arXiv subjects

Emma Van Meirvenne

Publications and source records attributed to Emma Van Meirvenne.

4 recordsLinked to original sources

arXiv2026

Composite based magnetoelectric scaled devices with large output voltages

In this work, we investigate the differential voltage generation arising from the direct magnetoelectric (ME) effect in nanoscale composite devices upon magnetization rotation from the magnetic ground state to an out-of-plane (OOP) configuration. These composite devices comprise a magnetostrictive ferromagnetic layer and a piezoelectric layer, mechanically coupled through strain. Using a finite element method (FEM) model, developed in COMSOL Multiphysics, we provide a comprehensive analysis of strain transfer mechanisms and resulting voltage generations. Here, the influence of dimensional and material parameters on the device performance is systematically examined. Our results indicate the presence of two distinct strain transfer mechanisms at scaled dimensions, where the device aspect ratio and the magnetic state both determine the dominant mechanism influencing the strain transfer to the piezoelectric layer. Moreover, we observed that the influence of surface clamping diminished as the pillar area was reduced. We also saw that the strain transfer to the piezoelectric layer can be enhanced by using stiffer electrodes or clamping layers. Lastly, we concluded that magnetostrictive materials with large magnetoelastic coupling constants or large Poisson ratios may strongly increase the output voltage at small dimensions. This study provides insight in the dimension and material selection when designing scaled ME pillars, with the aim of generating large output voltages. We showed that output voltages exceeding 200 mV can be achieved in scaled devices, underscoring the potential of these structures for integration into microelectronic applications.

cond-mat.mes-hall↗

arXiv2025

Nonlinear Strain-Mediated Magnetoelectric Coupling in Sub-Microscale Ni/BPZT Thin-Film Devices

Strain-mediated magnetoelectric (ME) heterostructures enable electric-field control of magnetism and are promising for ultra-low-power spintronic logic. Yet achieving spatially selective, low-voltage control in thin films and quantifying ME coupling across the full ferroelastic loop remains challenging. Here, we investigate sub-micrometer Ni/BPZT thin-film devices with laterally patterned gates that localize in-plane strain beneath the Ni stripe and modulate its magnetization. We use anisotropic magnetoresistance to measure magnetization changes across the ferroelastic loop under different magnetic bias fields. Combined with Multiphysics strain simulations and micromagnetic modeling, this provides a quantitative framework that captures the convolution of ferroelastic and magnetoelastic nonlinearities and provides critical insight for device design, while enabling multi-state, bias-field-free magnetization control for non-conventional computing. The extracted coupling coefficient in linear range is 1.3 mT/V across a 700 nm gap, with a clear pathway to improving voltage efficiency through device scaling, establishing a scalable CMOS-compatible platform for energy-efficient spintronic devices.

physics.app-ph↗

arXiv2025

Charge accumulation by Direct Magnetoelectric Effect in ScAlN/Ni Nanoscale Devices

This work investigates the direct magnetoelectric effect in thin-film lab scale composite heterostructures comprising a 100 nm thick piezoelectric Sc0.4Al0.6N (ScAlN) and a magnetostrictive Ni with 100-200 nm thickness, fabricated on Si/SiO2 substrates. The films are patterned into square pillar arrays with lateral dimensions down to 500 nm x 500 nm. Vibrating sample magnetometry (VSM) measurements reveal in-plane magnetic anisotropy in the Ni films, attributed to strain induced by the underlying ScAlN layer. Nitrogen-vacancy (NV) magnetometry imaging confirms the formation of magnetic domains at remanence in polycrystalline Ni when patterned in sub-microscale structures. Capacitance measurements reveal a ScAlN dielectric constant at the device level consistent with unpatterned thin films, confirming the preservation of electrical integrity at the sub-microscale. The direct magnetoelectric effect is demonstrated through quasi-static charge measurements under applied out-of-plane DC magnetic fields, yielding equivalent open-circuit voltages up to 1.17 mV.

physics.app-ph↗

arXiv2025

Power Transfer in Magnetoelectric Resonators: a Combined Analytical and Finite Element Study

We present an analytical model for power transfer in a magnetoelectric film bulk acoustic resonator (FBAR) comprising a piezoelectric-magnetostrictive bilayer. The model describes the power flow between the elastic and magnetic systems, quantifying the transduction efficiency when the FBAR operates as a magnetic transducer. By applying the model to example systems using piezoelectric ScAlN and magnetostrictive CoFeB, Ni, or Terfenol-D layers, we demonstrate the potential for achieving high efficiencies in magnetoelectric transducers, rendering them ideal for efficient ferromagnetic resonance excitation. The validity of the model's assumptions is confirmed through comparison with a numerical finite element resonator model in COMSOL\texttrademark. The finite element model further enables a comprehensive study of the resonator's dynamic behavior, including transient and steady-state regimes, and the identification of resonant frequencies within the system.

cond-mat.mes-hall↗