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Emma Schmidgall

Publications and source records attributed to Emma Schmidgall.

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Response to recent comments on Phys. Rev. B 107, 245423 (2023) and Subsection S4.3 of the Supp. Info. for Nature 638, 651-655 (2025)

The topological gap protocol (TGP) is a statistical test designed to identify a topological phase with high confidence and without human bias. It is used to determine a promising parameter regime for operating topological qubits. The protocol's key metric is the probability of incorrectly identifying a trivial region as topological, referred to as the false discovery rate (FDR). Two recent manuscripts [arXiv:2502.19560, arXiv:2503.08944] engage with the topological gap protocol and its use in Phys. Rev. B 107, 245423 (2023) and Subsection S4.3 of the Supplementary Information for Nature 638, 651-655 (2025), although they do not explicitly dispute the main results of either one. We demonstrate that the objections in arXiv:2502.19560 and arXiv:2503.08944 are unfounded, and we uphold the conclusions of Phys. Rev. B 107, 245423 (2023) and Nature 638, 651-655 (2025). Specifically, we show that no flaws have been identified in our estimate of the false discovery rate (FDR). We provide a point-by-point rebuttal of the comments in arXiv:2502.19560 and arXiv:2503.08944.

cond-mat.mes-hall

Van der Waals Engineering of Ferromagnetic Semiconductor Heterostructures for Spin and Valleytronics

The integration of magnetic material with semiconductors has been fertile ground for fundamental science as well as of great practical interest toward the seamless integration of information processing and storage. Here we create van der Waals heterostructures formed by an ultrathin ferromagnetic semiconductor CrI3 and a monolayer of WSe2. We observe unprecedented control of the spin and valley pseudospin in WSe2, where we detect a large magnetic exchange field of nearly 13 T and rapid switching of the WSe2 valley splitting and polarization via flipping of the CrI3 magnetization. The WSe2 photoluminescence intensity strongly depends on the relative alignment between photo-excited spins in WSe2 and the CrI3 magnetization, due to ultrafast spin-dependent charge hopping across the heterostructure interface. The photoluminescence detection of valley pseudospin provides a simple and sensitive method to probe the intriguing domain dynamics in the ultrathin magnet, as well as the rich spin interactions within the heterostructure.

cond-mat.mes-hall

Layer-dependent Ferromagnetism in a van der Waals Crystal down to the Monolayer Limit

Since the celebrated discovery of graphene, the family of two-dimensional (2D) materials has grown to encompass a broad range of electronic properties. Recent additions include spin-valley coupled semiconductors, Ising superconductors that can be tuned into a quantum metal, possible Mott insulators with tunable charge-density waves, and topological semi-metals with edge transport. Despite this progress, there is still no 2D crystal with intrinsic magnetism, which would be useful for many technologies such as sensing, information, and data storage. Theoretically, magnetic order is prohibited in the 2D isotropic Heisenberg model at finite temperatures by the Mermin-Wagner theorem. However, magnetic anisotropy removes this restriction and enables, for instance, the occurrence of 2D Ising ferromagnetism. Here, we use magneto-optical Kerr effect (MOKE) microscopy to demonstrate that monolayer chromium triiodide (CrI3) is an Ising ferromagnet with out-of-plane spin orientation. Its Curie temperature of 45 K is only slightly lower than the 61 K of the bulk crystal, consistent with a weak interlayer coupling. Moreover, our studies suggest a layer-dependent magnetic phase transition, showcasing the hallmark thickness-dependent physical properties typical of van der Waals crystals. Remarkably, bilayer CrI3 displays suppressed magnetization with a metamagnetic effect, while in trilayer the interlayer ferromagnetism observed in the bulk crystal is restored. Our work creates opportunities for studying magnetism by harnessing the unique features of atomically-thin materials, such as electrical control for realizing magnetoelectronics, and van der Waals engineering for novel interface phenomena.

cond-mat.mes-hall