispersion. We fully include the band parameters and, taking into account the symmetry of the lattice, we analyze their affect on the block-diagonal Hamiltonian. Next-nearest layer couplings are shown to be particularly important in determining the low-energy spectrum and the phase diagram of the quantum Hall conductivity, by causing energy shifts, level anti-crossings, and valley splitting of the low-lying Landau levels.

cond-mat.mes-hall↗

Spin-orbit coupling and broken spin degeneracy in multilayer graphene

Since the lattices of ABA-stacked graphene multilayers with an even number of layers, as well as that of monolayer graphene, satisfy spatial-inversion symmetry, their electronic bands must be spin degenerate in the presence of time-inversion symmetry. In intrinsic monolayer and bilayer graphene, when symmetry is not broken by external fields, the only spin-orbit coupling present at low energy near the corner of the Brillouin zone is the Kane-Mele term, that opens a bulk energy gap but does not break the spin degeneracy of the energy bands [C. L. Kane and E. J. Mele, Phys. Rev. Lett. 95, 226801 (2005)]. However, spin splitting is allowed in multilayers with an odd number of layers (greater than or equal to 3) because their lattices do not satisfy spatial inversion symmetry. We show that, in trilayer graphene, in addition to the Kane-Mele term, there is a second type of intrinsic spin-orbit coupling present at low energy near the corner of the Brillouin zone. It introduces a Zeeman-like spin splitting of the energy bands at each valley, with an opposite sign of the effective magnetic field in the two valleys. We estimate the magnitude of the effective field to be ~2T.

cond-mat.mes-hall↗

Parity and valley degeneracy in multilayer graphene

We study spatial symmetry in general ABA-stacked multilayer graphene to illustrate how electronic spectra at the two valleys are related in a magnetic field. We show that the lattice of multilayers with an even number of layers, as well as that of monolayer graphene, satisfy spatial inversion symmetry, which rigorously guarantees valley degeneracy in the absence of time-reversal symmetry. A multilayer with an odd number of layers (three or more) lacks inversion symmetry, but there is another transformation imposing an approximate valley degeneracy, which arises because the low-energy Hamiltonian consists of separate monolayerlike and bilayerlike parts. We show that an external electrostatic potential generally breaks valley degeneracy in a magnetic field, in a markedly different manner in odd and even multilayers.

cond-mat.mes-hall↗

Trigonal warping and Berry's phase N pi in ABC-stacked multilayer graphene

The electronic band structure of ABC-stacked multilayer graphene is studied within an effective mass approximation. The electron and hole bands touching at zero energy support chiral quasiparticles characterized by Berry's phase N pi for N-layers, generalizing the low-energy band structure of monolayer and bilayer graphene. We investigate the trigonal-warping deformation of the energy bands and show that the Lifshitz transition, in which the Fermi circle breaks up into separate parts at low energy, reflects Berry's phase N pi. It is particularly prominent in trilayers, N=3, with the Fermi circle breaking into three parts at a relatively large energy that is related to next-nearest-layer coupling. For N=3, we study the effects of electrostatic potentials which vary in the stacking direction, and find that a perpendicular electric field, as well as opening an energy gap, strongly enhances the trigonal-warping effect. In magnetic fields, the N=3 Lifshitz transition is manifested as a coalescence of Landau levels into triply-degenerate levels.

cond-mat.mes-hall↗

Pseudospin valve in bilayer graphene: towards graphene-based pseudospintronics

We propose a non-magnetic, pseudospin-based version of a spin valve, in which the pseudospin polarization in neighboring regions of a graphene bilayer is controlled by external gates. Numerical calculations demonstrate a large on-off ratio of such a device. This finding holds promise for the realization of pseudospintronics: a form of electronics based upon the manipulation of pseudospin analogous to the control of physical spin in spintronics applications.

cond-mat.mes-hall↗

Gate-induced interlayer asymmetry in ABA-stacked trilayer graphene

We calculate the electronic band structure of ABA-stacked trilayer graphene in the presence of external gates, using a self-consistent Hartree approximation to take account of screening. In the absence of a gate potential, there are separate pairs of linear and parabolic bands at low energy. A gate field perpendicular to the layers breaks mirror reflection symmetry with respect to the central layer and hybridizes the linear and parabolic low-energy bands, leaving a chiral Hamiltonian essentially different from that of monolayer or bilayer graphene. Using the self-consistent Born approximation, we find that the density of states and the minimal conductivity in the presence of disorder generally increase as the gate field increases, in sharp contrast with bilayer graphene.

