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Eike F. Schwier

Publications and source records attributed to Eike F. Schwier.

At least 19 recordsLinked to original sources

Prediction and observation of the first antiferromagnetic topological insulator

Magnetic topological insulators (MTIs) are narrow gap semiconductor materials that combine non-trivial band topology and magnetic order. Unlike their nonmagnetic counterparts, MTIs may have some of the surfaces gapped due to breaking the time-reversal symmetry, which enables a number of exotic phenomena having potential applications in spintronics. So far, MTIs have only been created by means of doping nonmagnetic TIs with 3d transition metal elements, however, such an approach leads to strongly inhomogeneous magnetic and electronic properties of these materials, restricting the observation of important effects to very low temperatures. Finding intrinsic MTI, i.e. a stoichiometric well-ordered magnetic compound, could be an ideal solution to these problems, but no such material was observed to date. Here, using density functional theory we predict and further confirm by means of structural, transport, magnetic, angle- and spin-resolved photoemission spectroscopy measurements the realization of the antiferromagnetic (AFM) TI phase, that is hosted by the van der Waals layered compound MnBi$_2$Te$_4$. An interlayer AFM ordering makes MnBi$_2$Te$_4$ invariant with respect to the combination of the time-reversal ($Θ$) and primitive-lattice translation ($T_{1/2}$) symmetries, $S = ΘT_{1/2}$, giving rise to the $Z_2$ topological classification of AFM insulators. We find $Z_2 = 1$ for MnBi$_2$Te$_4$, which confirms its topologically nontrivial nature. The $S$-breaking (0001) surface of MnBi$_2$Te$_4$ exhibits a giant bandgap in the topological surface state as evidenced by ab initio calculations and photoemission measurements. These results culminate almost a decade-long search of an AFMTI, predicted in 2010. Furthermore, MnBi$_2$Te$_4$ is the first intrinsic magnetic TI realized experimentally.

cond-mat.mtrl-sci↗

Magneto-Transport and High-Resolution Angle-Resolved Photoelectron Spectroscopy Studies of Palladium Doped Bi$_{2}$Te$_{3}$

We have performed magneto-transport and high-resolution angle-resolved photoelectron spectroscopy (ARPES) measurements on palladium (Pd) doped topological insulator Pd$_{x}$Bi$_{2}$Te$_{3}$ (0 $\leq$ x $\leq$ 0.20) single crystals. We have observed unusually high values of magnetoresistance ($\sim$ 1500%) and mobility ($\sim$ 93000 cm$^{2}$V$^{-1}$s$^{-1}$) at low temperatures for pristine Bi2Te3 that decrease on Pd doping. The Shubnikov-de Haas (SdH) oscillations have been detected for x = 0.05, 0.10, confirming the presence of 2D topological surface states (TSSs) for these samples. The Hall measurement shows the crossover from n-type charge carriers in pristine Bi$_{2}$Te$_{3}$ to p-type charge carriers upon Pd doping. The ARPES measurements show that the conduction band crosses the Fermi level for pristine Bi$_{2}$Te$_{3}$, and the Dirac point of the TSSs and bulk-derived valence bands indicated shift to lower binding energy upon Pd doping in a rigid-band-like way up to x $\sim$0.10. Based on the comparison of the parameters obtained from the SdH and ARPES measurements, the reduction in the kF value in the magneto-transport measurements likely due to the band bending induced by the Schottky barrier.

cond-mat.str-el↗

Behavior of gapped and ungapped Dirac cones in an antiferromagnetic topological metal, SmBi

We studied the behavior of nontrivial Dirac fermion states in an antiferromagnetic metal SmBi using angle-resolved photoemission spectroscopy (ARPES). The experimental results exhibit multiple Fermi pockets around $\overlineΓ$ and $\overline{M}$ points along with a band inversion in the spectrum along the $\overlineΓ$-$\overline{M}$ line consistent with the density functional theory results. In addition, ARPES data reveal Dirac cones at $\overlineΓ$ and $\overline{M}$ points within the energy gap of the bulk bands. The Dirac cone at $\overline{M}$ exhibit a distinct Dirac point and is intense in the high photon energy data while the Dirac cone at $\overlineΓ$ is intense at low photon energies. Employing ultra-high-resolution ARPES, we discover destruction of a Fermi surface constituted by the surface states across the Neél temperature of 9 K. Interestingly, the Dirac cone at $\overlineΓ$ is found to be gapped at 15 K and the behavior remains similar across the magnetic transition. These results reveal complex momentum dependent gap formation and fermi surface destruction across magnetic transition in an exotic correlated topological material; the interplay between magnetism and topology in this system calls for ideas beyond existing theoretical models.

