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Elisa Vianello

Publications and source records attributed to Elisa Vianello.

At least 19 recordsLinked to original sources

Uncertainty-triggered wake-up enables energy-efficient, error-resilient edge AI with memristor front ends

Memristor computing offers a route to low-energy edge AI, but device variability, sensitivity to operating conditions, and system-integration challenges can hinder deployment. Here we show that these limitations can be mitigated by using memristor AI not as the final decision maker but as the ultra-low-power, always-on front end of a heterogeneous inference system. We implement this architecture by coupling a fabricated memristor Bayesian machine to a programmable CPU running a higher-power, higher-accuracy software neural network. The memristor front end acts as a probabilistic screener. When it predicts an abnormal event or produces an ambiguous or invalid output, a dedicated hardware wake-up path activates the CPU, which produces the final decision. We validate this architecture on a heartbeat-classification benchmark by interfacing the fabricated Bayesian machine with an FPGA-based wake-up platform and CPU back end. The resulting uncertainty-triggered wake-up system achieves high final classification accuracy under nominal operation and maintains this accuracy even when the memristor front end is degraded by voltage scaling or reduced programming margins, because unreliable outputs are converted into recoverable wake-up events instead of becoming silent errors. Post-layout analysis of an ASIC implementation shows that average energy is governed primarily by wake-up frequency, providing practical design rules for choosing front-end operating points. These results establish uncertainty-triggered wake-up as a strategy for energy-efficient, error-resilient edge AI.

cs.ET

Forward-only learning in memristor arrays with month-scale stability

Turning memristor arrays from efficient inference engines into systems capable of on-chip learning has proved difficult. Weight updates have a high energy cost and cause device wear, analog states drift, and backpropagation requires a backward pass with reversed signal flow. Here we experimentally demonstrate learning on standard filamentary HfOx/Ti arrays that addresses these challenges with two design choices. First, we rely on forward-only training algorithms in the Forward-Forward family that use only inference-style operations. Second, we use sub-1 V reset-only, single-pulse updates that cut energy and yield stable analog states. We first validate fully in-hardware single-layer learning, where both analog MAC operations and sub-1 V programming updates are performed on chip. We then train two-layer classifiers on an ImageNet-resolution four-class task using a hardware-in-the-loop protocol on arrays up to 8,064 devices: all conductance reads and programming updates are physical, and multilayer MACs are emulated in software from the measured conductances. Two forward-only variants, two-pass supervised Forward-Forward and a single-pass competitive rule, achieve test accuracies of 89.5% and 89.6%, respectively; a reference experiment using backpropagation reaches 90.0%. Across five independent runs per method, these accuracies are indistinguishable within statistical uncertainty. Trained models retain accuracy for at least one month under ambient conditions and remain stable under an aggressive 25 h read-disturb protocol, whereas a matched set-based Write&Verify baseline loses nearly three percentage points of test accuracy. At the array level, sub-1 V reset updates use 460 times less energy than conventional program-and-verify programming and require just 46% more energy than inference-only operation.

cs.ET

Unified Memcapacitor-Memristor Memory for Synaptic Weights and Neuron Temporal Dynamics

We present a fabricated and experimentally characterized memory stack that unifies memristive and memcapacitive behavior. Exploiting this dual functionality, we design a circuit enabling simultaneous control of spatial and temporal dynamics in recurrent spiking neural networks (RSNNs). Hardware-aware simulations highlight its promise for efficient neuromorphic processing.

cs.ET

A Fully Digital Relaxation-Aware Analog Programming Technique for HfOx RRAM Arrays

