arXiv · 2505.21440
Tuning Ultra-Narrow Direct Bandgap in alpha-Sn Nanocrystals: A CMOS-Compatible Approach for THz Applications
Abstract
alpha-Sn has recently been attracting significant interest due to its unique electronic properties. However, this allotrope of Sn is stable only below 13 {\deg}C and alternative options to the conventional stabilization by epitaxial growth on InSb are still a challenge. In this work, nanoparticles with inner alpha-Sn nanocrystals were synthesized on a Silicon substrate via a CMOS-compatible process through microwave irradiation. The nanoparticle morphology was characterized by Scanning Electron Microscopy and Atomic Force Microscopy, demonstrating the ability to control the nanoparticle size by a dewetting process combined with a coalescence process induced by the microwaves. Grazing Incidence X-Ray Diffraction analyses confirmed the stabilization of the alpha-Sn phase within a SnO2 shell, while X-Ray Photoemission Spectroscopy measurements revealed the presence of a bandgap. Infrared transmission spectroscopy combined with a Tauc-plot extrapolation led to an estimate of the gap in the range from 64 to 137 meV range. Furthermore, the possibility to tune the bandgap by controlling the nanoparticle size, possibly leveraging weak quantum confinement effects, was demonstrated, unveiling the potential of alpha-Sn nanoparticles on Si for the development of CMOS-compatible THz devices.
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Tiziano Bertoli, Elena Stellino, Francesco Minati, Camilla Belloni, Giovanni Tomassucci, Emanuele Bosco, Silvano Battisti, Leonardo Puppulin, Demetrio Logoteta, Alessandro Nucara, Luisa Barba, Gaetano Campi, Naurang Lal Saini, Fabrizio Palma, Michele Back, Pietro Riello, Fernanda Irrera. 2025-05-27. Tuning Ultra-Narrow Direct Bandgap in alpha-Sn Nanocrystals: A CMOS-Compatible Approach for THz Applications. https://arxiv.org/abs/2505.21440
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