cond-mat.str-el↗

Charge-Density-Wave-Induced Peak-Dip-Hump Structure and the Multiband Superconductivity in a Kagome Superconductor CsV$_{3}$Sb$_{5}$

The entanglement of charge density wave (CDW), superconductivity, and topologically nontrivial electronic structure has recently been discovered in the kagome metal $A$V$_3$Sb$_5$ ($A$ = K, Rb, Cs) family. With high-resolution angle-resolved photoemission spectroscopy, we study the electronic properties of CDW and superconductivity in CsV$_3$Sb$_5$. The spectra around $\bar{K}$ is found to exhibit a peak-dip-hump structure associated with two separate branches of dispersion, demonstrating the isotropic CDW gap opening below $E_{\rm F}$. The peak-dip-hump lineshape is contributed by linearly dispersive Dirac bands in the lower branch and a dispersionless flat band close to $E_{\rm F}$ in the upper branch. The electronic instability via Fermi surface nesting could play a role in determining these CDW-related features. The superconducting gap of $\sim$0.4 meV is observed on both the electron band around $\barΓ$ and the flat band around $\bar{K}$, implying the multiband superconductivity. The finite density of states (DOS) at $E_{\rm F}$ in the CDW phase are most likely in favor of the emergence of multiband superconductivity, particularly the enhanced DOS associated with the flat band. Our results not only shed light on the controversial origin of the CDW, but also offer insights into the relationship between CDW and superconductivity.

cond-mat.supr-con↗

Surface band characters of Weyl semimetal candidate material MoTe$_2$ revealed by one-step ARPES theory

The layered 2D-material MoTe$_2$ in the T$_d$ crystal phase is a semimetal which has theoretically been predicted to possess topologically non-trivial bands corresponding to Weyl fermions. Clear experimental evidence by angle-resolved photoemission spectroscopy (ARPES) is, however, lacking, which calls for a careful examination of the relation between ground state band structure calculations and ARPES intensity plots. Here we report a study of the near Fermi-energy band structure of MoTe$_2$(T$_d$) by means of ARPES measurements, density functional theory, and one-step-model ARPES calculations. Good agreement between theory and experiment is obtained. We analyze the orbital character of the surface bands and its relation to the ARPES polarization dependence. We find that light polarization has a major efect on which bands can be observed by ARPES. For s-polarized light, the ARPES intensity is dominated by subsurface Mo d orbitals, while p-polarized light reveals the bands composed mainly derived from Te p orbitals. Suitable light polarization for observing either electron or hole pocket are determined

cond-mat.mtrl-sci↗

Spectroscopic Evidence on Realization of a Genuine Topological Nodal Line Semimetal in LaSbTe

The nodal line semimetals have attracted much attention due to their unique topological electronic structure and exotic physical properties. A genuine nodal line semimetal is qualified by the presence of Dirac nodes along a line in the momentum space that are protected against the spin-orbit coupling. In addition, it requires that the Dirac points lie close to the Fermi level allowing to dictate the macroscopic physical properties. Although the material realization of nodal line semimetals have been theoretically predicted in numerous compounds, only a few of them have been experimentally verified and the realization of a genuine nodal line semimetal is particularly rare. Here we report the realization of a genuine nodal line semimetal in LaSbTe. We investigated the electronic structure of LaSbTe by band structure calculations and angle-resolved photoemission (ARPES) measurements. Taking spin-orbit coupling into account, our band structure calculations predict that a nodal line is formed in the boundary surface of the Brillouin zone which is robust and lies close to the Fermi level. The Dirac nodes along the X-R line in momentum space are directly observed in our ARPES measurements and the energies of these Dirac nodes are all close to the Fermi level. These results constitute clear evidence that LaSbTe is a genuine nodal line semimetal,providing a new platform to explore for novel phenomena and possible applications associated with the nodal line semimetals.

cond-mat.mtrl-sci↗

Superconductivity and Fermi Surface Nesting in the Candidate Dirac Semimetal NbC

We report the synthesis of single-crystal NbC, a transition metal carbide with various unusual properties. Transport, magnetic susceptibility, and specific heat measurements demonstrate that NbC is a conventional superconductor with a superconducting transition temperature ($T_c$) of 11.5 K. Our theoretical calculations show that NbC is a type-II Dirac semimetal with strong Fermi surface nesting, which is supported by our ARPES measurement results. We also observed the superconducting gaps of NbC using angle-resolved photoemission spectroscopy (ARPES) and found some unconventional behaviors. These intriguing superconducting and topological properties, combined with the high corrosion resistance, make NbC an ideal platform for both fundamental research and device applications.

