arXiv subjects

Elena Stellino

Publications and source records attributed to Elena Stellino.

11 recordsLinked to original sources

arXiv2026

Metallic crossover through the tilt-free transition in La$_3$Ni$_2$O$_7$ at high pressure and temperature

La$_3$Ni$_2$O$_7$, a bilayer nickelate with Ruddlesden-Popper structure, undergoes a pressure-induced structural transition from a tilted Amam phase to an untilted Fmmm (or I4/mmm) phase near 10-15 GPa, concomitant with the emergence of high-T$_c$ superconductivity ($T_c \sim 80$ K). Despite intense interest, the phase boundaries and the impact of structural changes on the electronic properties remain unclear. Here, we combine high-pressure and high-temperature Raman and synchrotron-based infrared spectroscopies to map the structural and electronic evolutions. Raman measurements confirm the pressure-driven structural transition and reveal the emergence of Fano line shapes, indicating enhanced electron-phonon coupling. High-temperature data show analogous spectral signatures above 544 K, suggesting an upper temperature limit of the Amam phase within the T-P phase diagram of this system. Infrared reflectivity measurements evidence a concomitant enhanced metallicity, with a tremendous two-order-of-magnitude increase in carrier density, marking a crossover from a weakly to highly metallic state. These results establish a unified picture of the structural transition and its strong coupling to the electronic properties.

cond-mat.supr-con↗

arXiv2026

Resonantly-enhanced Raman response in graphene-capped bismuthene on SiC

Two-dimensional quantum spin Hall insulators based on atomic monolayers offer a promising route toward dissipationless electronics, yet their practical use is often limited by environmental instability. Encapsulating the system with a graphene capping layer has been shown to be a reliable method to prevent oxidation and degradation. However, the confirmation of a successful encapsulation still relies on ultra-high vacuum techniques, that considerably slow the process. Here, we present an ex situ, rapid, nondestructive and spatially resolved Raman characterization of graphene-capped bismuthene, a honeycomb monolayer of Bi on SiC. A pronounced Raman scattering peak at around 122 cm-1 is identified as the E2g phonon of bismuthene, via a comparison with density functional perturbation theory calculations. We use excitation-energy and polarization-dependent Raman measurements to enable an unambiguous assignment of the spectral features. Tuning the excitation energy close to the excitonic transition in pristine bismuthene, we observe a strong enhancement of the Raman response and the emergence of additional scattering peaks. In this regime, higher-order phonon features, as well as interfacial modes between bismuthene and the SiC substrate, become visible, suggesting the involvement of resonant scattering processes. Our results establish Raman micro-spectroscopy as a versatile tool for probing graphene-protected quantum materials, providing access to lattice dynamics and interlayer coupling.

cond-mat.mtrl-sci↗

arXiv2025

Probing enhanced electron-phonon coupling in graphene by infrared resonance Raman spectroscopy

We report on resonance Raman spectroscopy measurements with excitation photon energy down to 1.16 eV on graphene, to study how low-energy carriers interact with lattice vibrations. Thanks to the excitation energy close to the Dirac point at $\mathbf{K}$, we unveil a giant increase of the intensity ratio between the double-resonant 2D and 2D$^\prime$ peaks with respect to that measured in graphite. Comparing with fully \textit{ab initio} theoretical calculations, we conclude that the observation is explained by an enhanced, momentum-dependent coupling between electrons and Brillouin zone-boundary optical phonons. This finding applies to two dimensional Dirac systems and has important consequences for the modeling of transport in graphene devices operating at room temperature.