For neuromorphic engineering to emulate the human brain, improving memory density with low power consumption is an indispensable but challenging goal. In this regard, emerging RRAMs have attracted considerable interest for their unique qualities like low power consumption, high integration potential, durability, and CMOS compatibility. Using RRAMs to imitate the more analog storage behavior of brain synapses is also a promising strategy for further improving memory density and power efficiency. However, RRAM devices display strong stochastic behavior, together with relaxation effects, making it more challenging to precisely control their multi-level storage capability. To address this, researchers have reported different multi-level programming strategies, mostly involving the precise control of analog parameters like compliance current during write operations and/or programming voltage amplitudes. Here, we present a new fully digital relaxation-aware method for tuning the conductance of analog RRAMs. The method is based on modulating digital pulse widths during erase operations while keeping other parameters fixed, and therefore requires no precise alterations to analog parameters like compliance currents or programming voltage amplitudes. Experimental results, with and without relaxation effect awareness, on a 64 RRAM 1T1R HfOx memory array of cells, fabricated in 130nm CMOS technology, indicate that it is possible to obtain 2-bit memory per cell multi-value storage at the array level, verified 1000 seconds after programming.

cs.ET

Intrinsic Annealing in a Hybrid Memristor-Magnetic Tunnel Junction Ising Machine

Hardware implementations of the Ising model offer promising solutions to large-scale optimization tasks. In the literature, various nanodevices have been shown to emulate the spin dynamics for such Ising machines with remarkable effectiveness. Other nanodevices have been shown to implement spin-spin coupling with compact footprint and minimal energy dissipation. However, an ideal Ising machine would associate both types of nanodevices, and they must operate synergistically to support annealing: a progressive reduction of machine stochasticity that allows it to settle to energy minimum. Here, we report an Ising machine that combines two nanotechnologies: memristor crossbar -- storing multi-level couplings -- and stochastic magnetic tunnel junction (SMTJ), acting as thermally driven spins. Because the same read voltage that interrogates the crossbar also biases the SMTJs, increasing this voltage automatically lowers the effective temperature of the machine, providing an intrinsic, nearly circuit-free annealing technique. Operating at zero magnetic field, our prototype consistently reaches the global optimum of a 24-vertex weighted MAX-CUT and a 10-vertex, three-color graph-coloring problem. Given that both nanotechnologies in our demonstrator are CMOS-integrated, this approach is compatible with advanced 3D integration, offering a scalable pathway toward compact, fast, and energy-efficient large-scale Ising solvers.

cs.ET

Bayesian continual learning and forgetting in neural networks

Biological synapses effortlessly balance memory retention and flexibility, yet artificial neural networks still struggle with the extremes of catastrophic forgetting and catastrophic remembering. Here, we introduce Metaplasticity from Synaptic Uncertainty (MESU), a Bayesian framework that updates network parameters according their uncertainty. This approach allows a principled combination of learning and forgetting that ensures that critical knowledge is preserved while unused or outdated information is gradually released. Unlike standard Bayesian approaches -- which risk becoming overly constrained, and popular continual-learning methods that rely on explicit task boundaries, MESU seamlessly adapts to streaming data. It further provides reliable epistemic uncertainty estimates, allowing out-of-distribution detection, the only computational cost being to sample the weights multiple times to provide proper output statistics. Experiments on image-classification benchmarks demonstrate that MESU mitigates catastrophic forgetting, while maintaining plasticity for new tasks. When training 200 sequential permuted MNIST tasks, MESU outperforms established continual learning techniques in terms of accuracy, capability to learn additional tasks, and out-of-distribution data detection. Additionally, due to its non-reliance on task boundaries, MESU outperforms conventional learning techniques on the incremental training of CIFAR-100 tasks consistently in a wide range of scenarios. Our results unify ideas from metaplasticity, Bayesian inference, and Hessian-based regularization, offering a biologically-inspired pathway to robust, perpetual learning.

cs.LG

Roadmap to Neuromorphic Computing with Emerging Technologies

The roadmap is organized into several thematic sections, outlining current computing challenges, discussing the neuromorphic computing approach, analyzing mature and currently utilized technologies, providing an overview of emerging technologies, addressing material challenges, exploring novel computing concepts, and finally examining the maturity level of emerging technologies while determining the next essential steps for their advancement.