cond-mat.supr-con↗

Half-Magnetic Topological Insulator

Topological magnets are a new family of quantum materials providing great potential to realize emergent phenomena, such as quantum anomalous Hall effect and axion-insulator state. Here we present our discovery that stoichiometric ferromagnet MnBi8Te13 with natural heterostructure MnBi2Te4-(Bi2Te3)3 is an unprecedented half-magnetic topological insulator, with the magnetization existing at the MnBi2Te4 surface but not at the opposite surface terminated by triple Bi2Te3 layers. Our angle-resolved photoemission spectroscopy measurements unveil a massive Dirac gap at the MnBi2Te4 surface, and gapless Dirac cone on the other side. Remarkably, the Dirac gap (~28 meV) at MnBi2Te4 surface decreases monotonically with increasing temperature and closes right at the Curie temperature, thereby representing the first smoking-gun spectroscopic evidence of magnetization-induced topological surface gap among all known magnetic topological materials. We further demonstrate theoretically that the half-magnetic topological insulator is desirable to realize the half-quantized surface anomalous Hall effect, which serves as a direct proof of the general concept of axion electrodynamics in condensed matter systems.

cond-mat.mtrl-sci↗

Emergent of the flat band and superstructures in the VSe2 / Bi2Se3 system

Dispersionless flat bands are proposed to be a fundamental ingredient to achieve the various sought after quantum states of matter including high-temperature superconductivity1-4 and fractional quantum Hall effect5-6. Materials with such peculiar electronic states, however, are very rare and often exhibit very complex band structures. Here, we report on the emergence of a flat band with a possible insulating ground state in the sub-monolayer VSe2 / Bi2Se3 heterostructure by means of angle-resolved photoemission spectroscopy and scanning tunneling microscopy. The flat band is dispersionless along the kll and kz momenta, filling the entire Brillouin zone, and it exhibits a complex circular dichroism signal reversing the sign at several points of the Brillouin zone. These properties together with the presence of a Moiré patterns in VSe2 suggest that the flat band is not a trivial disorder or confinement effect and could even be topologically non-trivial. Another intriguing finding is that the flat band does not modify the Dirac cone of Bi2Se3 around the Dirac point. Furthermore, we found that the flat band and the Dirac surface states of Bi2Se3 have opposite energy shifts with electron doping. This opens a novel way of controlling the spin texture of photocurrents as well as the transport properties of the heterostructure. These features make this flat band remarkably distinguishable from previous findings and our methodology can be applied to other systems opening a promising pathway to realize strongly correlated quantum effects in topological materials.

cond-mat.mtrl-sci↗

Experimental evidence of monolayer AlB$_2$ with symmetry-protected Dirac cones

Monolayer AlB$_2$ is composed of two atomic layers: honeycomb borophene and triangular aluminum. In contrast with the bulk phase, monolayer AlB$_2$ is predicted to be a superconductor with a high critical temperature. Here, we demonstrate that monolayer AlB$_2$ can be synthesized on Al(111) via molecular beam epitaxy. Our theoretical calculations revealed that the monolayer AlB$_2$ hosts several Dirac cones along the $Γ$--M and $Γ$--K directions; these Dirac cones are protected by crystal symmetries and are thus resistant to external perturbations. The extraordinary electronic structure of the monolayer AlB$_2$ was confirmed via angle-resolved photoemission spectroscopy measurements. These results are likely to stimulate further research interest to explore the exotic properties arising from the interplay of Dirac fermions and superconductivity in two-dimensional materials.

cond-mat.mtrl-sci↗

Spectroscopic realization of large surface gap in a doped magnetic topological insulator

Realization of the quantum anomalous Hall effect and axion electrodynamics in topological materials are among the paradigmatic phenomena in condensed matter physics. Recently, signatures of both phases are observed to exist in thin films of MnBi$_2$Te$_4$, a stoichiometric antiferromagnetic topological insulator. Direct evidence of the bulk topological magnetoelectric response in an axion insulator requires an energy gap at its topological surface state (TSS). However, independent spectroscopic experiments revealed that such a surface gap is absent, or much smaller than previously thought, in MnBi$_2$Te$_4$. Here, we utilize angle resolved photoemission spectroscopy and density functional theory calculations to demonstrate that a sizable TSS gap unexpectedly exists in Sb-doped MnBi$_2$Te$_4$. This gap is found to be topologically nontrivial, insensitive to the bulk antiferromagnetic-paramagnetic transition, while enlarges along with increasing Sb concentration. Our work shows that Mn(Bi$_{1-x}$Sb$_x$)$_2$Te$_4$ is a potential platform to observe the key features of the high-temperature axion insulator state, such as the topological magnetoelectric responses and half-integer quantum Hall effects.