cond-mat.mes-hall↗

arXiv2025

Tuning Ultra-Narrow Direct Bandgap in alpha-Sn Nanocrystals: A CMOS-Compatible Approach for THz Applications

alpha-Sn has recently been attracting significant interest due to its unique electronic properties. However, this allotrope of Sn is stable only below 13 °C and alternative options to the conventional stabilization by epitaxial growth on InSb are still a challenge. In this work, nanoparticles with inner alpha-Sn nanocrystals were synthesized on a Silicon substrate via a CMOS-compatible process through microwave irradiation. The nanoparticle morphology was characterized by Scanning Electron Microscopy and Atomic Force Microscopy, demonstrating the ability to control the nanoparticle size by a dewetting process combined with a coalescence process induced by the microwaves. Grazing Incidence X-Ray Diffraction analyses confirmed the stabilization of the alpha-Sn phase within a SnO2 shell, while X-Ray Photoemission Spectroscopy measurements revealed the presence of a bandgap. Infrared transmission spectroscopy combined with a Tauc-plot extrapolation led to an estimate of the gap in the range from 64 to 137 meV range. Furthermore, the possibility to tune the bandgap by controlling the nanoparticle size, possibly leveraging weak quantum confinement effects, was demonstrated, unveiling the potential of alpha-Sn nanoparticles on Si for the development of CMOS-compatible THz devices.

cond-mat.mtrl-sci↗

arXiv2024

Fine-Tuning of the Excitonic Response in Monolayer WS2 Domes via Coupled Pressure and Strain Variation

We present a spectroscopic investigation into the vibrational and optoelectronic properties of WS2 domes in the 0-0.65 GPa range. The pressure evolution of the system morphology, deduced by the combined analysis of Raman and photoluminescence spectra, revealed a significant variation in the dome's aspect ratio. The modification of the dome shape caused major changes in the mechanical properties of the system resulting in a sizable increase of the out-of-plane compressive strain while keeping the in-plane tensile strain unchanged. The variation of the strain gradients drives a non-linear behavior in both the exciton energy and radiative recombination intensity, interpreted as the consequence of a hybridization mechanism between the electronic states of two distinct minima in the conduction band. Our results indicate that pressure and strain can be efficiently combined in low dimensional systems with unconventional morphology to obtain modulations of the electronic band structure not achievable in planar crystals.

cond-mat.mtrl-sci↗

arXiv2024

Infrared resonance Raman of bilayer graphene: signatures of massive fermions and band structure on the 2D peak

Few-layer graphene possesses low-energy carriers which behave as massive fermions, exhibiting intriguing properties in both transport and light scattering experiments. Lowering the excitation energy of resonance Raman spectroscopy down to 1.17 eV we target these massive quasiparticles in the split bands close to the K point. The low excitation energy weakens some of the Raman processes which are resonant in the visible, and induces a clearer frequency-separation of the sub-structures of the resonance 2D peak in bi- and trilayer samples. We follow the excitation-energy dependence of the intensity of each sub-structure and, comparing experimental measurements on bilayer graphene with ab initio theoretical calculations, we trace back such modifications on the joint effects of probing the electronic dispersion close to the band splitting and enhancement of electron-phonon matrix elements.

cond-mat.mes-hall↗

arXiv2023

Experimental investigation of electronic interactions in collapsed and uncollapsed LaFe2As2 phases

The iron-based pnictide LaFe2As2 is not superconducting as-synthesized, but it becomes such below Tc around 12 K upon annealing, as a consequence of a structural transition from a phase with collapsed tetragonal crystal structure to an uncollapsed phase. In this work, we carry out specific heat, Raman spectroscopy and normal state electric and thermoelectric transport measurements in the collapsed and uncollapsed LaFe2As2 phases to gain insight into the electron interactions and their possible role in the superconducting pairing mechanism. Despite clear features of strong electron-phonon coupling observed in both phases, neither the low energy phonon spectra nor the electron-phonon coupling show significant differences between the two phases. Conversely, the Sommerfield constants are significantly different in the two phases, pointing to much higher electron correlation in the superconducting uncollapsed phase and confirming theoretical studies.

cond-mat.supr-con↗

arXiv2023

Far-Infrared Signatures for a Two-Steps Pressure-Driven Metallization in Transition Metal Dichalcogenides

