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En-Ke Liu

Publications and source records attributed to En-Ke Liu.

3 recordsLinked to original sources

Exchange bias-like behavior due to hidden local magnetic state in a Weyl semimetal

Magnetic Weyl semimetals, which couple magnetic order with topological features, have emerged as promising candidates for advanced topological-materials-based applications. The switching of magnetization and the driving of domain wall motion play key roles in developing such applications. In this study, we suggest that a type of hard-magnetic nuclei dominates the magnetic reversal and induces an exchange bias-like behavior with a prior magnetic history in the bulk Co3Sn2S2 Weyl semimetal. The sign change of the exchange bias-like behavior can be realized by controlling the orientation of such hard-magnetic nuclei. Remarkably, these nuclei can retain their magnetic orientation at a temperature well above the Curie temperature of this material, suggesting the existence of a local magnetic state with non-zero magnetization and high stability. This local state is potentially related to the spin-orbit polaron reported in this system. Our study offers a new scenario for manipulating the magnetic reversal and offers new insights into the magnetism in this Weyl system.

cond-mat.mtrl-sci

Non-volatile memory based on PZT/FeGa thin film memtranstor

The PZT/FeGa thin film memtranstor was prepared and the modulation of the magnetoelectric coefficient by external magnetic and electric fields was studied. The magnetoelectric coefficient of the PZT/FeGa memtranstor can be reversed by flipping the direction of magnetization of FeGa or ferroelectric polarization of PZT. Notably, the sign of the magnetoelectric coefficient can be switched repeatedly by reversing ferroelectric polarization of PZT when the external magnetic field remains constant. Moreover, the binary switching behavior can still be maintained under zero DC bias magnetic field. When the polarization direction remains stable, the magnetoelectric coefficient also does not change. This means that the magnetoelectric coefficient of PZT/FeGa is non-volatile. Furthermore, the retention and endurance characteristics of the PZT/FeGa thin film memtranstor have been investigated. These findings demonstrate the potential of the PZT/FeGa thin film memtranstor for non-volatile memory applications.

physics.app-ph

Unprecedentedly Wide Curie-Temperature Windows as Phase-Transition Design Platform for Tunable Magneto-Multifunctional Materials

A series of unprecedentedly wide Curie-temperature windows (CTWs) between 40 and 450 K are realized by employing the isostructural alloying principle for the strongly coupled magnetostructural phase transitions in a single host system. The CTWs provide a design platform for magneto-multifunctional multiferroic alloys that can be manipulated in a quite large temperature space in various scales and patterns, as well as by multiple physical fields.

cond-mat.mtrl-sci