cond-mat.mtrl-sci↗

Distinct Topological Surface States on the Two Terminations of MnBi$_4$Te$_7$

The recent discovered intrinsic magnetic topological insulator MnBi2Te4 have been met with unusual success in hosting emergent phenomena such as the quantum anomalous Hall effect and the axion insulator states. However, the surface-bulk correspondence of the Mn-Bi-Te family, composed by the superlattice-like MnBi2Te4/(Bi2Te3)n (n = 0, 1, 2, 3 ...) layered structure, remains intriguing but elusive. Here, by using scanning tunneling microscopy (STM) and angle-resolved photoemission spectroscopy (ARPES) techniques, we unambiguously assign the two distinct surface states of MnBi4Te7 (n = 1) to the quintuple-layer (QL) Bi2Te3 termination and the septuple-layer (SL) MnBi2Te4 termination, respectively. A comparison of the experimental observations with theoretical calculations reveals the diverging topological behaviors, especially the hybridization effect between magnetic and nonmagnetic layers, on the two terminations: a gap on the QL termination originating from the topological surface states of the QL hybridizing with the bands of the beneath SL, and a gapless Dirac-cone band structure on the SL termination with time-reversal symmetry. The quasi-particle interference patterns further confirm the topological nature of the surface states for both terminations, continuing far above the Fermi energy. The QL termination carries a spin-helical Dirac state with hexagonal warping, while at the SL termination, a strongly canted helical state from the surface lies between a pair of Rashba-split states from its neighboring layer. Our work elucidates an unprecedented hybridization effect between the building blocks of the topological surface states, and also reveals the termination-dependent time-reversal symmetry breaking in a magnetic topological insulator, rendering an ideal platform to realize the half-integer quantum Hall effect and relevant quantum phenomena.

cond-mat.mtrl-sci↗

$^{105}$Pd NMR and NQR study of the cubic heavy fermion system Ce$_3$Pd$_{20}$Si$_6$

We report $^{105}$Pd NMR and NQR measurements on a single crystal of Ce$_3$Pd$_{20}$Si$_6$, where antiferroquadrupolar and antiferromagnetic orders develop at low temperature. From the analysis of NQR and NMR spectra, we have determined the electric field gradient (EFG) tensors and the anisotropic Knight shift ($K$) components for both inequivalent Pd sites - Pd($32f$) and Pd($48h$). The observed EFG values are in excellent agreement with our state-of-the-art DFT calculations. The principal values of the quadrupolar coupling are $(20.37 \pm 0.02)$ MHz and $(5.45 \pm 0.02)$ MHz, for the Pd($32f$) and Pd($48h$) site, respectively, which is large compared to the Larmor frequency defined by the gyromagnetic constant $γ= 1.94838$ MHz/T for $^{105}$Pd. Therefore, the complete knowledge of $K$ and the EFG tensors is crucial to establish the correspondence between NMR spectra and crystallographic sites, which is needed for a complete analysis of the magnetic structure, static spin susceptibility, and the spin-lattice relaxation rate data and a better understanding of the groundstate of Ce$_3$Pd$_{20}$Si$_6$.

cond-mat.str-el↗

Role of a higher dimensional interaction in stabilizing charge density waves in quasi-1D NbSe$_3$ revealed by angle-resolved photoemission spectroscopy

We revisit charge density wave (CDW) behavior in the archetypal quasi-one-dimensional (quasi-1D) material NbSe$_3$ by high-resolution angle-resolved photoemission spectroscopy measurements utilizing a microfocused laser with a photon energy of 6.3 eV. We present a detailed view of the electronic structure of this complex multiband system and unambiguously resolve CDW gaps at the Fermi level ($E_F$). By employing a tight-binding model, we argue that these gaps are the result of interband coupling between electronic states that reside predominantly on distinct 1D chains within the material. Two such localized states are found to couple to an electronic state that extends across multiple 1D chains, highlighting the importance of a higher-dimensional interaction in stabilizing the CDW ordering in this material. In addition, the temperature evolution of intrachain gaps caused by the CDW periodicities far below $E_F$ deviate from the behavior expected for a Peierls-type mechanism driven by nesting; the upper and lower bands of the renormalized CDW dispersions maintain a fixed peak-to-peak distance while the gaps are gradually removed at higher temperatures. This points toward a gradual loss of long-range phase coherence as the dominant effect in reducing the CDW order parameter, which may correspond to the loss of coherence between the coupled chains. Furthermore, one of the gaps is observed above the bulk and surface CDW transition temperatures, implying the persistence of short-range incoherent CDW order. The influence of such higher-dimensional interactions likely plays an important role in a range of low-dimensional systems.