We present a high-pressure investigation of the semiconductor-to-metal transition in MoS2 and WS2 carried out by synchrotron-based far-infrared spectroscopy, to reconcile the controversial estimates of the metallization pressure found in the literature and gain new insight into the mechanisms ruling this electronic transition. Two spectral descriptors are found indicative of the onset of metallicity and of the origin of the free carriers in the metallic state: the absorbance spectral weight, whose abrupt increase defines the metallization pressure threshold, and the asymmetric lineshape of the E1u peak, whose pressure evolution, interpreted within the Fano model, suggests the electrons in the metallic state originate from n-type doping levels. Combining our results with those reported in the literature, we hypothesize a two-step mechanism is at work in the metallization process, in which the pressure-induced hybridization between doping and conduction band states drives an early metallic behaviour, while the band-gap closes at higher pressures.

cond-mat.mtrl-sci↗

arXiv2022

Raman Scattering with infrared excitation resonant with MoSe$_2$ indirect band gap

Resonance Raman scattering, which probes electrons, phonons and their interplay in crystals, is extensively used in two-dimensional materials. Here we investigate Raman modes in MoSe$_2$ at different laser excitation energies from 2.33 eV down to the near infrared 1.16 eV. The Raman spectrum at 1.16 eV excitation energy shows that the intensity of high-order modes is strongly enhanced if compared to the first-order phonon modes intensity due to resonance effects with the MoSe$_2$ indirect band gap. By comparing the experimental results with the two-phonon density of states calculated with density functional theory, we show that the high-order modes originate mostly from two-phonon modes with opposite momenta. In particular, we identify the momenta of the phonon modes that couple strongly with the electrons to produce the resonance process at 1.16 eV, while we verify that at 2.33 eV the two-phonon modes lineshape compares well with the two-phonon density of state calculated over the entire Brillouin Zone. We also show that, by lowering the crystal temperature, we actively suppress the intensity of the resonant two-phonon modes and we interpret this as the result of the increase of the indirect band gap at low temperature that moves our excitation energy out of the resonance condition.

cond-mat.mtrl-sci↗

arXiv2021

Broadband Infrared Study of Pressure-Tunable Fano Resonance and Metallization Transition in 2H-MoTe2

High pressure is a proven effective tool for modulating inter-layer interactions in semiconducting transition metal dichalcogenides, which leads to significant band structure changes. Here, we present an extended infrared study of the pressure-induced semiconductor-to-metal transition in 2H-MoTe2, which reveals that the metallization process at 13-15 GPa is not associated with the indirect band gap closure, occuring at 24 GPa. A coherent picture is drawn where n-type doping levels just below the conduction band minimum play a crucial role in the early metallization transition. Doping levels are also responsible for the asymmetric Fano line-shape of the E1u infrared-active mode, which has been here detected and analyzed for the first time in a Transition Metal Dichalcogenide compound. The pressure evolution of the phonon profile under pressure shows a symmetrization in the 13-15 GPa pressure range, which occurs simultaneously with the metallization and confirms the scenario proposed for the high pressure behaviour of 2H-MoTe2.

cond-mat.mtrl-sci↗

arXiv2021

Infrared study of the pressure-induced isostructural metallic transition in Mo$_{0:5}$W$_{0:5}$S$_{2}$

Ternary compounds of Transition Metal Dichalcogenides are emerging as an interesting class of crystals with tunable electronic properties, which make them attractive for nano-electronic and optoelectronic applications. Among them, Mo$_x$W$_{1-x}$S$_2$ is one of the most studied alloys, due to the well-known, remarkable features of its binary constituents, MoS$_2$ and WS$_2$. The band-gap of this compound can be modelled varying Mo and W percentages in the sample, and its vibrational modes result from a combination of MoS$_2$ and WS$_2$ phonons. In this work, we report transmission measurements on a Mo$_{0:5}$W$_{0:5}$S$_2$ single crystal in the far-infrared range. Absorbance spectra collected at ambient conditions enabled, for the first time, a classification of the infrared-active phonons, complementary to Raman studies. High-pressure measurements allowed to study the evolution of both the lattice dynamics and the free carrier density up to 31 GPa, indicating the occurrence of an isostructural semiconductor-to-metal transition above 18 GPa.

cond-mat.mtrl-sci↗