eess.SP

The Logarithmic Memristor-Based Bayesian Machine

The demand for explainable and energy-efficient artificial intelligence (AI) systems for edge computing has led to significant interest in electronic systems dedicated to Bayesian inference. Traditional designs of such systems often rely on stochastic computing, which offers high energy efficiency but suffers from latency issues and struggles with low-probability values. In this paper, we introduce the logarithmic memristor-based Bayesian machine, an innovative design that leverages the unique properties of memristors and logarithmic computing as an alternative to stochastic computing. We present a prototype machine fabricated in a hybrid CMOS/hafnium-oxide memristor process. We validate the versatility and robustness of our system through experimental validation and extensive simulations in two distinct applications: gesture recognition and sleep stage classification. The logarithmic approach simplifies the computational model by converting multiplications into additions and enhances the handling of low-probability events, which are crucial in time-dependent tasks. Our results demonstrate that the logarithmic Bayesian machine achieves superior performance in terms of accuracy and energy efficiency compared to its stochastic counterpart, particularly in scenarios involving complex probabilistic models. This work paves the way for the deployment of advanced AI capabilities in edge devices, where power efficiency and reliability are paramount.

cs.ET

Bayesian Metaplasticity from Synaptic Uncertainty

Catastrophic forgetting remains a challenge for neural networks, especially in lifelong learning scenarios. In this study, we introduce MEtaplasticity from Synaptic Uncertainty (MESU), inspired by metaplasticity and Bayesian inference principles. MESU harnesses synaptic uncertainty to retain information over time, with its update rule closely approximating the diagonal Newton's method for synaptic updates. Through continual learning experiments on permuted MNIST tasks, we demonstrate MESU's remarkable capability to maintain learning performance across 100 tasks without the need of explicit task boundaries.

cs.LG

Dendritic Computation through Exploiting Resistive Memory as both Delays and Weights

Biological neurons can detect complex spatio-temporal features in spiking patterns via their synapses spread across across their dendritic branches. This is achieved by modulating the efficacy of the individual synapses, and by exploiting the temporal delays of their response to input spikes, depending on their position on the dendrite. Inspired by this mechanism, we propose a neuromorphic hardware architecture equipped with multiscale dendrites, each of which has synapses with tunable weight and delay elements. Weights and delays are both implemented using Resistive Random Access Memory (RRAM). We exploit the variability in the high resistance state of RRAM to implement a distribution of delays in the millisecond range for enabling spatio-temporal detection of sensory signals. We demonstrate the validity of the approach followed with a RRAM-aware simulation of a heartbeat anomaly detection task. In particular we show that, by incorporating delays directly into the network, the network's power and memory footprint can be reduced by up to 100x compared to equivalent state-of-the-art spiking recurrent networks with no delays.

cs.ET

DenRAM: Neuromorphic Dendritic Architecture with RRAM for Efficient Temporal Processing with Delays

An increasing number of neuroscience studies are highlighting the importance of spatial dendritic branching in pyramidal neurons in the brain for supporting non-linear computation through localized synaptic integration. In particular, dendritic branches play a key role in temporal signal processing and feature detection, using coincidence detection (CD) mechanisms, made possible by the presence of synaptic delays that align temporally disparate inputs for effective integration. Computational studies on spiking neural networks further highlight the significance of delays for CD operations, enabling spatio-temporal pattern recognition within feed-forward neural networks without the need for recurrent architectures. In this work, we present DenRAM, the first realization of a spiking neural network with analog dendritic circuits, integrated into a 130nm technology node coupled with resistive memory (RRAM) technology. DenRAM's dendritic circuits use the RRAM devices to implement both delays and synaptic weights in the network. By configuring the RRAM devices to reproduce bio-realistic timescales, and through exploiting their heterogeneity, we experimentally demonstrate DenRAM's capability to replicate synaptic delay profiles, and efficiently implement CD for spatio-temporal pattern recognition. To validate the architecture, we conduct comprehensive system-level simulations on two representative temporal benchmarks, highlighting DenRAM's resilience to analog hardware noise, and its superior accuracy compared to recurrent architectures with an equivalent number of parameters. DenRAM not only brings rich temporal processing capabilities to neuromorphic architectures, but also reduces the memory footprint of edge devices, provides high accuracy on temporal benchmarks, and represents a significant step-forward in low-power real-time signal processing technologies.