cond-mat.mes-hall↗

Asymmetry gap in the electronic band structure of bilayer graphene

A tight binding model is used to calculate the band structure of bilayer graphene in the presence of a potential difference between the layers that opens a gap $Δ$ between the conduction and valence bands. In particular, a self consistent Hartree approximation is used to describe imperfect screening of an external gate, employed primarily to control the density $n$ of electrons on the bilayer, resulting in a potential difference between the layers and a density dependent gap $Δ(n)$. We discuss the influence of a finite asymmetry gap $Δ(0)$ at zero excess density, caused by the screening of an additional transverse electric field, on observations of the quantum Hall effect.

cond-mat.mes-hall↗

Landau level degeneracy and quantum Hall effect in a graphite bilayer

We derive an effective two-dimensional Hamiltonian to describe the low energy electronic excitations of a graphite bilayer, which correspond to chiral quasiparticles with a parabolic dispersion exhibiting Berry phase $2π$. Its high-magnetic-field Landau level spectrum consists of almost equidistant groups of four-fold degenerate states at finite energy and eight zero-energy states. This can be translated into the Hall conductivity dependence on carrier density, $σ_{xy}(N)$, which exhibits plateaus at integer values of $4e^{2}/h$ and has a ``double'' $8e^{2}/h$ step between the hole and electron gases across zero density, in contrast to $(4n+2)e^{2}/h$ sequencing in a monolayer.

cond-mat.mes-hall↗

Degeneracy breaking and intervalley scattering due to short-ranged impurities in finite single-wall carbon nanotubes

We present a theoretical study of degeneracy breaking due to short-ranged impurities in finite, single-wall, metallic carbon nanotubes. The effective mass model is used to describe the slowly varying spatial envelope wavefunctions of spinless electrons near the Fermi level at two inequivalent valleys (K-points) in terms of the four component Dirac equation for massless fermions, with the role of spin assumed by pseudospin due to the relative amplitude of the wave function on the sublattice atoms (``A'' and ``B''). Using boundary conditions at the ends of the tube that neither break valley degeneracy nor mix pseudospin eigenvectors, we use degenerate perturbation theory to show that the presence of impurities has two effects. Firstly, the position of the impurity with respect to the spatial variation of the envelope standing waves results in a sinusoidal oscillation of energy level shift as a function of energy. Secondly, the position of the impurity within the hexagonal graphite unit cell produces a particular 4 by 4 matrix structure of the corresponding effective Hamiltonian. The symmetry of this Hamiltonian with respect to pseudospin flip is related to degeneracy breaking and, for an armchair tube, the symmetry with respect to mirror reflection in the nanotube axis is related to pseudospin mixing.

cond-mat.mes-hall↗

Symmetry of boundary conditions of the Dirac equation for electrons in carbon nanotubes

We consider the effective mass model of spinless electrons in single wall carbon nanotubes that is equivalent to the Dirac equation for massless fermions. Within this framework we derive all possible energy independent hard wall boundary conditions that are applicable to metallic tubes. The boundary conditions are classified in terms of their symmetry properties and we demonstrate that the use of different boundary conditions will result in varying degrees of valley degeneracy breaking of the single particle energy spectrum.

cond-mat.mes-hall↗

Magnon-assisted transport and thermopower in ferromagnet-normal metal tunnel junctions

We develop a theoretical model of magnon-assisted transport in a mesoscopic tunnel junction between a ferromagnetic metal and a normal (non-magnetic) metal. The current response to a bias voltage is dominated by the contribution of elastic processes rather than magnon-assisted processes and the degree of spin polarization of the current, parameterized by a function $P (Π_{\uparrow (\downarrow)},Π_{N})$, $0 \leq P \leq 1$, depends on the relative sizes of the majority $Π_{\uparrow}$ and minority $Π_{\downarrow}$ band Fermi surface in the ferromagnet and of the Fermi surface of the normal metal $Π_{N}$. On the other hand, magnon-assisted tunneling gives the dominant contribution to the current response to a temperature difference across the junction. The resulting thermopower is large, $S \sim - (k_B/e) (k_BT/ω_{D})^{3/2} P (Π_{\uparrow (\downarrow)},Π_{N})$, where the temperature dependent factor $(k_{B}T/ω_{D})^{3/2}$ reflects the fractional change in the net magnetization of the ferromagnet due to thermal magnons at temperature $T$ (Bloch's $T^{3/2}$ law) and $ω_{D}$ is the magnon Debye energy.

