arXiv · 2201.00845
Magneto-Transport and High-Resolution Angle-Resolved Photoelectron Spectroscopy Studies of Palladium Doped Bi$_{2}$Te$_{3}$
Abstract
We have performed magneto-transport and high-resolution angle-resolved photoelectron spectroscopy (ARPES) measurements on palladium (Pd) doped topological insulator Pd$_{x}$Bi$_{2}$Te$_{3}$ (0 $\leq$ x $\leq$ 0.20) single crystals. We have observed unusually high values of magnetoresistance ($\sim$ 1500%) and mobility ($\sim$ 93000 cm$^{2}$V$^{-1}$s$^{-1}$) at low temperatures for pristine Bi2Te3 that decrease on Pd doping. The Shubnikov-de Haas (SdH) oscillations have been detected for x = 0.05, 0.10, confirming the presence of 2D topological surface states (TSSs) for these samples. The Hall measurement shows the crossover from n-type charge carriers in pristine Bi$_{2}$Te$_{3}$ to p-type charge carriers upon Pd doping. The ARPES measurements show that the conduction band crosses the Fermi level for pristine Bi$_{2}$Te$_{3}$, and the Dirac point of the TSSs and bulk-derived valence bands indicated shift to lower binding energy upon Pd doping in a rigid-band-like way up to x $\sim$0.10. Based on the comparison of the parameters obtained from the SdH and ARPES measurements, the reduction in the kF value in the magneto-transport measurements likely due to the band bending induced by the Schottky barrier.
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Shailja Sharma, Shiv Kumar, Girish C. Tewari, Gargee Sharma, Eike F. Schwier, Kenya Shimada, A. Taraphder, C. S. Yadav. 2022-01-03. Magneto-Transport and High-Resolution Angle-Resolved Photoelectron Spectroscopy Studies of Palladium Doped Bi$_{2}$Te$_{3}$. https://doi.org/10.1103/physrevb.105.115120
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