cs.ET

Synaptic metaplasticity with multi-level memristive devices

Deep learning has made remarkable progress in various tasks, surpassing human performance in some cases. However, one drawback of neural networks is catastrophic forgetting, where a network trained on one task forgets the solution when learning a new one. To address this issue, recent works have proposed solutions based on Binarized Neural Networks (BNNs) incorporating metaplasticity. In this work, we extend this solution to quantized neural networks (QNNs) and present a memristor-based hardware solution for implementing metaplasticity during both inference and training. We propose a hardware architecture that integrates quantized weights in memristor devices programmed in an analog multi-level fashion with a digital processing unit for high-precision metaplastic storage. We validated our approach using a combined software framework and memristor based crossbar array for in-memory computing fabricated in 130 nm CMOS technology. Our experimental results show that a two-layer perceptron achieves 97% and 86% accuracy on consecutive training of MNIST and Fashion-MNIST, equal to software baseline. This result demonstrates immunity to catastrophic forgetting and the resilience to analog device imperfections of the proposed solution. Moreover, our architecture is compatible with the memristor limited endurance and has a 15x reduction in memory

cs.NE

Powering AI at the Edge: A Robust, Memristor-based Binarized Neural Network with Near-Memory Computing and Miniaturized Solar Cell

Memristor-based neural networks provide an exceptional energy-efficient platform for artificial intelligence (AI), presenting the possibility of self-powered operation when paired with energy harvesters. However, most memristor-based networks rely on analog in-memory computing, necessitating a stable and precise power supply, which is incompatible with the inherently unstable and unreliable energy harvesters. In this work, we fabricated a robust binarized neural network comprising 32,768 memristors, powered by a miniature wide-bandgap solar cell optimized for edge applications. Our circuit employs a resilient digital near-memory computing approach, featuring complementarily programmed memristors and logic-in-sense-amplifier. This design eliminates the need for compensation or calibration, operating effectively under diverse conditions. Under high illumination, the circuit achieves inference performance comparable to that of a lab bench power supply. In low illumination scenarios, it remains functional with slightly reduced accuracy, seamlessly transitioning to an approximate computing mode. Through image classification neural network simulations, we demonstrate that misclassified images under low illumination are primarily difficult-to-classify cases. Our approach lays the groundwork for self-powered AI and the creation of intelligent sensors for various applications in health, safety, and environment monitoring.

cs.ET

A Multimode Hybrid Memristor-CMOS Prototyping Platform Supporting Digital and Analog Projects

We present an integrated circuit fabricated in a process co-integrating CMOS and hafnium-oxide memristor technology, which provides a prototyping platform for projects involving memristors. Our circuit includes the periphery circuitry for using memristors within digital circuits, as well as an analog mode with direct access to memristors. The platform allows optimizing the conditions for reading and writing memristors, as well as developing and testing innovative memristor-based neuromorphic concepts.

cs.ET

2022 Roadmap on Neuromorphic Computing and Engineering

Modern computation based on the von Neumann architecture is today a mature cutting-edge science. In the Von Neumann architecture, processing and memory units are implemented as separate blocks interchanging data intensively and continuously. This data transfer is responsible for a large part of the power consumption. The next generation computer technology is expected to solve problems at the exascale with 1018 calculations each second. Even though these future computers will be incredibly powerful, if they are based on von Neumann type architectures, they will consume between 20 and 30 megawatts of power and will not have intrinsic physically built-in capabilities to learn or deal with complex data as our brain does. These needs can be addressed by neuromorphic computing systems which are inspired by the biological concepts of the human brain. This new generation of computers has the potential to be used for the storage and processing of large amounts of digital information with much lower power consumption than conventional processors. Among their potential future applications, an important niche is moving the control from data centers to edge devices. The aim of this Roadmap is to present a snapshot of the present state of neuromorphic technology and provide an opinion on the challenges and opportunities that the future holds in the major areas of neuromorphic technology, namely materials, devices, neuromorphic circuits, neuromorphic algorithms, applications, and ethics. The Roadmap is a collection of perspectives where leading researchers in the neuromorphic community provide their own view about the current state and the future challenges. We hope that this Roadmap will be a useful resource to readers outside this field, for those who are just entering the field, and for those who are well established in the neuromorphic community. https://doi.org/10.1088/2634-4386/ac4a83