cond-mat.mes-hall↗

Giant magnetothermopower of magnon-assisted transport in ferromagnetic tunnel junctions

We present a theoretical description of the thermopower due to magnon-assisted tunneling in a mesoscopic tunnel junction between two ferromagnetic metals. The thermopower is generated in the course of thermal equilibration between two baths of magnons, mediated by electrons. For a junction between two ferromagnets with antiparallel polarizations, the ability of magnon-assisted tunneling to create thermopower $S_{AP}$ depends on the difference between the size $Π_{\uparrow, \downarrow}$ of the majority and minority band Fermi surfaces and it is proportional to a temperature dependent factor $(k_{B}T/ω_{D})^{3/2}$ where $ω_{D}$ is the magnon Debye energy. The latter factor reflects the fractional change in the net magnetization of the reservoirs due to thermal magnons at temperature $T$ (Bloch's $T^{3/2}$ law). In contrast, the contribution of magnon-assisted tunneling to the thermopower $S_P$ of a junction with parallel polarizations is negligible. As the relative polarizations of ferromagnetic layers can be manipulated by an external magnetic field, a large difference $ΔS = S_{AP} - S_P \approx S_{AP} \sim - (k_B/e) f (Π_{\uparrow},Π_{\downarrow}) (k_BT/ω_{D})^{3/2}$ results in a magnetothermopower effect. This magnetothermopower effect becomes giant in the extreme case of a junction between two half-metallic ferromagnets, $ΔS \sim - k_B/e$.

cond-mat.mes-hall↗

Magnetothermopower and magnon-assisted transport in ferromagnetic tunnel junctions

We present a model of the thermopower in a mesoscopic tunnel junction between two ferromagnetic metals based upon magnon-assisted tunneling processes. In our model, the thermopower is generated in the course of thermal equilibration between two baths of magnons, mediated by electrons. We predict a particularly large thermopower effect in the case of a junction between two half-metallic ferromagnets with antiparallel polarizations, $S_{AP} \sim - (k_B/e)$, in contrast to $S_{P} \approx 0$ for a parallel configuration.

cond-mat.mes-hall↗

Subgap transport in ferromagnet-superconductor junctions due to magnon-assisted Andreev reflection

We propose a new process of magnon-assisted Andreev reflection at a ferromagnetic metal - superconductor interface, which consists of the simultaneous injection of a Cooper pair from the superconductor and the emission of a magnon inside the ferromagnet. At low temperature this process represents an additional channel for sub-gap transport across an FS interface, which lifts restrictions on the current resulting from the necessity to match spin-polarized current in the ferromagnet with spin-less current in the superconductor. For a junction between a superconductor and a ferromagnet with an arbitrary degree of polarization, the inelastic magnon-assisted Andreev reflection process would manifest itself as a nonlinear addition to the $I(V)$ characteristics which is asymmetric with respect to the sign of the bias voltage and is related to the density of states of magnons in the ferromagnet. Expressions for the subgap $I(V)$ characteristics are given for arbitrary interfacial quality whilst the limiting cases of uniformly transparent and disordered interfaces are discussed in detail.

cond-mat.supr-con↗

Magnon-assisted Andreev reflection in a ferromagnet-superconductor junction

We study subgap transport in a ferromagnet-superconductor junction at low temperature due to Andreev reflection. The mismatch of spin polarized current in the ferromagnet and spinless current in the superconductor results in an additional contact resistance which can be reduced by magnon emission in the ferromagnet. Using the s-f model and focusing on half-metallic ferromagnets, we calculate the corresponding nonlinear contribution to the current which is asymmetric with respect to the sign of the bias voltage and is related to the density of states of magnons in the ferromagnet.

cond-mat.mes-hall↗