cond-mat.str-el↗

Direct Measurement of the Electronic Structure and band gap nature of atomic-layer-thick 2H-MoTe2

The millimeter sized monolayer and bilayer 2H-MoTe2 single crystal samples are prepared by a new mechanical exfoliation method. Based on such high-quality samples, we report the first direct electronic structure study on them, using standard high resolution angle-resolved photoemission spectroscopy (ARPES). A direct band gap of 0.924eV is found at K in the rubidium-doped monolayer MoTe2. Similar valence band alignment is also observed in bilayer MoTe2,supporting an assumption of a analogous direct gap semiconductor on it. Our measurements indicate a rather large band splitting of 212meV at the valence band maximum (VBM) in monolayer MoTe2, and the splitting is systematically enlarged with layer stacking, from monolayer to bilayer and to bulk. Meanwhile, our PBE band calculation on these materials show excellent agreement with ARPES results. Some fundamental electronic parameters are derived from the experimental and calculated electronic structures. Our findings lay a foundation for further application-related study on monolayer and bilayer MoTe2.

cond-mat.mtrl-sci↗

Hybridization-Induced Gapped and Gapless States on the Surfaces of Magnetic Topological Insulators

The layered MnBi2nTe3n+1 family represents the first intrinsic antiferromagnetic topological insulator (AFM TI, protected by a combination symmetry ) ever discovered, providing an ideal platform to explore novel physics such as quantum anomalous Hall effect at elevated temperature and axion electrodynamics. Recent angle-resolved photoemission spectroscopy (ARPES) experiments on this family have revealed that all terminations exhibit (nearly) gapless topological surface states (TSSs) within the AFM state, violating the definition of the AFM TI, as the surfaces being studied should be -breaking and opening a gap. Here we explain this curious paradox using a surface-bulk band hybridization picture. Combining ARPES and first-principles calculations, we prove that only an apparent gap is opened by hybridization between TSSs and bulk bands. The observed (nearly) gapless features are consistently reproduced by tight-binding simulations where TSSs are coupled to a Rashba-split bulk band. The Dirac-cone-like spectral features are actually of bulk origin, thus not sensitive to the-breaking at the AFM surfaces. This picture explains the (nearly) gapless behaviour found in both Bi2Te3- and MnBi2Te4-terminated surfaces and is applicable to all terminations of MnBi2nTe3n+1 family. Our findings highlight the role of band hybridization, superior to magnetism in this case, in shaping the general surface band structure in magnetic topological materials for the first time.

cond-mat.str-el↗

In-plane antiferromagnetic moments in axion topological insulator candidate EuIn$_2$As$_2$

Topological insulator with antiferromagnetic order can serve as an ideal platform for the realization of axion electrodynamics. In this paper, we report a systematic study of the axion topological insulator candidate EuIn$_2$As$_2$. A linear energy dispersion across the Fermi level confirms the existence of the proposed hole-type Fermi pocket. Spin-flop transitions occur with magnetic fields applied within the $ab$-plane while are absent for fields parallel to the $c$-axis. Anisotropic magnetic phase diagrams are observed and the orientation of the ground magnetic moment is found to be within the $ab$-plane. The magnetoresistivity for EuIn$_2$As$_2$ behaves non-monotonic as a function of field strength. It exhibits angular dependent evolving due to field-driven and temperature-driven magnetic states. These results indicate that the magnetic states of EuIn$_2$As$_2$ strongly affect the transport properties as well as the topological nature.

cond-mat.str-el↗

Rashba-like spin splitting along three momentum directions in trigonal layered PtBi2

Spin-orbit coupling (SOC) has gained much attention for its rich physical phenomena and highly promising applications in spintronic devices. The Rashba-type SOC in systems with inversion symmetry breaking is particularly attractive for spintronics applications since it allows for flexible manipulation of spin current by external electric fields. Here, we report the discovery of a giant anisotropic Rashba-like spin splitting along three momentum directions (3D Rashba-like spin splitting) with a helical spin polarization around the M points in the Brillouin zone of trigonal layered PtBi2. Due to its inversion asymmetry and reduced symmetry at the M point, Rashba-type as well as Dresselhaus-type SOC cooperatively yield a 3D spin splitting with alpha~ 4.36 eVA in PtBi2. The experimental realization of 3D Rashba-like spin splitting not only has fundamental interests but also paves the way to the future exploration of a new class of material with unprecedented functionalities for spintronics applications.

cond-mat.mtrl-sci↗