cs.ET

A Memristor-Based Bayesian Machine

In recent years, a considerable research effort has shown the energy benefits of implementing neural networks with memristors or other emerging memory technologies. However, for extreme-edge applications with high uncertainty, access to reduced amounts of data, and where explainable decisions are required, neural networks may not provide an acceptable form of intelligence. Bayesian reasoning can solve these concerns, but it is computationally expensive and, unlike neural networks, does not translate naturally to memristor-based architectures. In this work, we introduce, demonstrate experimentally on a fully fabricated hybrid CMOS-memristor system, and analyze a Bayesian machine designed for highly-energy efficient Bayesian reasoning. The architecture of the machine is obtained by writing Bayes' law in a way making its implementation natural by the principles of distributed memory and stochastic computing, allowing the circuit to function using solely local memory and minimal data movement. Measurements on a fabricated small-scale Bayesian machine featuring 2,048 memristors and 30,080 transistors show the viability of this approach and the possibility of overcoming the challenges associated with its design: the inherent imperfections of memristors, as well as the need to distribute very locally higher-than-nominal supply voltages. The design of a scaled-up version of the machine shows its outstanding energy efficiency on a real-life gesture recognition task: a gesture can be recognized using 5,000 times less energy than using a microcontroller unit. The Bayesian machine also features several desirable features, e.g., instant on/off operation, compatibility with low supply voltages, and resilience to single-event upsets. These results open the road for Bayesian reasoning as an attractive way for energy-efficient, robust, and explainable intelligence at the edge.

cs.ET

Model of the Weak Reset Process in HfOx Resistive Memory for Deep Learning Frameworks

The implementation of current deep learning training algorithms is power-hungry, owing to data transfer between memory and logic units. Oxide-based RRAMs are outstanding candidates to implement in-memory computing, which is less power-intensive. Their weak RESET regime, is particularly attractive for learning, as it allows tuning the resistance of the devices with remarkable endurance. However, the resistive change behavior in this regime suffers many fluctuations and is particularly challenging to model, especially in a way compatible with tools used for simulating deep learning. In this work, we present a model of the weak RESET process in hafnium oxide RRAM and integrate this model within the PyTorch deep learning framework. Validated on experiments on a hybrid CMOS/RRAM technology, our model reproduces both the noisy progressive behavior and the device-to-device (D2D) variability. We use this tool to train Binarized Neural Networks for the MNIST handwritten digit recognition task and the CIFAR-10 object classification task. We simulate our model with and without various aspects of device imperfections to understand their impact on the training process and identify that the D2D variability is the most detrimental aspect. The framework can be used in the same manner for other types of memories to identify the device imperfections that cause the most degradation, which can, in turn, be used to optimize the devices to reduce the impact of these imperfections.

cs.LG

Experimental Body-input Three-stage DC offset Calibration Scheme for Memristive Crossbar

Reading several ReRAMs simultaneously in a neuromorphic circuit increases power consumption and limits scalability. Applying small inference read pulses is a vain attempt when offset voltages of the read-out circuit are decisively more. This paper presents an experimental validation of a three-stage calibration scheme to calibrate the DC offset voltage across the rows of the memristive crossbar. The proposed method is based on biasing the body terminal of one of the differential pair MOSFETs of the buffer through a series of cascaded resistor banks arranged in three stages: coarse, fine and finer stages. The circuit is designed in a 130 nm CMOS technology, where the OxRAM-based binary memristors are built on top of it. A dedicated PCB and other auxiliary boards have been designed for testing the chip. Experimental results validate the presented approach, which is only limited by mismatch and electrical noise.

cs.ET